SG130066A1 - Microelectronic device packages, stacked microelectronic device packages, and methods for manufacturing microelectronic devices - Google Patents

Microelectronic device packages, stacked microelectronic device packages, and methods for manufacturing microelectronic devices

Info

Publication number
SG130066A1
SG130066A1 SG200505523-1A SG2005055231A SG130066A1 SG 130066 A1 SG130066 A1 SG 130066A1 SG 2005055231 A SG2005055231 A SG 2005055231A SG 130066 A1 SG130066 A1 SG 130066A1
Authority
SG
Singapore
Prior art keywords
substrate
die
microelectronic
package
device packages
Prior art date
Application number
SG200505523-1A
Other languages
English (en)
Inventor
Dalson Ye Seng Kim
Chong Chin Hui
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Priority to SG200505523-1A priority Critical patent/SG130066A1/en
Priority to US11/218,028 priority patent/US7504284B2/en
Priority to PCT/US2006/033219 priority patent/WO2007025127A2/fr
Priority to EP06802317.5A priority patent/EP1929524B1/fr
Priority to KR1020087005294A priority patent/KR101024424B1/ko
Priority to TW095131626A priority patent/TWI309469B/zh
Publication of SG130066A1 publication Critical patent/SG130066A1/en
Priority to US12/352,283 priority patent/US8030748B2/en
Priority to US13/251,980 priority patent/US8519523B2/en
Priority to US14/011,138 priority patent/US9299684B2/en
Priority to US15/050,231 priority patent/US9583476B2/en
Priority to US15/419,913 priority patent/US10153254B2/en
Priority to US16/203,555 priority patent/US10861824B2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/105—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L27/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/061—Disposition
    • H01L2224/0612—Layout
    • H01L2224/0613—Square or rectangular array
    • H01L2224/06134—Square or rectangular array covering only portions of the surface to be connected
    • H01L2224/06135—Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/061—Disposition
    • H01L2224/0612—Layout
    • H01L2224/0613—Square or rectangular array
    • H01L2224/06134—Square or rectangular array covering only portions of the surface to be connected
    • H01L2224/06136—Covering only the central area of the surface to be connected, i.e. central arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/4382—Applying permanent coating, e.g. in-situ coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/4824—Connecting between the body and an opposite side of the item with respect to the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73215—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/0651—Wire or wire-like electrical connections from device to substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/0652—Bump or bump-like direct electrical connections from substrate to substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06555—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06572—Auxiliary carrier between devices, the carrier having an electrical connection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06575—Auxiliary carrier between devices, the carrier having no electrical connection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
    • H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
    • H01L2225/1017—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement the lowermost container comprising a device support
    • H01L2225/1023—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement the lowermost container comprising a device support the support being an insulating substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
    • H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
    • H01L2225/1041—Special adaptations for top connections of the lowermost container, e.g. redistribution layer, integral interposer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
    • H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
    • H01L2225/1047—Details of electrical connections between containers
    • H01L2225/1058—Bump or bump-like electrical connections, e.g. balls, pillars, posts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
    • H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
    • H01L2225/1076—Shape of the containers
    • H01L2225/1088—Arrangements to limit the height of the assembly
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/041—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L31/00
    • H01L25/043—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/074—Stacked arrangements of non-apertured devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0756—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/11—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/117—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
    • H01L2924/1533—Connection portion the connection portion being formed on the die mounting surface of the substrate the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate
    • H01L2924/15331—Connection portion the connection portion being formed on the die mounting surface of the substrate the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Combinations Of Printed Boards (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
SG200505523-1A 2005-08-26 2005-08-26 Microelectronic device packages, stacked microelectronic device packages, and methods for manufacturing microelectronic devices SG130066A1 (en)

Priority Applications (12)

Application Number Priority Date Filing Date Title
SG200505523-1A SG130066A1 (en) 2005-08-26 2005-08-26 Microelectronic device packages, stacked microelectronic device packages, and methods for manufacturing microelectronic devices
US11/218,028 US7504284B2 (en) 2005-08-26 2005-08-31 Microelectronic device packages, stacked microelectronic device packages, and methods for manufacturing microelectronic devices
PCT/US2006/033219 WO2007025127A2 (fr) 2005-08-26 2006-08-25 Boitiers de dispositifs microelectroniques, empilages de tels boitiers, et procedes de fabrication de ces dispositifs
EP06802317.5A EP1929524B1 (fr) 2005-08-26 2006-08-25 Boitiers de dispositifs microelectroniques, et empilages de tels boitiers
KR1020087005294A KR101024424B1 (ko) 2005-08-26 2006-08-25 마이크로일렉트로닉 장치 패키지, 적층 마이크로일렉트로닉장치 패키지, 및 마이크로일렉트로닉 장치 제조 방법
TW095131626A TWI309469B (en) 2005-08-26 2006-08-28 Microelectronic device packages, stacked microelectronic device packages, and methods for manufacturing microelectronic devices
US12/352,283 US8030748B2 (en) 2005-08-26 2009-01-12 Microelectronic device packages, stacked microelectronic device packages, and methods for manufacturing microelectronic devices
US13/251,980 US8519523B2 (en) 2005-08-26 2011-10-03 Microelectronic device packages, stacked microelectronic device packages, and methods for manufacturing microelectronic devices
US14/011,138 US9299684B2 (en) 2005-08-26 2013-08-27 Microelectronic device packages, stacked microelectronic device packages, and methods for manufacturing microelectronic devices
US15/050,231 US9583476B2 (en) 2005-08-26 2016-02-22 Microelectronic device packages, stacked microelectronic device packages, and methods for manufacturing microelectronic devices
US15/419,913 US10153254B2 (en) 2005-08-26 2017-01-30 Microelectronic device packages, stacked microelectronic device packages, and methods for manufacturing microelectronic devices
US16/203,555 US10861824B2 (en) 2005-08-26 2018-11-28 Microelectronic device packages, stacked microelectronic device packages, and methods for manufacturing microelectronic devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SG200505523-1A SG130066A1 (en) 2005-08-26 2005-08-26 Microelectronic device packages, stacked microelectronic device packages, and methods for manufacturing microelectronic devices

