JP4972277B2 - Substrate processing apparatus recovery method, apparatus recovery program, and substrate processing apparatus - Google Patents

Description

  The present invention relates to a substrate processing apparatus restoration method, a substrate processing apparatus restoration program, and a substrate processing apparatus, and more particularly to a restoration method and a restoration program after maintenance of a substrate processing apparatus.

  In general, a substrate processing system that performs a predetermined process such as a film forming process or an etching process on a semiconductor wafer (hereinafter referred to as a “wafer”) as a substrate includes a process chamber (substrate processing apparatus) that stores the wafer and performs a predetermined process. , Hereinafter referred to as “P / C”) and an atmospheric transfer device that takes out a wafer from a wafer cassette as a sealed container for storing a predetermined number of wafers, and is disposed between the atmospheric transfer device and the P / C. And a load lock chamber for carrying wafers in and out between the atmospheric transfer device and the P / C.

  In such a substrate processing system, the P / C has a cylindrical container chamber (hereinafter referred to as “chamber”), and performs desired processing on the wafer by plasma or the like in the chamber. The plasma in the chamber not only etches the wafer, but also consumes the components that make up the chamber, and also generates reaction products such as deposits. Since the reaction product adheres to the surface of the component, every time a predetermined processing time elapses, the lid that partitions the chamber from the outside is opened, the consumable component in the chamber is replaced, and the component to which the reaction product adheres It is necessary to perform maintenance such as cleaning. When the maintenance is completed, the P / C return operation such as closing the lid and depressurizing the chamber is performed.

  During this P / C return operation, the wafer transfer status and the wafer surface etching rate are confirmed. For example, if the etching rate shows an abnormal value, the chamber is checked for leaks or the chamber lid is opened. It is necessary to reconfirm the inside of the chamber, for example, whether or not the component parts are dropped, whether or not the component parts are defective, or whether or not the component parts are defectively washed. There was a problem.

  Therefore, in recent years, if the mounting failure of components in the chamber occurs, the plasma generation state in the chamber becomes unstable. Therefore, the output of a high frequency power source that applies high frequency power to the chamber is monitored and the P / C A method for detecting an abnormality is known. In this method, a multivariate analysis result (hereinafter referred to as “normal model”) of a plurality of types of measurement data of the high-frequency power supply when the application state of the high-frequency power supply is stable, and a large amount of the same measurement data at the start of the P / C. By comparing the result of the variable analysis, it is detected that the high-frequency power source has reached a stable state (for example, see Patent Document 1).

According to this method, it is possible to detect an attachment error of a component in the chamber without opening the lid of the chamber, and therefore, it is possible to reduce the time required for P / C recovery compared to the conventional P / C recovery operation. .
Japanese Patent Laid-Open No. 2002-18274

  However, in the above-described method for monitoring the output of the high-frequency power source to detect P / C abnormality, multivariate analysis is required. However, since a method for selecting measurement data used for a normal model has not been established, However, there is a problem that the universality of the normal model cannot be ensured and the P / C abnormality determination cannot be performed accurately.

  Further, since each measurement data is standardized in the multivariate analysis, the value of the multivariate analysis result is not an absolute value. When an arbitrary multivariate analysis result is set as a threshold value, the value of the multivariate analysis result is not an absolute value, so it is difficult for the operator to understand the influence of the variation of each measurement data on the multivariate analysis result. As a result, since the subjectivity of the operator is included in setting the threshold value, there is still a problem that the universality of the normal model cannot be secured and the P / C abnormality determination cannot be performed accurately.

  Furthermore, since the environment in the chamber changes before and after maintenance, it is necessary to reset the normal model every time maintenance is performed. As a result, it takes time, and thus there is a problem in that the decrease in the operation rate of P / C cannot be resolved. .

  An object of the present invention is to provide a method for returning a substrate processing apparatus, a return program for the apparatus, and a substrate processing apparatus capable of accurately determining abnormality of the apparatus without reducing the operating rate of the substrate processing apparatus. There is.

In order to achieve the above object, a return method for a substrate processing apparatus according to claim 1 is a return method for a substrate processing apparatus having a container chamber, wherein a vacuuming step for evacuating the container chamber; A temperature setting step for setting the temperature of the container, an abnormality determination step for determining whether there is an abnormality in the container chamber, and a seasoning step for stabilizing the atmosphere in the container chamber so as to match a predetermined processing condition, In the temperature setting step, the temperature in the container chamber is a process for mass production of the substrate, which is a conventional return processing of the substrate, which is a dedicated processing condition for increasing the etching rate while ensuring the minimum required etching accuracy. Is set to a temperature different from the temperature in the container chamber, and the abnormality determination step includes data that changes according to a state change in the container chamber. Without even measure one data, and comparing the said measured data, and a reference data in a normal state of the container chamber corresponding to the measured data.

The method of recovery according to claim 2 substrate processing apparatus described in method of returning the substrate processing apparatus according to claim 1 Symbol placement, in the abnormality determining step, when performing the processing to the substrate, the reaction product in the container chamber A process gas that does not generate gas is introduced.

According to a third aspect of the present invention, there is provided a method for returning a substrate processing apparatus according to the second aspect , wherein the processing gas is a gas composed only of oxygen.

The substrate processing apparatus recovery method according to claim 4 is the substrate processing apparatus recovery method according to any one of claims 1 to 3 , wherein the measured data is stored in each component of the substrate processing apparatus. It is a log indicating a state.

The method of recovery according to claim 5 An apparatus as defined, in the return process of the substrate processing apparatus according to claim 4, wherein the log of the matching device for matching a high frequency power applied to the lower electrode disposed in the container chamber It is characterized by impedance.

The method of returning the substrate processing apparatus according to claim 6, wherein, in the method of returning the substrate processing apparatus according to claim 4, wherein the log, matching the high-frequency power applied to the lower electrode and the lower electrode disposed in the container chamber It is the voltage between the matching devices to be characterized.

The method of returning the substrate processing apparatus according to claim 7, wherein, in the method of returning the substrate processing apparatus according to claim 4, wherein the log, characterized in that it is a degree of opening of the control valve for controlling the pressure of said vessel chamber .

The method of recovery according to claim 8 An apparatus as defined, in the method of returning the substrate processing apparatus according to any one of claims 1 to 3, wherein the measured data, the emission of the substrate processing is carried out It is characterized by being data.

According to a ninth aspect of the present invention, there is provided the method for returning a substrate processing apparatus according to the eighth aspect , wherein the light emission data is a ratio of light emission amounts.

The method for returning a substrate processing apparatus according to claim 10 is the method for returning a substrate processing apparatus according to any one of claims 1 to 3 , wherein the measured data is a lower electrode disposed in the container chamber. It is the data regarding the high frequency power supply which supplies the high frequency electric power applied to.

The method for returning a substrate processing apparatus according to claim 11 is the method for returning a substrate processing apparatus according to any one of claims 1 to 10 , wherein the evacuation step sets a temperature in the container chamber to a normal value of the substrate. In this process, the temperature is set higher than the temperature in the container chamber .

The method for returning a substrate processing apparatus according to claim 12 is the method for returning a substrate processing apparatus according to any one of claims 1 to 11 , wherein the seasoning step includes two sheets subjected to continuous processing. Stability of the atmosphere in the container chamber is detected based on a difference in light emission data of the substrate.

The method of recovery according to claim 13 the substrate processing apparatus described in method of returning the substrate processing apparatus according to claim 12, wherein the seasoning step, stable atmosphere in the container chamber based on the differential value of the difference of the light emission data Is detected.

The method for returning a substrate processing apparatus according to claim 14 is the method for returning a substrate processing apparatus according to any one of claims 1 to 13 , wherein the abnormality determination step is performed in light emission of the substrate to be processed. Leakage in the container chamber is detected based on a ratio of light emission amounts of different wavelengths.

To achieve the above object, a substrate processing apparatus return program according to claim 15 is a substrate processing apparatus return program for causing a computer to execute a substrate processing apparatus return method having a container chamber. A vacuuming step for evacuating the container chamber, a temperature setting step for setting a temperature in the container chamber, an abnormality determining step for determining presence / absence of an abnormality in the container chamber, and a predetermined process for the atmosphere in the container chamber And a seasoning step for stabilizing to meet the conditions, and in the temperature setting step, the temperature in the container chamber is set to a dedicated processing condition for increasing the etching rate while ensuring the minimum necessary etching accuracy. set to a temperature different from the temperature of the container chamber in the production process of the substrate which is a conventional process of returning the substrate is In the abnormality determination step, at least one data among data changing in accordance with a change in the state in the container chamber is measured, and the measured data and the normal in the container chamber corresponding to the measured data are measured. It is characterized by comparing with reference data in the state.

