WO2011002800A3 - Methods and arrangements for in-situ process monitoring and control for plasma processing tools - Google Patents

Methods and arrangements for in-situ process monitoring and control for plasma processing tools Download PDF

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Publication number
WO2011002800A3
WO2011002800A3 PCT/US2010/040456 US2010040456W WO2011002800A3 WO 2011002800 A3 WO2011002800 A3 WO 2011002800A3 US 2010040456 W US2010040456 W US 2010040456W WO 2011002800 A3 WO2011002800 A3 WO 2011002800A3
Authority
WO
WIPO (PCT)
Prior art keywords
sensor data
arrangement
control
arrangements
methods
Prior art date
Application number
PCT/US2010/040456
Other languages
French (fr)
Other versions
WO2011002800A2 (en
Inventor
Vijayakumar C. Venugopal
Neil Martin Paul Benjamin
Original Assignee
Lam Research Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/555,674 external-priority patent/US8983631B2/en
Application filed by Lam Research Corporation filed Critical Lam Research Corporation
Priority to KR1020117031574A priority Critical patent/KR101741272B1/en
Priority to CN201080029444.8A priority patent/CN102473631B/en
Priority to SG2011085107A priority patent/SG176147A1/en
Priority to JP2012518582A priority patent/JP5624618B2/en
Publication of WO2011002800A2 publication Critical patent/WO2011002800A2/en
Publication of WO2011002800A3 publication Critical patent/WO2011002800A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Abstract

An arrangement for implementing an automatic in-situ process control scheme during execution of a recipe is provided. The arrangement includes control-loop sensors configured at least for collecting a first set of sensor data to facilitate monitoring set points during the recipe execution, wherein the control-loop sensors being part of a process control loop. The arrangement also includes independent sensors configured at least for collecting a second set of sensor data, which is not part of the process control loop. The arrangement yet also includes a hub configured for at least receiving at least one of the first set of sensor data and the second set of sensor data. The arrangement yet further includes an analysis computer communicably coupled with the hub and configured for performing analysis of at least one of the first set of sensor data and the second set of sensor data.
PCT/US2010/040456 2009-06-30 2010-06-29 Methods and arrangements for in-situ process monitoring and control for plasma processing tools WO2011002800A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020117031574A KR101741272B1 (en) 2009-06-30 2010-06-29 Methods and arrangements for in-situ process monitoring and control for plasma processing tools
CN201080029444.8A CN102473631B (en) 2009-06-30 2010-06-29 Methods and arrangements for in-situ process monitoring and control for plasma processing tools
SG2011085107A SG176147A1 (en) 2009-06-30 2010-06-29 Methods and arrangements for in-situ process monitoring and control for plasma processing tools
JP2012518582A JP5624618B2 (en) 2009-06-30 2010-06-29 Method and configuration for in situ process monitoring and control for plasma processing tools

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US22202409P 2009-06-30 2009-06-30
US22210209P 2009-06-30 2009-06-30
US61/222,024 2009-06-30
US61/222,102 2009-06-30
US12/555,674 US8983631B2 (en) 2009-06-30 2009-09-08 Arrangement for identifying uncontrolled events at the process module level and methods thereof
US12/555,674 2009-09-08

Publications (2)

Publication Number Publication Date
WO2011002800A2 WO2011002800A2 (en) 2011-01-06
WO2011002800A3 true WO2011002800A3 (en) 2011-04-07

Family

ID=43411705

Family Applications (5)

Application Number Title Priority Date Filing Date
PCT/US2010/040468 WO2011002804A2 (en) 2009-06-30 2010-06-29 Methods and apparatus to predict etch rate uniformity for qualification of a plasma chamber
PCT/US2010/040478 WO2011002811A2 (en) 2009-06-30 2010-06-29 Arrangement for identifying uncontrolled events at the process module level and methods thereof
PCT/US2010/040465 WO2011002803A2 (en) 2009-06-30 2010-06-29 Methods and apparatus for predictive preventive maintenance of processing chambers
PCT/US2010/040456 WO2011002800A2 (en) 2009-06-30 2010-06-29 Methods and arrangements for in-situ process monitoring and control for plasma processing tools
PCT/US2010/040477 WO2011002810A2 (en) 2009-06-30 2010-06-29 Methods for constructing an optimal endpoint algorithm

Family Applications Before (3)

Application Number Title Priority Date Filing Date
PCT/US2010/040468 WO2011002804A2 (en) 2009-06-30 2010-06-29 Methods and apparatus to predict etch rate uniformity for qualification of a plasma chamber
PCT/US2010/040478 WO2011002811A2 (en) 2009-06-30 2010-06-29 Arrangement for identifying uncontrolled events at the process module level and methods thereof
PCT/US2010/040465 WO2011002803A2 (en) 2009-06-30 2010-06-29 Methods and apparatus for predictive preventive maintenance of processing chambers