Publications (1)

Publication Number Publication Date
SG130066A1 true SG130066A1 (en) 2007-03-20

Family

ID=38787684

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200505523-1A SG130066A1 (en) 2005-08-26 2005-08-26 Microelectronic device packages, stacked microelectronic device packages, and methods for manufacturing microelectronic devices

Country Status (6)

Country Link
US (7) US7504284B2 (fr)
EP (1) EP1929524B1 (fr)
KR (1) KR101024424B1 (fr)
SG (1) SG130066A1 (fr)
TW (1) TWI309469B (fr)
WO (1) WO2007025127A2 (fr)

Families Citing this family (123)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101313391B1 (ko) 2004-11-03 2013-10-01 테세라, 인코포레이티드 적층형 패키징
SG130055A1 (en) 2005-08-19 2007-03-20 Micron Technology Inc Microelectronic devices, stacked microelectronic devices, and methods for manufacturing microelectronic devices
SG130066A1 (en) 2005-08-26 2007-03-20 Micron Technology Inc Microelectronic device packages, stacked microelectronic device packages, and methods for manufacturing microelectronic devices
US8058101B2 (en) 2005-12-23 2011-11-15 Tessera, Inc. Microelectronic packages and methods therefor
US8354726B2 (en) * 2006-05-19 2013-01-15 Panasonic Corporation Semiconductor device and method for fabricating the same
KR100891516B1 (ko) * 2006-08-31 2009-04-06 주식회사 하이닉스반도체 적층 가능한 에프비지에이 타입 반도체 패키지와 이를이용한 적층 패키지
US7901989B2 (en) 2006-10-10 2011-03-08 Tessera, Inc. Reconstituted wafer level stacking
US7829438B2 (en) 2006-10-10 2010-11-09 Tessera, Inc. Edge connect wafer level stacking
US8513789B2 (en) 2006-10-10 2013-08-20 Tessera, Inc. Edge connect wafer level stacking with leads extending along edges
US7948015B2 (en) 2006-12-14 2011-05-24 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
US8349167B2 (en) 2006-12-14 2013-01-08 Life Technologies Corporation Methods and apparatus for detecting molecular interactions using FET arrays
US8262900B2 (en) * 2006-12-14 2012-09-11 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
US11339430B2 (en) 2007-07-10 2022-05-24 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
US7952195B2 (en) 2006-12-28 2011-05-31 Tessera, Inc. Stacked packages with bridging traces
KR101409839B1 (ko) * 2007-05-23 2014-06-26 삼성전자주식회사 반도체 패키지
US8461672B2 (en) 2007-07-27 2013-06-11 Tessera, Inc. Reconstituted wafer stack packaging with after-applied pad extensions
JP2009038142A (ja) * 2007-07-31 2009-02-19 Elpida Memory Inc 半導体積層パッケージ
WO2009020572A2 (fr) 2007-08-03 2009-02-12 Tessera Technologies Hungary Kft. Ensembles empilés utilisant des tranches reconstituées
US8043895B2 (en) 2007-08-09 2011-10-25 Tessera, Inc. Method of fabricating stacked assembly including plurality of stacked microelectronic elements
TW200917431A (en) * 2007-10-05 2009-04-16 Advanced Semiconductor Eng Stacked-type chip package structure and method of fabricating the same
US8129832B2 (en) * 2007-10-29 2012-03-06 Stats Chippac Ltd. Mountable integrated circuit package system with substrate having a conductor-free recess
US20090127715A1 (en) * 2007-11-15 2009-05-21 Shin Hangil Mountable integrated circuit package system with protrusion
US7985628B2 (en) * 2007-12-12 2011-07-26 Stats Chippac Ltd. Integrated circuit package system with interconnect lock
US8536692B2 (en) * 2007-12-12 2013-09-17 Stats Chippac Ltd. Mountable integrated circuit package system with mountable integrated circuit die
US8084849B2 (en) * 2007-12-12 2011-12-27 Stats Chippac Ltd. Integrated circuit package system with offset stacking
US7781261B2 (en) * 2007-12-12 2010-08-24 Stats Chippac Ltd. Integrated circuit package system with offset stacking and anti-flash structure
US7800212B2 (en) * 2007-12-27 2010-09-21 Stats Chippac Ltd. Mountable integrated circuit package system with stacking interposer
US8247893B2 (en) * 2007-12-27 2012-08-21 Stats Chippac Ltd. Mountable integrated circuit package system with intra-stack encapsulation
US9236319B2 (en) * 2008-02-29 2016-01-12 Stats Chippac Ltd. Stacked integrated circuit package system
US8068328B2 (en) * 2008-03-12 2011-11-29 Intel Corporation Nanolithographic method of manufacturing an embedded passive device for a microelectronic application, and microelectronic device containing same
TWI358816B (en) * 2008-03-19 2012-02-21 Chipmos Technologies Inc Chip package structure
SG155793A1 (en) * 2008-03-19 2009-10-29 Micron Technology Inc Upgradeable and repairable semiconductor packages and methods
US20090243069A1 (en) * 2008-03-26 2009-10-01 Zigmund Ramirez Camacho Integrated circuit package system with redistribution
US8680662B2 (en) 2008-06-16 2014-03-25 Tessera, Inc. Wafer level edge stacking
WO2010008480A2 (fr) 2008-06-25 2010-01-21 Ion Torrent Systems Incorporated Procédés et appareil pour mesurer des substances à analyser à l'aide de réseaux fet à grande échelle
US9293385B2 (en) * 2008-07-30 2016-03-22 Stats Chippac Ltd. RDL patterning with package on package system
US7750455B2 (en) * 2008-08-08 2010-07-06 Stats Chippac Ltd. Triple tier package on package system