In order to achieve the above object, the substrate processing apparatus according to claim 16 is a substrate processing apparatus having a container chamber, wherein a vacuum evacuating means for evacuating the container chamber, and a temperature for setting a temperature in the container chamber. Setting means; abnormality determining means for determining presence / absence of abnormality in the container chamber; and seasoning means for stabilizing the atmosphere in the container chamber so as to match predetermined processing conditions; and the temperature setting means, After the inside of the container is evacuated by the evacuating means, and before the determination of the presence / absence of abnormality by the abnormality determining means, the temperature in the container chamber is increased while ensuring the minimum necessary etching accuracy. the set temperature different container chamber in the mass production process of the substrate which is a conventional process of returning the substrate is a dedicated process conditions for the abnormality determination means Measure at least one of data that changes in response to a change in the condition in the container chamber, and compare the measured data with reference data in a normal condition in the container chamber corresponding to the measured data It is characterized by doing.

The method of returning the substrate processing apparatus according to claim 1, according to the substrate processing apparatus of the return program及 beauty claim 16, wherein the substrate processing apparatus according to claim 15, wherein, in the abnormality determination, in response to changes in the status of the container chamber At least one of the changing data is measured, and the measured data is compared with reference data in a normal state in the container chamber corresponding to the measured data. Therefore, the abnormality determination of the substrate processing apparatus can be accurately performed because the abnormality determination is performed based on the data that changes according to the state change in the container chamber without using the result of the multivariate analysis. In addition, since it is not necessary to reset the normal model every time maintenance is performed, it is possible to prevent a reduction in the operating rate of the substrate processing apparatus.

In addition, in the temperature setting, the temperature in the container room is set to a temperature different from the temperature in the container room in the mass production processing of the substrate, so that the atmosphere in the container room is set to the minimum substrate processing accuracy required for returning the substrate processing apparatus. The processing conditions that can be secured can be matched. Therefore, the substrate processing apparatus can be quickly returned.

According to the return method of the substrate processing apparatus according to claim 2 , when the substrate is processed in the abnormality determination, the processing gas that does not generate the reaction product is caused to flow into the container chamber. In addition, it is possible to smoothly shift to the substrate processing after the substrate processing apparatus is returned without depositing reaction products in the container chamber.

According to the return method of the substrate processing apparatus of the third aspect, since the gas flowing into the container chamber in the abnormality determination is a gas composed only of oxygen, it is possible to reliably prevent the generation of reaction products in the container chamber. it can.

According to the return method of the substrate processing apparatus according to claim 4 , since the measured data is a log indicating the state of each component of the substrate processing apparatus, the data can be obtained simultaneously with the processing, Judgment can be made quickly.

According to the return method of the substrate processing apparatus of the fifth aspect , the log as the measured data is the impedance of the matching unit that matches the high frequency power applied to the lower electrode disposed in the container chamber. The impedance of the matching unit varies depending on the generation state of plasma in the container chamber. Therefore, abnormality determination of the substrate processing apparatus can be reliably performed.

According to the return method of the substrate processing apparatus according to claim 6 , the log as the measured data is a voltage between the lower electrode arranged in the container chamber and the matching unit for matching the high frequency power applied to the lower electrode. It is. The voltage changes according to the state of generation of plasma in the container chamber. Therefore, abnormality determination of the substrate processing apparatus can be reliably performed.

According to the return method of the substrate processing apparatus of the seventh aspect , the log as the measured data is the opening degree of the control valve that controls the pressure in the container chamber. The opening degree changes according to the generation state of plasma in the container chamber. Therefore, abnormality determination of the substrate processing apparatus can be reliably performed.

According to the returning method of the substrate processing apparatus of the eighth aspect , the measured data is light emission data of the substrate to be processed. The light emission data can be easily measured and changes depending on the state of plasma generation in the container chamber. Therefore, it is possible to reliably determine the abnormality of the substrate processing apparatus without reliably reducing the operating rate of the substrate processing apparatus.

According to the returning method of the substrate processing apparatus of the ninth aspect, the light emission data as the measured data is a ratio of the light emission amount. Since the ratio of the light emission amounts is a dimensionless number, it is not affected by the magnitude of the absolute value. Therefore, the abnormality determination of the substrate processing apparatus can be performed accurately.

According to the return method of the substrate processing apparatus according to claim 10 , since the measured data is data on the high frequency power source that supplies the high frequency power applied to the lower electrode disposed in the container chamber, the data can be easily obtained. Measurement can be performed, and abnormality determination can be easily performed.

According to method of returning the substrate processing apparatus according to claim 11, evacuated by raising the temperature of the container chamber. If the temperature in the container chamber rises, the evaporation of moisture attached to the components constituting the container chamber is promoted. Therefore, the substrate processing apparatus can be quickly returned.

According to the return method of the substrate processing apparatus of the twelfth aspect , in the seasoning, the stability of the atmosphere in the container chamber is detected based on the difference between the light emission data of the two substrates that have been processed successively. When the atmosphere in the container chamber is stabilized, fluctuations in the amount of light emitted from the substrate are also stabilized. Therefore, it is possible to easily determine the stability of the atmosphere in the container chamber.

According to the returning method of the substrate processing apparatus of the thirteenth aspect , in seasoning, the stability of the atmosphere in the container chamber is detected based on the differential value of the difference between the light emission data of the two substrates that have been processed successively. . The differential value of the difference between the light emission data is not affected by the magnitude of the absolute value. Therefore, it is possible to more accurately determine the stability of the atmosphere in the container chamber.

According to the returning method of the substrate processing apparatus of the fourteenth aspect , in the abnormality determination, the leakage of the container chamber is detected based on the ratio of the light emission amounts of different wavelengths in the light emission of the substrate to be processed. When leakage of the container chamber occurs, a predetermined gas flows in from the outside, and the light emission state of plasma changes according to the type of the gas. Further, since the ratio of the light emission amounts is a dimensionless number, it is not affected by the magnitude of the absolute value. Therefore, the abnormality determination of the substrate processing apparatus can be performed more accurately.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

  First, a substrate processing apparatus according to an embodiment of the present invention will be described.

  FIG. 1 is a cross-sectional view showing a schematic configuration of a process chamber as a substrate processing apparatus according to the present embodiment.

  In FIG. 1, a process chamber (hereinafter referred to as “P / C”) 2 configured as an etching processing apparatus for performing an etching process on a semiconductor wafer has a cylindrical chamber 10 made of metal, for example, aluminum or stainless steel. In the chamber 10, for example, a lower electrode 11 is disposed as a stage on which a semiconductor wafer having a diameter of 200 mm is placed.

  Between the side wall of the chamber 10 and the lower electrode 11, an exhaust path 12 that functions as a flow path for discharging the gas above the lower electrode 11 to the outside of the chamber 10 is formed. An annular baffle plate 13 is disposed in the middle of the exhaust passage 12, and a space downstream from the baffle plate 13 of the exhaust passage 12 is an automatic pressure control valve (not shown) that is a variable butterfly valve (hereinafter referred to as an automatic pressure control valve). Communication with APC). The APC is connected to a turbo molecular pump or a dry pump, which is an exhaust pump for evacuation, and not only controls the pressure in the chamber 10 but also depressurizes the inside of the chamber 10 to a nearly vacuum state by TMP and DP.

  A lower high frequency power source 18 is connected to the lower electrode 11 via a lower matching unit 19, and the lower high frequency power source 18 applies a predetermined high frequency power to the lower electrode 11. The lower matching unit 19 reduces the reflection of the high frequency power from the lower electrode 11 and maximizes the incidence efficiency of the high frequency power on the lower electrode 11.

An ESC 20 for adsorbing a semiconductor wafer with an electrostatic attraction force is disposed above the lower electrode 11. A DC power supply (not shown) is electrically connected to the ESC 20. The semiconductor wafer is adsorbed and held on the upper surface of the lower electrode 11 by a Coulomb force or a Johnson-Rahbek force generated by a DC voltage applied to the ESC 20 from a DC power source. An annular focus ring 24 made of silicon (Si) or the like is disposed on the upper peripheral edge of the lower electrode 11, and the focus ring 24 converges the plasma generated above the lower electrode 11 toward the semiconductor wafer. The periphery of the focus ring 24 is covered with an annular cover ring 14 whose surface is covered with Y ₂ O ₃ or the like.