Family Applications After (1)

Application Number Title Priority Date Filing Date
PCT/US2010/040477 WO2011002810A2 (en) 2009-06-30 2010-06-29 Methods for constructing an optimal endpoint algorithm

Country Status (6)

Country Link
JP (5) JP2012532464A (en)
KR (5) KR101741274B1 (en)
CN (5) CN102804929B (en)
SG (5) SG176147A1 (en)
TW (5) TWI484435B (en)
WO (5) WO2011002804A2 (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102332383B (en) * 2011-09-23 2014-12-10 中微半导体设备(上海)有限公司 End point monitoring method for plasma etching process
US10128090B2 (en) 2012-02-22 2018-11-13 Lam Research Corporation RF impedance model based fault detection
US9502221B2 (en) 2013-07-26 2016-11-22 Lam Research Corporation Etch rate modeling and use thereof with multiple parameters for in-chamber and chamber-to-chamber matching
TWI677264B (en) * 2013-12-13 2019-11-11 美商蘭姆研究公司 Rf impedance model based fault detection
US10192763B2 (en) * 2015-10-05 2019-01-29 Applied Materials, Inc. Methodology for chamber performance matching for semiconductor equipment
US10269545B2 (en) * 2016-08-03 2019-04-23 Lam Research Corporation Methods for monitoring plasma processing systems for advanced process and tool control
US9972478B2 (en) * 2016-09-16 2018-05-15 Lam Research Corporation Method and process of implementing machine learning in complex multivariate wafer processing equipment
US11067515B2 (en) * 2017-11-28 2021-07-20 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus and method for inspecting a wafer process chamber
CN108847381A (en) * 2018-05-25 2018-11-20 深圳市华星光电半导体显示技术有限公司 The method for testing substrate and extended testing system substrate service life
US10651097B2 (en) 2018-08-30 2020-05-12 Lam Research Corporation Using identifiers to map edge ring part numbers onto slot numbers
DE102019209110A1 (en) * 2019-06-24 2020-12-24 Sms Group Gmbh Industrial plant, in particular plant in the metal-producing industry or the aluminum or steel industry, and method for operating an industrial plant, in particular a plant in the metal-producing industry or the aluminum or steel industry
JP7289992B1 (en) * 2021-07-13 2023-06-12 株式会社日立ハイテク Diagnostic apparatus and diagnostic method, plasma processing apparatus and semiconductor device manufacturing system
US20230195074A1 (en) * 2021-12-21 2023-06-22 Applied Materials, Inc. Diagnostic methods for substrate manufacturing chambers using physics-based models
US20230260767A1 (en) * 2022-02-15 2023-08-17 Applied Materials, Inc. Process control knob estimation

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5272872A (en) * 1992-11-25 1993-12-28 Ford Motor Company Method and apparatus of on-board catalytic converter efficiency monitoring
US20040055868A1 (en) * 2002-09-24 2004-03-25 Scientific Systems Research Limited Method for fault detection in a plasma process
US20060144335A1 (en) * 2004-12-30 2006-07-06 Research Electro-Optics, Inc. Methods and devices for monitoring and controlling thin film processing