US20100137143A1 (en) 2008-10-22 2010-06-03 Ion Torrent Systems Incorporated Methods and apparatus for measuring analytes
US20100301398A1 (en) 2009-05-29 2010-12-02 Ion Torrent Systems Incorporated Methods and apparatus for measuring analytes
US8106498B2 (en) * 2009-03-05 2012-01-31 Stats Chippac Ltd. Integrated circuit packaging system with a dual board-on-chip structure and method of manufacture thereof
US8466542B2 (en) 2009-03-13 2013-06-18 Tessera, Inc. Stacked microelectronic assemblies having vias extending through bond pads
US8776573B2 (en) 2009-05-29 2014-07-15 Life Technologies Corporation Methods and apparatus for measuring analytes
US20120261274A1 (en) 2009-05-29 2012-10-18 Life Technologies Corporation Methods and apparatus for measuring analytes
US8743561B2 (en) * 2009-08-26 2014-06-03 Taiwan Semiconductor Manufacturing Company, Ltd. Wafer-level molded structure for package assembly
TWI411066B (zh) * 2009-09-08 2013-10-01 Advanced Semiconductor Eng 封裝結構以及封裝製程
KR101123804B1 (ko) * 2009-11-20 2012-03-12 주식회사 하이닉스반도체 반도체 칩 및 이를 갖는 적층 반도체 패키지
US8487790B2 (en) 2010-06-30 2013-07-16 Life Technologies Corporation Chemical detection circuit including a serializer circuit
JP5952813B2 (ja) 2010-06-30 2016-07-13 ライフ テクノロジーズ コーポレーション Ｉｓｆｅｔアレイをテストする方法及び装置
TWI547688B (zh) 2010-06-30 2016-09-01 生命技術公司 離子感測電荷累積電路及方法
US11307166B2 (en) 2010-07-01 2022-04-19 Life Technologies Corporation Column ADC
TWI527245B (zh) 2010-07-03 2016-03-21 生命技術公司 具有微摻雜汲極之化學感測器
US8482111B2 (en) 2010-07-19 2013-07-09 Tessera, Inc. Stackable molded microelectronic packages
US9159708B2 (en) 2010-07-19 2015-10-13 Tessera, Inc. Stackable molded microelectronic packages with area array unit connectors
US9618475B2 (en) 2010-09-15 2017-04-11 Life Technologies Corporation Methods and apparatus for measuring analytes
WO2012039812A1 (fr) 2010-09-24 2012-03-29 Life Technologies Corporation Circuits à transistors à paires appariées
US8553420B2 (en) 2010-10-19 2013-10-08 Tessera, Inc. Enhanced stacked microelectronic assemblies with central contacts and improved thermal characteristics
KR101796116B1 (ko) 2010-10-20 2017-11-10 삼성전자 주식회사 반도체 장치, 이를 포함하는 메모리 모듈, 메모리 시스템 및 그 동작방법
US8409917B2 (en) 2011-03-22 2013-04-02 Stats Chippac Ltd. Integrated circuit packaging system with an interposer substrate and method of manufacture thereof
US9013033B2 (en) 2011-04-21 2015-04-21 Tessera, Inc. Multiple die face-down stacking for two or more die
US8304881B1 (en) 2011-04-21 2012-11-06 Tessera, Inc. Flip-chip, face-up and face-down wirebond combination package
US8970028B2 (en) 2011-12-29 2015-03-03 Invensas Corporation Embedded heat spreader for package with multiple microelectronic elements and face-down connection
US8338963B2 (en) 2011-04-21 2012-12-25 Tessera, Inc. Multiple die face-down stacking for two or more die
US8952516B2 (en) 2011-04-21 2015-02-10 Tessera, Inc. Multiple die stacking for two or more die
US8633576B2 (en) 2011-04-21 2014-01-21 Tessera, Inc. Stacked chip-on-board module with edge connector
US8928153B2 (en) 2011-04-21 2015-01-06 Tessera, Inc. Flip-chip, face-up and face-down centerbond memory wirebond assemblies
KR101128063B1 (ko) 2011-05-03 2012-04-23 테세라, 인코포레이티드 캡슐화 층의 표면에 와이어 본드를 구비하는 패키지 적층형 어셈블리
US8530277B2 (en) * 2011-06-16 2013-09-10 Stats Chippac Ltd. Integrated circuit packaging system with package on package support and method of manufacture thereof
KR20130030935A (ko) * 2011-09-20 2013-03-28 에스케이하이닉스 주식회사 반도체 장치
EP2764544A1 (fr) * 2011-10-03 2014-08-13 Invensas Corporation Réduction au minimum des stubs pour montages à connexions des fils à dés multiples avec fenêtres parallèles
US8836136B2 (en) 2011-10-17 2014-09-16 Invensas Corporation Package-on-package assembly with wire bond vias
US9970984B2 (en) 2011-12-01 2018-05-15 Life Technologies Corporation Method and apparatus for identifying defects in a chemical sensor array
US8946757B2 (en) 2012-02-17 2015-02-03 Invensas Corporation Heat spreading substrate with embedded interconnects
US8372741B1 (en) 2012-02-24 2013-02-12 Invensas Corporation Method for package-on-package assembly with wire bonds to encapsulation surface
US8835228B2 (en) 2012-05-22 2014-09-16 Invensas Corporation Substrate-less stackable package with wire-bond interconnect
US8786331B2 (en) 2012-05-29 2014-07-22 Life Technologies Corporation System for reducing noise in a chemical sensor array
US9391008B2 (en) 2012-07-31 2016-07-12 Invensas Corporation Reconstituted wafer-level package DRAM
US9502390B2 (en) 2012-08-03 2016-11-22 Invensas Corporation BVA interposer
US8878353B2 (en) 2012-12-20 2014-11-04 Invensas Corporation Structure for microelectronic packaging with bond elements to encapsulation surface
US9080968B2 (en) 2013-01-04 2015-07-14 Life Technologies Corporation Methods and systems for point of use removal of sacrificial material
US9841398B2 (en) 2013-01-08 2017-12-12 Life Technologies Corporation Methods for manufacturing well structures for low-noise chemical sensors
