SG153669A1 - Stacked 1t-nmemory cell structure - Google Patents

Stacked 1t-nmemory cell structure

Info

Publication number
SG153669A1
SG153669A1 SG200717931-0A SG2007179310A SG153669A1 SG 153669 A1 SG153669 A1 SG 153669A1 SG 2007179310 A SG2007179310 A SG 2007179310A SG 153669 A1 SG153669 A1 SG 153669A1
Authority
SG
Singapore
Prior art keywords
architecture
stacked
cross
nmemory
point
Prior art date
Application number
SG200717931-0A
Other languages
English (en)
Inventor
Hasan Nejad
Mirmajid Seyyedy
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of SG153669A1 publication Critical patent/SG153669A1/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/78—Array wherein the memory cells of a group share an access device, all the memory cells of the group having a common electrode and the access device being not part of a word line or a bit line driver
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Static Random-Access Memory (AREA)
  • Thin Film Transistor (AREA)
SG200717931-0A 2003-05-15 2004-05-13 Stacked 1t-nmemory cell structure SG153669A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/438,344 US7042749B2 (en) 2002-05-16 2003-05-15 Stacked 1T-nmemory cell structure

Publications (1)

Publication Number Publication Date
SG153669A1 true SG153669A1 (en) 2009-07-29

Family

ID=33476571

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200717931-0A SG153669A1 (en) 2003-05-15 2004-05-13 Stacked 1t-nmemory cell structure

Country Status (9)

Country Link
US (1) US7042749B2 (de)
EP (1) EP1634333B1 (de)
JP (1) JP4966011B2 (de)
KR (1) KR100850579B1 (de)
CN (2) CN101393888B (de)
AT (1) ATE443345T1 (de)
DE (1) DE602004023194D1 (de)
SG (1) SG153669A1 (de)
WO (1) WO2004105039A2 (de)

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Also Published As

Publication number Publication date
CN1823418A (zh) 2006-08-23
KR100850579B1 (ko) 2008-08-06
EP1634333B1 (de) 2009-09-16
US7042749B2 (en) 2006-05-09
DE602004023194D1 (de) 2009-10-29
ATE443345T1 (de) 2009-10-15
JP4966011B2 (ja) 2012-07-04
WO2004105039A2 (en) 2004-12-02
EP1634333A2 (de) 2006-03-15
CN101393888A (zh) 2009-03-25
CN101393888B (zh) 2014-06-25
JP2007511895A (ja) 2007-05-10
WO2004105039A3 (en) 2005-01-20
US20030223292A1 (en) 2003-12-04
CN100511696C (zh) 2009-07-08
KR20060013541A (ko) 2006-02-10

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