WO2014050831A1 - 多層反射膜付き基板の製造方法 - Google Patents
多層反射膜付き基板の製造方法 Download PDFInfo
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- WO2014050831A1 WO2014050831A1 PCT/JP2013/075754 JP2013075754W WO2014050831A1 WO 2014050831 A1 WO2014050831 A1 WO 2014050831A1 JP 2013075754 W JP2013075754 W JP 2013075754W WO 2014050831 A1 WO2014050831 A1 WO 2014050831A1
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Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/52—Reflectors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Definitions
- the present invention suppresses the detection of pseudo defects due to the surface roughness of the multilayer reflective film in defect inspection using a highly sensitive defect inspection apparatus, and facilitates the discovery of fatal defects such as foreign matters and scratches.
- Substrate with multilayer reflective film and method for manufacturing the same reflective mask blank from the substrate and method for manufacturing the same, reflective mask obtained from the mask blank, method for manufacturing the same, and method for manufacturing a semiconductor device using the reflective mask About.
- EUV lithography which is an exposure technique using extreme ultraviolet (hereinafter referred to as “EUV”) light
- EUV light refers to light in the wavelength band of the soft X-ray region or the vacuum ultraviolet region, and specifically refers to light having a wavelength of about 0.2 to 100 nm.
- a reflection mask has been proposed as a transfer mask used in this EUV lithography. In such a reflective mask, a multilayer reflective film that reflects exposure light is formed on a substrate, and an absorber film that absorbs exposure light is formed in a pattern on the multilayer reflective film.
- the reflective mask includes an absorber film pattern formed from a reflective mask blank having a substrate, a multilayer reflective film formed on the substrate, and an absorber film formed on the multilayer reflective film by a photolithography method or the like. It is manufactured by forming.
- problems in the lithography process are becoming prominent.
- One of the problems is related to defect information on a substrate with a multilayer reflective film used in a lithography process.
- a substrate with a multilayer reflective film is required to have higher smoothness from the viewpoint of improvement in defect quality associated with recent pattern miniaturization and optical characteristics required for a transfer mask.
- the multilayer reflective film is formed by alternately laminating a high refractive index layer and a low refractive index layer on the surface of the mask blank substrate. Each of these layers is generally formed by sputtering using a sputtering target made of a material for forming these layers.
- ion beam sputtering is performed from the viewpoint that impurities are not easily mixed in the multilayer reflective film and that the ion source is independent and the condition setting is relatively easy. It is preferably implemented, and from the viewpoint of smoothness and surface uniformity of each layer to be formed, at a large angle with respect to the normal of the mask blank substrate main surface (straight line perpendicular to the main surface), that is, the substrate main surface
- the sputtered particles are made to arrive at an angle close to or parallel to the film to form a high refractive index layer and a low refractive index layer.
- Patent Document 1 discloses that when a multilayer reflective film of a reflective mask blank for EUV lithography is formed on a substrate, the substrate is centered on its central axis. It describes that ion beam sputtering is performed while maintaining the absolute value of the angle ⁇ formed by the normal line of the substrate and the sputtered particles incident on the substrate at 35 degrees ⁇ ⁇ ⁇ 80 degrees while rotating.
- defect Size With rapid pattern miniaturization in lithography using ArF excimer laser and EUV light, transmission type masks (also called optical masks) such as binary masks and phase shift masks, and EUV masks that are reflective masks
- the defect size (Defect Size) of the defect becomes finer year by year, and in order to find such a fine defect, the inspection light source wavelength used in the defect inspection is approaching the light source wavelength of the exposure light.
- a high-sensitivity defect inspection apparatus having an inspection light source wavelength of 193 nm is becoming widespread as an optical mask, or a mask blank and substrate defect inspection apparatus that is an original mask, and an EUV mask or an EUV mask that is an original mask.
- the wavelength of the inspection light source is 266 nm (mask substrate / blank defect inspection apparatus “MAGICS 7360” for EUV exposure manufactured by Lasertec), 193 nm (EUV • manufactured by KLA-Tencor) Mask / blank defect inspection apparatus “Teron600 series”), a high-sensitivity defect inspection apparatus with a wavelength of 13.5 nm has become widespread or proposed.
- the multilayer reflective film of the substrate with the multilayer reflective film used in the conventional transfer mask is formed by, for example, the method described in [Background Art], and an attempt is made to reduce the concave defects existing on the substrate. ing.
- “Pseudo-defect” here refers to an acceptable unevenness on the multilayer reflective film that does not affect pattern transfer, and is erroneously determined as a defect when inspected by a high-sensitivity defect inspection apparatus.
- the fatal defects that affect the pattern transfer are buried in the large number of pseudo defects, and the fatal defects cannot be found.
- the number of detected defects exceeds 100,000, for example, on a substrate with a multilayer reflective film having a size of 132 mm ⁇ 132 mm. Unable to inspect for fatal defects. Oversight of fatal defects in defect inspection causes defects in the subsequent mass production process of semiconductor devices, leading to unnecessary labor and economical loss.
- the present invention has a small number of defect detections including pseudo defects even in a high-sensitivity defect inspection machine using light of various wavelengths.
- Substrate with multilayer reflective film capable of reliably detecting fatal defects because the number of detected defects is small and a method for manufacturing the same, a reflective mask blank obtained using the substrate, a method for manufacturing the same, a reflective mask and the method It is an object of the present invention to provide a manufacturing method and a manufacturing method of a semiconductor device using the reflective mask.
- the present inventors have detected that the roughness of a predetermined spatial frequency (or spatial wavelength) component is detected as a pseudo defect with respect to the inspection light source wavelength of the high-sensitivity defect inspection apparatus. I found it easy. Therefore, among the roughness (unevenness) components of the multilayer reflective film, the spatial frequency of the roughness component that the high-sensitivity defect inspection apparatus erroneously determines as a pseudo defect is specified, and the amplitude intensity (power spectral density) at the spatial frequency is specified. ), It is possible to suppress the detection of pseudo defects in the defect inspection and to make the fatal defects noticeable.
- the inventors of the present invention have found that the power spectral density in such a multilayer reflective film can be managed by the film forming conditions of the multilayer reflective film. Further, according to the film forming conditions, the inspection light source wavelength is 13 It has been found that the background level (BGL) in defect inspection using a highly sensitive defect inspection apparatus of .5 nm can be reduced and detection of pseudo defects is suppressed, and the present invention has been completed.
- the background level (BGL) in defect inspection using a highly sensitive defect inspection apparatus of .5 nm can be reduced and detection of pseudo defects is suppressed, and the present invention has been completed.
- Configuration 1 of the present invention is a substrate with a multilayer reflective film having a multilayer reflective film in which a high refractive index layer and a low refractive index layer are alternately laminated on a main surface on a side where a transfer pattern of a mask blank substrate is formed.
- the multilayer reflective film is formed on the mask blank substrate by ion beam sputtering, and the incident angle of the sputtered particles of the layer forming material in the ion beam sputtering is set to the film surface of the multilayer reflective film.
- Configuration 2 of the present invention is the method for manufacturing a substrate with a multilayer reflective film according to Configuration 1, wherein the incident angle is not less than 0 degrees and not more than 30 degrees with respect to the normal of the main surface.
- the power spectral density is in a suitable range, and various high-sensitivity defect inspection apparatuses are provided. It is possible to suppress the number of defect detections including pseudo defects in the defect inspection that is used, thereby making it possible to reveal fatal defects.
- Configuration 3 of the present invention further includes a step of forming a protective film on the multilayer reflective film, and a spatial frequency of 1 ⁇ m ⁇ 1 obtained by measuring an area of 1 ⁇ m ⁇ 1 ⁇ m on the surface of the protective film with an atomic force microscope.
- the power spectrum density at 10 ⁇ m ⁇ 1 or less is 20 nm 4 or less
- the power spectrum density at a spatial frequency of 10 ⁇ m ⁇ 1 or more and 100 ⁇ m ⁇ 1 or less is 10 nm 4 or less. It is a manufacturing method of the board
- the third aspect by forming a protective film on the multilayer reflective film, it is possible to suppress damage to the multilayer reflective film surface when manufacturing a transfer mask (EUV mask). Thus, the reflectance characteristics of the multilayer reflective film are further improved.
- EUV mask transfer mask
- the power spectral density of the protective film within a certain range, for example, defects on the surface of the protective film using a high-sensitivity defect inspection apparatus that uses light of 266 nm, 193 nm, or 13.5 nm as the inspection light source wavelength. The number of detected defects including pseudo defects in the inspection can be greatly suppressed, and the fatal defects can be made more prominent.
- (Configuration 4) Configuration of the present invention 4 the mask main surface on the side where a transfer pattern of the blank substrate is formed 1 [mu] m ⁇ spatial frequency 1 [mu] m obtained a 1 [mu] m area of the as measured by atomic force microscopy -1 10 [mu] m -1 or less 4.
- the smoothness of the multilayer reflective film is further improved, and defects including pseudo defects The number of detections can be greatly suppressed.
- the mask blank substrate is subjected to surface processing by EEM (Elastic Emission Machining) and / or catalyst-based etching: CARE (CAtalyst-Referred Etching). It is a manufacturing method of a board
- the above power spectrum density range can be suitably achieved by surface processing the mask blank substrate by one or both of the surface processing methods of EEM and CARE.
- Configuration 6 of the present invention is an absorption that becomes a transfer pattern on the multilayer reflective film or the protective film of the multilayer reflective film-coated substrate manufactured by the method for manufacturing a multilayer reflective film-coated substrate according to any one of Configurations 1 to 5. It is a manufacturing method of a reflective mask blank characterized by forming a body film.
- the configuration 6 in the reflective mask blank, the number of detected defects including pseudo defects in the defect inspection using the high-sensitivity defect inspection apparatus using light of 266 nm, 193 nm, or 13.5 nm as the inspection light source wavelength is suppressed. In addition, a fatal defect can be revealed.
- the absorber film in the reflective mask blank manufactured by the reflective mask blank manufacturing method according to the sixth aspect is patterned, and the absorber pattern is formed on the multilayer reflective film or the protective film.
- the number of defect detections including pseudo defects in the defect inspection using the high-sensitivity defect inspection apparatus can be suppressed, and further, fatal defects can be made obvious. .
- Configuration 8 of the present invention is a substrate with a multilayer reflective film having a multilayer reflective film in which a high refractive index layer and a low refractive index layer are alternately laminated on the main surface of the mask blank substrate on which the transfer pattern is formed.
- a is, the film surface of the multilayer reflective film coated substrate, the power spectral density in the spatial frequency 1 [mu] m -1 or 10 [mu] m -1 or less obtained by measuring an area of 1 [mu] m ⁇ 1 [mu] m with an atomic force microscope 20 nm 4 below
- the power spectral density at a spatial frequency of 10 ⁇ m ⁇ 1 to 100 ⁇ m ⁇ 1 is 10 nm 4
- the surface roughness of the film surface at a spatial frequency of 10 ⁇ m ⁇ 1 to 100 ⁇ m ⁇ 1 is a root mean square roughness. (Rms) is less than 0.13 nm.
- a high wavelength using a UV laser with a wavelength of 266 nm, an ArF excimer laser with 193 nm, or EUV light with 13.5 nm is used.
- the number of detected defects including pseudo defects in the defect inspection using the sensitivity defect inspection system You can win, thereby making it possible to manifestation of critical defects.
- Configuration 9 of the present invention is that the substrate with a multilayer reflective film has a protective film on the multilayer reflective film, and the spatial frequency obtained by measuring an area of 1 ⁇ m ⁇ 1 ⁇ m on the surface of the protective film with an atomic force microscope
- the power spectral density at 1 ⁇ m ⁇ 1 or more and 10 ⁇ m ⁇ 1 or less is 20 nm 4 or less
- the power spectral density at a spatial frequency of 10 ⁇ m ⁇ 1 or more and 100 ⁇ m ⁇ 1 or less is 10 nm 4 or less
- the protective film since the protective film is provided on the multilayer reflective film, damage to the multilayer reflective film surface at the time of manufacturing the transfer mask (EUV mask) can be suppressed.
- the reflectance characteristics of the multilayer reflective film are further improved.
