WO2011002804A3 - Methods and apparatus to predict etch rate uniformity for qualification of a plasma chamber - Google Patents

Methods and apparatus to predict etch rate uniformity for qualification of a plasma chamber Download PDF

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Publication number
WO2011002804A3
WO2011002804A3 PCT/US2010/040468 US2010040468W WO2011002804A3 WO 2011002804 A3 WO2011002804 A3 WO 2011002804A3 US 2010040468 W US2010040468 W US 2010040468W WO 2011002804 A3 WO2011002804 A3 WO 2011002804A3
Authority
WO
WIPO (PCT)
Prior art keywords
data
processing
etch rate
predictive model
health check
Prior art date
Application number
PCT/US2010/040468
Other languages
French (fr)
Other versions
WO2011002804A2 (en
Inventor
Brian D. Choi
Gunsu Yun
Vijayakumar C. Venugopal
Original Assignee
Lam Research Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/555,674 external-priority patent/US8983631B2/en
Application filed by Lam Research Corporation filed Critical Lam Research Corporation
Priority to CN201080029270.5A priority Critical patent/CN102474968B/en
Priority to JP2012518586A priority patent/JP5629770B2/en
Priority to SG2011085131A priority patent/SG176565A1/en
Priority to KR1020117031573A priority patent/KR101708078B1/en
Publication of WO2011002804A2 publication Critical patent/WO2011002804A2/en
Publication of WO2011002804A3 publication Critical patent/WO2011002804A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Testing And Monitoring For Control Systems (AREA)
  • Chemical Vapour Deposition (AREA)
  • General Factory Administration (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Management, Administration, Business Operations System, And Electronic Commerce (AREA)
  • Arrangements For Transmission Of Measured Signals (AREA)
  • Complex Calculations (AREA)
  • Combined Controls Of Internal Combustion Engines (AREA)
  • Plasma Technology (AREA)
  • Indication And Recording Devices For Special Purposes And Tariff Metering Devices (AREA)
  • Information Retrieval, Db Structures And Fs Structures Therefor (AREA)

Abstract

A method for predicting etch rate uniformity for qualifying health status of a processing chamber during substrate processing of substrates is provided. The method includes executing a recipe and receiving processing data from a first set of sensors. The method further includes analyzing the processing data utilizing a subsystem health check predictive model to determine calculated data, which includes at least one of etch rate data and uniformity data. The subsystem health check predictive model is constructed by correlating measurement data from a set of film substrates with processing data collected during analogous processing of a set of non-film substrates. The method yet also includes performing a comparison of the calculated data against a set of control limits as defined by the subsystem health check predictive model. The method yet further includes generating a warning if the calculated data is outside of the set of control limits.
PCT/US2010/040468 2009-06-30 2010-06-29 Methods and apparatus to predict etch rate uniformity for qualification of a plasma chamber WO2011002804A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN201080029270.5A CN102474968B (en) 2009-06-30 2010-06-29 Prediction etching rate uniformity is to evaluate and test the method and apparatus in correcting plasma chamber
JP2012518586A JP5629770B2 (en) 2009-06-30 2010-06-29 Method, apparatus and program storage medium for predicting etch rate uniformity for plasma chamber verification
SG2011085131A SG176565A1 (en) 2009-06-30 2010-06-29 Methods and apparatus to predict etch rate uniformity for qualification of a plasma chamber
KR1020117031573A KR101708078B1 (en) 2009-06-30 2010-06-29 Methods and apparatus to predict etch rate uniformity for qualification of a plasma chamber

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US22202409P 2009-06-30 2009-06-30
US22210209P 2009-06-30 2009-06-30
US61/222,102 2009-06-30
US61/222,024 2009-06-30
US12/555,674 US8983631B2 (en) 2009-06-30 2009-09-08 Arrangement for identifying uncontrolled events at the process module level and methods thereof
US12/555,674 2009-09-08

Publications (2)

Publication Number Publication Date
WO2011002804A2 WO2011002804A2 (en) 2011-01-06
WO2011002804A3 true WO2011002804A3 (en) 2011-03-03

Family

ID=43411705

Family Applications (5)

Application Number Title Priority Date Filing Date
PCT/US2010/040456 WO2011002800A2 (en) 2009-06-30 2010-06-29 Methods and arrangements for in-situ process monitoring and control for plasma processing tools
PCT/US2010/040465 WO2011002803A2 (en) 2009-06-30 2010-06-29 Methods and apparatus for predictive preventive maintenance of processing chambers
PCT/US2010/040468 WO2011002804A2 (en) 2009-06-30 2010-06-29 Methods and apparatus to predict etch rate uniformity for qualification of a plasma chamber
PCT/US2010/040477 WO2011002810A2 (en) 2009-06-30 2010-06-29 Methods for constructing an optimal endpoint algorithm
PCT/US2010/040478 WO2011002811A2 (en) 2009-06-30 2010-06-29 Arrangement for identifying uncontrolled events at the process module level and methods thereof

