SG134270A1 - A method of fabricating a composite substrate with improved electrical properties - Google Patents

A method of fabricating a composite substrate with improved electrical properties

Info

Publication number
SG134270A1
SG134270A1 SG200700331-2A SG2007003312A SG134270A1 SG 134270 A1 SG134270 A1 SG 134270A1 SG 2007003312 A SG2007003312 A SG 2007003312A SG 134270 A1 SG134270 A1 SG 134270A1
Authority
SG
Singapore
Prior art keywords
fabricating
electrical properties
composite substrate
improved electrical
improved
Prior art date
Application number
SG200700331-2A
Other languages
English (en)
Inventor
Frederic Allibert
Sebastien Kerdiles
Original Assignee
Soitec Silicon On Insulator
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec Silicon On Insulator filed Critical Soitec Silicon On Insulator
Publication of SG134270A1 publication Critical patent/SG134270A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76256—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques using silicon etch back techniques, e.g. BESOI, ELTRAN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
SG200700331-2A 2006-01-23 2007-01-17 A method of fabricating a composite substrate with improved electrical properties SG134270A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0600595A FR2896619B1 (fr) 2006-01-23 2006-01-23 Procede de fabrication d'un substrat composite a proprietes electriques ameliorees

Publications (1)

Publication Number Publication Date
SG134270A1 true SG134270A1 (en) 2007-08-29

Family

ID=36997780

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200700331-2A SG134270A1 (en) 2006-01-23 2007-01-17 A method of fabricating a composite substrate with improved electrical properties

Country Status (8)

Country Link
US (1) US7449395B2 (de)
EP (1) EP1811560A1 (de)
JP (1) JP4722823B2 (de)
KR (1) KR100878060B1 (de)
CN (1) CN100446182C (de)
FR (1) FR2896619B1 (de)
SG (1) SG134270A1 (de)
TW (1) TWI334629B (de)

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US7499395B2 (en) * 2005-03-18 2009-03-03 Cisco Technology, Inc. BFD rate-limiting and automatic session activation
US7466694B2 (en) 2006-06-10 2008-12-16 Cisco Technology, Inc. Routing protocol with packet network attributes for improved route selection
FR2903809B1 (fr) * 2006-07-13 2008-10-17 Soitec Silicon On Insulator Traitement thermique de stabilisation d'interface e collage.
JP5044195B2 (ja) * 2006-11-10 2012-10-10 信越化学工業株式会社 Ｓｏｑ基板の製造方法
US8144631B2 (en) 2006-12-13 2012-03-27 Cisco Technology, Inc. Interconnecting IP video endpoints with reduced H.320 call setup time
FR2911430B1 (fr) * 2007-01-15 2009-04-17 Soitec Silicon On Insulator "procede de fabrication d'un substrat hybride"
FR2911431B1 (fr) * 2007-01-16 2009-05-15 Soitec Silicon On Insulator Procede de fabrication de structures soi a couche isolante d'epaisseur controlee
JP4925902B2 (ja) * 2007-04-12 2012-05-09 信越化学工業株式会社 光導波路装置および光導波路装置の製造方法
US7763502B2 (en) * 2007-06-22 2010-07-27 Semiconductor Energy Laboratory Co., Ltd Semiconductor substrate, method for manufacturing semiconductor substrate, semiconductor device, and electronic device
FR2919427B1 (fr) * 2007-07-26 2010-12-03 Soitec Silicon On Insulator Structure a reservoir de charges.
FR2920589B1 (fr) * 2007-09-04 2010-12-03 Soitec Silicon On Insulator "procede d'obtention d'un substrat hybride comprenant au moins une couche d'un materiau nitrure"
US8067793B2 (en) * 2007-09-27 2011-11-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including storage capacitor with yttrium oxide capacitor dielectric
US8101501B2 (en) * 2007-10-10 2012-01-24 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
FR2926671B1 (fr) * 2008-01-17 2010-04-02 Soitec Silicon On Insulator Procede de traitement de defauts lors de collage de plaques
WO2009104060A1 (en) * 2008-02-20 2009-08-27 S.O.I.Tec Silicon On Insulator Technologies Oxidation after oxide dissolution
CN101960604B (zh) * 2008-03-13 2013-07-10 S.O.I.Tec绝缘体上硅技术公司 绝缘隐埋层中有带电区的衬底
CN102983167B (zh) * 2008-03-13 2015-06-17 Soitec公司 半导体结构
JP5548395B2 (ja) * 2008-06-25 2014-07-16 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法
KR101629193B1 (ko) * 2008-06-26 2016-06-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Ｓｏｉ 기판의 제작 방법
JP5663150B2 (ja) * 2008-07-22 2015-02-04 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法
TWI484622B (zh) * 2009-09-08 2015-05-11 Soitec Silicon On Insulator 用以製造基材的方法
JP5917036B2 (ja) 2010-08-05 2016-05-11 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法
CN103155102A (zh) * 2011-02-15 2013-06-12 住友电气工业株式会社 具有保护膜的复合衬底和制造半导体器件的方法
JP5853389B2 (ja) * 2011-03-28 2016-02-09 ソニー株式会社 半導体装置及び半導体装置の製造方法。
FR2980916B1 (fr) * 2011-10-03 2014-03-28 Soitec Silicon On Insulator Procede de fabrication d'une structure de type silicium sur isolant
JP2013110161A (ja) * 2011-11-17 2013-06-06 National Institute Of Advanced Industrial & Technology 素子形成用基板及びその製造方法
FR2984598A1 (fr) * 2011-12-19 2013-06-21 Soitec Silicon On Insulator Structure substrat sur isolant comprenant une structure electriquement isolante et procede associe
FR2989516B1 (fr) * 2012-04-11 2014-04-18 Soitec Silicon On Insulator Procede de fabrication d'une structure soi mettant en oeuvre deux rta
JP2014007325A (ja) * 2012-06-26 2014-01-16 Sumitomo Electric Ind Ltd 炭化珪素半導体装置の製造方法
JP6160617B2 (ja) * 2012-07-25 2017-07-12 信越化学工業株式会社 ハイブリッド基板の製造方法及びハイブリッド基板
CN103456771B (zh) * 2013-07-26 2016-12-28 上海北车永电电子科技有限公司 半导体器件中实现载流子寿命控制的结构及其制造方法
US20170062569A1 (en) * 2014-06-13 2017-03-02 Intel Corporation Surface encapsulation for wafer bonding
CN113541630A (zh) * 2020-04-21 2021-10-22 济南晶正电子科技有限公司 一种复合单晶压电基板及其制备方法
FR3120983A1 (fr) * 2021-03-18 2022-09-23 Soitec Substrat de type semi-conducteur sur isolant pour un transistor à effet de champ à capacité négative