- by controlling the power spectral density of the protective film within a certain range for example, defects on the surface of the protective film using a high-sensitivity defect inspection apparatus that uses light of 266 nm, 193 nm, or 13.5 nm as the inspection light source wavelength.
- the number of detected defects including pseudo defects in the inspection can be greatly suppressed, and the fatal defects can be made more prominent.
- a reflective mask blank including an absorber film serving as a transfer pattern on the multilayer reflective film or the protective film of the multilayer reflective film-coated substrate according to the eighth or ninth aspect.
- the configuration 10 in the reflective mask blank, the number of detected defects including pseudo defects in the defect inspection using the high-sensitivity defect inspection apparatus that uses light of 266 nm, 193 nm, or 13.5 nm as the inspection light source wavelength is suppressed. In addition, a fatal defect can be revealed.
- the structure 11 of the present invention has an absorber pattern obtained by patterning the absorber film in the reflective mask blank according to the structure 10 on the multilayer reflective film or the protective film. It is a type mask.
- the number of detected defects including pseudo defects in the defect inspection using the high-sensitivity defect inspection apparatus can be suppressed, and further, fatal defects can be revealed. .
- a semiconductor device comprising a step of performing a lithography process using an exposure apparatus using the reflective mask according to the eleventh aspect and forming a transfer pattern on a transfer target. It is a manufacturing method.
- a reflective mask that excludes fatal defects such as foreign matters and scratches, and the number of detected defects including pseudo defects in the inspection is greatly increased. Therefore, unnecessary costs are reduced. Therefore, a resist film formed on a transfer target such as a semiconductor substrate has no defect in a transfer pattern such as a circuit pattern transferred using the mask, and has a fine and high-precision transfer pattern. The device can be produced economically advantageously.
- a substrate with a multilayer reflective film and a method of manufacturing the same capable of reliably detecting fatal defects because the number of detected defects including pseudo defects is small. Furthermore, a reflective mask blank obtained using the substrate and a manufacturing method thereof, a reflective mask and a manufacturing method thereof, and a manufacturing method of a semiconductor device using the reflective mask are also provided.
- FIG. 2A is a perspective view showing a mask blank substrate 10 used for a substrate with a multilayer reflective film according to an embodiment of the present invention.
- FIG. 2B is a schematic cross-sectional view showing the mask blank substrate 10 in the present embodiment.
- It is a cross-sectional schematic diagram which shows an example of a structure of the reflective mask blank which concerns on one Embodiment of this invention.
- It is a cross-sectional schematic diagram which shows an example of the reflective mask which concerns on one Embodiment of this invention.
- FIG. It is a figure which shows the result of having measured the film
- FIG. 1 is a schematic diagram showing a substrate 20 with a multilayer reflective film of the present embodiment.
- the substrate 20 with a multilayer reflective film of this embodiment is manufactured by forming a multilayer reflective film 21 on the main surface of the mask blank substrate 10 on the side where the transfer pattern is formed.
- the multilayer reflective film 21 provides a function of reflecting light in a reflective mask for lithography, and has a multilayer film structure in which elements having different refractive indexes are periodically stacked.
- the number of detected defects including pseudo defects is suppressed even in the inspection using the defect inspection apparatus that uses light with a very short wavelength of 13.5 nm as described above. ing. Therefore, the substrate 20 with a multilayer reflective film is suitable for EUV lithography in which it may be necessary to use 13.5 nm EUV light for defect inspection.
- the material of the multilayer reflective film 21 is not particularly limited as long as it reflects light, particularly EUV light, but the reflectivity by itself is usually 65% or more, and the upper limit is usually 73%.
- the multilayer reflective film 21 includes 40 thin films (high refractive index layer) made of a high refractive index material and 40 thin films made of a low refractive index material (low refractive index layer) alternately. A structure in which about 60 cycles are laminated can be adopted.
- the multilayer reflective film 21 for EUV light having a wavelength of 13 to 14 nm is preferably a Mo / Si periodic laminated film in which Mo films and Si films are alternately laminated for about 40 periods.
- Ru / Si periodic multilayer films, Mo / Be periodic multilayer films, Mo compounds / Si compound periodic multilayer films, Si / Nb periodic multilayer films, Si / Mo / Ru Examples include periodic multilayer films, Si / Mo / Ru / Mo periodic multilayer films, and Si / Ru / Mo / Ru periodic multilayer films.
- magnetron sputtering or ion beam sputtering is used to form a multilayer reflective film.
- ion beam sputtering is used to form the multilayer reflective film 21
- a high refractive index material target and a low refractive index material target are used, and a transfer pattern of the mask blank substrate 10 is formed using these sputtered particles. It is characterized in that it is made incident at a predetermined incident angle with respect to the main surface normal on the side to be formed.
- the light is incident at an incident angle such that the power spectrum density (Power Density: PSD) in a specific spatial frequency region on the surface of the multilayer reflective film 21 is in a specific range.
- PSD Power Density
- the film surface of the multilayer reflective film 21 is the contact between the mask blank substrate 10 and the multilayer reflective film 21, which is the uppermost layer of the multilayer reflective film 21 (the layer on the side opposite to the layer in contact with the mask blank substrate 10). A surface parallel to the surface.
- the surface roughness of the multilayer reflective film 21 at a spatial frequency of 10 ⁇ m ⁇ 1 or more and 100 ⁇ m ⁇ 1 or less is a root mean square roughness (Rms) from the viewpoint of improving the reflectance characteristics of the multilayer reflective film with respect to EUV light. ) Is preferably less than 0.13 nm.
- PSD Power Density: PSD
- Rms parameters indicating the surface morphology of the multilayer reflective film 21 in the multilayer reflective film-coated substrate 20 of the present invention
- the unevenness on the film surface obtained by measuring the film surface of the multilayer reflective film 21 with, for example, an atomic force microscope is Fourier-transformed so that the unevenness can be expressed by amplitude intensity at a predetermined spatial frequency.
- Nx and Ny are the numbers of data in the x and y directions.
- u 0, 1, 2,... Nx ⁇ 1
- v 0, 1, 2,... Ny ⁇ 1
- the spatial frequency f is given by the following equation (3).
- the power spectral density PSD at this time is given by the following equation (4).
- This power spectrum analysis is excellent in that the change in the surface state of the multilayer reflective film 21 can be grasped not only as a simple change in height but also as a change in the spatial frequency. This is a technique for analyzing the influence of visual reaction on the surface of the multilayer reflective film.
- the substrate 20 with a multilayer reflective film of the present invention has a spatial frequency of 1 ⁇ m ⁇ obtained by measuring an area of 1 ⁇ m ⁇ 1 ⁇ m on the film surface of the multilayer reflective film 21 with an atomic force microscope.
- the PSD in the region of 1 to 10 ⁇ m ⁇ 1 is 20 nm 4 or less
- the PSD at the spatial frequency of 10 ⁇ m ⁇ 1 to 100 ⁇ m ⁇ 1 is 10 nm 4 or less, preferably 8 nm 4 or less.
- the 1 ⁇ m ⁇ 1 ⁇ m region is the central region of the film surface of the multilayer reflective film 21.
- the center is the intersection of the diagonal lines of the rectangle. That is, the intersection and the center in the region (the center of the region is the same as the center of the film surface) coincide.
- the high-sensitivity defect inspection apparatus that uses light having a wavelength of 266 nm, 193 nm, 13.5 nm as the inspection light source wavelength and the above spatial frequency region of 1 ⁇ m ⁇ 1 or more and 10 ⁇ m ⁇ 1 and / or 10 ⁇ m ⁇ 1 or more and 100 ⁇ m ⁇ 1 or less. Since it is easy to erroneously detect the roughness of the spatial frequency region as a pseudo-defect, the number of detected defects including pseudo-defects is suppressed by suppressing the roughness (PSD which is the amplitude intensity) in these regions to a certain value or less. This makes it possible to reliably detect a fatal defect that must not be detected.
- PSD the roughness
- the power spectral density in a specific spatial frequency region on the surface of the multilayer reflective film 21 of the multilayer reflective film-coated substrate 20 to a specific range, for example, a mask sub for EUV exposure manufactured by Lasertec Corporation.
- the defect inspection by the defect inspection apparatus “Actinic” the number of detected defects including pseudo defects can be greatly suppressed. This makes it possible to make the fatal defect conspicuous. If a fatal defect is detected, it is removed, or the mask is designed so that the absorber pattern 27 is placed on the fatal defect in a reflective mask 40 described later.
- Various treatments can be applied.
- the inspection light source wavelength is not limited to 266 nm, 193 nm, and 13.5 nm.
- As the inspection light source wavelength 532 nm, 488 nm, 364 nm, and 257 nm may be used.
- the multilayer reflective film 21 is formed by specific ion beam sputtering.
- the multilayer reflective film 21 is the Mo / Si periodic multilayer film described above
- an Si film having a thickness of about several nanometers is first formed on the mask blank substrate 10 using an Si target by ion beam sputtering, and then Then, a Mo film having a thickness of several nanometers is formed using a Mo target, and this is set as one period, and the multilayer reflection film 21 is formed by laminating 40 to 60 periods.
- the substrate 10 for a mask blank has a large angle with respect to the normal of the main surface (a straight line orthogonal to the main surface), that is, the substrate 10.
- the high refractive index layer and the low refractive index layer were formed by causing the sputtered particles to arrive at an angle close to or parallel to the main surface.
- the multilayer reflective film to be formed can achieve smoothness enough to suppress the number of detected defects including pseudo defects in the defect inspection using the above-described high-sensitivity defect inspection apparatus. There wasn't.
- the present inventors conducted experiments at various incident angles with respect to the normal of the main surface of the mask blank substrate 10 apart from the technical common sense in terms of the smoothness and surface uniformity of the multilayer reflective film.
- the sputtered particles of the high-refractive index material and the low-refractive index material are incident at a small angle with respect to the normal line, for example, an angle of 0 ° to 30 °, preferably 0 ° to 20 °. It has been found that a specific PSD in a specific spatial frequency region can be achieved, thereby suppressing the number of detected defects including the above-mentioned pseudo defects, and making fatal defects noticeable.
- BGL background level
- the roughness (Rms) is less than 0.13 nm, preferably 0.12 nm or less.
- Rms (Root means square) is a parameter defined by Equation (1) in [Equation 4] to be described later, and an atomic force microscope DI Dimension 3100 (manufactured by Veeco) has a spatial frequency of 10 ⁇ m ⁇ 1 or more.
- the surface roughness (Rms) obtained by extracting the roughness component at 100 ⁇ m ⁇ 1 or less.
- a protective film 22 (see FIG. 3) is formed to protect the multilayer reflective film 21 from dry etching or wet cleaning in the manufacturing process of the reflective mask for EUV lithography. You can also Thus, the form which has the multilayer reflective film 21 and the protective film 22 on the board
- Examples of the material of the protective film 22 include Ru, Ru- (Nb, Zr, Y, B, Ti, La, Mo), Si- (Ru, Rh, Cr, B), Si, Zr, Nb. , La, B, and the like can be used, but among these, when a material containing ruthenium (Ru) is applied, the reflectance characteristics of the multilayer reflective film become better. Specifically, Ru, Ru- (Nb, Zr, Y, B, Ti, La, Mo) are preferable. Such a protective film is particularly effective when an absorber film described later is made of a Ta-based material and the absorber film is patterned by dry etching with a Cl-based gas.
- the substrate 20 with a multilayer reflective film is used in the high-sensitivity defect inspection apparatus using the 266 nm UV laser, the 193 nm ArF excimer laser, or the 13.5 nm EUV light as the above-described inspection light source wavelength.
- the number of detected defects including pseudo defects can be significantly reduced.
- the surface of the protective film 22 is a surface opposite to the surface of the protective film 22 in contact with the multilayer reflective film 21 and is a surface parallel to the main surface of the mask blank substrate 10.
- the surface roughness of the protective film 22 at a spatial frequency of 10 ⁇ m ⁇ 1 or more and 100 ⁇ m ⁇ 1 or less is the root mean square roughness (Rms) from the viewpoint of enhancing the reflectance characteristics of the multilayer reflective film 21 for EUV light. ) Is preferably less than 0.13 nm.
- the protective film 22 is formed by ion beam sputtering or DC so that the protective film 22 is deposited obliquely with respect to the normal of the main surface of the mask blank substrate 10 after the multilayer reflective film 21 is formed. It can be formed by performing a sputtering method or an RF sputtering method.
