SG176147A1 - Methods and arrangements for in-situ process monitoring and control for plasma processing tools - Google Patents
Methods and arrangements for in-situ process monitoring and control for plasma processing tools Download PDFInfo
- Publication number
- SG176147A1 SG176147A1 SG2011085107A SG2011085107A SG176147A1 SG 176147 A1 SG176147 A1 SG 176147A1 SG 2011085107 A SG2011085107 A SG 2011085107A SG 2011085107 A SG2011085107 A SG 2011085107A SG 176147 A1 SG176147 A1 SG 176147A1
- Authority
- SG
- Singapore
- Prior art keywords
- sensors
- recipe
- data
- virtual
- sensor
- Prior art date
Links
- 238000011065 in-situ storage Methods 0.000 title claims abstract description 18
- 238000012544 monitoring process Methods 0.000 title claims abstract description 6
- 238000000034 method Methods 0.000 title claims description 75
- 238000012545 processing Methods 0.000 title claims description 65
- 230000008569 process Effects 0.000 title claims description 52
- 238000004458 analytical method Methods 0.000 claims abstract description 42
- 238000004886 process control Methods 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims description 52
- 238000005259 measurement Methods 0.000 claims description 32
- 238000004519 manufacturing process Methods 0.000 claims description 18
- 230000004907 flux Effects 0.000 claims description 10
- 238000001514 detection method Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 3
- 238000004891 communication Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 7
- 238000007781 pre-processing Methods 0.000 description 7
- 230000001419 dependent effect Effects 0.000 description 4
- 230000004075 alteration Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000009530 blood pressure measurement Methods 0.000 description 2
- 238000012512 characterization method Methods 0.000 description 2
- 230000002860 competitive effect Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 241001125929 Trisopterus luscus Species 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000011847 diagnostic investigation Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000013072 incoming material Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000007619 statistical method Methods 0.000 description 1
- 238000010200 validation analysis Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/3299—Feedback systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US22202409P | 2009-06-30 | 2009-06-30 | |
| US22210209P | 2009-06-30 | 2009-06-30 | |
| US12/555,674 US8983631B2 (en) | 2009-06-30 | 2009-09-08 | Arrangement for identifying uncontrolled events at the process module level and methods thereof |
| PCT/US2010/040456 WO2011002800A2 (en) | 2009-06-30 | 2010-06-29 | Methods and arrangements for in-situ process monitoring and control for plasma processing tools |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG176147A1 true SG176147A1 (en) | 2011-12-29 |
Family
ID=43411705
Family Applications (5)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG2011085107A SG176147A1 (en) | 2009-06-30 | 2010-06-29 | Methods and arrangements for in-situ process monitoring and control for plasma processing tools |
| SG2011085115A SG176564A1 (en) | 2009-06-30 | 2010-06-29 | Methods and apparatus for predictive preventive maintenance of processing chambers |
| SG2011085172A SG176567A1 (en) | 2009-06-30 | 2010-06-29 | Arrangement for identifying uncontrolled events at the process module level and methods thereof |
| SG2011085149A SG176566A1 (en) | 2009-06-30 | 2010-06-29 | Methods for constructing an optimal endpoint algorithm |
| SG2011085131A SG176565A1 (en) | 2009-06-30 | 2010-06-29 | Methods and apparatus to predict etch rate uniformity for qualification of a plasma chamber |
Family Applications After (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG2011085115A SG176564A1 (en) | 2009-06-30 | 2010-06-29 | Methods and apparatus for predictive preventive maintenance of processing chambers |
| SG2011085172A SG176567A1 (en) | 2009-06-30 | 2010-06-29 | Arrangement for identifying uncontrolled events at the process module level and methods thereof |
| SG2011085149A SG176566A1 (en) | 2009-06-30 | 2010-06-29 | Methods for constructing an optimal endpoint algorithm |
| SG2011085131A SG176565A1 (en) | 2009-06-30 | 2010-06-29 | Methods and apparatus to predict etch rate uniformity for qualification of a plasma chamber |
Country Status (6)
| Country | Link |
|---|---|
| JP (5) | JP5629770B2 (ko) |