Family Applications Before (2)

Application Number Title Priority Date Filing Date
PCT/US2010/040456 WO2011002800A2 (en) 2009-06-30 2010-06-29 Methods and arrangements for in-situ process monitoring and control for plasma processing tools
PCT/US2010/040465 WO2011002803A2 (en) 2009-06-30 2010-06-29 Methods and apparatus for predictive preventive maintenance of processing chambers

Family Applications After (2)

Application Number Title Priority Date Filing Date
PCT/US2010/040477 WO2011002810A2 (en) 2009-06-30 2010-06-29 Methods for constructing an optimal endpoint algorithm
PCT/US2010/040478 WO2011002811A2 (en) 2009-06-30 2010-06-29 Arrangement for identifying uncontrolled events at the process module level and methods thereof

Country Status (6)

Country Link
JP (5) JP5624618B2 (en)
KR (5) KR101708077B1 (en)
CN (5) CN102804353B (en)
SG (5) SG176147A1 (en)
TW (5) TWI495970B (en)
WO (5) WO2011002800A2 (en)

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US9502221B2 (en) * 2013-07-26 2016-11-22 Lam Research Corporation Etch rate modeling and use thereof with multiple parameters for in-chamber and chamber-to-chamber matching
TWI677264B (en) * 2013-12-13 2019-11-11 美商蘭姆研究公司 Rf impedance model based fault detection
US10192763B2 (en) * 2015-10-05 2019-01-29 Applied Materials, Inc. Methodology for chamber performance matching for semiconductor equipment
US10269545B2 (en) * 2016-08-03 2019-04-23 Lam Research Corporation Methods for monitoring plasma processing systems for advanced process and tool control
US9972478B2 (en) * 2016-09-16 2018-05-15 Lam Research Corporation Method and process of implementing machine learning in complex multivariate wafer processing equipment
US11067515B2 (en) * 2017-11-28 2021-07-20 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus and method for inspecting a wafer process chamber
CN108847381A (en) * 2018-05-25 2018-11-20 深圳市华星光电半导体显示技术有限公司 The method for testing substrate and extended testing system substrate service life
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US20230260767A1 (en) * 2022-02-15 2023-08-17 Applied Materials, Inc. Process control knob estimation

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Also Published As

Publication number Publication date
WO2011002811A2 (en) 2011-01-06
CN102804929B (en) 2015-11-25
KR20120101293A (en) 2012-09-13
CN102474968A (en) 2012-05-23
SG176147A1 (en) 2011-12-29
TW201129884A (en) 2011-09-01
SG176565A1 (en) 2012-01-30
JP2012532464A (en) 2012-12-13
WO2011002803A2 (en) 2011-01-06
TW201112302A (en) 2011-04-01
KR20120037419A (en) 2012-04-19
CN102804929A (en) 2012-11-28
TWI509375B (en) 2015-11-21
CN102804353A (en) 2012-11-28
KR20120047871A (en) 2012-05-14
KR101741271B1 (en) 2017-05-29
JP2012532462A (en) 2012-12-13
WO2011002810A3 (en) 2011-04-14
JP5629770B2 (en) 2014-11-26
WO2011002800A3 (en) 2011-04-07
TW201115288A (en) 2011-05-01
KR20120037421A (en) 2012-04-19
SG176567A1 (en) 2012-01-30
KR101708077B1 (en) 2017-02-17
JP5624618B2 (en) 2014-11-12
WO2011002810A4 (en) 2011-06-03
JP5693573B2 (en) 2015-04-01
CN102804353B (en) 2015-04-15
CN102473590B (en) 2014-11-26
TWI480917B (en) 2015-04-11
TW201108022A (en) 2011-03-01
TW201129936A (en) 2011-09-01
JP2012532461A (en) 2012-12-13
WO2011002803A3 (en) 2011-03-03
JP2012532463A (en) 2012-12-13
TWI495970B (en) 2015-08-11
KR101741272B1 (en) 2017-05-29
WO2011002811A3 (en) 2011-02-24
SG176564A1 (en) 2012-01-30
KR101708078B1 (en) 2017-02-17
CN102473631B (en) 2014-11-26
WO2011002810A2 (en) 2011-01-06
CN102473631A (en) 2012-05-23
JP2012532460A (en) 2012-12-13
TWI484435B (en) 2015-05-11
KR20120037420A (en) 2012-04-19
CN102474968B (en) 2015-09-02
JP5599882B2 (en) 2014-10-01
KR101741274B1 (en) 2017-05-29
WO2011002800A2 (en) 2011-01-06
TWI536193B (en) 2016-06-01
SG176566A1 (en) 2012-01-30
WO2011002804A2 (en) 2011-01-06
CN102473590A (en) 2012-05-23

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