- a back surface conductive film 23 (see FIG. 3) is provided on the surface of the mask blank substrate 10 opposite to the surface in contact with the multilayer reflective film 21 for the purpose of electrostatic chucking. It can also be formed.
- the multilayer reflective film 21 and the protective film 22 are provided on the side on which the transfer pattern on the mask blank substrate 10 is formed, and the back surface conductive film 23 is provided on the surface opposite to the surface in contact with the multilayer reflective film 21.
- a form having the above is also included in the substrate with a multilayer reflective film in the present invention.
- the electrical characteristics (sheet resistance) required for the back conductive film 23 are usually 100 ⁇ / ⁇ or less.
- the formation method of the back surface conductive film 23 is well known, and can be formed by using, for example, a target of a metal such as Cr or Ta or an alloy by ion beam sputtering, DC sputtering, or RF sputtering.
- the back surface is formed on the back surface opposite to the main surface.
- the present invention is not limited to such an order.
- the protective film 22 may be further formed to manufacture the substrate 20 with a multilayer reflective film.
- an underlayer may be formed between the mask blank substrate 10 and the multilayer reflective film 21.
- the underlayer can be formed for the purpose of improving the smoothness of the main surface of the substrate 10, the purpose of reducing defects, the purpose of enhancing the reflectivity of the multilayer reflective film 21, and the purpose of correcting the stress of the multilayer reflective film 21.
- FIG. 2A is a perspective view showing the mask blank substrate 10 of the present embodiment.
- FIG. 2B is a schematic cross-sectional view showing the mask blank substrate 10 of the present embodiment.
- the mask blank substrate 10 (or simply referred to as the substrate 10) is a rectangular plate-like body, and has two opposing main surfaces 2 and an end surface 1.
- the two opposing main surfaces 2 are the upper surface and the lower surface of this plate-like body, and are formed so as to oppose each other. At least one of the two opposing main surfaces 2 is a main surface on which a transfer pattern is to be formed.
- the end face 1 is a side face of the plate-like body and is adjacent to the outer edge of the opposing main surface 2.
- the end surface 1 has a planar end surface portion 1d and a curved end surface portion 1f.
- the planar end surface portion 1d is a surface that connects the side of one opposing main surface 2 and the side of the other opposing main surface 2, and includes a side surface portion 1a and a chamfered slope portion 1b.
- the side surface portion 1a is a portion (T surface) substantially perpendicular to the opposing main surface 2 in the planar end surface portion 1d.
- the chamfered slope portion 1b is a chamfered portion (C surface) between the side surface portion 1a and the opposing main surface 2, and is formed between the side surface portion 1a and the opposing main surface 2.
- the curved end surface portion 1f is a portion (R portion) adjacent to the vicinity of the corner portion 10a of the substrate 10 when the substrate 10 is viewed in plan, and includes a side surface portion 1c and a chamfered slope portion 1e.
- the plan view of the substrate 10 refers to, for example, viewing the substrate 10 from a direction perpendicular to the opposing main surface 2.
- substrate 10 is the intersection vicinity of two sides in the outer edge of the opposing main surface 2, for example. The intersection of two sides may be the intersection of the extension lines of the two sides.
- the curved end surface portion 1 f is formed in a curved shape by rounding the corner 10 a of the substrate 10.
- the main surface on the side where the transfer pattern is formed that is, the reflective mask blank 30 as will be described later, the multilayer reflective film 21, the protective film 22, and the absorber.
- the main surface on the side where the film 24 is formed preferably has the following power spectral density, surface roughness (Rmax, Rms) and flatness.
- the mask blank substrate 10 in the present embodiment 1 [mu] m -1 or 10 [mu] m -1 or less of the area obtained by measuring an area of 1 [mu] m ⁇ 1 [mu] m of the main surface on which the transfer pattern is formed by an atomic force microscope
- the PSD is preferably 10 nm 4 or less.
- a mask substrate / blank defect inspection apparatus for EUV exposure manufactured by Lasertec Corporation.
- Defects in the multilayer reflective film 21 by “MAGICS 7360”, reticles manufactured by KLA-Tencor, optical mask / blank, UV mask / blank defect inspection device “Teron 600 series”, and defect inspection device “Actinic” using EUV light In the inspection, it becomes easy to greatly reduce the number of detected defects including pseudo defects, and the number of detected defects including pseudo defects can be suppressed also in the defect inspection of the mask blank substrate 10 itself.
- Rms (Root means square) which is a representative surface roughness index in the mask blank substrate 10 is a root mean square roughness, and is a square root of a value obtained by averaging the squares of deviations from the average line to the measurement curve. is there. That is, Rms is expressed by the following formula (1).
- Rmax which is a representative surface roughness index, is the maximum height of the surface roughness, and is the sum of the absolute value of the maximum value of the peak of the roughness curve and the maximum value of the depth of the valley. is there.
- Rms can be obtained by measuring a 1 ⁇ m ⁇ 1 ⁇ m region of the main surface of the mask blank substrate 10 with an atomic force microscope.
- Rmax and Rms are defined in Japanese Industrial Standard JIS B0601 (2001).
- the above-mentioned root mean square roughness (Rms) is preferably 0.12 nm or less, and more preferably 0.10 nm or less.
- the maximum height (Rmax) is preferably 1.2 nm or less, and more preferably 1.0 nm or less.
- the root mean square roughness (Rms) and the maximum height (Rmax) It is preferable to manage both parameters.
- the preferred surface roughness of the mask blank substrate 10 has a root mean square roughness (Rms) of 0.12 nm or less and a maximum height (Rmax) of 1.2 nm or less, more preferably The root mean square roughness (Rms) is 0.10 nm or less and the maximum height (Rmax) is 1.0 nm or less.
- the mask blank substrate 10 is preferably surface-treated so that the main surface on the side where the transfer pattern is formed has high flatness from the viewpoint of at least pattern transfer accuracy and position accuracy.
- the flatness is preferably 0.1 ⁇ m or less, particularly preferably 0.05 ⁇ m, in the main surface 142 mm ⁇ 142 mm region on the side where the transfer pattern of the substrate 10 is formed. It is as follows.
- the main surface opposite to the side on which the transfer pattern is formed is a surface to be electrostatically chucked when being set in the exposure apparatus, and in a 142 mm ⁇ 142 mm region, the flatness is 1 ⁇ m or less, particularly preferably. 0.5 ⁇ m or less.
- the mask blank substrate preferred in the present invention described above is obtained by measuring the main surface on the side where the transfer pattern is formed by measuring a predetermined surface form, that is, a 1 ⁇ m ⁇ 1 ⁇ m region of the main surface with an atomic force microscope.
- power spectral density in the spatial frequency 1 [mu] m -1 or 10 [mu] m -1 or less for it can be produced by surface treatment so that 10 nm 4 or less.
- the surface treatment method is known and can be employed without any particular limitation in the present invention.
- MRF magnetic viscoelastic fluid polishing
- CMP chemical mechanical polishing
- GCIB gas cluster ion beam etching
- DCP dry chemical planarization
- CMP uses a small-diameter polishing pad and a polishing agent (containing abrasive grains such as colloidal silica) and controls the residence time of the contact portion between the small-diameter polishing pad and the workpiece (mask blank substrate).
- a polishing agent containing abrasive grains such as colloidal silica
- This is a local processing method for polishing a convex portion of the workpiece surface.
- GCIB generates gas cluster ions by ejecting a gaseous reactive substance (source gas) at normal temperature and pressure while adiabatically expanding in a vacuum apparatus, and ionizing it by irradiating it with electrons.
- This is a local processing method in which cluster ions are accelerated by a high electric field to form a gas cluster ion beam, which is irradiated to a workpiece to be etched.
- DCP is a local processing method in which dry etching is locally performed by locally performing plasma etching and controlling the amount of plasma etching according to the degree of convexity.
- any material may be used for the mask blank substrate as long as it has low thermal expansion characteristics.
- SiO 2 —TiO 2 glass having characteristics of low thermal expansion binary system (SiO 2 —TiO 2 ) and ternary system (SiO 2 —TiO 2 —SnO 2 etc.)
- SiO 2 —Al 2 O A so-called multicomponent glass such as a 3- Li 2 O-based crystallized glass can be used.
- a substrate such as silicon or metal can also be used. Examples of the metal substrate include Invar alloy (Fe—Ni alloy).
- a multi-component glass material is used, but compared with synthetic quartz glass used for a transmission type mask blank substrate. In other words, it is difficult to obtain high smoothness.
- a thin film made of a metal, an alloy, or a material containing at least one of oxygen, nitrogen, and carbon in any one of them is formed on a substrate made of a multicomponent glass material. And the surface of the surface roughness of the said range can be formed comparatively easily by carrying out mirror surface polishing and surface treatment of such a thin film surface.
- Ta tantalum
- an alloy containing Ta or a Ta compound containing at least one of oxygen, nitrogen, and carbon in any of these is preferable.
- the Ta compound for example, TaB, TaN, TaO, TaON, TaCON, TaBN, TaBO, TaBON, TaBCON, TaHf, TaHfO, TaHfN, TaHfON, TaHfCON, TaSi, TaSiO, TaSiN, TaSiON, TaSiCON, etc. may be used. it can.
- the thin film preferably has an amorphous structure from the viewpoint of high smoothness on the surface of the thin film.
- the crystal structure of the thin film can be measured by an X-ray diffractometer (XRD).
- a preferable method for manufacturing a mask blank substrate in the present invention includes a surface processing step of performing surface processing so as to obtain a surface form having a predetermined PSD in the predetermined spatial frequency region.
- the surface processing step is not particularly limited as long as the predetermined PSD in the spatial frequency domain can be achieved.
- an intermediate spatial frequency region (1 ⁇ 10 ⁇ 2 ⁇ m ⁇ 1 or more and 1 ⁇ m or more) longer than the high spatial frequency region which is the spatial frequency region (1 ⁇ m ⁇ 1 or more). ⁇ 1 or less) is preferably reduced.
- the non-contact surface shape measuring instrument e.g., NewView6300 of Zygo Corp.
- This region is the center of the main surface of the mask blank substrate, as in the case of measuring a 1 ⁇ m ⁇ 1 ⁇ m region with an atomic force microscope.
- the high spatial frequency domain roughness reduction process generally requires finer roughness adjustment, and the intermediate spatial frequency domain roughness reduction process work also affects the high spatial frequency domain roughness.
- EEM Elastic Emission Machining
- CARE Catalyst-Referred Etching
- EEM is useful in the intermediate spatial frequency domain roughness reduction process
- CARE is useful in the high spatial frequency domain roughness reduction process.
- EEM brings fine powder particles of 0.1 ⁇ m or less into contact with the work piece (mask blank substrate) under almost no load condition, and at that time, an interaction that occurs at the interface between the fine powder particles and the work piece (a kind)
- a workpiece In order to make contact in the unloaded state, for example, a workpiece is placed in water, fine powder particles are dispersed in the water, and a rotating body such as a wheel is provided in the vicinity of the workpiece surface of the workpiece. It is arranged and rotated. By this rotational motion, a flow called a high-speed shear flow is generated between the workpiece surface and the rotating body, and fine powder particles act on the workpiece surface.
- the size of the rotating body is appropriately selected according to the size of the workpiece.
- the shape of the rotating body is appropriately selected according to the region on the surface of the workpiece to be preferentially contacted (reacted) with the processing liquid. When it is desired to contact the machining liquid locally, the shape is spherical or linear. When it is desired to contact the machining liquid preferentially in a relatively wide area, the shape is cylindrical.
- the material of the rotating body should be resistant to the machining fluid and have a low elasticity as much as possible.
- High elasticity (relatively soft) is not preferable because it may cause shape deformation during rotation or the shape may become unstable, which may deteriorate the processing accuracy.
- polyurethane, glass, ceramics, or the like can be used as the material of the rotating body.
- the rotational speed of the rotating body is appropriately selected depending on the PSD to be achieved, but is usually 50 to 1000 rpm, and the polishing time by the rotating body is usually 60 to 300 minutes.