| KR (5) | KR101741271B1 (ko) |
| CN (5) | CN102804353B (ko) |
| SG (5) | SG176147A1 (ko) |
| TW (5) | TWI536193B (ko) |
| WO (5) | WO2011002804A2 (ko) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102332383B (zh) * | 2011-09-23 | 2014-12-10 | 中微半导体设备(上海)有限公司 | 等离子体刻蚀工艺的终点监控方法 |
| US10128090B2 (en) | 2012-02-22 | 2018-11-13 | Lam Research Corporation | RF impedance model based fault detection |
| US9502221B2 (en) | 2013-07-26 | 2016-11-22 | Lam Research Corporation | Etch rate modeling and use thereof with multiple parameters for in-chamber and chamber-to-chamber matching |
| CN104730372B (zh) * | 2013-12-13 | 2018-08-10 | 朗姆研究公司 | 基于rf阻抗模型的故障检测 |
| US10192763B2 (en) * | 2015-10-05 | 2019-01-29 | Applied Materials, Inc. | Methodology for chamber performance matching for semiconductor equipment |
| US10269545B2 (en) * | 2016-08-03 | 2019-04-23 | Lam Research Corporation | Methods for monitoring plasma processing systems for advanced process and tool control |
| US9972478B2 (en) * | 2016-09-16 | 2018-05-15 | Lam Research Corporation | Method and process of implementing machine learning in complex multivariate wafer processing equipment |
| US11067515B2 (en) * | 2017-11-28 | 2021-07-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus and method for inspecting a wafer process chamber |
| CN108847381A (zh) * | 2018-05-25 | 2018-11-20 | 深圳市华星光电半导体显示技术有限公司 | 测试基板及延长测试基板使用寿命的方法 |
| US10651097B2 (en) | 2018-08-30 | 2020-05-12 | Lam Research Corporation | Using identifiers to map edge ring part numbers onto slot numbers |
| DE102019209110A1 (de) * | 2019-06-24 | 2020-12-24 | Sms Group Gmbh | Industrielle Anlage, insbesondere Anlage der metallerzeugenden Industrie oder der Aluminium- oder Stahlindustrie und Verfahren zum Betreiben einer industriellen Anlage, insbesondere einer Anlage der metallerzeugenden Industrie oder der Aluminium- oder Stahlindustrie |
| JP7289992B1 (ja) * | 2021-07-13 | 2023-06-12 | 株式会社日立ハイテク | 診断装置及び診断方法並びにプラズマ処理装置及び半導体装置製造システム |
| US20230195074A1 (en) * | 2021-12-21 | 2023-06-22 | Applied Materials, Inc. | Diagnostic methods for substrate manufacturing chambers using physics-based models |
| US20230260767A1 (en) * | 2022-02-15 | 2023-08-17 | Applied Materials, Inc. | Process control knob estimation |
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-
2010
- 2010-06-29 JP JP2012518586A patent/JP5629770B2/ja active Active
- 2010-06-29 CN CN201080027296.6A patent/CN102804353B/zh active Active
- 2010-06-29 KR KR1020117031561A patent/KR101741271B1/ko active IP Right Grant
- 2010-06-29 JP JP2012518588A patent/JP5693573B2/ja active Active
- 2010-06-29 SG SG2011085107A patent/SG176147A1/en unknown
- 2010-06-29 WO PCT/US2010/040468 patent/WO2011002804A2/en active Application Filing
- 2010-06-29 CN CN201080029444.8A patent/CN102473631B/zh active Active
- 2010-06-29 JP JP2012518589A patent/JP2012532464A/ja active Pending
- 2010-06-29 SG SG2011085115A patent/SG176564A1/en unknown
- 2010-06-29 WO PCT/US2010/040456 patent/WO2011002800A2/en active Application Filing
- 2010-06-29 SG SG2011085172A patent/SG176567A1/en unknown
- 2010-06-29 CN CN201080029270.5A patent/CN102474968B/zh active Active
- 2010-06-29 JP JP2012518584A patent/JP5599882B2/ja active Active
- 2010-06-29 WO PCT/US2010/040478 patent/WO2011002811A2/en active Application Filing
- 2010-06-29 CN CN201080029024.XA patent/CN102473590B/zh active Active
- 2010-06-29 WO PCT/US2010/040477 patent/WO2011002810A2/en active Application Filing
- 2010-06-29 KR KR1020117031573A patent/KR101708078B1/ko active IP Right Grant
- 2010-06-29 SG SG2011085149A patent/SG176566A1/en unknown
- 2010-06-29 KR KR1020117031499A patent/KR101708077B1/ko active IP Right Grant
- 2010-06-29 KR KR1020117031592A patent/KR101741274B1/ko active IP Right Grant
- 2010-06-29 WO PCT/US2010/040465 patent/WO2011002803A2/en active Application Filing
- 2010-06-29 CN CN201080028990.XA patent/CN102804929B/zh active Active
- 2010-06-29 KR KR1020117031574A patent/KR101741272B1/ko active IP Right Grant
- 2010-06-29 JP JP2012518582A patent/JP5624618B2/ja active Active
- 2010-06-29 SG SG2011085131A patent/SG176565A1/en unknown
- 2010-06-30 TW TW099121519A patent/TWI536193B/zh active
- 2010-06-30 TW TW099121515A patent/TWI484435B/zh active
- 2010-06-30 TW TW099121516A patent/TWI509375B/zh active
- 2010-06-30 TW TW099121513A patent/TWI495970B/zh active
- 2010-06-30 TW TW099121511A patent/TWI480917B/zh active
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