  For example, an annular coolant chamber 25 extending in the circumferential direction is provided inside the lower electrode 11. A coolant having a predetermined temperature, for example, cooling water, is circulated and supplied to the coolant chamber 25 through a pipe 26 from a chiller unit (not shown), and the processing temperature of the semiconductor wafer on the lower electrode 11 depends on the temperature of the coolant. The temperature of the lower electrode 11 is controlled.

  Below the lower electrode 11, a support body 15 extending downward from the lower portion of the lower electrode 11 is disposed. The support 15 supports the lower electrode 11 and moves the lower electrode 11 as a GAP up and down by rotating a ball screw (not shown). Further, the support 15 is covered with a bellows cover 16 to be shielded from the atmosphere in the chamber 10.

  A shower head 33 is disposed on the ceiling of the chamber 10. The shower head 33 includes a disk-shaped upper electrode (CEL) 35 having a large number of gas vent holes 34 facing the chamber 10, and an electrode disposed above the upper electrode 35 and detachably supporting the upper electrode 35. And a support 36.

  In this P / C2, when the semiconductor wafer is carried into and out of the chamber 10, the lower electrode 11 is lowered to the carry-in / out position of the semiconductor wafer, and when the semiconductor wafer is etched, the lower electrode 11 is moved to the semiconductor wafer. And the ESC 20 sucks and holds the semiconductor wafer.

  An upper high frequency power supply 17 is connected to the upper electrode 35 via the upper matching unit 21, and the upper high frequency power supply 17 applies a predetermined high frequency power to the upper electrode 35. The upper matching unit 21 reduces the reflection of the high frequency power from the upper electrode 35 to maximize the incidence efficiency of the high frequency power on the upper electrode 35.

  A buffer chamber 37 is provided inside the electrode support 36, and a processing gas introduction pipe 38 from a processing gas supply device 40 described later is connected to the buffer chamber 37. In addition, a refrigerant chamber (not shown) connected to a chiller unit (not shown) is disposed below the electrode support 36, and the electrode support 36 functions as a cooling plate (cooling plate) for the upper electrode 35. The temperature of the electrode 35 is controlled.

A valve 41 is disposed in the middle of the processing gas introduction pipe 38, and a processing gas supply device 40 is disposed upstream of the valve 41. The processing gas supply device 40 includes a silicon tetrafluoride supply unit 42 that supplies silicon tetrafluoride (SiF ₄ ), a silicon tetrahydride supply unit 43 that supplies silicon tetrahydride (SiH ₄ ), and an oxygen gas ( The oxygen gas supply unit 44 for supplying O ₂ ), the argon gas supply unit 45 for supplying argon gas (Ar), and the silicon tetrafluoride supply unit 42 to the argon gas supply unit 45 are disposed in correspondence with each other. MFC (Mass Flow Controller) 46-49. The processing gas supply device 40 mixes silicon tetrafluoride, silicon tetrahydride, oxygen gas, argon gas, and the like at a predetermined flow rate ratio and supplies the mixed gas to the chamber 10 as a processing gas. At this time, each of the MFCs 46 to 49 is supplied. Controls the flow rate of the processing gas to control the pressure of the chamber 10 to a desired value in cooperation with the APC described above. Further, carbon tetrafluoride (CF ₄ ) may be mixed in the processing gas supplied by the processing gas supply device 40.

  An annular holder 54 that holds the shower head 33 is disposed around the shower head 33, and a shield ring 55 that protects the gap between the holder 54 and the shower head 33 from plasma, which will be described later, on the lower surface of the holder 54. Has been placed.

  A cylindrical rectifying exhaust ring 56 that protrudes downward is disposed around the shield ring 55. The rectifying exhaust ring 56 prevents the plasma generated in the space between the lower electrode 11 and the upper electrode 35 from diffusing and contains the plasma in the space.

  The in-chamber components such as the upper electrode 35 and the shield ring 55 described above are assembled to the chamber 10 by screws as shown in FIG. In FIG. 2, each screw is shielded from the atmosphere in the chamber 10 by a screw cover 58, a screw cap (not shown) or the like.

  On the side wall of the chamber 10, two transmission windows 50 and 51 made of quartz glass are arranged symmetrically with respect to the lower electrode 11 at a height corresponding to the processing position of the semiconductor wafer. A light source 52 for irradiating laser light is disposed on the opposite side of the transmission window 50 from the chamber 10 side, and a light source 52 is irradiated on the opposite side of the transmission window 51 from the chamber 10 side. A light receiving sensor 53 for receiving the laser beam that has passed is disposed. Here, since the slit of the rectifying exhaust ring 56 described above is formed in a portion facing the light source 52 and the light receiving sensor 53, the laser light emitted from the light source 52 passes through the slit of the rectifying exhaust ring 56 and passes through the lower part. The light reaches the light receiving sensor 53 via the upper portion of the semiconductor wafer placed on the electrode 11.

  Further, a heater (not shown) is built in the side wall of the chamber 10, and the heater controls the temperature of the side wall when plasma processing is performed on the semiconductor wafer.

  When plasma processing is performed on a semiconductor wafer, the atmosphere above the semiconductor wafer emits light according to the concentration and pressure of the processing gas due to the plasma. Therefore, it is possible to monitor the generation state of the plasma by measuring the light emission state. Is possible. In P / C 2, as described above, the laser light passes above the semiconductor wafer, so that the plasma generation state can be monitored by the light source 52 and the light receiving sensor 53.

  In the P / C 2 chamber 10, as described above, high-frequency power is applied to the lower electrode 11 and the upper electrode 35, and the processing gas is generated in the space between the lower electrode 11 and the upper electrode 35 by the applied high-frequency power. A high-density plasma is generated from this, and ions and radicals are generated. These generated radicals and ions are focused on the surface of the semiconductor wafer by the focus ring 24, and the surface of the semiconductor wafer is physically or chemically etched.

  Further, the P / C 2 includes a control unit 57 that controls the operation of each component and records the operation status of each component as a device log. For example, when plasma processing is performed on a semiconductor wafer, the predetermined control unit 57 controls the temperature of the chamber 10 to a desired temperature by controlling the chiller unit and the heater on the side wall of the chamber according to a recipe indicating the processing procedure. In addition, a desired amount of plasma is generated between the lower electrode 11 and the upper electrode 35 by controlling the operations of the processing gas supply device 40, the upper high-frequency power source 17, and the lower high-frequency power source 18.

  Further, when the plasma processing is performed on the semiconductor wafer, the control unit 57 uses the impedance of the lower matching unit 19 and the upper matching unit 21, the voltage (Vpp) between the lower electrode 11 and the lower matching unit 19 as an apparatus log, or The valve opening (APC ANGLE) of the APC is recorded, and further, as the measurement data, the light emission state (light emission data) of the upper atmosphere of the semiconductor wafer measured by the light source 52 and the light receiving sensor 53, the current and voltage of the lower high frequency power supply 18 Record etc.

  Next, a return method of the substrate processing apparatus according to the present embodiment will be described.

  FIG. 3 is a flowchart of an auto setup process as a return method of the substrate processing apparatus according to the present embodiment. This processing is executed by the control unit 57 by a program to be described later after the above-described P / C2 maintenance. The P / C 2 after the auto setup process can perform a predetermined etching process on a semiconductor wafer for mass production according to a predetermined recipe.

  In FIG. 3, first, APC is opened and TMP and DP are depressurized until the inside of the chamber 10 is almost in a vacuum state (evacuation step) (step S31), and the heater in the chiller unit and the chamber side wall is in the chamber 10. Is controlled to a predetermined temperature (temperature setting step) (step S32), and an APC server (to be described later) detects P / C2 abnormality based on the apparatus log and measurement data of each component, for example, whether or not a component has dropped out and the chamber The presence or absence of 10 leaks is determined (abnormality determination step) (step S33).

  Thereafter, through the processing of a plurality of dummy wafers, the chiller unit, heater, APC, processing gas supply device 40, lower high-frequency power source 18, upper high-frequency power source 17, and the like are defined in a predetermined recipe, such as the atmosphere in the chamber 10. Stabilize to meet the predetermined processing conditions (seasoning step) (step S34), and further, the A / C server is connected to the P / C 2 or a monitor (not shown) provided in the APC server. Shows the occurrence status of a leak or the like, and ends this processing.