- a workpiece is arranged perpendicularly to a rotating body, and a predetermined load is applied to the rotated rotating body, thereby adjusting a gap between the workpiece and the rotating body. it can.
- the rotating body is scanned in parallel with the rotation axis.
- it is moved by a certain distance parallel to the rotating body and scanned in the reverse direction. By repeating these operations, the entire area can be processed.
- the load range is appropriately selected depending on the PSD desired to be achieved in the same manner as described above, but is usually set in the range of 0.5 kg to 5 kg.
- Examples of the fine powder particles used in EEM include cerium oxide, silica (SiO 2 ), colloidal silica, zirconium oxide, manganese dioxide, aluminum oxide, and the like.
- the workpiece is a glass substrate
- the fine powder particles it is preferable to use zirconium oxide, aluminum oxide, colloidal silica or the like.
- the average particle diameter of the fine powder particles is preferably 100 nm or less (note that the average particle diameter is obtained by measuring an image 15 to 105 ⁇ 10 3 times using an SEM (scanning electron microscope). ).
- fine powder particles may be suspended in a solvent in which the workpiece is disposed to form a processing liquid, which may be brought into contact with the workpiece.
- water in which fine powder particles are dispersed and either one of an acidic aqueous solution and an alkaline aqueous solution may be used as the processing liquid, or any one of the aqueous solutions may be used as the processing liquid.
- water pure water and ultrapure water are preferable.
- the acidic aqueous solution examples include aqueous solutions of sulfuric acid, hydrochloric acid, hydrofluoric acid, silicic acid, and the like.
- the polishing rate is improved.
- the glass substrate may be roughened, so an acid and a concentration that do not rough the glass substrate are selected as appropriate.
- the alkaline aqueous solution examples include aqueous solutions of potassium hydroxide, sodium hydroxide and the like.
- aqueous solutions of potassium hydroxide, sodium hydroxide and the like When an alkaline aqueous solution is included in the processing liquid in non-contact polishing, the polishing rate is improved.
- the alkaline aqueous solution is adjusted within a range in which the abrasive grains contained in the processing liquid do not dissolve, and is preferably adjusted so that the pH of the processing liquid is 9 to 12.
- the processing principle of CARE is that the workpiece (mask blank substrate) and the catalyst are arranged in the treatment liquid, or the treatment liquid is supplied between the workpiece and the catalyst, and the workpiece and the catalyst are separated.
- the workpiece is processed by the active species generated from the molecules in the treatment liquid that are brought into contact with each other and adsorbed on the catalyst at that time.
- the processing principle is that the treatment liquid is water, the workpiece and the catalyst are contacted in the presence of water, and the catalyst and the workpiece surface The product of hydrolysis is removed from the surface of the workpiece and processed by, for example, relative movement.
- the workpiece is disposed in a treatment liquid that does not normally exhibit solubility with respect to the workpiece, and a metal such as platinum, gold, iron, and molybdenum, an alloy such as SUS, or the like
- a metal such as platinum, gold, iron, and molybdenum, an alloy such as SUS, or the like
- the reference surface of a surface plate having a processing reference surface made of a ceramic-based solid catalyst is placed in contact with or in close proximity to the processing surface of the workpiece (or a processing liquid is supplied between the workpiece and the catalyst).
- the workpiece is processed by causing the workpiece to react with the active species generated on the surface of the processing reference surface by relatively moving the workpiece and the processing reference surface in the processing liquid.
- a treatment solution in which molecules containing halogen are dissolved may be used.
- hydrogen halide is preferable as the molecule containing halogen, but molecules having bonds such as C—F, SF, NF, C—Cl, S—Cl, N—Cl can also be used. It is.
- hydrohalic acid an aqueous solution in which hydrogen halide molecules are dissolved
- the halogen include fluorine (F), chlorine (Cl), bromine (Br), and iodine (I), but the chemical reactivity decreases as the atomic number increases.
- hydrofluoric acid HF aqueous solution
- glass SiO 2
- Ti contained in the low expansion glass is selectively required in the HCl aqueous solution. In consideration of these factors and processing time, it is preferable to use hydrohalic acid adjusted to an appropriate concentration.
- a metal such as platinum, gold, iron, molybdenum, an alloy such as SUS, or a ceramic solid catalyst that oxidizes hydrogen and promotes a reaction of extracting hydrogen ions and atoms is used.
- Active species are generated only on the processing reference surface, and this active species deactivates immediately after leaving the processing reference surface of the surface plate.Therefore, there is almost no side reaction and the principle of surface processing is mechanical polishing. Since it is a chemical reaction, there is very little damage to the workpiece, excellent smoothness can be achieved, and roughness in the high spatial frequency region can be effectively reduced.
- the mask blank substrate is a glass substrate
- a transition metal such as platinum, gold, silver, copper, molybdenum, nickel, or chromium
- the hydrolysis reaction proceeds, and CARE occurs in water.
- surface processing of the substrate can be performed. From the viewpoint of cost and processing characteristics, it is preferable to carry out CARE in this way.
- the processing reference surface made of the solid catalyst on the surface plate described above is usually formed by depositing a solid catalyst on a predetermined pad.
- a solid catalyst on a predetermined pad.
- a predetermined pad for example, rubber
- the workpiece and the workpiece reference surface are moved relative to each other in the processing liquid to cause the active species generated on the surface of the workpiece reference surface to react with the workpiece, thereby to change the workpiece surface.
- Surface processing is performed by removing.
- processing conditions of CARE can be set, for example, within the range of platen rotation speed: 5 to 200 rpm, workpiece rotation speed: 5 to 200 rpm, processing pressure: 10 hPa to 1000 hPa, and processing time: 5 to 120 minutes.
- the CARE processing apparatus 100 includes a processing tank 124, a catalyst surface plate 126 rotatably disposed in the processing tank 124, and a workpiece 128 (mask blank substrate) with its surface (processing surface) facing downward.
- a substrate holder 130 for detachably holding the substrate.
- the substrate holder 130 is connected to the tip end of a rotary shaft 132 that is movable up and down and is provided at a position that is parallel and eccentric to the rotational axis of the catalyst surface plate 126.
- platinum 142 having a predetermined thickness as a solid catalyst is formed on the surface of the base material 140 of a rigid material made of stainless steel, for example.
- the solid catalyst may be bulk, but may be configured such that platinum 142 is formed on a base material having elasticity, such as a fluorine-based rubber material, which is inexpensive and has good shape stability.
- a heater 170 as a temperature control mechanism for controlling the temperature of the workpiece 128 held by the holder 130 is embedded in the rotating shaft 132 inside the substrate holder 130.
- a processing liquid supply nozzle 174 that supplies a processing liquid (such as pure water) controlled to a predetermined temperature by a heat exchanger 172 as a temperature control mechanism to the inside of the processing tank 124 is disposed.
- a fluid flow path 176 as a temperature control mechanism for controlling the temperature of the catalyst surface plate 126 is provided inside the catalyst surface plate 126.
- the CARE processing method by the CARE processing apparatus 100 is as follows. A processing liquid is supplied from the processing liquid supply nozzle 174 toward the catalyst surface plate 126. Then, the workpiece 128 held by the substrate holder 130 is pressed against the surface of the platinum (catalyst) 142 of the catalyst platen 126 with a predetermined pressure, and the workpiece 128 is pressed against the platinum (catalyst) 142 of the catalyst platen 126. The catalyst surface plate 126 and the workpiece 128 are rotated while the treatment liquid is interposed in the contact portion (processing portion), and the surface (lower surface) of the workpiece 128 is removed and etched (etched) flatly.
- the workpiece 128 is held in close proximity to the platinum (catalyst) 142 without pressing the workpiece 128 held by the substrate holder 130 against the platinum (catalyst) 142 of the catalyst surface plate 126 with a predetermined pressure.
- the surface of the workpiece 128 may be removed (etched) flatly.
- the PSD of the intermediate spatial frequency and the high spatial frequency region is adjusted to a predetermined value or less, and a mask blank substrate having a power spectral density and a surface roughness preferable in the present invention is manufactured.
- FIG. 3 is a schematic diagram showing the reflective mask blank 30 of the present embodiment.
- the reflective mask blank 30 of the present embodiment is an absorber that becomes a transfer pattern on the protective film 22 of the substrate 20 with the multilayer reflective film described above (or on the multilayer reflective film 21 when there is no protective film 22). It is manufactured by forming the film 24.
- the material of the absorber film 24 is not particularly limited. For example, it has a function of absorbing EUV light, and it is preferable to use a material containing Ta (tantalum) alone or Ta as a main component.
- the material mainly composed of Ta is usually an alloy of Ta.
- Such an absorber film preferably has an amorphous or microcrystalline structure in terms of smoothness and flatness.
- the material containing Ta as a main component include a material containing Ta and B, a material containing Ta and N, a material containing Ta and B, and further containing at least one of O and N, and a material containing Ta and Si.
- a material containing Ta, Si and N, a material containing Ta and Ge, a material containing Ta, Ge and N can be used.
- an amorphous structure can be easily obtained, and the smoothness of the absorber film 24 can be improved. Furthermore, if N and O are added to Ta, the resistance to oxidation is improved, so that the stability over time can be improved.
- the surface of the absorber film 24 has a power spectral density in the range described above for the multilayer reflective film 21 (that is, the PSD at a spatial frequency of 1 ⁇ m ⁇ 1 to 10 ⁇ m ⁇ 1 is 20 nm 4 or less and a spatial frequency of 10 ⁇ m ⁇ 1.
- the power spectral density at 100 ⁇ m ⁇ 1 or less is preferably 10 nm 4 or less from the viewpoint of suppressing detection of pseudo defects.
- the absorber film 24 Is preferably an amorphous structure or a microcrystalline structure. The crystal structure can be confirmed by an X-ray diffractometer (XRD).
- the defect inspection of the reflective mask blank 30 is performed with a high-sensitivity defect inspection apparatus using the 266 nm UV laser or the 193 nm ArF excimer laser and the 13.5 nm EUV light as the above-described inspection light source wavelength.
- the surface of the absorber film 24 is a surface opposite to the surface of the absorber film 24 in contact with the protective film 22 or the multilayer reflective film 21, and is a surface parallel to the main surface of the mask blank substrate 10. .
- the substrate 20 with a multilayer reflective film according to the present invention has a sufficiently flat surface roughness (PSD) in the spatial frequency region of the film surface (the multilayer reflective film 21 or the protective film 22). Since it is excellent, it is easy to set the PSD in the spatial frequency region of the absorber film 24 formed thereon to a range in which the number of detected defects including pseudo defects can be significantly suppressed.
- PSD surface roughness
- the reflective mask blank of the present invention is not limited to the configuration shown in FIG.
- a resist film serving as a mask for patterning the absorber film 24 can be formed on the absorber film 24, and a reflective mask blank with a resist film is also a reflective mask blank of the present invention.
- the resist film formed on the absorber film 24 may be a positive type or a negative type. Further, it may be used for electron beam drawing or laser drawing.
- a so-called hard mask (etching mask) film can be formed between the absorber film 24 and the resist film, and this aspect is also a reflective mask blank in the present invention.
- FIG. 4 is a schematic diagram showing the reflective mask 40 of the present embodiment.
- the reflective mask 40 of the present embodiment is manufactured by patterning the absorber film 24 in the reflective mask blank 30 and forming the absorber pattern 27 on the protective film 22 or the multilayer reflective film 21. .
- exposure light such as EUV light
- the exposure light is absorbed in a portion of the mask surface where the absorber film 24 is present, and the other portions where the absorber film 24 is removed are exposed. Since the exposure light is reflected by the protective film 22 and the multilayer reflective film 21, it can be used as a reflective mask 40 for lithography.
- a circuit pattern or the like based on the absorber pattern 27 of the reflective mask 40 is formed on a resist film formed on a transfer target such as a semiconductor substrate by a lithography process using the reflective mask 40 described above and an exposure apparatus. By transferring the transfer pattern and passing through various other steps, a semiconductor device in which various patterns such as wirings are formed on the semiconductor substrate can be manufactured.
- a reference mark is formed on the mask blank substrate 10, the multilayer reflective film-coated substrate 20, and the reflective mask blank 30.
