ATE443345T1 - Gestapelte 1t-n speicherzellenstruktur - Google Patents

Gestapelte 1t-n speicherzellenstruktur

Info

Publication number
ATE443345T1
ATE443345T1 AT04785544T AT04785544T ATE443345T1 AT E443345 T1 ATE443345 T1 AT E443345T1 AT 04785544 T AT04785544 T AT 04785544T AT 04785544 T AT04785544 T AT 04785544T AT E443345 T1 ATE443345 T1 AT E443345T1
Authority
AT
Austria
Prior art keywords
architecture
1cell
stacked
cross
point
Prior art date
Application number
AT04785544T
Other languages
English (en)
Inventor
Hasan Nejad
Mirmajid Seyyedy
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of ATE443345T1 publication Critical patent/ATE443345T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/78—Array wherein the memory cells of a group share an access device, all the memory cells of the group having a common electrode and the access device being not part of a word line or a bit line driver

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Static Random-Access Memory (AREA)
  • Thin Film Transistor (AREA)
AT04785544T 2003-05-15 2004-05-13 Gestapelte 1t-n speicherzellenstruktur ATE443345T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/438,344 US7042749B2 (en) 2002-05-16 2003-05-15 Stacked 1T-nmemory cell structure
PCT/US2004/015078 WO2004105039A2 (en) 2003-05-15 2004-05-13 STACKED 1T-nMEMORY CELL STRUCTURE

Publications (1)

Publication Number Publication Date
ATE443345T1 true ATE443345T1 (de) 2009-10-15

Family

ID=33476571

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04785544T ATE443345T1 (de) 2003-05-15 2004-05-13 Gestapelte 1t-n speicherzellenstruktur

Country Status (9)

Country Link
US (1) US7042749B2 (de)
EP (1) EP1634333B1 (de)
JP (1) JP4966011B2 (de)
KR (1) KR100850579B1 (de)
CN (2) CN100511696C (de)
AT (1) ATE443345T1 (de)
DE (1) DE602004023194D1 (de)
SG (1) SG153669A1 (de)
WO (1) WO2004105039A2 (de)

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Also Published As

Publication number Publication date
KR100850579B1 (ko) 2008-08-06
EP1634333A2 (de) 2006-03-15
EP1634333B1 (de) 2009-09-16
KR20060013541A (ko) 2006-02-10
CN101393888B (zh) 2014-06-25
JP4966011B2 (ja) 2012-07-04
CN101393888A (zh) 2009-03-25
DE602004023194D1 (de) 2009-10-29
WO2004105039A3 (en) 2005-01-20
US20030223292A1 (en) 2003-12-04
CN100511696C (zh) 2009-07-08
US7042749B2 (en) 2006-05-09
JP2007511895A (ja) 2007-05-10
CN1823418A (zh) 2006-08-23
WO2004105039A2 (en) 2004-12-02
SG153669A1 (en) 2009-07-29

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