  The operator confirms the contents displayed on the monitor and immediately determines whether to perform predetermined processing on the semiconductor wafer for mass production, or interrupt the return operation and open the lid of the chamber 10 again to perform maintenance. can do.

  According to the auto setup process of FIG. 3, the operator can detect the abnormality of P / C2 without opening the lid of the chamber 10, so that, for example, the return operation that conventionally required 3 hours is performed 2 The P / C2 return operation can be performed quickly, such as being able to be done in time, so that the operating rate of P / C2 can be improved.

  Hereinafter, each step in the auto setup process of FIG. 3 will be described in detail.

  First, the vacuuming step of step S31 will be described.

  In evacuation of the chamber in the conventional return processing, the temperature in the chamber is set to be the same as the temperature at the time of etching processing of a semiconductor wafer for mass production (hereinafter referred to as “mass production etching processing”). Moisture adhering to each component and adhering to each component and alcohol adhering to each component by wet cleaning slowly evaporate, and as a result, it took time for evacuation.

  On the other hand, in step S31, the temperature in the chamber 10 is set higher than the temperature during the mass production etching process. Specifically, in evacuation, conventionally, the temperature of the upper electrode / chamber side wall / lower electrode was set to a constant value of 60/50/40 ° C., but in step S31, the heater or chiller unit on the chamber side wall First, the temperature of the upper electrode / chamber sidewall / lower electrode is set to 80/80/40 ° C., and after 1.5 hours, it is reset to 60/50/40 ° C.

  According to the evacuation in step S31, the temperature in the chamber 10 rises compared to the conventional case. If the temperature in the chamber 10 rises, evaporation of moisture and alcohol attached to each component constituting the chamber 10 is promoted. Therefore, P / C2 can be returned quickly.

  FIG. 4 is a graph comparing the evacuation time in the auto setup process of FIG. 3 and the conventional return process.

  In FIG. 4, the pressure discharge rate (Leak rate) from the inside of the chamber in the conventional return processing is shown by a dotted line, and the pressure discharge rate from the inside of the chamber 10 in the auto setup processing is shown by a solid line.

  As shown in FIG. 4, in order to reach 0.13 Pa / min (1 mT / min), which is a threshold value indicating the end of evacuation, 3.5 hours is required for the conventional return processing, but 3 for the auto setup processing. Reach in time. Therefore, according to the auto setup process, P / C2 can be returned quickly, and a reduction in the operating rate of P / C2 can be prevented.

  In step S31 described above, the temperature of the upper electrode / chamber side wall / lower electrode is controlled by the heater and chiller unit on the chamber side wall. However, the temperature in the chamber may be increased only by the heater on the chamber side wall, The temperature in the chamber may be increased by applying high-output high-frequency power to the electrode 11 or the upper electrode 35 (high power seasoning).

  Next, the chamber temperature setting step in step S32 will be described.

  In the conventional restoration process, the etching accuracy in the auto setup process may be lower than that in the mass production etching process, but the dummy wafer is etched under the same processing conditions as the mass production etching process at the chamber temperature setting. As a result, the dummy wafer is etched at an etching rate that is slower than necessary. As a result, it took time to set the chamber temperature.

  On the other hand, in step S32, in order to set the etching rate fast while ensuring the minimum necessary etching accuracy, it differs from the dedicated processing conditions (dedicated recipe), for example, the temperature in the chamber in the conventional return processing. Etching is performed on the dummy wafer at the temperature in the chamber 10 set to the temperature.

Specifically, in step S32, the internal pressure of the chamber 10 is set to 6.67 Pa (50 mT), the flow rate of oxygen gas supplied by the processing gas supply device 40 is set to 600 sccm, and the ESC 20 is directed toward the back side of the dummy wafer. The pressure of helium (He) gas as the heat transfer gas to be supplied is set to 6.67 × 10 ² Pa (5 torr) at the center of the back surface, and 3.33 × 10 ³ Pa (25 torr) at the peripheral portion of the back surface. In addition, the temperature of the upper electrode / chamber sidewall / lower electrode is set to a temperature at which the etching rate is increased while ensuring the minimum required etching accuracy .

  According to the chamber temperature setting in step S32, the atmosphere in the chamber 10 is matched with the processing conditions that can ensure the minimum etching accuracy required in the auto setup process based on the dedicated recipe for the auto setup process. The dummy wafer is etched at a fast etch rate. Therefore, P / C2 can be returned quickly.

  Normally, when mass production etching processing is performed in a plurality of P / Cs, different recipes are used in each P / C depending on the difference between the P / Cs, but a dedicated recipe is set in the auto setup processing. When the auto setup process is executed in a plurality of P / Cs, the same dedicated recipe is used in any P / C. Thereby, it is possible to measure light emission data and data related to the high frequency power source under the same conditions in any P / C, and to perform abnormality determination described later stably.

  Next, the abnormality determination step in step S33 will be described.

  In the conventional restoration process, in the abnormality determination, the same processing gas as the mass production etching process, for example, silicon tetrafluoride is introduced into the chamber to perform the etching process on the dummy wafer. Reaction products are likely to be generated, and deposits are deposited on the surface of each component during the restoration process, which causes generation of reaction products in the mass production etching process.

  On the other hand, in step S33, in order to prevent the generation of deposits, a dedicated processing gas, for example, oxygen gas which is a gas that does not generate a reaction product even if it is converted to plasma is used.

  According to the abnormality determination in step S33, since oxygen gas that does not generate a reaction product flows into the chamber 10 as a processing gas when etching the dummy wafer, the inside of the chamber 10 is restored when P / C2 is restored. Therefore, it is possible to smoothly shift to the mass production etching process after the return of P / C2 without depositing.

  In the abnormality determination step, an APC (Advanced Process Control) server as an external control device connected to the P / C 2 collects device logs and measurement data recorded in the control unit 57, and the collected device logs, etc. On the basis of the above, defective mounting of component parts, defective cleaning of the component parts, and leakage of the chamber 10 are detected. Here, the mounting failure of the component includes forgetting to mount the component, dropping off the component, incorrect component mounting position, and the like.

  First, detection of component attachment failure in the abnormality determination step will be described.

  As described above, when a component is not properly mounted in the chamber, the plasma generation state in the chamber becomes unstable. Therefore, when performing an etching process on the dummy wafer, it is possible to detect a component attachment failure by monitoring the plasma generation state in the chamber. In the present embodiment, a component mounting failure is detected based on an apparatus log or measurement data that is particularly affected by the plasma generation state.

  When a component mounting failure is detected based on the apparatus log, the apparatus log is recorded by the control unit 57 according to the progress of the dummy wafer etching process, so the APC server or the like obtains the apparatus log simultaneously with the dummy wafer etching process. And abnormality determination can be performed quickly.

  Hereinafter, the apparatus log used for detection of component attachment failure will be described in detail.

  First, a case where the impedance of the lower matching unit 19 is used as an apparatus log for detecting a component attachment failure will be described.

  When the plasma generation state in the chamber changes, the high frequency power applied from the lower high frequency power supply 18 changes so as to maintain the plasma in a desired state, and the impedance of the lower matching unit 19 also changes accordingly. Thus, by monitoring the impedance of the lower matching unit 19, it is possible to detect a change in the plasma generation state in the chamber, and in turn, a component mounting failure.

  FIG. 5 is a graph showing the relationship between improper component mounting and the impedance of the lower matching unit.

  In FIG. 5, the horizontal axis represents the lot number (Lot number) on which the auto setup process is executed, and the vertical axis represents the measured impedance value in each lot.

  The reason why the measured impedance value fluctuates in each lot is that the etching process was performed on 25 dummy wafers in each lot and the measured impedance value for each lot in each lot was plotted on a graph. The measured value of each impedance is an average value during the etching process for each dummy wafer.

  The component mounting status in each lot is as shown in Table 1 below.

  For example, in lot 2, the dummy wafer is etched with the rectifying exhaust ring 56 removed. Further, the reference for lot 3 or the like is a state in which all the component parts are normally attached, and a threshold for determining attachment failure of the component parts is set based on the measured impedance value in the lot. . In FIG. 5, the maximum value of the measured impedance value in the lot in the reference state is set as the upper threshold value (Reference value (max)), and the minimum value of the measured impedance value is set as the lower threshold value (Reference value (min)). Set to.