- the reference mark and the position of the fatal defect detected by the high sensitivity defect inspection apparatus are determined. Coordinates can be managed. Based on the position information (defect data) of the obtained fatal defect, when producing the reflective mask 40, there is a fatal defect based on the above-described defect data and transferred pattern (circuit pattern) data.
- the drawing data can be corrected so that the absorber pattern 27 is formed at the existing location, and defects can be reduced.
- a multilayer reflective film was formed on a glass substrate under the various conditions described below, and BGL was obtained when a defect inspection was performed using a high-sensitivity defect inspection apparatus having an inspection light source wavelength of 13.5 nm.
- the used glass substrate was surface-processed by a processing method shown in Example 1 described later, and the glass substrate surface had a spatial frequency of 1 ⁇ m ⁇ 1 or more obtained by measuring the 1 ⁇ m ⁇ 1 ⁇ m region with an atomic force microscope.
- the power spectral density at 10 ⁇ m ⁇ 1 or less was 10 nm 4 or less.
- Example Sample 1 Using Mo target and Si target, Mo layer (low refractive index layer, thickness 2.8 nm) and Si layer (high refractive index layer, thickness 4.2 nm) are alternately laminated by ion beam sputtering. A multilayer reflective film was formed on the glass substrate. The incident angle of Mo and Si sputtered particles with respect to the glass substrate normal in ion beam sputtering was 30 degrees, and the gas flow rate of the ion source was 8 sccm. Further, a Ru protective film (film thickness: 2.5 nm) was formed on the multilayer reflective film by RF sputtering to obtain a substrate with a multilayer reflective film.
- Comparative Example Sample 1 Using Mo target and Si target, Mo layers (thickness: 2.8 nm) and Si layers (thickness: 4.2 nm) were alternately laminated by ion beam sputtering (number of laminations: 40 pairs), and multilayer reflective film was formed on the glass substrate.
- the incident angles of the Mo and Si sputtered particles with respect to the glass substrate normal in ion beam sputtering were set to 50 degrees for Mo and 40 degrees for Si, respectively, and the gas flow rate of the ion source was 8 sccm.
- a Ru protective film film thickness: 2.5 nm
- Comparative Sample 2 A substrate with a multilayer reflective film was produced in the same manner as Comparative Sample 1 except that no Ru protective film was formed.
- Comparative Sample 3 A substrate with a multilayer reflective film was prepared in the same manner as Comparative Sample 1 except that the gas flow rate of the ion source was changed to 16 sccm and no Ru protective film was formed.
- FIG. 5 shows that BGL depends on the film formation conditions (Mo and Si incident angles) of the multilayer reflective film. Moreover, it turns out that it is not dependent on other conditions, for example, a gas flow rate.
- FIG. 6 shows the result of power spectrum analysis after measuring the film surfaces of the substrates with multilayer reflective films of Example Sample 1 and Comparative Samples 1 to 3 described above with an atomic force microscope (measurement region 1 ⁇ m ⁇ 1 ⁇ m). .
- the PSD of the example sample 1 is generally smaller than the PSD of the comparative example sample 1 that is incident at more than 30 degrees with respect to the normal of the main surface of the substrate.
- PSD at a spatial frequency of 10 ⁇ m ⁇ 1 or more and 100 ⁇ m ⁇ 1 or less of a substrate with a multilayer reflective film is less than a predetermined value by appropriately controlling the incident angle of Mo and Si sputtered particles with respect to the glass substrate normal in ion beam sputtering.
- the number of detected defects including pseudo defects is small, and thus the substrate with the multilayer reflective film of the present invention that can detect fatal defects reliably, Examples of the reflective mask blank and the reflective mask will be described below.
- Example 1 MRF ⁇ EEM ⁇ CARE ⁇ Example Sample 1 Film formation conditions ⁇ Manufacture of mask blank substrate> (Polishing and surface processing by MRF)
- a SiO 2 —TiO 2 glass substrate having a size of 152.4 mm ⁇ 152.4 mm and a thickness of 6.35 mm was prepared.
- the front and back surfaces of the glass substrate were polished stepwise with cerium oxide abrasive grains and colloidal silica abrasive grains, and then surface-treated with a low concentration of silicic acid.
- the surface roughness of the surface of the glass substrate thus obtained was measured with an atomic force microscope.
- the root mean square roughness (Rms) was 0.15 nm.
- the surface shape (surface form, flatness) of a region of 148 mm ⁇ 148 mm on the front and back surfaces of the glass substrate was measured with a wavelength shift interferometer using a wavelength modulation laser.
- the flatness of the front and back surfaces of the glass substrate was 290 nm (convex shape).
- the measurement result of the surface shape (flatness) of the glass substrate surface is stored in a computer as height information with respect to a reference surface at each measurement point, and the reference value of the surface flatness required for the glass substrate is 50 nm (convex shape).
- the difference was calculated by a computer in comparison with the reference value 50 nm for the back flatness.
- processing conditions for local surface processing according to the required removal amount were set for each processing spot shape region in the glass substrate surface.
- the dummy substrate is processed with a spot without moving the substrate for a certain period of time in the same way as in actual processing, and the shape is converted to the same measuring machine as the apparatus for measuring the surface shape of the front and back surfaces.
- the spot processing volume per unit time was calculated. Then, according to the necessary removal amount obtained from the spot information and the surface shape information of the glass substrate, the scanning speed for raster scanning the glass substrate was determined.
- the front and back flatness of the glass substrate is locally below the reference value by the magneto-visco-elastic fluid polishing (Magneto Rheological Finishing MRF) processing method.
- MRF magneto-visco-elastic fluid polishing
- Surface processing was performed to adjust the surface shape.
- the magnetic viscoelastic fluid used at this time contained an iron component, and the polishing slurry was an alkaline aqueous solution + abrasive (about 2 wt%) and an abrasive: cerium oxide.
- the glass substrate was immersed in a cleaning tank containing a hydrochloric acid aqueous solution having a concentration of about 10% (temperature: about 25 ° C.) for about 10 minutes, and then rinsed with pure water and dried with isopropyl alcohol (IPA).
- IPA isopropyl alcohol
- the flatness of the front and back surfaces was about 40 to 50 nm.
- the surface roughness of the glass substrate surface was measured by using an atomic force microscope to measure the 1 ⁇ m ⁇ 1 ⁇ m region in the center of the main surface (142 mm ⁇ 142 mm) on the side where the transfer pattern is formed.
- the roughness (Rms) was 0.37 nm, which was in a state of being rougher than the surface roughness before local surface processing by MRF.
- the surface state of this glass substrate was measured with a non-contact surface shape measuring instrument NewView 6300 manufactured by Zygo (measurement area: 0.14 mm ⁇ 0.105 mm, magnification: 50 times), and power spectrum analysis was performed. The results are shown in FIG. 7 (displayed as “EEM unprocessed”, and “EEM processed” will be described later).
- the spatial frequency 1 ⁇ 10 -2 ⁇ m power spectral density at -1 to 1 [mu] m -1 or less at a maximum 4.5 ⁇ 10 6 nm 4 (a spatial frequency 1 ⁇ 10 -2 ⁇ m -1) met See dotted line in FIG. 7).
- the surface roughness of the glass substrate was measured with an atomic force microscope (measurement region: 1 ⁇ m ⁇ 1 ⁇ m), and the result of power spectrum analysis is shown as “unpolished part” in FIG.
- the power spectral density at a spatial frequency of 1 ⁇ m ⁇ 1 or more and 100 ⁇ m ⁇ 1 or less was 14 nm 4 (spatial frequency 2 ⁇ m ⁇ 1 ) at the maximum.
- the maximum power spectral density at a spatial frequency of 1 ⁇ m ⁇ 1 to 10 ⁇ m ⁇ 1 is 14 nm 4 (spatial frequency 3 ⁇ m ⁇ 1 ), and the maximum power density at a spatial frequency of 10 ⁇ m ⁇ 1 to 100 ⁇ m ⁇ 1 is 8.32 nm. 4 (spatial frequency 11 ⁇ m ⁇ 1 ), and the minimum was 0.58 nm 4 (spatial frequency 100 ⁇ m ⁇ 1 ) (see the dotted line in FIG. 8).
- Processing liquid Neutral aqueous solution (pH: 7) containing fine powder particles (concentration: 3 wt%)
- Fine powder particles colloidal silica, average particle size; about 80 nm
- Rotating body Polyurethane rotating sphere
- the end surface of the glass substrate was scrubbed, and then the front and back surfaces were subjected to megasonic cleaning with a low-concentration hydrofluoric acid aqueous solution (frequency 3 MHz, 60 seconds), rinsing with pure water, and drying.
- a low-concentration hydrofluoric acid aqueous solution frequency 3 MHz, 60 seconds
- the surface state of the glass substrate surface-treated by EEM was measured with a non-contact surface shape measuring instrument NewView 6300 manufactured by Zygo in the same manner as described above (measurement region: 0.14 mm ⁇ 0.105 mm), and power spectrum analysis was performed. .
- the result is shown as “with EEM processing” in FIG.
- the enlargement magnification corresponds to the “EEM unprocessed”.
- the power spectral density in the spatial frequency 1 ⁇ 10 -2 ⁇ m -1 or more 1 [mu] m -1 or less is maximized at 10 6 nm 4 (a spatial frequency 1 ⁇ 10 -2 ⁇ m -1).
- a spatial frequency 1 ⁇ 10 -2 ⁇ m -1 the power spectral density in the spatial frequency 1 ⁇ 10 -2 ⁇ m -1 or more 1 [mu] m -1 or less.
- the surface state of the glass substrate obtained by EEM surface processing was measured with an atomic force microscope (measurement region: center of glass substrate: 1 ⁇ m ⁇ 1 ⁇ m), and the result of power spectrum analysis is shown in FIG. This is shown as “processing part”.
- the power spectral density at a spatial frequency of 1 ⁇ m ⁇ 1 or more and 100 ⁇ m ⁇ 1 or less was 25 nm 4 at maximum (spatial frequency 3 ⁇ m ⁇ 1 ) (see the solid line in FIG. 8). More specifically, the maximum power spectral density at a spatial frequency of 1 ⁇ m ⁇ 1 to 10 ⁇ m ⁇ 1 is 25 nm 4 (spatial frequency 3 ⁇ m ⁇ 1 ), and the maximum power spectral density at a spatial frequency of 10 ⁇ m ⁇ 1 to 100 ⁇ m ⁇ 1 is 9. It was 0 nm 4 (spatial frequency 10 ⁇ m ⁇ 1 ).
- the results of FIG. 8 show that the surface processing by EEM does not improve (or deteriorate) the PSD of the spatial frequency of 1 ⁇ m ⁇ 1 or more and 10 ⁇ m ⁇ 1 or less, but the spatial frequency of 10 ⁇ m ⁇ 1 or more and 100 ⁇ m ⁇ 1 or less. This PSD could be reduced.
- Processing fluid Pure water Catalyst: Pt Substrate rotation speed: 10.3 rotations / minute Catalyst platen rotation speed: 10 rotations / minute Processing time: 50 minutes Processing pressure: 250 hPa
- the surface state of the glass substrate surface-treated with CARE was measured with an atomic force microscope (measurement region: 1 ⁇ m ⁇ 1 ⁇ m), and the result of power spectrum analysis is shown in FIG.
- the maximum power spectral density at a spatial frequency of 1 ⁇ m ⁇ 1 to 100 ⁇ m ⁇ 1 was 5.0 nm 4 (spatial frequency 2 ⁇ m ⁇ 1 ).
- the power spectral density at a spatial frequency of 1 ⁇ m ⁇ 1 or more and 10 ⁇ m ⁇ 1 or less is 5.0 nm 4 at maximum (spatial frequency 2 ⁇ m ⁇ 1 ), and the power spectral density at a spatial frequency of 10 ⁇ m ⁇ 1 or more and 100 ⁇ m ⁇ 1 or less is maximum. It was 1.9 nm 4 (spatial frequency 11 ⁇ m ⁇ 1 ).
- the roughness in the high spatial frequency region could be reduced by surface processing with CARE.
- the root mean square roughness Rms at a spatial frequency of 10 ⁇ m ⁇ 1 or more and 100 ⁇ m ⁇ 1 or less was as good as 0.08 nm.