US9136254B2 (en) 2013-02-01 2015-09-15 Invensas Corporation Microelectronic package having wire bond vias and stiffening layer
US9123600B2 (en) * 2013-02-27 2015-09-01 Invensas Corporation Microelectronic package with consolidated chip structures
US8963216B2 (en) 2013-03-13 2015-02-24 Life Technologies Corporation Chemical sensor with sidewall spacer sensor surface
US9116117B2 (en) 2013-03-15 2015-08-25 Life Technologies Corporation Chemical sensor with sidewall sensor surface
EP2972279B1 (fr) 2013-03-15 2021-10-06 Life Technologies Corporation Capteur chimique avec des surfaces de capteur continues
CN105264366B (zh) 2013-03-15 2019-04-16 生命科技公司 具有一致传感器表面区域的化学传感器
WO2014149779A1 (fr) 2013-03-15 2014-09-25 Life Technologies Corporation Dispositif chimique à élément conducteur mince
US9835585B2 (en) 2013-03-15 2017-12-05 Life Technologies Corporation Chemical sensor with protruded sensor surface
US20140336063A1 (en) 2013-05-09 2014-11-13 Life Technologies Corporation Windowed Sequencing
US10458942B2 (en) 2013-06-10 2019-10-29 Life Technologies Corporation Chemical sensor array having multiple sensors per well
US9082766B2 (en) * 2013-08-06 2015-07-14 Google Technology Holdings LLC Method to enhance reliability of through mold via TMVA part on part POP devices
US9167710B2 (en) 2013-08-07 2015-10-20 Invensas Corporation Embedded packaging with preformed vias
US9685365B2 (en) 2013-08-08 2017-06-20 Invensas Corporation Method of forming a wire bond having a free end
US20150076714A1 (en) 2013-09-16 2015-03-19 Invensas Corporation Microelectronic element with bond elements to encapsulation surface
US9583456B2 (en) 2013-11-22 2017-02-28 Invensas Corporation Multiple bond via arrays of different wire heights on a same substrate
US9263394B2 (en) 2013-11-22 2016-02-16 Invensas Corporation Multiple bond via arrays of different wire heights on a same substrate
US9379074B2 (en) 2013-11-22 2016-06-28 Invensas Corporation Die stacks with one or more bond via arrays of wire bond wires and with one or more arrays of bump interconnects
US9583411B2 (en) 2014-01-17 2017-02-28 Invensas Corporation Fine pitch BVA using reconstituted wafer with area array accessible for testing
US10381326B2 (en) 2014-05-28 2019-08-13 Invensas Corporation Structure and method for integrated circuits packaging with increased density
US9735084B2 (en) 2014-12-11 2017-08-15 Invensas Corporation Bond via array for thermal conductivity
WO2016100486A1 (fr) 2014-12-18 2016-06-23 Life Technologies Corporation Circuit intégré à haut débit de données ayant une configuration d'émetteur
US10077472B2 (en) 2014-12-18 2018-09-18 Life Technologies Corporation High data rate integrated circuit with power management
CN107407656B (zh) 2014-12-18 2020-04-07 生命科技公司 使用大规模 fet 阵列测量分析物的方法和装置
US9888579B2 (en) 2015-03-05 2018-02-06 Invensas Corporation Pressing of wire bond wire tips to provide bent-over tips
US9502372B1 (en) 2015-04-30 2016-11-22 Invensas Corporation Wafer-level packaging using wire bond wires in place of a redistribution layer
US9761562B2 (en) 2015-05-06 2017-09-12 Micron Technology, Inc. Semiconductor device packages including a controller element
US9761554B2 (en) 2015-05-07 2017-09-12 Invensas Corporation Ball bonding metal wire bond wires to metal pads
US9871019B2 (en) 2015-07-17 2018-01-16 Invensas Corporation Flipped die stack assemblies with leadframe interconnects
US10490528B2 (en) 2015-10-12 2019-11-26 Invensas Corporation Embedded wire bond wires
US9490222B1 (en) 2015-10-12 2016-11-08 Invensas Corporation Wire bond wires for interference shielding
US10332854B2 (en) 2015-10-23 2019-06-25 Invensas Corporation Anchoring structure of fine pitch bva
US10181457B2 (en) 2015-10-26 2019-01-15 Invensas Corporation Microelectronic package for wafer-level chip scale packaging with fan-out
KR102437774B1 (ko) 2015-11-17 2022-08-30 삼성전자주식회사 인쇄 회로 기판
US9911718B2 (en) 2015-11-17 2018-03-06 Invensas Corporation ‘RDL-First’ packaged microelectronic device for a package-on-package device
US9659848B1 (en) 2015-11-18 2017-05-23 Invensas Corporation Stiffened wires for offset BVA
US9984992B2 (en) 2015-12-30 2018-05-29 Invensas Corporation Embedded wire bond wires for vertical integration with separate surface mount and wire bond mounting surfaces
US10566310B2 (en) * 2016-04-11 2020-02-18 Invensas Corporation Microelectronic packages having stacked die and wire bond interconnects
US9935075B2 (en) 2016-07-29 2018-04-03 Invensas Corporation Wire bonding method and apparatus for electromagnetic interference shielding
US10299368B2 (en) 2016-12-21 2019-05-21 Invensas Corporation Surface integrated waveguides and circuit structures therefor
KR101942747B1 (ko) 2017-12-15 2019-01-28 삼성전기 주식회사 팬-아웃 반도체 패키지
JP6759464B2 (ja) * 2018-03-20 2020-09-23 株式会社東芝 多接合型太陽電池モジュール及び太陽光発電システム
US11127716B2 (en) 2018-04-12 2021-09-21 Analog Devices International Unlimited Company Mounting structures for integrated device packages
US11393698B2 (en) * 2020-12-18 2022-07-19 STATS ChipPAC Pte. Ltd. Mask design for improved attach position

