TW201129884A - Methods and arrangements for in-situ process monitoring and control for plasma processing tools - Google Patents

Methods and arrangements for in-situ process monitoring and control for plasma processing tools

Info

Publication number
TW201129884A
TW201129884A TW099121516A TW99121516A TW201129884A TW 201129884 A TW201129884 A TW 201129884A TW 099121516 A TW099121516 A TW 099121516A TW 99121516 A TW99121516 A TW 99121516A TW 201129884 A TW201129884 A TW 201129884A
Authority
TW
Taiwan
Prior art keywords
sensor data
arrangement
control
arrangements
methods
Prior art date
Application number
TW099121516A
Other languages
Chinese (zh)
Other versions
TWI509375B (en
Inventor
Vijayakumar C Venugopal
Neil Martin Paul Benjamin
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of TW201129884A publication Critical patent/TW201129884A/en
Application granted granted Critical
Publication of TWI509375B publication Critical patent/TWI509375B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Abstract

An arrangement for implementing an automatic in-situ process control scheme during execution of a recipe is provided. The arrangement includes control-loop sensors configured at least for collecting a first set of sensor data to facilitate monitoring set points during the recipe execution, wherein the control-loop sensors being part of a process control loop. The arrangement also includes independent sensors configured at least for collecting a second set of sensor data, which is not part of the process control loop. The arrangement yet also includes a hub configured for at least receiving at least one of the first set of sensor data and the second set of sensor data. The arrangement yet further includes an analysis computer communicably coupled with the hub and configured for performing analysis of at least one of the first set of sensor data and the second set of sensor data.
TW099121516A 2009-06-30 2010-06-30 Methods and arrangements for implementing automatic in-situ process control scheme during execution of recipe TWI509375B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US22202409P 2009-06-30 2009-06-30
US22210209P 2009-06-30 2009-06-30

Publications (2)

Publication Number Publication Date
TW201129884A true TW201129884A (en) 2011-09-01
TWI509375B TWI509375B (en) 2015-11-21

Family

ID=43411705

Family Applications (5)

Application Number Title Priority Date Filing Date
TW099121515A TWI484435B (en) 2009-06-30 2010-06-30 Methods and apparatus to predict etch rate uniformity for qualification of a plasma chamber
TW099121513A TWI495970B (en) 2009-06-30 2010-06-30 Method and arrangement for detecting in-situ fast transient event
TW099121511A TWI480917B (en) 2009-06-30 2010-06-30 Methods for constructing an optimal endpoint algorithm
TW099121519A TWI536193B (en) 2009-06-30 2010-06-30 Methods and apparatus for predictive preventive maintenance of processing chambers
TW099121516A TWI509375B (en) 2009-06-30 2010-06-30 Methods and arrangements for implementing automatic in-situ process control scheme during execution of recipe

Family Applications Before (4)

Application Number Title Priority Date Filing Date
TW099121515A TWI484435B (en) 2009-06-30 2010-06-30 Methods and apparatus to predict etch rate uniformity for qualification of a plasma chamber
TW099121513A TWI495970B (en) 2009-06-30 2010-06-30 Method and arrangement for detecting in-situ fast transient event
TW099121511A TWI480917B (en) 2009-06-30 2010-06-30 Methods for constructing an optimal endpoint algorithm
TW099121519A TWI536193B (en) 2009-06-30 2010-06-30 Methods and apparatus for predictive preventive maintenance of processing chambers

Country Status (6)

Country Link
JP (5) JP2012532464A (en)
KR (5) KR101741274B1 (en)
CN (5) CN102804929B (en)
SG (5) SG176147A1 (en)
TW (5) TWI484435B (en)
WO (5) WO2011002804A2 (en)

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US10748748B2 (en) 2012-02-22 2020-08-18 Lam Research Corporation RF impedance model based fault detection
TWI768386B (en) * 2019-06-24 2022-06-21 德商Ｓｍｓ集團有限公司 Industrial plant, particularly plant of the metal-producing industry or the aluminium or steel industry, and method of operating an industrial plant, particularly plant of the metal-producing industry or the aluminium or steel industry

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Publication number Priority date Publication date Assignee Title
US10748748B2 (en) 2012-02-22 2020-08-18 Lam Research Corporation RF impedance model based fault detection
TWI677264B (en) * 2013-12-13 2019-11-11 美商蘭姆研究公司 Rf impedance model based fault detection
TWI768386B (en) * 2019-06-24 2022-06-21 德商Ｓｍｓ集團有限公司 Industrial plant, particularly plant of the metal-producing industry or the aluminium or steel industry, and method of operating an industrial plant, particularly plant of the metal-producing industry or the aluminium or steel industry

Also Published As

Publication number Publication date
CN102473631A (en) 2012-05-23
TWI536193B (en) 2016-06-01
JP2012532461A (en) 2012-12-13
SG176566A1 (en) 2012-01-30
CN102473590B (en) 2014-11-26
KR20120047871A (en) 2012-05-14
JP2012532460A (en) 2012-12-13
WO2011002800A3 (en) 2011-04-07
CN102474968A (en) 2012-05-23
WO2011002800A2 (en) 2011-01-06
CN102473590A (en) 2012-05-23
SG176565A1 (en) 2012-01-30
TWI480917B (en) 2015-04-11
CN102804929A (en) 2012-11-28
KR20120037421A (en) 2012-04-19
TW201115288A (en) 2011-05-01
WO2011002810A2 (en) 2011-01-06
TWI484435B (en) 2015-05-11
TWI509375B (en) 2015-11-21
JP5599882B2 (en) 2014-10-01
WO2011002810A3 (en) 2011-04-14
SG176564A1 (en) 2012-01-30
TW201112302A (en) 2011-04-01
JP5629770B2 (en) 2014-11-26
TW201129936A (en) 2011-09-01
CN102474968B (en) 2015-09-02
WO2011002803A2 (en) 2011-01-06
TW201108022A (en) 2011-03-01
KR101741274B1 (en) 2017-05-29
JP2012532462A (en) 2012-12-13
JP2012532463A (en) 2012-12-13
KR101741271B1 (en) 2017-05-29
KR20120037420A (en) 2012-04-19
WO2011002810A4 (en) 2011-06-03
KR101708078B1 (en) 2017-02-17
KR101741272B1 (en) 2017-05-29
CN102804353B (en) 2015-04-15
JP5624618B2 (en) 2014-11-12
WO2011002811A3 (en) 2011-02-24
WO2011002804A2 (en) 2011-01-06
SG176567A1 (en) 2012-01-30
TWI495970B (en) 2015-08-11
SG176147A1 (en) 2011-12-29
JP5693573B2 (en) 2015-04-01
WO2011002804A3 (en) 2011-03-03
CN102804929B (en) 2015-11-25
WO2011002811A2 (en) 2011-01-06
KR20120037419A (en) 2012-04-19
JP2012532464A (en) 2012-12-13
CN102804353A (en) 2012-11-28
KR101708077B1 (en) 2017-02-17
KR20120101293A (en) 2012-09-13
CN102473631B (en) 2014-11-26
WO2011002803A3 (en) 2011-03-03

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