- a multilayer reflective film is formed on the mask blank substrate thus obtained under the film formation conditions in Example Sample 1, and then a Ru protective film (on the multilayer reflective film by RF sputtering). A film with a thickness of 2.5 nm) was formed to produce a substrate with a multilayer reflective film.
- the surface of the protective film of the obtained multilayer reflective film-coated substrate was measured with an atomic force microscope (measurement region 1 ⁇ m ⁇ 1 ⁇ m), and then power spectrum analysis was performed.
- the power spectral density at a spatial frequency of 1 ⁇ m ⁇ 1 to 10 ⁇ m ⁇ 1 is 15.8 nm 4 at maximum (spatial frequency 5 ⁇ m ⁇ 1 ), and the power spectral density at a spatial frequency of 10 ⁇ m ⁇ 1 to 100 ⁇ m ⁇ 1 is 6 at maximum. It was .73 nm 4 (spatial frequency 10 ⁇ m ⁇ 1 ).
- the Rms at a spatial frequency of 10 ⁇ m ⁇ 1 or more and 100 ⁇ m ⁇ 1 or less was 0.126 nm. Further, when the reflectance of the surface of the protective film was measured by LPR1016 manufactured by EUV Technology, the reflectance was as high as 65.1%.
- the inspection sensitivity condition was an inspection sensitivity condition in which a defect having a size of 20 nm can be detected by a sphere equivalent diameter SEVD (Sphere Equivalent Volume Diameter).
- SEVD Sphere Equivalent Volume Diameter
- the defect area (S) and the defect height (h) can be measured by an atomic force microscope (AFM).
- AFM atomic force microscope
- the number of detected defects by Teron 610 was 21,705, and even in the actinic inspection, the BGL did not exceed the threshold, the number of detected defects including pseudo defects was small, and the defect inspection was easy. If the number of detected defects by Teron 610 is 100000 or less and the number of detected defects including pseudo defects in the actinic inspection is small, the presence or absence of a fatal defect such as a foreign object or a flaw can be easily inspected.
- a back surface conductive film was formed by DC magnetron sputtering on the back surface of the substrate with the multilayer reflection film where the multilayer reflection film was not formed.
- the film thickness of the back surface conductive film was 20 nm.
- an absorber film made of TaBN was formed on the surface of the protective film of the substrate with the multilayer reflective film described above by DC magnetron sputtering to produce a reflective mask blank.
- the film thickness of the absorber film was 70 nm.
- XRD X-ray diffractometer
- a resist was applied to the surface of the absorber film described above by a spin coating method, and a resist film having a thickness of 150 nm was formed through heating and cooling processes. Next, a resist pattern was formed through drawing and development steps of a desired pattern. Using this resist pattern as a mask, patterning of the TaBN film as the absorber film was performed by dry etching with Cl 2 + He gas to form an absorber pattern on the protective film. Thereafter, the resist film was removed and washed to produce a reflective mask.
- the drawing data was corrected based on the above-mentioned reference mark so that the absorber pattern was arranged at the location where the fatal defect was present, and a reflective mask was produced.
- a high-sensitivity defect inspection apparatus Teon 600 series manufactured by KLA-Tencor
- KLA-Tencor high-sensitivity defect inspection apparatus
- Example 2 Using the same glass substrate as used in Example 1, MRF and EEM processing was performed in the same manner as in Example 1.
- the EEM processing conditions are as follows.
- Processing liquid neutral aqueous solution (pH: 7) containing fine powder particles (concentration: 5 wt%)
- Fine powder particles colloidal silica, average particle size; about 80 nm
- Rotating body Polyurethane rotating sphere
- a multilayer reflective film is formed on the mask blank substrate thus obtained under the film formation conditions in Example Sample 1, and then a Ru protective film (film thickness 2) is formed on the multilayer reflective film by RF sputtering. .5 nm) to form a substrate with a multilayer reflective film.
- the surface of the protective film of the obtained multilayer reflective film-coated substrate was measured with an atomic force microscope (measurement region 1 ⁇ m ⁇ 1 ⁇ m), and then power spectrum analysis was performed. Maximum result, 17.2 nm 4 (a spatial frequency 5.4 [mu] m -1) power spectral density at the maximum in the spatial frequency 1 [mu] m -1 or 10 [mu] m -1 or less, the power spectral density in the spatial frequency 10 [mu] m -1 or 100 [mu] m -1 or less And 7.18 nm 4 (spatial frequency 10 ⁇ m ⁇ 1 ).
- the Rms with a spatial frequency of 10 ⁇ m ⁇ 1 or more and 100 ⁇ m ⁇ 1 or less was 0.123 nm.
- the reflectance of the surface of the protective film was measured by LPR1016 manufactured by EUV Technology, the reflectance was as high as 65.2%.
- defect inspection was performed using a high-sensitivity defect inspection apparatus (KLA-Tencor Teron 600 series) having an inspection light source wavelength of 193 nm and a high-sensitivity defect inspection apparatus having an inspection light source wavelength of 13.5 nm.
- the measurement area was 132 mm ⁇ 132 mm.
- the inspection sensitivity condition was an inspection sensitivity condition that can detect a 20 nm size defect with a sphere equivalent diameter SEVD.
- the number of detected defects by Teron 610 was 28,591, and BGL did not exceed the threshold even in the actinic inspection, and the number of detected defects including pseudo defects was small, and the defect inspection was easy. The smaller the number of pseudo defects, the easier it can be inspected for the presence of fatal defects such as foreign matter and scratches.
- a reflective mask blank and a reflective mask were produced in the same manner as in Example 1 described above.
- the obtained reflective mask was subjected to defect inspection using a high-sensitivity defect inspection apparatus (Teron 600 series manufactured by KLA-Tencor) having an inspection light source wavelength of 193 nm, no defects were confirmed.
- Processing liquid neutral aqueous solution (pH: 7) containing fine powder particles (concentration: 5 wt%)
- Fine powder particles colloidal silica, average particle size: about 80 nm
- Rotating body Polyurethane roll
- a multilayer reflective film is formed on the mask blank substrate thus manufactured under the film formation conditions in Comparative Sample 2, and then a Ru protective film (film thickness 2) is formed on the multilayer reflective film by RF sputtering. .5 nm) to form a substrate with a multilayer reflective film.
- the surface of the protective film of the obtained multilayer reflective film-coated substrate was measured with an atomic force microscope (measurement region 1 ⁇ m ⁇ 1 ⁇ m), and then power spectrum analysis was performed. Maximum result, 18.1 nm 4 (a spatial frequency 4.8 .mu.m -1) power spectral density at the maximum in the spatial frequency 1 [mu] m -1 or 10 [mu] m -1 or less, the power spectral density in the spatial frequency 10 [mu] m -1 or 100 [mu] m -1 or less It was 9.6 nm 4 (spatial frequency 10 ⁇ m ⁇ 1 ).
- the Rms with a spatial frequency of 10 ⁇ m ⁇ 1 or more and 100 ⁇ m ⁇ 1 or less was 0.151 nm.
- the reflectance of this protective film surface was measured by LPR1016 manufactured by EUV Technology and found to be 64.4%.
- defect inspection was performed using a high-sensitivity defect inspection apparatus (KLA-Tencor Teron 600 series) having an inspection light source wavelength of 193 nm and a high-sensitivity defect inspection apparatus having an inspection light source wavelength of 13.5 nm.
- the measurement area was 132 mm ⁇ 132 mm.
- the inspection sensitivity condition was an inspection sensitivity condition that can detect a 20 nm size defect with a sphere equivalent diameter SEVD.
- the number of detected defects was 34,017, and in the actinic inspection machine, the BGL exceeded the threshold value, and the number of detected defects including pseudo defects was as large as 100,000, making it difficult to perform defect inspection.
- Example 3 In Example 1 described above, a substrate with a multilayer reflective film was prepared in the same manner as Example 1 except that the mask blank substrate was subjected to double-sided touch polishing without performing EEM and CARE.
- the surface of the protective film of the obtained multilayer reflective film-coated substrate was measured with an atomic force microscope (measurement region 1 ⁇ m ⁇ 1 ⁇ m), and then power spectrum analysis was performed.
- the maximum power spectral density at a spatial frequency of 1 ⁇ m ⁇ 1 to 10 ⁇ m ⁇ 1 is 18.5 nm 4 at maximum (spatial frequency 4.5 ⁇ m ⁇ 1 ), and the power spectral density at a spatial frequency of 10 ⁇ m ⁇ 1 to 100 ⁇ m ⁇ 1 is maximum.
- 8.8 nm 4 spatial frequency 10 ⁇ m ⁇ 1 ).
- the Rms with a spatial frequency of 10 ⁇ m ⁇ 1 or more and 100 ⁇ m ⁇ 1 or less was 0.129 nm.
- the reflectance of the surface of the protective film was measured by LPR1016 manufactured by EUV Technology, the reflectance was as high as 65.0%.
- defect inspection was performed using a high-sensitivity defect inspection apparatus (KLA-Tencor Teron 600 series) having an inspection light source wavelength of 193 nm and a high-sensitivity defect inspection apparatus having an inspection light source wavelength of 13.5 nm.
- the measurement area was 132 mm ⁇ 132 mm.
- the inspection sensitivity condition was an inspection sensitivity condition that can detect a 20 nm size defect with a sphere equivalent diameter SEVD.
- the number of Teron 610 defects detected was 40,028, and even in the Actinic inspection machine, BGL did not exceed the threshold value, and the number of detected defects including pseudo defects was small and inspection was possible.
- Example 4 Using the same glass substrate as used in Example 1, MRF and CARE processing was performed in the same manner as in Example 1.
- the CARE processing conditions are as follows.
- Processing fluid Pure water Catalyst: Cr Substrate rotation speed: 10.3 rotations / minute
- Catalyst platen rotation speed 10 rotations / minute
- Processing time 20 minutes
- the substrate After scrubbing the end face of the glass substrate, the substrate is immersed in a cleaning bath containing a ceric ammonium nitrate and a Cr etching solution containing perchloric acid for about 10 minutes, and then rinsed and dried with pure water. went.
- the cleaning with the Cr etching solution was performed a plurality of times until there was no Cr residue as a catalyst from the front and back surfaces of the glass substrate.
- a multilayer reflective film is formed on the mask blank substrate thus obtained under the film formation conditions in Example Sample 1 above, and further, a Ru protective film (film thickness) is formed on the multilayer reflective film by ion beam sputtering. 2.5 nm) to form a substrate with a multilayer reflective film.
- the surface of the protective film of the obtained multilayer reflective film-coated substrate was measured with an atomic force microscope (measurement region 1 ⁇ m ⁇ 1 ⁇ m), and then power spectrum analysis was performed.
- the maximum power spectral density at a spatial frequency of 1 ⁇ m ⁇ 1 to 10 ⁇ m ⁇ 1 is 16.4 nm 4 (spatial frequency 3 ⁇ m ⁇ 1 ), and the maximum power spectral density at a spatial frequency of 10 ⁇ m ⁇ 1 to 100 ⁇ m ⁇ 1 is 6 at maximum. 4 nm 4 (spatial frequency 10 ⁇ m ⁇ 1 ).
- the Rms with a spatial frequency of 10 ⁇ m ⁇ 1 or more and 100 ⁇ m ⁇ 1 or less was 0.119 nm.
- the reflectance of the surface of the protective film was measured by LPR1016 manufactured by EUV Technology, the reflectance was as high as 66.2%.
- defect inspection was performed using a high-sensitivity defect inspection apparatus (KLA-Tencor Teron 600 series) having an inspection light source wavelength of 193 nm and a high-sensitivity defect inspection apparatus having an inspection light source wavelength of 13.5 nm.
- the measurement area was 132 mm ⁇ 132 mm.
- the inspection sensitivity condition was an inspection sensitivity condition that can detect a 20 nm size defect with a sphere equivalent diameter SEVD.
- the number of detected defects by Teron 610 was 23,450, and even in the actinic inspection, the BGL did not exceed the threshold, the number of detected defects including pseudo defects was small, and the defect inspection was easy. The smaller the number of pseudo defects, the easier it can be inspected for the presence of fatal defects such as foreign matter and scratches.
- a reflective mask blank and a reflective mask were produced in the same manner as in Example 1 described above.
- the obtained reflective mask was subjected to defect inspection using a high-sensitivity defect inspection apparatus (Teron 600 series manufactured by KLA-Tencor) having an inspection light source wavelength of 193 nm, no defects were confirmed.