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JPH11274312A (ja) * 1998-03-20 1999-10-08 Sony Corp 半導体装置及びその製造方法
TW444266B (en) 1998-07-23 2001-07-01 Canon Kk Semiconductor substrate and method of producing same
JP4476390B2 (ja) 1998-09-04 2010-06-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6358866B1 (en) 1999-05-14 2002-03-19 Imec Vzw Method for post-oxidation heating of a structure comprising SiO2
FR2817394B1 (fr) 2000-11-27 2003-10-31 Soitec Silicon On Insulator Procede de fabrication d'un substrat notamment pour l'optique, l'electronique ou l'optoelectronique et substrat obtenu par ce procede
WO2003046993A1 (fr) * 2001-11-29 2003-06-05 Shin-Etsu Handotai Co.,Ltd. Procede de production de plaquettes soi
AU2002360825A1 (en) 2002-05-31 2003-12-19 Advanced Micro Devices, Inc. Diffusion barrier layer in semiconductor substrates to reduce copper contamination from the back side
US7074623B2 (en) * 2002-06-07 2006-07-11 Amberwave Systems Corporation Methods of forming strained-semiconductor-on-insulator finFET device structures
FR2855909B1 (fr) * 2003-06-06 2005-08-26 Soitec Silicon On Insulator Procede d'obtention concomitante d'au moins une paire de structures comprenant au moins une couche utile reportee sur un substrat
FR2857982B1 (fr) * 2003-07-24 2007-05-18 Soitec Silicon On Insulator Procede de fabrication d'une couche epitaxiee
WO2005024917A1 (ja) * 2003-09-08 2005-03-17 Sumco Corporation 貼り合わせウェーハの製造方法
US20060014363A1 (en) * 2004-03-05 2006-01-19 Nicolas Daval Thermal treatment of a semiconductor layer
FR2867310B1 (fr) * 2004-03-05 2006-05-26 Soitec Silicon On Insulator Technique d'amelioration de la qualite d'une couche mince prelevee
US7259106B2 (en) * 2004-09-10 2007-08-21 Versatilis Llc Method of making a microelectronic and/or optoelectronic circuitry sheet
FR2880988B1 (fr) * 2005-01-19 2007-03-30 Soitec Silicon On Insulator TRAITEMENT D'UNE COUCHE EN SI1-yGEy PRELEVEE

Also Published As

Publication number Publication date
EP1811560A1 (de) 2007-07-25
TWI334629B (en) 2010-12-11
FR2896619A1 (fr) 2007-07-27
US20070173033A1 (en) 2007-07-26
CN101009220A (zh) 2007-08-01
TW200737403A (en) 2007-10-01
CN100446182C (zh) 2008-12-24
JP2007201430A (ja) 2007-08-09
FR2896619B1 (fr) 2008-05-23
KR100878060B1 (ko) 2009-01-14
KR20070077439A (ko) 2007-07-26
US7449395B2 (en) 2008-11-11
JP4722823B2 (ja) 2011-07-13

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