Family Cites Families (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3301238B2 (en) * 1994-10-25 2002-07-15 三菱電機株式会社 Etching method
JPH08148474A (en) * 1994-11-16 1996-06-07 Sony Corp Dry etching end point detecting method and device
JPH09306894A (en) * 1996-05-17 1997-11-28 Sony Corp Optimum emission spectrum automatic detecting system
JP3630931B2 (en) * 1996-08-29 2005-03-23 富士通株式会社 Plasma processing apparatus, process monitoring method, and semiconductor device manufacturing method
US6197116B1 (en) * 1996-08-29 2001-03-06 Fujitsu Limited Plasma processing system
US5993615A (en) * 1997-06-19 1999-11-30 International Business Machines Corporation Method and apparatus for detecting arcs
EP1025276A1 (en) * 1997-09-17 2000-08-09 Tokyo Electron Limited Device and method for detecting and preventing arcing in rf plasma systems
US5986747A (en) 1998-09-24 1999-11-16 Applied Materials, Inc. Apparatus and method for endpoint detection in non-ionizing gaseous reactor environments
US8617351B2 (en) * 2002-07-09 2013-12-31 Applied Materials, Inc. Plasma reactor with minimal D.C. coils for cusp, solenoid and mirror fields for plasma uniformity and device damage reduction
JP2001338856A (en) * 2000-05-30 2001-12-07 Tokyo Seimitsu Co Ltd Process controller for semiconductor manufacturing system
JP4554037B2 (en) * 2000-07-04 2010-09-29 東京エレクトロン株式会社 Consumable consumption level prediction method and deposited film thickness prediction method
US6567718B1 (en) * 2000-07-28 2003-05-20 Advanced Micro Devices, Inc. Method and apparatus for monitoring consumable performance
US6391787B1 (en) * 2000-10-13 2002-05-21 Lam Research Corporation Stepped upper electrode for plasma processing uniformity
US6821794B2 (en) 2001-10-04 2004-11-23 Novellus Systems, Inc. Flexible snapshot in endpoint detection
JP2003151955A (en) * 2001-11-19 2003-05-23 Nec Kansai Ltd Plasma etching method
AU2003239392A1 (en) * 2002-05-29 2003-12-19 Tokyo Electron Limited Method and system for data handling, storage and manipulation
US6825050B2 (en) * 2002-06-07 2004-11-30 Lam Research Corporation Integrated stepwise statistical process control in a plasma processing system
US20040031052A1 (en) * 2002-08-12 2004-02-12 Liberate Technologies Information platform
EP1546827A1 (en) * 2002-09-30 2005-06-29 Tokyo Electron Limited Method and apparatus for the monitoring and control of a semiconductor manufacturing process
CN100440665C (en) * 2002-10-25 2008-12-03 S&C电力公司 Method and apparatus for control of an electric power distribution system in response to circuit abnormalities
JP4365109B2 (en) * 2003-01-29 2009-11-18 株式会社日立ハイテクノロジーズ Plasma processing equipment
US6969619B1 (en) * 2003-02-18 2005-11-29 Novellus Systems, Inc. Full spectrum endpoint detection
JP2004295348A (en) * 2003-03-26 2004-10-21 Mori Seiki Co Ltd Maintenance management system of machine tool
US20060006139A1 (en) * 2003-05-09 2006-01-12 David Johnson Selection of wavelengths for end point in a time division multiplexed process
JP2004335841A (en) * 2003-05-09 2004-11-25 Tokyo Electron Ltd Prediction system and prediction method for plasma treatment apparatus
WO2004102642A2 (en) * 2003-05-09 2004-11-25 Unaxis Usa Inc. Envelope follower end point detection in time division multiplexed processes
US7062411B2 (en) * 2003-06-11 2006-06-13 Scientific Systems Research Limited Method for process control of semiconductor manufacturing equipment
JP4043408B2 (en) * 2003-06-16 2008-02-06 東京エレクトロン株式会社 Substrate processing apparatus and substrate processing method
US6902646B2 (en) * 2003-08-14 2005-06-07 Advanced Energy Industries, Inc. Sensor array for measuring plasma characteristics in plasma processing environments
KR100567745B1 (en) * 2003-09-25 2006-04-05 동부아남반도체 주식회사 Life predictive apparatus for a target of sputtering equipment and its operating method
US8036869B2 (en) * 2003-09-30 2011-10-11 Tokyo Electron Limited System and method for using first-principles simulation to control a semiconductor manufacturing process via a simulation result or a derived empirical model
US7930053B2 (en) * 2003-12-23 2011-04-19 Beacons Pharmaceuticals Pte Ltd Virtual platform to facilitate automated production
US7233878B2 (en) * 2004-01-30 2007-06-19 Tokyo Electron Limited Method and system for monitoring component consumption
US7146237B2 (en) * 2004-04-07 2006-12-05 Mks Instruments, Inc. Controller and method to mediate data collection from smart sensors for fab applications
JP2006004992A (en) * 2004-06-15 2006-01-05 Seiko Epson Corp Polishing device managing system, managing device, control program thereof and control method thereof
TWI336823B (en) * 2004-07-10 2011-02-01 Onwafer Technologies Inc Methods of and apparatuses for maintenance, diagnosis, and optimization of processes
US7292045B2 (en) * 2004-09-04 2007-11-06 Applied Materials, Inc. Detection and suppression of electrical arcing
JP4972277B2 (en) * 2004-11-10 2012-07-11 東京エレクトロン株式会社 Substrate processing apparatus recovery method, apparatus recovery program, and substrate processing apparatus
JP4707421B2 (en) * 2005-03-14 2011-06-22 東京エレクトロン株式会社 Processing apparatus, consumable part management method for processing apparatus, processing system, and consumable part management method for processing system
JP2006328510A (en) * 2005-05-30 2006-12-07 Ulvac Japan Ltd Plasma treatment method and device
TWI338321B (en) * 2005-06-16 2011-03-01 Unaxis Usa Inc Process change detection through the use of evolutionary algorithms
US7409260B2 (en) * 2005-08-22 2008-08-05 Applied Materials, Inc. Substrate thickness measuring during polishing
US7302363B2 (en) * 2006-03-31 2007-11-27 Tokyo Electron Limited Monitoring a system during low-pressure processes
US7413672B1 (en) * 2006-04-04 2008-08-19 Lam Research Corporation Controlling plasma processing using parameters derived through the use of a planar ion flux probing arrangement
US7829468B2 (en) * 2006-06-07 2010-11-09 Lam Research Corporation Method and apparatus to detect fault conditions of plasma processing reactor
KR20080006750A (en) * 2006-07-13 2008-01-17 삼성전자주식회사 Plasma doping system for fabrication of semiconductor device
US20080063810A1 (en) * 2006-08-23 2008-03-13 Applied Materials, Inc. In-situ process state monitoring of chamber
CN100587902C (en) * 2006-09-15 2010-02-03 北京北方微电子基地设备工艺研究中心有限责任公司 On-line predication method for maintaining etching apparatus
JP2008158769A (en) * 2006-12-22 2008-07-10 Tokyo Electron Ltd Substrate processing system, controller, setting information monitoring method, and storage medium with setting information monitoring program stored
US7548830B2 (en) * 2007-02-23 2009-06-16 General Electric Company System and method for equipment remaining life estimation
US7674636B2 (en) * 2007-03-12 2010-03-09 Tokyo Electron Limited Dynamic temperature backside gas control for improved within-substrate process uniformity
US8055203B2 (en) * 2007-03-14 2011-11-08 Mks Instruments, Inc. Multipoint voltage and current probe system
JP2008311338A (en) * 2007-06-13 2008-12-25 Harada Sangyo Kk Vacuum treatment apparatus and abnormal discharge precognition device used therefor, and control method of vacuum treatment apparatus
KR100892248B1 (en) * 2007-07-24 2009-04-09 주식회사 디엠에스 Endpoint detection device for realizing real-time control of a plasma reactor and the plasma reactor comprising the endpoint detection device and the endpoint detection method
US20090106290A1 (en) * 2007-10-17 2009-04-23 Rivard James P Method of analyzing manufacturing process data
JP4983575B2 (en) * 2007-11-30 2012-07-25 パナソニック株式会社 Plasma processing apparatus and plasma processing method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5272872A (en) * 1992-11-25 1993-12-28 Ford Motor Company Method and apparatus of on-board catalytic converter efficiency monitoring
US20040055868A1 (en) * 2002-09-24 2004-03-25 Scientific Systems Research Limited Method for fault detection in a plasma process
US20060144335A1 (en) * 2004-12-30 2006-07-06 Research Electro-Optics, Inc. Methods and devices for monitoring and controlling thin film processing