- the surface of the protective film of the obtained multilayer reflective film-coated substrate was measured with an atomic force microscope (measurement region 1 ⁇ m ⁇ 1 ⁇ m), and then power spectrum analysis was performed.
- the power spectral density at a spatial frequency of 1 ⁇ m ⁇ 1 to 10 ⁇ m ⁇ 1 is 25 nm 4 (spatial frequency 3.5 ⁇ m ⁇ 1 ) at the maximum
- the power spectral density at a spatial frequency of 10 ⁇ m ⁇ 1 to 100 ⁇ m ⁇ 1 is a maximum of 10 It was 5 nm 4 (spatial frequency 10 ⁇ m ⁇ 1 ).
- the Rms with a spatial frequency of 10 ⁇ m ⁇ 1 or more and 100 ⁇ m ⁇ 1 or less was 0.147 nm.
- the reflectance of the surface of the protective film was measured with an LPR1016 manufactured by EUV Technology, and found to be 64.8%.
- defect inspection was performed using a high-sensitivity defect inspection apparatus (KLA-Tencor Teron 600 series) having an inspection light source wavelength of 193 nm and a high-sensitivity defect inspection apparatus having an inspection light source wavelength of 13.5 nm.
- the measurement area was 132 mm ⁇ 132 mm.
- the inspection sensitivity condition was an inspection sensitivity condition that can detect a 20 nm size defect with a sphere equivalent diameter SEVD.
- the number of detected defects was over 100,000 in Teron 610, BGL exceeded the threshold value in Actinic, and the number of detected defects including pseudo defects was as large as 100,000.
- substrate with a multilayer reflective film described below the manufacturing method of a reflective mask blank, the manufacturing method of a reflective mask, reflective type Mask blanks and reflective masks can also provide the effects of the present invention.
- (Configuration A) A method for producing a substrate with a multilayer reflective film having a multilayer reflective film in which a high refractive index layer and a low refractive index layer are alternately laminated on a main surface on a side where a transfer pattern of a mask blank substrate is formed,
- the mask blank substrate is surface processed by EEM and / or catalyst reference etching,
- the sputtered particles of the high refractive index material and the low refractive index material are set to zero with respect to the normal of the main surface by ion beam sputtering using a target of a high refractive index material and a low refractive index material.
- Configuration B The method for manufacturing a substrate with a multilayer reflective film according to Configuration A, wherein the mask blank substrate is made of a glass material.
- Configuration F An absorber film serving as a transfer pattern is formed on the multilayer reflective film or the protective film of the multilayer reflective film-coated substrate manufactured by the method for manufacturing a multilayer reflective film-coated substrate according to any one of configurations A to E.
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Abstract
Description
(構成1)
本発明の構成1は、高屈折率層と低屈折率層とを交互に積層した多層反射膜を、マスクブランク用基板の転写パターンが形成される側の主表面上に有する多層反射膜付き基板の製造方法であって、高屈折率材料と低屈折率材料のターゲットを用いたイオンビームスパッタリングにより、前記主表面上に前記多層反射膜を成膜する工程を有し、前記イオンビームスパッタリングにおいて、前記多層反射膜の膜表面の1μm×1μmの領域を原子間力顕微鏡で測定して得られる空間周波数1μm-1以上10μm-1以下におけるパワースペクトル密度が20nm4以下であって、且つ、空間周波数10μm-1以上100μm-1以下におけるパワースペクトル密度が10nm4以下となるように、前記高屈折率材料と前記低屈折率材料のスパッタ粒子を前記基板主表面の法線に対して所定の入射角度で入射させることを特徴とする多層反射膜付き基板の製造方法である。
本発明の構成2は、前記入射角度が、前記主表面の法線に対して0度以上30度以下であることを特徴とする構成1に記載の多層反射膜付き基板の製造方法である。
本発明の構成3は、前記多層反射膜上に保護膜を形成する工程をさらに有し、該保護膜表面の1μm×1μmの領域を原子間力顕微鏡で測定して得られる空間周波数1μm-1以上10μm-1以下におけるパワースペクトル密度が20nm4以下であって、且つ、空間周波数10μm-1以上100μm-1以下におけるパワースペクトル密度が10nm4以下であることを特徴とする構成1又は2に記載の多層反射膜付き基板の製造方法である。
本発明の構成4は、前記マスクブランク用基板の転写パターンが形成される側の主表面の1μm×1μmの領域を原子間力顕微鏡で測定して得られる空間周波数1μm-1以上10μm-1以下におけるパワースペクトル密度が、10nm4以下であることを特徴とする構成1~3のいずれかに記載の多層反射膜付き基板の製造方法である。
本発明の構成5は、前記マスクブランク用基板が、EEM(Elastic Emission Machining)及び/又は触媒基準エッチング:CARE(CAtalyst-Referred Etching)により表面加工されていることを特徴とする構成4に記載の多層反射膜付き基板の製造方法である。
本発明の構成6は、構成1~5のいずれかに記載の多層反射膜付き基板の製造方法により製造された多層反射膜付き基板の多層反射膜上又は保護膜上に、転写パターンとなる吸収体膜を形成することを特徴とする反射型マスクブランクの製造方法である。
本発明の構成7は、構成6に記載の反射型マスクブランクの製造方法により製造された反射型マスクブランクにおける吸収体膜をパターニングして、前記多層反射膜上又は前記保護膜上に吸収体パターンを形成することを特徴とする反射型マスクの製造方法である。
本発明の構成8は、マスクブランク用基板の転写パターンが形成される側の主表面上に、高屈折率層と低屈折率層とを交互に積層した多層反射膜を有する多層反射膜付き基板であって、前記多層反射膜付き基板の膜表面は、1μm×1μmの領域を原子間力顕微鏡で測定して得られる空間周波数1μm-1以上10μm-1以下におけるパワースペクトル密度が20nm4以下であって、且つ、空間周波数10μm-1以上100μm-1以下におけるパワースペクトル密度が10nm4以下であり、前記膜表面の空間周波数10μm-1以上100μm-1以下における表面粗さが二乗平均平方根粗さ(Rms)で0.13nm未満であることを特徴とする多層反射膜付き基板である。
本発明の構成9は、前記多層反射膜付き基板が、前記多層反射膜上に保護膜を有し、該保護膜表面の1μm×1μmの領域を原子間力顕微鏡で測定して得られる空間周波数1μm-1以上10μm-1以下におけるパワースペクトル密度が20nm4以下であって、且つ、空間周波数10μm-1以上100μm-1以下におけるパワースペクトル密度が10nm4以下であり、前記保護膜表面の空間周波数10μm-1以上100μm-1以下における表面粗さが二乗平均平方根粗さ(Rms)で0.13nm未満であることを特徴とする構成8に記載の多層反射膜付き基板である。
本発明の構成10は、構成8又は9に記載の多層反射膜付き基板の多層反射膜上又は保護膜上に、転写パターンとなる吸収体膜を有することを特徴とする反射型マスクブランクである。
本発明の構成11は、構成10に記載の反射型マスクブランクにおける吸収体膜をパターニングして得られた吸収体パターンを、前記多層反射膜上又は前記保護膜上に有することを特徴とする反射型マスクである。
本発明の構成12は、構成11に記載の反射型マスクを用いて、露光装置を使用したリソグラフィープロセスを行い、被転写体上に転写パターンを形成する工程を有することを特徴とする半導体装置の製造方法である。
まず、本発明の一実施形態に係る多層反射膜付き基板20の製造方法について以下に説明する。図1は、本実施形態の多層反射膜付き基板20を示す模式図である。
多層反射膜21の膜表面を例えば原子間力顕微鏡により測定して得られた前記膜表面の凹凸をフーリエ変換することにより、前記凹凸を所定の空間周波数での振幅強度で表すことができる。これは、前記凹凸(つまり多層反射膜21の膜表面の微細形態)の測定データを、所定の空間周波数の波の和として表す、つまり多層反射膜21の表面形態を所定の空間周波数の波に分けていくものである。
本発明においては、上述の空間周波数領域におけるPSDを達成するために、特定のイオンビームスパッタリングで上記多層反射膜21を形成する。例えば、多層反射膜21が上述したMo/Si周期多層膜の場合、イオンビームスパッタリングにより、まずSiターゲットを用いて厚さ数nm程度のSi膜をマスクブランク用基板10上に成膜し、その後、Moターゲットを用いて厚さ数nm程度のMo膜を成膜し、これを一周期として、40~60周期積層して、多層反射膜21を形成する。
上記のEUV光における多層反射膜21の反射率を高い状態で維持し、かつ疑似欠陥を含む欠陥検出数を抑制するために、多層反射膜21における空間周波数10μm-1以上100μm-1以下における表面粗さ(Rms)を0.13nm未満、好ましくは0.12nm以下にする。ここで、Rms(Root means square)は、後述する[数4]における式(1)で定義されるパラメーターであって、原子間力顕微鏡DI Dimension3100(Veeco社製)により、空間周波数10μm-1以上100μm-1以下における粗さ成分を抽出して求める表面粗さ(Rms)である。
上記で形成された多層反射膜21の上に、EUVリソグラフィー用反射型マスクの製造工程におけるドライエッチングやウェット洗浄からの多層反射膜21の保護のため、保護膜22(図3を参照)を形成することもできる。このように、マスクブランク用基板10上に、多層反射膜21と、保護膜22とを有する形態も本発明における多層反射膜付き基板とすることができる。
次に、以上説明した本実施形態の多層反射膜付き基板20を構成するマスクブランク用基板10について説明する。
本実施形態におけるマスクブランク用基板10においては、その転写パターンが形成される側の主表面の1μm×1μmの領域を原子間力顕微鏡で測定して得られる1μm-1以上10μm-1以下の領域でのPSDが10nm4以下であることが好ましい。マスクブランク用基板10がこのようなPSD範囲を満たしていると、上記で説明したPSDを満たす多層反射膜21を形成することが容易になり、本実施形態の多層反射膜付き基板21において、検査光源波長として266nm、193nm、13.5nmといった波長の光を使用する高感度欠陥検査装置による検査を行っても、疑似欠陥を含む欠陥検出数が有効に抑制され、これにより致命欠陥の顕著化が図られる。さらに、マスクブランク用基板10自体について検査を行った場合にも、疑似欠陥が検出されにくい。