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010000053A1 (en) * 1998-10-21 2001-03-22 Suh Hee Joong Chip stack-type semiconductor package and method for fabricating the same
DE10023823A1 (de) * 2000-05-15 2001-12-06 Infineon Technologies Ag Multichip-Gehäuse
US20020027295A1 (en) * 2000-09-04 2002-03-07 Fujitsu Limited Stacked semiconductor device and method of producing the same
US6472736B1 (en) * 2002-03-13 2002-10-29 Kingpak Technology Inc. Stacked structure for memory chips
US20030124766A1 (en) * 2001-12-29 2003-07-03 Kim Ji Yon Method for manufacturing stacked chip package
US20040201087A1 (en) * 2003-01-03 2004-10-14 Dong-Ho Lee Stack package made of chip scale packages
US20050001305A1 (en) * 2003-07-04 2005-01-06 Samsung Electronics Co., Ltd. Stack package of semiconductor device
US20050104182A1 (en) * 2003-11-13 2005-05-19 Kim Jung-Jin Stacked BGA packages

Family Cites Families (117)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US729110A (en) * 1903-02-17 1903-05-26 Charles P Young Rural-delivery letter-box.
JPH025553A (ja) 1988-06-24 1990-01-10 Fujitsu Ltd 半導体装置
JPH0289852U (fr) 1988-12-27 1990-07-17
JPH03159146A (ja) 1989-11-16 1991-07-09 Tokyo Electron Ltd プロービングカード
US5258330A (en) * 1990-09-24 1993-11-02 Tessera, Inc. Semiconductor chip assemblies with fan-in leads
US5946553A (en) * 1991-06-04 1999-08-31 Micron Technology, Inc. Process for manufacturing a semiconductor package with bi-substrate die
US5252857A (en) * 1991-08-05 1993-10-12 International Business Machines Corporation Stacked DCA memory chips
KR940008327B1 (ko) * 1991-10-10 1994-09-12 삼성전자 주식회사 반도체 패키지 및 그 실장방법
US5128831A (en) * 1991-10-31 1992-07-07 Micron Technology, Inc. High-density electronic package comprising stacked sub-modules which are electrically interconnected by solder-filled vias
TW236744B (fr) 1994-03-23 1994-12-21 Thomson Consumer Electronics
US6013948A (en) * 1995-11-27 2000-01-11 Micron Technology, Inc. Stackable chip scale semiconductor package with mating contacts on opposed surfaces
US6072236A (en) * 1996-03-07 2000-06-06 Micron Technology, Inc. Micromachined chip scale package
JP2806357B2 (ja) * 1996-04-18 1998-09-30 日本電気株式会社 スタックモジュール
DE19626126C2 (de) * 1996-06-28 1998-04-16 Fraunhofer Ges Forschung Verfahren zur Ausbildung einer räumlichen Chipanordnung und räumliche Chipanordung
US5994166A (en) * 1997-03-10 1999-11-30 Micron Technology, Inc. Method of constructing stacked packages
KR100246333B1 (ko) * 1997-03-14 2000-03-15 김영환 비 지 에이 패키지 및 그 제조방법
US5986209A (en) * 1997-07-09 1999-11-16 Micron Technology, Inc. Package stack via bottom leaded plastic (BLP) packaging
US6885092B1 (en) * 1997-09-29 2005-04-26 Hitachi, Ltd. Semiconductor device and a memory system including a plurality of IC chips in a common package
JP3937265B2 (ja) * 1997-09-29 2007-06-27 エルピーダメモリ株式会社 半導体装置
US6055778A (en) * 1997-12-01 2000-05-02 Aoyama Seisakusho Co., Ltd. Guide slider for window regulator
US6117382A (en) * 1998-02-05 2000-09-12 Micron Technology, Inc. Method for encasing array packages
US6175149B1 (en) * 1998-02-13 2001-01-16 Micron Technology, Inc. Mounting multiple semiconductor dies in a package
US6297547B1 (en) * 1998-02-13 2001-10-02 Micron Technology Inc. Mounting multiple semiconductor dies in a package
US6429528B1 (en) * 1998-02-27 2002-08-06 Micron Technology, Inc. Multichip semiconductor package
US6028365A (en) * 1998-03-30 2000-02-22 Micron Technology, Inc. Integrated circuit package and method of fabrication
US6072233A (en) * 1998-05-04 2000-06-06 Micron Technology, Inc. Stackable ball grid array package
US5990566A (en) * 1998-05-20 1999-11-23 Micron Technology, Inc. High density semiconductor package
US6020629A (en) * 1998-06-05 2000-02-01 Micron Technology, Inc. Stacked semiconductor package and method of fabrication
JP4343286B2 (ja) * 1998-07-10 2009-10-14 シチズンホールディングス株式会社 半導体装置の製造方法
US6153929A (en) * 1998-08-21 2000-11-28 Micron Technology, Inc. Low profile multi-IC package connector
JP3395164B2 (ja) * 1998-11-05 2003-04-07 インターナショナル・ビジネス・マシーンズ・コーポレーション 半導体装置
JP2000228468A (ja) 1999-02-05 2000-08-15 Mitsubishi Electric Corp 半導体チップ及び半導体装置
US6294839B1 (en) * 1999-08-30 2001-09-25 Micron Technology, Inc. Apparatus and methods of packaging and testing die
US6212767B1 (en) * 1999-08-31 2001-04-10 Micron Technology, Inc. Assembling a stacked die package
US6303981B1 (en) * 1999-09-01 2001-10-16 Micron Technology, Inc. Semiconductor package having stacked dice and leadframes and method of fabrication
JP2001127088A (ja) * 1999-10-27 2001-05-11 Mitsubishi Electric Corp 半導体装置
JP3456462B2 (ja) * 2000-02-28 2003-10-14 日本電気株式会社 半導体装置及びその製造方法