  In FIG. 5, since the actual measured value of the impedance in the lot 2 clearly exceeds the upper limit threshold value, it is possible to detect the falling off of the rectification exhaust ring 56 by monitoring the impedance.

  In FIG. 5 described above, the average value during the etching process for each dummy wafer is used as the actual measurement value of the impedance. However, the minimum value or the maximum value may be used, and in this case, the components other than the rectifying exhaust ring 56 are omitted. Can also be detected.

  Further, since the impedance of the upper matching unit 21 also changes in accordance with the plasma generation state in the chamber, it is possible to detect the dropout of each component even using the measured impedance value of the upper matching unit 21.

  According to the abnormality determination in step S33, the impedance of the lower matching unit 19 is used as an apparatus log for detecting a component attachment failure. The impedance of the lower matching unit 19 changes in accordance with the change in the plasma generation state in the chamber 10, and in other words, the presence or absence of the missing component. Therefore, it is possible to reliably detect the dropout of the component parts at P / C2.

  Next, a case where the voltage (Vpp) between the lower electrode 11 and the lower matching unit 19 (hereinafter referred to as “lower voltage”) is used as an apparatus log for detecting a component attachment failure will be described.

  When the plasma generation state in the chamber changes, the high frequency power applied from the lower high frequency power supply 18 changes so as to maintain the plasma in a desired state, and the lower voltage also changes accordingly. As a result, by monitoring the lower voltage, it is possible to detect a change in the plasma generation state in the chamber, that is, a defective mounting of the component parts.

  FIG. 6 is a graph showing the relationship between improper component mounting and the voltage between the lower electrode and the lower matching unit.

  In FIG. 6, the horizontal axis represents the lot number for which the auto setup process is executed, and the vertical axis represents the measured value of the lower voltage in each lot. Further, the component mounting situation in each lot is as shown in Table 1 described above as in FIG.

  The lower voltage fluctuates in each lot for the same reason as in FIG. In FIG. 6, as in FIG. 5, the measured value of each lower voltage is an average value during the etching process for each dummy wafer. In FIG. 6, the maximum value of the measured value of the lower voltage in the lot in the reference state is set as the upper threshold (Reference value (max)), and the minimum value of the measured value of the lower voltage is set as the lower threshold (Reference value). (min)).

  In FIG. 6, the measured value of the lower voltage in lot 12 clearly exceeds the upper threshold, and the measured value of the lower voltage in lot 8 and lot 14 is clearly below the lower threshold. Can be detected to detect that the cover ring 14 and the focus ring 24 are dropped, only the cover ring 14 is dropped, and the screw cap on the cooling plate side is dropped.

  In FIG. 6 described above, the average value during the etching process for each dummy wafer is used as the actually measured value of the lower voltage. However, the minimum value or the maximum value may be used. It is also possible to detect dropout.

  In addition, since the voltage between the upper electrode 35 and the upper matching unit 21 also changes according to the plasma generation state in the chamber, the measured values of the voltages between the upper electrode 35 and the upper matching unit 21 can be used for each component. Dropout can be detected.

  According to the abnormality determination in step S33, the lower voltage is used as a device log for detecting a component attachment failure. The lower voltage changes in accordance with changes in the plasma generation state in the chamber 10, and in other words, whether or not the components are removed. Therefore, it is possible to reliably detect the dropout of the component parts at P / C2.

  Next, a description will be given of a case where the APC valve opening (APC ANGLE) is used as an apparatus log for detecting a component attachment failure.

  When the plasma generation state in the chamber changes, it is necessary to change the pressure in the chamber 10 so as to maintain the plasma in a desired state, and accordingly, the valve opening of the APC also changes. As a result, by monitoring the opening degree of the APC, it is possible to detect a change in the state of plasma generation in the chamber, and in other words, a component mounting failure.

  FIG. 7 is a graph showing the relationship between the component mounting failure and the APC valve opening.

  In FIG. 7, the horizontal axis represents the number of the lot for which the auto setup process is executed, and the vertical axis represents the measured value of the APC valve opening in each lot. Further, the component mounting situation in each lot is as shown in Table 1 described above as in FIG.

  The reason why the APC valve opening varies in each lot is the same as in FIG. In FIG. 7, as in FIG. 5, the measured value of the valve opening of each APC is an average value during the etching process for each dummy wafer. Further, in FIG. 7, the maximum value of the actual measured value of the APC valve opening in the lot in the reference state is set as the upper limit threshold (Reference value (max)), and the minimum value of the actual measured value of the APC valve opening is set as the maximum value. Set the lower threshold (Reference value (min)).

  In FIG. 7, since the actual measured value of the APC valve opening in lot 2 clearly exceeds the upper threshold, it is possible to detect the dropout of the rectifying exhaust ring 56 by monitoring the APC valve opening. .

  In FIG. 7 described above, the average value during the etching process for each dummy wafer is used as the actual measurement value of the valve opening of the APC. However, the minimum value or the maximum value may be used. It is also possible to detect the dropout of the component parts.

  According to the abnormality determination in step S33, the valve opening degree of the APC is used as an apparatus log for detecting a component attachment failure. The valve opening degree of the APC changes according to the change of the plasma generation state in the chamber 10, and in other words, whether or not the components are dropped. Therefore, it is possible to reliably detect the dropout of the component parts at P / C2.

  In the above-described abnormality determination in step S33, the case where the impedance of the lower matching unit 19, the voltage between the lower electrode 11 and the lower matching unit 19, and the valve opening of the APC are used as a device log for detecting a component mounting failure. As described above, the apparatus log used for the abnormality determination is not limited to these, and any apparatus log can be used as long as the apparatus log changes according to the change of the plasma generation state in the chamber. Since the plasma generation state in the chamber also changes depending on the type of P / C, the relationship between the plasma generation state in the chamber and the dropout of the components in various P / Cs is investigated in advance. It is preferable to select an apparatus log for detecting a component attachment failure based on the result.

  On the other hand, when a component attachment failure is detected based on measurement data such as light emission data above the semiconductor wafer or data on a high-frequency power supply, these measurement data are easily measured by the control unit 57 during the dummy wafer etching process. Therefore, the APC server or the like can easily obtain the measurement data, and the abnormality determination can be easily performed.

  Hereinafter, measurement data used for detecting a component attachment failure will be described in detail.

  First, a case will be described in which light emission data above a semiconductor wafer is used as measurement data for detecting a component attachment failure.

  When a component attachment failure occurs in the chamber, the plasma generation state in the chamber changes. For example, when the focus ring 24 is dropped, the plasma does not converge on the semiconductor wafer, and when the rectifying exhaust ring 56 is dropped, the plasma diffuses from the space between the lower electrode 11 and the upper electrode 35. When the plasma generation state in the chamber changes, the light emission data of the dummy wafer also changes. Therefore, by monitoring the light emission data, it is possible to detect a change in the plasma generation state in the chamber and, in turn, a component mounting failure.

  FIG. 8 is a graph showing the relationship between component mounting failure and light emission data.

  In FIG. 8, the horizontal axis represents the dropped component, and the vertical axis represents the emission data (hereinafter referred to as “reference data”) and the component dropped in a state where all the components are normally attached (reference state). The ratio to the emission data (hereinafter referred to as “test data”) in the case of the above.

  First, the ratio between reference data and test data (hereinafter referred to as “light emission amount ratio”) will be described.

First, reference data is measured over a predetermined wavelength region, for example, 200 to 800 nm, and test data is also measured over a predetermined wavelength region, for example, 200 to 800 nm. Next, as shown in the following formula (1), the ratio A _{i of the} test data to the reference data is calculated for each wavelength i,
A _i = a _i (test data) / a _i (reference data) i = 200 to 800 nm (1)
Furthermore, an average value A _ave in the wavelength range i = 200 to 800 nm of the calculated A _i.

Next, as shown in the following formula (2), the absolute value of the difference between A _i and A _ave is calculated for each wavelength i, and the total sum B of the calculated absolute values of the difference is calculated. The calculated sum B corresponds to the light emission amount ratio in FIG.

  Next, threshold setting in FIG. 8 will be described.

