SG11202109244UA - Mask blank substrate, substrate with conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device - Google Patents

Mask blank substrate, substrate with conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device

Info

Publication number
SG11202109244UA
SG11202109244UA SG11202109244UA SG11202109244UA SG 11202109244U A SG11202109244U A SG 11202109244UA SG 11202109244U A SG11202109244U A SG 11202109244UA SG 11202109244U A SG11202109244U A SG 11202109244UA
Authority
SG
Singapore
Prior art keywords
substrate
reflective
mask blank
film
semiconductor device
Prior art date
Application number
Other languages
English (en)
Inventor
Hideaki Narahara
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of SG11202109244UA publication Critical patent/SG11202109244UA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
SG11202109244U 2019-03-28 2020-03-24 Mask blank substrate, substrate with conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device SG11202109244UA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019063692 2019-03-28
PCT/JP2020/013139 WO2020196555A1 (ja) 2019-03-28 2020-03-24 マスクブランク用基板、導電膜付き基板、多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法

Publications (1)

Publication Number Publication Date
SG11202109244UA true SG11202109244UA (en) 2021-10-28

Family

ID=72610995

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202109244U SG11202109244UA (en) 2019-03-28 2020-03-24 Mask blank substrate, substrate with conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device

Country Status (6)

Country Link
US (1) US20220121109A1 (enrdf_load_stackoverflow)
JP (1) JP7662511B2 (enrdf_load_stackoverflow)
KR (1) KR20210135993A (enrdf_load_stackoverflow)
SG (1) SG11202109244UA (enrdf_load_stackoverflow)
TW (1) TWI834853B (enrdf_load_stackoverflow)
WO (1) WO2020196555A1 (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220058424A (ko) * 2020-10-30 2022-05-09 에이지씨 가부시키가이샤 Euvl용 유리 기판, 및 euvl용 마스크 블랭크
JP7574766B2 (ja) * 2020-10-30 2024-10-29 Ａｇｃ株式会社 Ｅｕｖｌ用ガラス基板、及びｅｕｖｌ用マスクブランク
JP7574767B2 (ja) * 2020-10-30 2024-10-29 Ａｇｃ株式会社 Ｅｕｖｌ用ガラス基板、及びｅｕｖｌ用マスクブランク
KR102292282B1 (ko) * 2021-01-13 2021-08-20 성균관대학교산학협력단 비등방성 기계적 팽창 기판 및 이를 이용한 크랙 기반 압력 센서
JP7694469B2 (ja) * 2021-07-21 2025-06-18 信越化学工業株式会社 マスクブランクス用基板及びその製造方法