JP2001257307A (ja) 2000-03-09 2001-09-21 Sharp Corp 半導体装置
US6560117B2 (en) * 2000-06-28 2003-05-06 Micron Technology, Inc. Packaged microelectronic die assemblies and methods of manufacture
US6552910B1 (en) * 2000-06-28 2003-04-22 Micron Technology, Inc. Stacked-die assemblies with a plurality of microelectronic devices and methods of manufacture
JP2002033441A (ja) * 2000-07-14 2002-01-31 Mitsubishi Electric Corp 半導体装置
TW459361B (en) * 2000-07-17 2001-10-11 Siliconware Precision Industries Co Ltd Three-dimensional multiple stacked-die packaging structure
KR100379600B1 (ko) * 2000-08-14 2003-04-10 삼성전자주식회사 듀얼 칩 패키지의 제조 방법
US6607937B1 (en) * 2000-08-23 2003-08-19 Micron Technology, Inc. Stacked microelectronic dies and methods for stacking microelectronic dies
JP3499202B2 (ja) * 2000-10-16 2004-02-23 沖電気工業株式会社 半導体装置の製造方法
JP2002134650A (ja) * 2000-10-23 2002-05-10 Rohm Co Ltd 半導体装置およびその製造方法
US6418033B1 (en) * 2000-11-16 2002-07-09 Unitive Electronics, Inc. Microelectronic packages in which second microelectronic substrates are oriented relative to first microelectronic substrates at acute angles
US6664143B2 (en) * 2000-11-22 2003-12-16 North Carolina State University Methods of fabricating vertical field effect transistors by conformal channel layer deposition on sidewalls
US6506681B2 (en) * 2000-12-06 2003-01-14 Micron Technology, Inc. Thin flip—chip method
TW565925B (en) * 2000-12-14 2003-12-11 Vanguard Int Semiconduct Corp Multi-chip semiconductor package structure process
JP3420748B2 (ja) * 2000-12-14 2003-06-30 松下電器産業株式会社 半導体装置及びその製造方法
JP3683179B2 (ja) * 2000-12-26 2005-08-17 松下電器産業株式会社 半導体装置及びその製造方法
JP2002208656A (ja) 2001-01-11 2002-07-26 Mitsubishi Electric Corp 半導体装置
KR100401020B1 (ko) * 2001-03-09 2003-10-08 앰코 테크놀로지 코리아 주식회사 반도체칩의 스택킹 구조 및 이를 이용한 반도체패키지
SG106054A1 (en) * 2001-04-17 2004-09-30 Micron Technology Inc Method and apparatus for package reduction in stacked chip and board assemblies
JP4454181B2 (ja) * 2001-05-15 2010-04-21 富士通マイクロエレクトロニクス株式会社 半導体装置
JP2002373969A (ja) * 2001-06-15 2002-12-26 Oki Electric Ind Co Ltd 半導体装置及び半導体装置の製造方法
US6740906B2 (en) * 2001-07-23 2004-05-25 Cree, Inc. Light emitting diodes including modifications for submount bonding
KR100445073B1 (ko) * 2001-08-21 2004-08-21 삼성전자주식회사 듀얼 다이 패키지
US20030038356A1 (en) * 2001-08-24 2003-02-27 Derderian James M Semiconductor devices including stacking spacers thereon, assemblies including the semiconductor devices, and methods
US20030042615A1 (en) * 2001-08-30 2003-03-06 Tongbi Jiang Stacked microelectronic devices and methods of fabricating same
US6548376B2 (en) * 2001-08-30 2003-04-15 Micron Technology, Inc. Methods of thinning microelectronic workpieces
JP2003086733A (ja) 2001-09-11 2003-03-20 Matsushita Electric Ind Co Ltd 半導体装置とその製造方法およびそれを用いた電子機器
KR100447869B1 (ko) * 2001-12-27 2004-09-08 삼성전자주식회사 다핀 적층 반도체 칩 패키지 및 이에 사용되는 리드 프레임
US6896760B1 (en) * 2002-01-16 2005-05-24 Micron Technology, Inc. Fabrication of stacked microelectronic devices
JP2003273317A (ja) * 2002-03-19 2003-09-26 Nec Electronics Corp 半導体装置及びその製造方法
US7423336B2 (en) * 2002-04-08 2008-09-09 Micron Technology, Inc. Bond pad rerouting element, rerouted semiconductor devices including the rerouting element, and assemblies including the rerouted semiconductor devices
KR100470897B1 (ko) * 2002-07-19 2005-03-10 삼성전자주식회사 듀얼 다이 패키지 제조 방법
AU2003272405A1 (en) 2002-09-17 2004-04-08 Chippac, Inc. Semiconductor multi-package module having wire bond interconnection between stacked packages
DE10251530B4 (de) * 2002-11-04 2005-03-03 Infineon Technologies Ag Stapelanordnung eines Speichermoduls
JP2004172157A (ja) 2002-11-15 2004-06-17 Shinko Electric Ind Co Ltd 半導体パッケージおよびパッケージスタック半導体装置
DE10259221B4 (de) * 2002-12-17 2007-01-25 Infineon Technologies Ag Elektronisches Bauteil mit einem Stapel aus Halbleiterchips und Verfahren zur Herstellung desselben
US6861288B2 (en) * 2003-01-23 2005-03-01 St Assembly Test Services, Ltd. Stacked semiconductor packages and method for the fabrication thereof
JP4615189B2 (ja) 2003-01-29 2011-01-19 シャープ株式会社 半導体装置およびインターポーザチップ
JP3917946B2 (ja) * 2003-03-11 2007-05-23 富士通株式会社 積層型半導体装置
US6856009B2 (en) * 2003-03-11 2005-02-15 Micron Technology, Inc. Techniques for packaging multiple device components
TWI338927B (en) 2003-04-02 2011-03-11 United Test And Assembly Ct Multi-chip ball grid array package and method of manufacture
KR20040087501A (ko) 2003-04-08 2004-10-14 삼성전자주식회사 센터 패드 반도체 칩의 패키지 및 그 제조방법
TWI311353B (en) * 2003-04-18 2009-06-21 Advanced Semiconductor Eng Stacked chip package structure