First, n dummy wafers are prepared, and reference data is measured for each dummy wafer in the reference state. Then, from any two reference data (first reference data and second reference data) among the n reference data measured, two reference data for each wavelength i based on the above equation (1) The light emission amount ratio B _k is calculated based on the above formula (2). By repeating this n times, n light emission amount ratios B are calculated. Next, an average value (B _ave ) and standard deviation (B _sigma ) (σ) of n light emission amount ratios B are calculated, and a value obtained by adding 6σ to the average value of the light emission amount ratios B is set as an upper threshold (Reference value (max)), and a value obtained by subtracting 6σ from the average value of the light emission amount ratio B is set as the lower limit threshold (Reference value (min)).

  In FIG. 8, since the light emission amount ratio when the rectifying exhaust ring is dropped clearly exceeds the upper limit threshold value, the falling off of the rectifying exhaust ring 56 can be detected by monitoring the light emission data.

  According to the abnormality determination in step S33, the light emission data above the semiconductor wafer is used as measurement data for detecting a component attachment failure. The light emission data above the semiconductor wafer can be easily measured, and changes according to changes in the plasma generation state in the chamber 10, and in turn, depending on whether or not the components are dropped. Therefore, it is possible to reliably detect the dropout of the component parts in P / C2 without reliably reducing the operating rate of P / C2.

  Further, according to the abnormality determination in step S33, the light emission amount ratio is calculated from the light emission data. Since the light emission amount ratio is a dimensionless number, it is not affected by the magnitude of the absolute value. Therefore, it is possible to accurately detect the dropout of the component parts at P / C2.

  Next, a case will be described in which data relating to a high frequency power source (hereinafter referred to as “high frequency data”) is used as measurement data for detecting defective mounting of components.

  When a component attachment failure occurs in the chamber, the plasma generation state in the chamber changes. When the plasma generation state in the chamber changes, the high frequency power applied from the lower high frequency power supply 18 changes so as to maintain the plasma in a desired state. As a result, by monitoring high-frequency data, for example, voltage, current, phase, impedance, etc., it is possible to detect changes in the plasma generation status in the chamber, and in turn, defective component mounting.

  FIG. 9 is a graph showing the relationship between the component mounting failure and the high-frequency data.

  In FIG. 9, the horizontal axis represents the count of the number of dummy wafers to be etched (Wafer count), and the vertical axis represents the actual measurement value of the voltage applied to the chamber 10. Further, the names of the components shown in FIG. 9 are components removed from the chamber 10 in the count number.

  The reason why the measured value of the voltage fluctuates according to the number of counts is that the measured value of the voltage for each dummy wafer is plotted on a graph. The measured value of each voltage is an average value during the etching process for each dummy wafer. In addition, the average value of the actual measured value of the voltage is calculated, the standard deviation (σ) of the actual measured value of the voltage is calculated, and the value obtained by adding 6σ to the average value of the actual measured value of the voltage is set as the upper threshold (Reference value (max )), And a value obtained by subtracting 6σ from the average value of the actually measured voltage is set as the lower threshold (Reference value (min)).

  In FIG. 9, when the rectifying exhaust ring is dropped and when the cover ring and the focus ring are dropped, the actual measured value of the voltage clearly exceeds the upper limit threshold, and the measured voltage when the cover ring is dropped. Is clearly below the lower threshold, and by monitoring the voltage applied in the chamber 10, the rectifying exhaust ring 56 is dropped, the cover ring 14 and the focus ring 24 are dropped, and only the cover ring 14 is dropped. Can be detected.

  In FIG. 9 described above, the average value during the etching process for each dummy wafer is used as the actual measurement value of the voltage applied in the chamber 10, but a minimum value or a maximum value may be used. It is also possible to detect a dropout of components other than the parts.

  FIG. 10 is another graph showing the relationship between the component mounting failure and the high-frequency data.

  In FIG. 10, the horizontal axis represents the lot number for which the auto setup process is executed, and the vertical axis represents the actual measurement value of the voltage applied to the chamber 10.

  The actual voltage values fluctuate in each lot because 25 dummy wafers were etched in each lot and the actual voltage values for each lot in each lot were plotted on a graph. The measured value of each voltage is an average value during the etching process for each dummy wafer.

  The component mounting status in each lot is as shown in Table 2 below.

  For example, in the lot 11, the dummy wafer is subjected to the etching process in a state where the tightening torque of the screw for attaching the upper electrode 35 is reduced. Further, the reference for lot 1 or the like is a state in which all the component parts are normally attached, and a threshold for determining attachment failure of the component parts is set based on an actual measurement value of voltage in the lot. . In FIG. 10, the average value of the actual measurement values of the voltages in the lot in the reference state is calculated, and the standard deviation (σ) of the actual measurement values of these voltages is calculated, and 6σ is added to the average value of the actual measurement values of the voltage. The value is set to the upper threshold (Reference value (max)), and the value obtained by subtracting 6σ from the average value of the measured voltage is set to the lower threshold (Reference value (min)).

  In FIG. 10, since the measured value of the voltage when there is no heat-insulating focus ring back rubber clearly exceeds the upper threshold, the focus ring back rubber can be detected by monitoring the voltage applied in the chamber 10. The absence can be detected. That is, it is possible to detect a mounting failure of a component other than the component falling off.

  According to the abnormality determination in step S33, high-frequency data is used as measurement data for detecting a component attachment failure. The high-frequency data can be easily measured, and changes according to changes in the plasma generation status in the chamber 10, and in turn, due to defective mounting of the components. Therefore, it is possible to reliably detect a component attachment failure in P / C2 without reliably lowering the operation rate of P / C2.

  Further, in FIGS. 9 and 10 described above, the voltage applied in the chamber 10 is used as the high-frequency data. However, a current, phase, and impedance other than the voltage may be used.

  Further, detection of defective cleaning of component parts in the abnormality determination step will be described.

  When a cleaning failure of a component occurs in the chamber, the plasma generation state in the chamber becomes unstable due to the deposit. Therefore, when etching the dummy wafer, it is possible to detect defective cleaning of the component parts by monitoring the plasma generation state in the chamber. Here, the defective cleaning of the component parts indicates a state where deposits that could not be removed by wet cleaning or the like are still deposited on the surface of each component part.

  Hereinafter, the case where the light emission data above the semiconductor wafer is used as measurement data for detecting a cleaning failure of a component will be described.

  When a cleaning failure of a component occurs in the chamber, the plasma generation status in the chamber changes. When the plasma generation status in the chamber changes, the emission data of the dummy wafer also changes, so the component data can be monitored by monitoring the emission data. It is possible to detect poor cleaning.

  FIG. 11 is a graph showing the relationship between component cleaning defects and light emission data.

  In FIG. 11, the horizontal axis represents the count number of the number of dummy wafers to be etched, and the vertical axis represents the rate of change of the ratio of the light emission amount in the same dummy wafer. Also, the component names shown in FIG. 11 are components whose deposits are attached to the surface in the dummy wafer etching process corresponding to the count number.

  Here, the rate of change of the ratio of the light emission amount is a wavelength (for example, 656) at which the light emission amount changes sensitively according to the cleaning failure of the component in the light emission data measured over a predetermined wavelength region on the same dummy wafer. .5 nm) and the emission data at a wavelength (for example, 374 nm) at which the amount of emitted light does not change regardless of whether or not a component is poorly washed, the atmosphere above the dummy wafer starts emitting light. This corresponds to the rate of change of the ratio until 10 seconds elapse. The wavelength at which the amount of light emission changes sensitively according to poor cleaning of the component is 656.5 nm because the CF-based reaction product strongly emits light at a wavelength of 656.5 nm.

  As the threshold value in FIG. 11, an average value of the change rate of the light emission amount ratio when the component having the deposit attached to the surface is not arranged in the chamber 10 is calculated, and the change rate of the light emission amount ratio is calculated. The standard deviation (σ) is calculated, and a value obtained by subtracting 6σ from the average value of the change rate of the ratio of the light emission amount is set.

  In FIG. 11, the rate of change in the ratio of the amount of light emission when the deposit is attached to the surface of the upper electrode (CEL) and when the deposit is attached to the surface of the ESC is clearly below the threshold value. By monitoring the light emission data, it is possible to detect a cleaning failure of the upper electrode and a cleaning failure of the ESC.

  According to the abnormality determination in step S33, the light emission data above the semiconductor wafer is used as measurement data for detecting a component cleaning failure. The light emission data above the semiconductor wafer can be easily measured, and changes depending on the change in the plasma generation state in the chamber 10, and the presence or absence of the occurrence of defective cleaning of the component parts. Therefore, it is possible to reliably detect the cleaning failure of the component parts in the P / C 2 without reliably reducing the operation rate of the P / C 2.