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JP2004029735A (ja) * 2002-03-29 2004-01-29 Hoya Corp 電子デバイス用基板、該基板を用いたマスクブランクおよび転写用マスク、並びにこれらの製造方法、研磨装置および研磨方法
JP2005301304A (ja) 2002-03-29 2005-10-27 Hoya Corp マスクブランク用基板、マスクブランク、および転写用マスク
JP3895651B2 (ja) * 2002-08-12 2007-03-22 Ｈｏｙａ株式会社 不要膜除去装置および不要膜除去方法、並びにフォトマスクブランク製造方法
JP2004302280A (ja) * 2003-03-31 2004-10-28 Hoya Corp マスクブランクス用基板の製造方法、及びマスクブランクスの製造方法、並びに転写マスクの製造方法
JP4958147B2 (ja) 2006-10-18 2012-06-20 Ｈｏｙａ株式会社 露光用反射型マスクブランク及び露光用反射型マスク、多層反射膜付き基板、並びに半導体装置の製造方法
JP5231918B2 (ja) * 2008-09-26 2013-07-10 Ｈｏｙａ株式会社 マスクブランク用基板の製造方法、及び両面研磨装置
JP4728414B2 (ja) * 2009-03-25 2011-07-20 Ｈｏｙａ株式会社 マスクブランク用基板、マスクブランク、フォトマスクおよび半導体デバイスの製造方法
KR20110056209A (ko) * 2009-11-20 2011-05-26 주식회사 에스앤에스텍 블랭크 마스크용 기판, 이를 사용하여 제조된 블랭크 마스크 및 그 제조방법
KR20110057064A (ko) * 2009-11-23 2011-05-31 주식회사 에스앤에스텍 블랭크 마스크용 기판, 이를 사용하여 제조된 블랭크 마스크 및 그 제조방법
MY155168A (en) * 2009-12-11 2015-09-15 Shinetsu Chemical Co Photomask-forming glass substrate and making method
JP5637062B2 (ja) * 2010-05-24 2014-12-10 信越化学工業株式会社 合成石英ガラス基板及びその製造方法
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WO2014050831A1 (ja) * 2012-09-28 2014-04-03 Hoya株式会社 多層反射膜付き基板の製造方法
JP6161913B2 (ja) * 2013-01-31 2017-07-12 Hoya株式会社 マスクブランク用基板の製造方法、多層反射膜付き基板の製造方法、マスクブランクの製造方法、および転写用マスクの製造方法
US9720315B2 (en) * 2013-08-30 2017-08-01 Hoya Corporation Reflective mask blank, method of manufacturing reflective mask blank, reflective mask and method of manufacturing semiconductor device
JP5780350B2 (ja) * 2013-11-14 2015-09-16 大日本印刷株式会社 蒸着マスク、フレーム付き蒸着マスク、及び有機半導体素子の製造方法
JP6256422B2 (ja) * 2014-08-07 2018-01-10 旭硝子株式会社 マスクブランク用ガラス基板
KR102519334B1 (ko) * 2014-12-19 2023-04-07 호야 가부시키가이샤 마스크 블랭크용 기판, 마스크 블랭크 및 이들의 제조 방법, 전사용 마스크의 제조 방법 그리고 반도체 디바이스의 제조 방법
KR102653351B1 (ko) * 2015-06-17 2024-04-02 호야 가부시키가이샤 도전막 부착 기판, 다층 반사막 부착 기판, 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법
JP6613858B2 (ja) 2015-12-08 2019-12-04 Ａｇｃ株式会社 Ｅｕｖ用マスクブランク用のガラス基板、ｅｕｖ用マスクブランクの製造方法、およびｅｕｖ用フォトマスクの製造方法
US10948814B2 (en) * 2016-03-23 2021-03-16 AGC Inc. Substrate for use as mask blank, and mask blank
JP6873758B2 (ja) * 2016-03-28 2021-05-19 Hoya株式会社 基板の製造方法、多層反射膜付き基板の製造方法、マスクブランクの製造方法、及び転写用マスクの製造方法
JP6727879B2 (ja) * 2016-03-30 2020-07-22 Hoya株式会社 マスクブランク用基板の製造方法、多層膜付き基板の製造方法、マスクブランクの製造方法、転写用マスクの製造方法、及び半導体デバイスの製造方法
JP6792901B2 (ja) 2016-03-31 2020-12-02 Hoya株式会社 反射型マスクブランクの製造方法、反射型マスクブランク、反射型マスクの製造方法、反射型マスク、及び半導体装置の製造方法
JP6803186B2 (ja) * 2016-09-30 2020-12-23 Hoya株式会社 マスクブランク用基板、多層反射膜付き基板、マスクブランク、転写用マスク及び半導体デバイスの製造方法

Also Published As

Publication number Publication date
JP7662511B2 (ja) 2025-04-15
US20220121109A1 (en) 2022-04-21
KR20210135993A (ko) 2021-11-16
TW202101534A (zh) 2021-01-01
TWI834853B (zh) 2024-03-11
JPWO2020196555A1 (enrdf_load_stackoverflow) 2020-10-01
WO2020196555A1 (ja) 2020-10-01

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