US7230331B2 (en) * 2003-04-22 2007-06-12 Industrial Technology Research Institute Chip package structure and process for fabricating the same
TWI225292B (en) 2003-04-23 2004-12-11 Advanced Semiconductor Eng Multi-chips stacked package
US7095103B1 (en) 2003-05-01 2006-08-22 Amkor Technology, Inc. Leadframe based memory card
JP2005011986A (ja) * 2003-06-19 2005-01-13 Sanyo Electric Co Ltd 半導体装置
KR100604821B1 (ko) * 2003-06-30 2006-07-26 삼성전자주식회사 적층형 볼 그리드 어레이 패키지 및 그 제조방법
KR100546374B1 (ko) * 2003-08-28 2006-01-26 삼성전자주식회사 센터 패드를 갖는 적층형 반도체 패키지 및 그 제조방법
DE10339890A1 (de) 2003-08-29 2005-03-31 Infineon Technologies Ag Halbleiterbauelement
US7071421B2 (en) * 2003-08-29 2006-07-04 Micron Technology, Inc. Stacked microfeature devices and associated methods
KR100541395B1 (ko) 2003-09-09 2006-01-11 삼성전자주식회사 반도체칩 적층장치, 이것을 이용한 반도체 패키지의제조방법, 그리고 이러한 방법에 의하여 제조된 반도체패키지
WO2005059967A2 (fr) 2003-12-17 2005-06-30 Chippac, Inc. Module de boitier a plusieurs puces dote d'un boitier inverse empile au-dessus d'une puce
DE10360708B4 (de) * 2003-12-19 2008-04-10 Infineon Technologies Ag Halbleitermodul mit einem Halbleiterstapel, Umverdrahtungsplatte, und Verfahren zur Herstellung derselben
EP1560267A1 (fr) 2004-01-29 2005-08-03 Kingston Technology Corporation Boítier de circuits intégrés multiples à l'échelle de puces
US7422930B2 (en) * 2004-03-02 2008-09-09 Infineon Technologies Ag Integrated circuit with re-route layer and stacked die assembly
CN100511672C (zh) 2004-03-25 2009-07-08 日本电气株式会社 芯片层叠型半导体装置
TWI236744B (en) 2004-06-25 2005-07-21 Advanced Semiconductor Eng Method for manufacturing stacked multi-chip package
US7602618B2 (en) * 2004-08-25 2009-10-13 Micron Technology, Inc. Methods and apparatuses for transferring heat from stacked microfeature devices
KR100688501B1 (ko) * 2004-09-10 2007-03-02 삼성전자주식회사 미러링 구조를 갖는 스택 ｂｏｃ 패키지 및 이를 장착한양면 실장형 메모리 모듈
US20060108676A1 (en) * 2004-11-22 2006-05-25 Punzalan Nelson V Jr Multi-chip package using an interposer
US7205656B2 (en) * 2005-02-22 2007-04-17 Micron Technology, Inc. Stacked device package for peripheral and center device pad layout device
US7364945B2 (en) * 2005-03-31 2008-04-29 Stats Chippac Ltd. Method of mounting an integrated circuit package in an encapsulant cavity
JP5346578B2 (ja) * 2005-03-31 2013-11-20 スタッツ・チップパック・リミテッド 半導体アセンブリおよびその作製方法
US7429786B2 (en) * 2005-04-29 2008-09-30 Stats Chippac Ltd. Semiconductor package including second substrate and having exposed substrate surfaces on upper and lower sides
SG130055A1 (en) 2005-08-19 2007-03-20 Micron Technology Inc Microelectronic devices, stacked microelectronic devices, and methods for manufacturing microelectronic devices
SG130066A1 (en) 2005-08-26 2007-03-20 Micron Technology Inc Microelectronic device packages, stacked microelectronic device packages, and methods for manufacturing microelectronic devices
US7485969B2 (en) 2005-09-01 2009-02-03 Micron Technology, Inc. Stacked microelectronic devices and methods for manufacturing microelectronic devices
KR100791576B1 (ko) * 2005-10-13 2008-01-03 삼성전자주식회사 볼 그리드 어레이 유형의 적층 패키지
US7312519B2 (en) * 2006-01-12 2007-12-25 Stats Chippac Ltd. Stacked integrated circuit package-in-package system
SG135074A1 (en) 2006-02-28 2007-09-28 Micron Technology Inc Microelectronic devices, stacked microelectronic devices, and methods for manufacturing such devices
SG139573A1 (en) 2006-07-17 2008-02-29 Micron Technology Inc Microelectronic packages with leadframes, including leadframes configured for stacked die packages, and associated systems and methods
US7851119B2 (en) * 2006-09-07 2010-12-14 Ricoh Company, Ltd. Electrophotographic photoconductor, method for producing the same, image forming process, image forming apparatus and process cartridge
DE102006042775B3 (de) * 2006-09-12 2008-03-27 Qimonda Ag Schaltungsmodul und Verfahren zur Herstellung eines Schaltungsmoduls
US7901989B2 (en) * 2006-10-10 2011-03-08 Tessera, Inc. Reconstituted wafer level stacking
JP2009038142A (ja) * 2007-07-31 2009-02-19 Elpida Memory Inc 半導体積層パッケージ
US20100065949A1 (en) * 2008-09-17 2010-03-18 Andreas Thies Stacked Semiconductor Chips with Through Substrate Vias
US8106498B2 (en) * 2009-03-05 2012-01-31 Stats Chippac Ltd. Integrated circuit packaging system with a dual board-on-chip structure and method of manufacture thereof
US8242543B2 (en) * 2009-08-26 2012-08-14 Qualcomm Incorporated Semiconductor wafer-to-wafer bonding for dissimilar semiconductor dies and/or wafers
US9397050B2 (en) * 2009-08-31 2016-07-19 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming pre-molded semiconductor die having bumps embedded in encapsulant
KR102116987B1 (ko) * 2013-10-15 2020-05-29 삼성전자 주식회사 반도체 패키지