Also Published As

Publication number Publication date
CN102473631A (en) 2012-05-23
TWI536193B (en) 2016-06-01
JP2012532461A (en) 2012-12-13
SG176566A1 (en) 2012-01-30
CN102473590B (en) 2014-11-26
KR20120047871A (en) 2012-05-14
JP2012532460A (en) 2012-12-13
CN102474968A (en) 2012-05-23
WO2011002800A2 (en) 2011-01-06
CN102473590A (en) 2012-05-23
SG176565A1 (en) 2012-01-30
TWI480917B (en) 2015-04-11
CN102804929A (en) 2012-11-28
KR20120037421A (en) 2012-04-19
TW201115288A (en) 2011-05-01
WO2011002810A2 (en) 2011-01-06
TWI484435B (en) 2015-05-11
TWI509375B (en) 2015-11-21
JP5599882B2 (en) 2014-10-01
WO2011002810A3 (en) 2011-04-14
SG176564A1 (en) 2012-01-30
TW201112302A (en) 2011-04-01
JP5629770B2 (en) 2014-11-26
TW201129936A (en) 2011-09-01
CN102474968B (en) 2015-09-02
WO2011002803A2 (en) 2011-01-06
TW201108022A (en) 2011-03-01
KR101741274B1 (en) 2017-05-29
JP2012532462A (en) 2012-12-13
JP2012532463A (en) 2012-12-13
KR101741271B1 (en) 2017-05-29
KR20120037420A (en) 2012-04-19
WO2011002810A4 (en) 2011-06-03
KR101708078B1 (en) 2017-02-17
KR101741272B1 (en) 2017-05-29
CN102804353B (en) 2015-04-15
JP5624618B2 (en) 2014-11-12
WO2011002811A3 (en) 2011-02-24
WO2011002804A2 (en) 2011-01-06
TW201129884A (en) 2011-09-01
SG176567A1 (en) 2012-01-30
TWI495970B (en) 2015-08-11
SG176147A1 (en) 2011-12-29
JP5693573B2 (en) 2015-04-01
WO2011002804A3 (en) 2011-03-03
CN102804929B (en) 2015-11-25
WO2011002811A2 (en) 2011-01-06
KR20120037419A (en) 2012-04-19
JP2012532464A (en) 2012-12-13
CN102804353A (en) 2012-11-28
KR101708077B1 (en) 2017-02-17
KR20120101293A (en) 2012-09-13
CN102473631B (en) 2014-11-26
WO2011002803A3 (en) 2011-03-03

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