  Further, according to the abnormality determination in step S33, the rate of change in the ratio of the light emission amounts is calculated over 10 seconds immediately after the light emission based on the light emission data. Since the CF-based reaction product reacts rapidly with oxygen gas or the like in the chamber 10 and changes to another product, light with a wavelength of 656.5 nm is rapidly attenuated. Therefore, by calculating the rate of change in the ratio of the luminescence amount, the presence of the CF-based reaction product can be reliably detected, and the defective cleaning of the component parts can be detected more reliably.

  Next, detection of a leak in the chamber 10 in the abnormality determination step will be described.

When a leak occurs in the chamber 10 and air flows into the chamber 10 from the outside, the light emission data of the dummy wafer subjected to the etching process increases the light emission amount due to the gas constituting the air. A leak check can be performed by monitoring the above. Specifically, a leak check can be performed by monitoring light emission data at a wavelength at which the amount of light emission changes sensitively according to the inflow of nitrogen (N ₂ ) gas, for example, among gases constituting air.

  When nitrogen gas flows into the chamber 10, the emission amount of the emission data with a wavelength of 745 nm increases significantly, whereas the emission amount of the emission data with a wavelength of 560 nm hardly changes. The ratio of the emission amount of the emission data at a wavelength of 745 nm to the emission amount of the emission data of 560 nm (hereinafter referred to as “emission ratio”) is calculated, and a leak check is performed based on a comparison between the calculated emission ratio and a threshold value described later. Do.

  FIG. 14 is a graph showing the relationship between the leak rate of the chamber and the light emission ratio.

  In FIG. 14, the horizontal axis represents the leak rate as the leak amount of the chamber 10, and the vertical axis represents the light emission ratio (Intensity ratio). Further, as the threshold value, an average value of the light emission ratio of the chamber 10 in a normal state is calculated, and further, a standard deviation (σ) of the light emission ratio is calculated, and the average value of the light emission ratio of the chamber 10 in a normal state is calculated as 6σ. A value obtained by adding is used. Furthermore, the points in the figure are the actual values of the light emission ratio when a predetermined amount of leak occurs, and the alternate long and short dash line shows the relationship between the leak rate and the light emission ratio predicted based on the actual value of the light emission ratio.

  In FIG. 14, since the leak rate when the alternate long and short dash line reaches the threshold is 0.05 Pa / min (0.4 mT / min), the allowable value of leak is 0.13 Pa / min (1.0 mT / min). ) The presence or absence of the above leak can be detected.

  According to the abnormality determination in step S33, the light emission ratio in the emission data of the dummy wafer to be etched, that is, the ratio of the emission amount of the emission data of the wavelength 745 nm to the emission amount of the emission data of the wavelength 560 nm is determined. The presence or absence of a leak is detected. When a leak occurs in the chamber 10, nitrogen gas flows in from the outside, and the amount of light emitted from the nitrogen gas increases. Further, since the light emission ratio is a dimensionless number, it is not affected by the magnitude of the absolute value. Therefore, the leak check can be performed more accurately.

  As described above, according to the process of FIG. 3, in the abnormality determination, at least one data among the data such as the apparatus log and the measurement data that changes in accordance with the state change in the chamber 10 is measured, and the measurement is performed. And the reference data in a normal state corresponding to the measured data. Therefore, in order to perform abnormality determination based on at least one of the data that changes according to the state change in the chamber 10 without using the results of multivariate analysis of the data measured in the abnormality determination and the reference data, P / C2 abnormality determination can be performed accurately. Moreover, since it is not necessary to reset the normal model every time maintenance is performed, the operation rate of the P / C 2 is not reduced.

  Next, the seasoning step of step S34 will be described.

  In seasoning in the conventional return processing, whether or not the atmosphere in the chamber 10 matches a predetermined processing condition defined in a predetermined recipe, that is, whether or not seasoning is completed, is a predetermined number of dummy wafers, for example, Since the determination was made based on whether or not the 50 dummy wafers were subjected to the etching process, useless etching process occurred, and as a result, seasoning took time.

  On the other hand, in step S34, the light emission data is monitored. When the atmosphere in the chamber 10 is stabilized in accordance with a predetermined processing condition defined in a predetermined recipe, the plasma generation state in the chamber is stabilized, and the light emission state in the atmosphere above the dummy wafer is also stabilized. By doing so, the end of seasoning can be determined. Specifically, if the difference between the light emission data of the two dummy wafers that are successively subjected to the etching process becomes small, it can be determined that the atmosphere in the chamber 10 is stable and seasoning is completed.

  FIG. 12 is a diagram showing PDC (Posterior Data Calibration) data as light emission data used in seasoning.

  In FIG. 12, first, PDC data is obtained from the light emission data L (n) of the nth dummy wafer and the (n−1) th sheet over a predetermined wavelength region for two dummy wafers that are successively etched. The light emission data L (n-1) of the dummy wafer is measured, and the absolute value of the light emission data difference at each wavelength is integrated over a predetermined wavelength region, for example, i = 200 to 800 nm, according to the following formula (3). Is calculated by

  Further, in step S34, in order to remove the influence of the amount of light emission from the PDC data, the PDC data is differentiated, and it is determined whether seasoning is completed based on the differentiated value (PDC differentiated value) of the PDC data. To do. Specifically, the seasoning end point is the time when the differential value of the PDC data first changes from negative to positive during seasoning.

  FIG. 13 is a graph showing the relationship between the differential value of the PDC data and the etching rate.

  In FIG. 13, the horizontal axis represents the number of processed dummy wafers in seasoning, the left vertical axis represents the differential value of the PDC data, and the right vertical axis represents the etching rate.

  As shown in FIG. 13, when six dummy wafers are processed in seasoning, the etching rate is stabilized, that is, the atmosphere in the chamber 10 is stabilized. However, as shown by the arrows in FIG. In the process, the differential value of the PDC data changes from negative to positive for the first time. Therefore, based on the differential value of the PDC data, it can be determined whether or not the atmosphere in the chamber 10 has been stabilized, and in other words, whether or not seasoning has been completed.

  According to the seasoning step of step S34, it is determined whether seasoning is completed based on the difference (PDC data) between the light emission data of the two dummy wafers that are successively subjected to the etching process. When the plasma generation state in the chamber is stabilized, the emission data of the dummy wafer is also stabilized, and the difference between the emission data of the two dummy wafers is reduced. Therefore, the end of seasoning can be easily determined.

  Further, according to the seasoning step of step S34, a differential value of the PDC data is calculated, and it is determined whether seasoning is completed based on the differential value. The differential value of PDC data is not affected by the amount of light emission. Therefore, the end of seasoning can be determined more accurately.

  In addition, an object of the present invention is to supply a storage medium (or recording medium) that records a program code of software that realizes the functions of the above-described embodiments to an APC server or the like, and a control device that the APC server or the like has, for example Needless to say, this can also be achieved by a computer (or CPU or MPU) or a control device connected to the APC server reading and executing the program code stored in the storage medium.

  Further, by executing the program code read by the computer or the like, not only the functions of the above-described embodiments are realized, but also an operating system (OS) operating on the computer or the like based on the instruction of the program code. Needless to say, a case where the functions of the above-described embodiment are realized by performing part or all of the actual processing and the processing is included.

  Further, after the program code read from the storage medium is written in a function expansion card inserted into the computer or APC server or a memory provided in a function expansion unit connected to the computer or APC server, the program code instruction It is needless to say that the functions of the above-described embodiment are realized by the CPU or the like provided in the function expansion card or function expansion unit performing part or all of the actual processing based on the processing. Absent.

  The program code only needs to be able to realize the functions of the above-described embodiments by a computer or an APC server. The form includes object code, program code executed by an interpreter, script data supplied to the OS, and the like. It may have the form.

  As a recording medium for supplying the program code, for example, RAM, NV-RAM, floppy (registered trademark) disk, hard disk, optical disk, magneto-optical disk, CD-ROM, MO, CD-R, CD-RW, DVD (DVD -ROM, DVD-RAM, DVD-RW, DVD + RW), magnetic tape, nonvolatile memory card, other ROM, etc., as long as they can store the program code. Alternatively, the program code may be supplied by downloading from another computer or database (not shown) connected to the Internet, a commercial network, a local area network, or the like.