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010000053A1 (en) * 1998-10-21 2001-03-22 Suh Hee Joong Chip stack-type semiconductor package and method for fabricating the same
DE10023823A1 (de) * 2000-05-15 2001-12-06 Infineon Technologies Ag Multichip-Gehäuse
US20020027295A1 (en) * 2000-09-04 2002-03-07 Fujitsu Limited Stacked semiconductor device and method of producing the same
US20030124766A1 (en) * 2001-12-29 2003-07-03 Kim Ji Yon Method for manufacturing stacked chip package
US6472736B1 (en) * 2002-03-13 2002-10-29 Kingpak Technology Inc. Stacked structure for memory chips
US20040201087A1 (en) * 2003-01-03 2004-10-14 Dong-Ho Lee Stack package made of chip scale packages
US20050001305A1 (en) * 2003-07-04 2005-01-06 Samsung Electronics Co., Ltd. Stack package of semiconductor device
US20050104182A1 (en) * 2003-11-13 2005-05-19 Kim Jung-Jin Stacked BGA packages

Also Published As

Publication number Publication date
US8519523B2 (en) 2013-08-27
US7504284B2 (en) 2009-03-17
EP1929524A2 (fr) 2008-06-11
TWI309469B (en) 2009-05-01
US20120018887A1 (en) 2012-01-26
US10153254B2 (en) 2018-12-11
US9299684B2 (en) 2016-03-29
US9583476B2 (en) 2017-02-28
KR101024424B1 (ko) 2011-03-23
KR20080031508A (ko) 2008-04-08
US20160172349A1 (en) 2016-06-16
US20070045803A1 (en) 2007-03-01
WO2007025127A3 (fr) 2007-05-18
US20170141085A1 (en) 2017-05-18
US20190096857A1 (en) 2019-03-28
WO2007025127A2 (fr) 2007-03-01
US20090127689A1 (en) 2009-05-21
EP1929524B1 (fr) 2018-11-07
US10861824B2 (en) 2020-12-08
US8030748B2 (en) 2011-10-04
US20130341805A1 (en) 2013-12-26

Similar Documents

Publication Publication Date Title
SG130066A1 (en) Microelectronic device packages, stacked microelectronic device packages, and methods for manufacturing microelectronic devices
US8525192B2 (en) Die package including substrate with molded device
WO2006118720A3 (fr) Ensemble semiconducteur comprenant un boitier-puce et un second substrat, et presentant des surfaces du substrat exposees sur des cotes superieur et inferieur
WO2006065378A3 (fr) Puce retournee et boitier semi-conducteur de soudure de fils
WO2008153043A1 (fr) Dispositif semi-conducteur émettant de la lumière
TW200802789A (en) Stackable molded packages and methods of making the same
TW200717769A (en) Multi-chip package structure
TW200707669A (en) Semiconductor stacked package assembly having exposed substrate surfaces on upper and lower sides
TW200504995A (en) Stacked chip semiconductor device and method for manufacturing the same
TW200721424A (en) Semiconductor device
TW200707679A (en) Semiconductor multi-chip package
WO2008042930A3 (fr) Boîtier à réseau de broches sans plomb et son procédé d'assemblage
WO2008093586A1 (fr) Dispositif semi-conducteur encapsulé par une résine et son procédé de fabrication
TW200713563A (en) Method of making stacked die package
TW200729429A (en) Semiconductor package structure and fabrication method thereof
TW200504952A (en) Method of manufacturing semiconductor package and method of manufacturing semiconductor device
WO2006050439A3 (fr) Boitier semiconducteur multipuce
WO2004043130A3 (fr) Boitier ameliore sur le plan mecanique et son procede de production
TWI239611B (en) Multi chip module with embedded package configuration and method for manufacturing the same
TWI256091B (en) A semiconductor package having stacked chip package and a method
SG149896A1 (en) Methods of fabrication of lead frame-based semiconductor device packages incorporating at least one land grid array package
TW200504963A (en) Multi-chip semiconductor package and manufacturing method thereof
EP1870929A3 (fr) Procédé de fabrication d'un module électronique à plusieurs puces sans broches
US20080009096A1 (en) Package-on-package and method of fabricating the same
US20140097527A1 (en) Method of manufacture integrated circuit package