マスクブランク用基板10における代表的な表面粗さの指標であるRms(Root means square))は、二乗平均平方根粗さであり、平均線から測定曲線までの偏差の二乗を平均した値の平方根である。すなわちRmsは下式(1)で表される。
以上説明した本発明において好ましいマスクブランク用基板は、その転写パターンが形成される側の主表面を、所定の表面形態、すなわち主表面の1μm×1μmの領域を原子間力顕微鏡で測定して得られる空間周波数1μm-1以上10μm-1以下におけるパワースペクトル密度が10nm4以下となるように表面加工することによって製造することができる。なお、上述の表面粗さ(Rmax、Rms等)、平坦度を達成するための表面加工も併せて行うことが好ましい。その表面加工方法は公知であり、本発明において特に制限なく採用することができる。
EEMは、0.1μm以下の微細粉末粒子を被加工物(マスクブランク用基板)に対してほぼ無荷重状態で接触させ、そのとき微細粉末粒子と被加工物の界面で発生する相互作用(一種の化学結合)により、被加工物表面原子を原子単位で除去するという非接触研磨方法である。
次に、CAREの加工原理は、被加工物(マスクブランク用基板)と触媒を処理液中に配置するか、被加工物と触媒との間に処理液を供給し、被加工物と触媒を接触させ、そのときに触媒上に吸着している処理液中の分子から生成された活性種によって被加工物を加工するものである。なお、被加工物がガラスなどの固体酸化物からなる場合には、前記加工原理は、処理液を水とし、水の存在下で被加工物と触媒を接触させ、触媒と被加工物表面とを相対運動させる等することにより、加水分解による分解生成物を被加工物表面から除去し加工するものである。
次に、本発明の一実施形態に係る反射型マスクブランク30の製造方法について以下に説明する。図3は、本実施形態の反射型マスクブランク30を示す模式図である。
次に、本発明の一実施形態に係る反射型マスク40の製造方法について以下に説明する。図4は、本実施形態の反射型マスク40を示す模式図である。
以上説明した反射型マスク40と、露光装置を使用したリソグラフィープロセスにより、半導体基板等の被転写体上に形成されたレジスト膜に、前記反射型マスク40の吸収体パターン27に基づく回路パターン等の転写パターンを転写し、その他種々の工程を経ることで、半導体基板上に配線など種々のパターン等が形成された半導体装置を製造することができる。
以下に示す種々の条件でガラス基板上に多層反射膜を形成し、それについて検査光源波長が13.5nmの高感度欠陥検査装置を使用して欠陥検査を行ったときのBGLを求めた。尚、使用したガラス基板は、後述する実施例1に示す加工方法により表面加工され、ガラス基板表面は、その1μm×1μmの領域を原子間力顕微鏡で測定して得られる空間周波数1μm-1以上10μm-1以下におけるパワースペクトル密度が10nm4以下であるものを使用した。
上記条件にて作製した多層反射膜付き基板の膜表面の空間周波数10μm-1以上100μm-1以下の表面粗さ(Rms)を原子間力顕微鏡にて測定した。測定領域は1μm×1μmである。結果を下記に示す。
比較例試料1:Rms=0.148nm
比較例試料2:Rms=0.132nm
比較例試料3:Rms=0.146nm
上述の実施例試料1、比較例試料1~3の多層反射膜付き基板の膜表面を原子間力顕微鏡(測定領域1μm×1μm)にて測定した後、パワースペクトル解析した結果を図6に示す。
<マスクブランク用基板の作製>
(研磨及びMRFによる表面加工)
マスクブランク用基板として、大きさが152.4mm×152.4mm、厚さが6.35mmのSiO2-TiO2系のガラス基板を準備した。両面研磨装置を用いて、当該ガラス基板の表裏面を、酸化セリウム砥粒及びコロイダルシリカ砥粒により段階的に研磨した後、低濃度のケイフッ酸で表面処理した。これにより得られたガラス基板表面の表面粗さを原子間力顕微鏡で測定したところ、二乗平均平方根粗さ(Rms)は0.15nmであった。
次に、以上のパワースペクトル解析を行ったガラス基板の表裏面について、ガラス基板表面の表面形状を維持又は改善する目的と、中間空間周波数領域(10-2μm以上1μm-1以下)のPSDを低減することを目的として、ガラス基板の表裏面にEEMを実施した。このEEMは、以下の加工条件で行った。
微細粉末粒子:コロイダルシリカ、平均粒径;約80nm
回転体:ポリウレタン回転球
回転体回転数:280rpm
研磨時間:120分
荷重:1.5kg
次に、以上のEEM表面加工を経たガラス基板の表裏面について、高空間周波数領域(1μm-1以上)のPSDを低減することを目的として、ガラス基板の表裏面に対して、図9のCARE加工装置を使用して片面ずつ触媒基準エッチング(CARE)による表面加工を行った。なお、加工条件は以下の通りとした。
触媒:Pt
基板回転数:10.3回転/分
触媒定盤回転数:10回転/分
加工時間:50分
加工圧:250hPa
次に、このようにして得られたマスクブランク用基板上に、上記実施例試料1における成膜条件で多層反射膜を成膜し、さらに、多層反射膜上にRFスパッタリングにより、Ru保護膜(膜厚2.5nm)を成膜して多層反射膜付き基板を作製した。
次に、多層反射膜付き基板の保護膜及び多層反射膜に対して、転写パターン形成領域の外側4箇所に、上記欠陥の位置を座標管理するための基準マークを集束イオンビームにより形成した。
上述した吸収体膜の表面に、スピンコート法によりレジストを塗布し、加熱及び冷却工程を経て、膜厚150nmのレジスト膜を成膜した。次いで、所望のパターンの描画及び現像工程を経て、レジストパターンを形成した。このレジストパターンをマスクにして、Cl2+Heガスのドライエッチングにより、吸収体膜であるTaBN膜のパターニングを行い、保護膜上に吸収体パターンを形成した。その後、レジスト膜を除去し、洗浄を行い、反射型マスクを作製した。
実施例1で使用したのと同様のガラス基板を使用して、実施例1と同様にMRF及びEEM加工を行った。なお、EEM加工条件は以下の通りである。
微細粉末粒子:コロイダルシリカ、平均粒径;約80nm
回転体:ポリウレタン回転球
回転体回転数:280rpm
研磨時間:120分
荷重:1.5kg
ガラス基板として、大きさが152.4mm×152.4mm、厚さが6.35mmのSiO2-TiO2系のガラス基板を準備し、実施例1と同様にMRF及びEEM加工を実施した。なお、EEM加工の条件は以下の通りである。
微細粉末粒子:コロイダルシリカ、平均粒径:約80nm
回転体:ポリウレタンロール
回転体回転数:280rpm
研磨時間:180分
上述の実施例1において、マスクブランク用基板の作製を、EEM及びCAREを行わず、両面タッチ研磨を行った以外は実施例1と同様に多層反射膜付き基板を作製した。
実施例1で使用したのと同様のガラス基板を使用して、実施例1と同様にMRF及びCARE加工を行った。なお、CARE加工条件は以下の通りである。
触媒:Cr
基板回転数:10.3回転/分
触媒定盤回転数:10回転/分
加工時間:20分
加工圧力:50hPa
上述の参考例1において、EEMを行わず、両面タッチ研磨を行った以外は参考例1と同様に多層反射膜付き基板を作製した。
高屈折率層と低屈折率層とを交互に積層した多層反射膜を、マスクブランク用基板の転写パターンが形成される側の主表面上に有する多層反射膜付き基板の製造方法であって、
前記マスクブランク用基板は、EEM及び/又は触媒基準エッチングにより表面加工されており、
前記主表面上に、高屈折率材料と低屈折率材料のターゲットを用いたイオンビームスパッタリングにより、前記高屈折率材料と前記低屈折率材料のスパッタ粒子を前記主表面の法線に対して0度以上30度以下の入射角度で入射させて前記多層反射膜を成膜することを特徴とする多層反射膜付き基板の製造方法。
前記マスクブランク用基板は、ガラス材料からなることを特徴とする構成A記載の多層反射膜付き基板の製造方法。
前記触媒基準エッチングは、遷移金属を含む材料からなる触媒を、処理液を介して前記主表面に接触若しくは極接近させ、前記触媒と前記主表面とを相対運動させることにより、加水分解による分解生成物を前記主表面から除去するものであることを特徴とする構成A又は構成Bに記載の多層反射膜付き基板の製造方法。
前記処理液は水若しくは純水であることを特徴とする構成C記載の多層反射膜付き基板の製造方法。
さらに前記多層反射膜上に保護膜を形成することを特徴とする構成A~構成Dのいずれか1に記載の多層反射膜付き基板の製造方法。
構成A~Eのいずれか1に記載の多層反射膜付き基板の製造方法により製造された多層反射膜付き基板の多層反射膜上又は保護膜上に、転写パターンとなる吸収体膜を形成することを特徴とする反射型マスクブランクの製造方法。
構成Fに記載の反射型マスクブランクの製造方法により製造された反射型マスクブランクにおける吸収体膜をパターニングして、前記多層反射膜上又は前記保護膜上に吸収体パターンを形成することを特徴とする反射型マスクの製造方法。
20 多層反射膜付き基板
21 多層反射膜
22 保護膜
23 裏面導電膜
24 吸収体膜
27 吸収体パターン
30 反射型マスクブランク
40 反射型マスク
100 CARE(触媒基準エッチング)加工装置
124 処理槽
126 触媒定盤
128 被加工物
130 基板ホルダ
132 回転軸
140 基材
142 白金(触媒)
170 ヒータ
172 熱交換器
174 処理液供給ノズル
176 流体流路
Claims (12)
- 高屈折率層と低屈折率層とを交互に積層した多層反射膜を、マスクブランク用基板の転写パターンが形成される側の主表面上に有する多層反射膜付き基板の製造方法であって、
高屈折率材料と低屈折率材料のターゲットを用いたイオンビームスパッタリングにより、前記主表面上に前記多層反射膜を成膜する工程を有し、
前記イオンビームスパッタリングにおいて、前記多層反射膜の膜表面の1μm×1μmの領域を原子間力顕微鏡で測定して得られる空間周波数1μm-1以上10μm-1以下におけるパワースペクトル密度が20nm4以下であって、且つ、空間周波数10μm-1以上100μm-1以下におけるパワースペクトル密度が10nm4以下となるように、前記高屈折率材料と前記低屈折率材料のスパッタ粒子を前記主表面の法線に対して所定の入射角度で入射させることを特徴とする多層反射膜付き基板の製造方法。 - 前記入射角度が、前記主表面の法線に対して0度以上30度以下であることを特徴とする請求項1に記載の多層反射膜付き基板の製造方法。
- 前記多層反射膜上に保護膜を形成する工程をさらに有し、
該保護膜表面の1μm×1μmの領域を原子間力顕微鏡で測定して得られる空間周波数1μm-1以上10μm-1以下におけるパワースペクトル密度が20nm4以下であって、且つ、空間周波数10μm-1以上100μm-1以下におけるパワースペクトル密度が10nm4以下であることを特徴とする請求項1又は2に記載の多層反射膜付き基板の製造方法。 - 前記マスクブランク用基板の転写パターンが形成される側の主表面の1μm×1μmの領域を原子間力顕微鏡で測定して得られる空間周波数1μm-1以上10μm-1以下におけるパワースペクトル密度が、10nm4以下であることを特徴とする請求項1~3のいずれか1項に記載の多層反射膜付き基板の製造方法。
- 前記マスクブランク用基板が、EEM(Elastic Emission Machining)及び/又は触媒基準エッチング:CARE(CAtalyst-Referred Etching)により表面加工されていることを特徴とする請求項4に記載の多層反射膜付き基板の製造方法。
- 請求項1~5のいずれか1項に記載の多層反射膜付き基板の製造方法により製造された多層反射膜付き基板の多層反射膜上又は保護膜上に、転写パターンとなる吸収体膜を形成することを特徴とする反射型マスクブランクの製造方法。
- 請求項6に記載の反射型マスクブランクの製造方法により製造された反射型マスクブランクにおける吸収体膜をパターニングして、前記多層反射膜上又は前記保護膜上に吸収体パターンを形成することを特徴とする反射型マスクの製造方法。
- マスクブランク用基板の転写パターンが形成される側の主表面上に、高屈折率層と低屈折率層とを交互に積層した多層反射膜を有する多層反射膜付き基板であって、
前記多層反射膜付き基板の膜表面は、1μm×1μmの領域を原子間力顕微鏡で測定して得られる空間周波数1μm-1以上10μm-1以下におけるパワースペクトル密度が20nm4以下であって、且つ、空間周波数10μm-1以上100μm-1以下におけるパワースペクトル密度が10nm4以下であり、
前記膜表面の空間周波数10μm-1以上100μm-1以下における表面粗さが二乗平均平方根粗さ(Rms)で0.13nm未満であることを特徴とする多層反射膜付き基板。 - 前記多層反射膜付き基板が、前記多層反射膜上に保護膜を有し、該保護膜表面の1μm×1μmの領域を原子間力顕微鏡で測定して得られる空間周波数1μm-1以上10μm-1以下におけるパワースペクトル密度が20nm4以下であって、且つ、空間周波数10μm-1以上100μm-1以下におけるパワースペクトル密度が10nm4以下であり、前記保護膜表面の空間周波数10μm-1以上100μm-1以下における表面粗さが二乗平均平方根粗さ(Rms)で0.13nm未満であることを特徴とする請求項8に記載の多層反射膜付き基板。
- 請求項8又は9に記載の多層反射膜付き基板の多層反射膜上又は保護膜上に、転写パターンとなる吸収体膜を有することを特徴とする反射型マスクブランク。
- 請求項10に記載の反射型マスクブランクにおける吸収体膜をパターニングして得られた吸収体パターンを、前記多層反射膜上又は前記保護膜上に有することを特徴とする反射型マスク。
- 請求項11に記載の反射型マスクを用いて、露光装置を使用したリソグラフィープロセスを行い、被転写体上に転写パターンを形成する工程を有することを特徴とする半導体装置の製造方法。
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