  In the above-described embodiment, the APC server collects device logs and measurement data recorded in the control unit 57. As described above, the plasma generation state in the chamber also changes depending on the type of P / C. However, apparatus logs and measurement data that are closely related to the plasma generation state in the chamber differ depending on the type of P / C.

  Correspondingly, in the present invention, various P / C control units have a list of device logs and measurement data that are closely related to the plasma generation status, and the various P / Cs are connected to the APC server. In this case, the APC server may receive the list and collect device logs and measurement data based on the list. As a result, the APC server does not collect unnecessary device logs and measurement data, and can quickly execute the auto setup process. In addition, since it is not necessary for the APC server to manage the list, the burden on the APC server can be reduced.

  In the embodiment described above, component attachment failure or component cleaning failure was detected in the abnormality determination of the auto setup process, but the detected abnormal state is not limited to these, for example, abnormal discharge in the chamber 10 The occurrence or non-occurrence of heat transfer gas leakage from between the semiconductor wafer and the ESC 20 may be detected.

  In the above-described embodiment, the case where the substrate processing apparatus is an etching processing apparatus has been described. However, the substrate processing apparatus to which the present invention can be applied is not limited to this. For example, a coating and developing apparatus, a substrate cleaning apparatus, a heat treatment apparatus, An etching apparatus or the like may be used, and it is not necessary to have both an upper electrode and a lower electrode.

  In the above-described embodiment, the substrate to be processed is a semiconductor wafer. However, the substrate to be processed is not limited to this. For example, a glass substrate such as an LCD (Liquid Crystal Display) or an FPD (Flat Panel Display). It may be.

It is sectional drawing which shows schematic structure of the process chamber as a substrate processing apparatus which concerns on this Embodiment. It is a figure which shows the assembly | attachment condition of the component in the process chamber of FIG. It is a flowchart of the auto setup process as a return method of the substrate processing apparatus which concerns on this Embodiment. It is a graph which compares the vacuuming time in the auto setup process of FIG. 3, and the conventional reset process. It is a graph which shows the relationship between the attachment defect of a component, and the impedance of a lower matching device. It is a graph which shows the relationship between the attachment defect of a component, and the voltage between a lower electrode and a lower matching device. It is a graph which shows the relationship between the attachment failure of a component, and the valve opening degree of APC. It is a graph which shows the relationship between the attachment defect of a component, and light emission data. It is a graph which shows the relationship between the attachment defect of a component, and high frequency data. It is another graph which shows the relationship between the attachment defect of a component, and high frequency data. It is a graph which shows the relationship between the washing | cleaning defect of a component, and light emission data. It is a figure which shows the PDC data as the light emission data used by seasoning. It is a graph which shows the relationship between the differential value of PDC data, and an etching rate. It is a graph which shows the relationship between the leak rate of a chamber, and light emission ratio.

Explanation of symbols

2 Process chamber (P / C)
10 Chamber 11 Lower electrode 12 Exhaust passage 13 Baffle plate 14 Cover ring 15 Support 16 Bellows cover 17 Upper high frequency power supply 18 Lower high frequency power supply 19 Lower matching unit 20 ESC
21 Upper matching unit 24 Focus ring 25 Refrigerant chamber 26 Pipe 33 Shower head 34 Gas vent hole 35 Upper electrode 36 Electrode support 37 Buffer chamber 38 Process gas introduction pipe 40 Process gas supply device 41 Valve 42 Silicon tetrafluoride supply unit 43 Four Silicon hydride supply unit 44 Oxygen gas supply unit 45 Argon gas supply unit 46, 47, 48, 49 MFC
50, 51 Transmission window 52 Light source 53 Light receiving sensor 54 Holder 55 Shield ring 56 Rectification exhaust ring 57 Control unit 58 Screw cover

Claims (16)

A return method of a substrate processing apparatus having a container chamber,
A vacuuming step for evacuating the container chamber, a temperature setting step for setting a temperature in the container chamber, an abnormality determining step for determining presence / absence of abnormality in the container chamber, and an atmosphere in the container chamber with predetermined processing conditions And a seasoning step that stabilizes to match
In the temperature setting step, mass production of the substrate, which is a conventional return processing of the substrate, which is a dedicated processing condition for increasing the etching rate while ensuring the minimum required etching accuracy , in the temperature setting step. Set to a temperature different from the temperature in the container chamber during processing,
The abnormality determination step measures at least one data among data that changes in accordance with a change in state in the container chamber, and the measured data and a normal state in the container chamber corresponding to the measured data A method for returning a substrate processing apparatus, comprising comparing with reference data in the method.   2. The method of returning a substrate processing apparatus according to claim 1, wherein in the abnormality determination step, a processing gas that does not generate a reaction product is caused to flow into the container chamber when processing the substrate.   3. The method of returning a substrate processing apparatus according to claim 2, wherein the processing gas is a gas composed of only oxygen.   The method of returning a substrate processing apparatus according to claim 1, wherein the measured data is a log indicating a state of each component of the substrate processing apparatus.   5. The method for returning a substrate processing apparatus according to claim 4, wherein the log is an impedance of a matching unit that matches high-frequency power applied to a lower electrode disposed in the container chamber.   5. The method of returning a substrate processing apparatus according to claim 4, wherein the log is a voltage between a lower electrode disposed in the container chamber and a matching unit that matches high-frequency power applied to the lower electrode.   5. The method for returning a substrate processing apparatus according to claim 4, wherein the log is an opening degree of a control valve that controls a pressure in the container chamber.   4. The method for returning a substrate processing apparatus according to claim 1, wherein the measured data is light emission data of the substrate to be processed.   9. The method of returning a substrate processing apparatus according to claim 8, wherein the light emission data is a ratio of light emission amounts.   4. The substrate processing according to claim 1, wherein the measured data is data relating to a high-frequency power source that supplies a high-frequency power to be applied to a lower electrode disposed in the container chamber. 5. How to restore the device.   The substrate according to any one of claims 1 to 10, wherein the evacuation step is performed by setting a temperature in the container chamber to be higher than a temperature in the container chamber in a mass production process of the substrate. Method for returning the processing device.   The said seasoning step detects stability of the atmosphere in the said container room | chamber based on the difference of the light emission data of the said 2 board | substrate with which the process was performed continuously. A method for returning the substrate processing apparatus according to the item.   13. The method for returning a substrate processing apparatus according to claim 12, wherein in the seasoning step, the stability of the atmosphere in the container chamber is detected based on a differential value of the difference between the light emission data.   14. The abnormality determination step according to claim 1, wherein leakage of the container chamber is detected based on a ratio of light emission amounts of different wavelengths in light emission of the substrate to be processed. A method for returning a substrate processing apparatus according to the description. A return program for a substrate processing apparatus for causing a computer to execute a return method for a substrate processing apparatus having a container chamber,
The return method includes a evacuation step for evacuating the container chamber, a temperature setting step for setting a temperature in the container chamber, an abnormality determination step for determining presence / absence of an abnormality in the container chamber, and an atmosphere in the container chamber And a seasoning step that stabilizes to meet predetermined processing conditions,
In the temperature setting step, mass production of the substrate, which is a conventional return processing of the substrate, which is a dedicated processing condition for increasing the etching rate while ensuring the minimum required etching accuracy , in the temperature setting step. Set to a temperature different from the temperature in the container chamber during processing,
In the abnormality determination step, at least one data is measured out of data that changes in response to a change in state in the container chamber, and the measured data and a normal state in the container chamber corresponding to the measured data A return program for a substrate processing apparatus, wherein the return data is compared with the reference data. A substrate processing apparatus having a container chamber,
A vacuum evacuating means for evacuating the container chamber, a temperature setting means for setting a temperature in the container chamber, an abnormality determining means for determining presence / absence of an abnormality in the container chamber, and an atmosphere in the container chamber with predetermined processing conditions And seasoning means for stabilizing to match
The temperature setting means secures the temperature in the container chamber to the minimum required etching accuracy after the inside of the container is evacuated by the evacuating means and before the abnormality determining means determines the presence or absence of abnormality. However, the temperature is set to a temperature different from the temperature in the container chamber in the mass production process of the substrate, which is a conventional return process of the substrate, which is a dedicated process condition for increasing the etch rate .
The abnormality determination means measures at least one data among data that changes in response to a change in state in the container chamber, and the measured data and a normal state in the container chamber corresponding to the measured data A substrate processing apparatus for comparing with reference data in the above.

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