SG11202010535YA - Mask blank, phase shift mask, and method of manufacturing semiconductor device - Google Patents

Mask blank, phase shift mask, and method of manufacturing semiconductor device

Info

Publication number
SG11202010535YA
SG11202010535YA SG11202010535YA SG11202010535YA SG11202010535YA SG 11202010535Y A SG11202010535Y A SG 11202010535YA SG 11202010535Y A SG11202010535Y A SG 11202010535YA SG 11202010535Y A SG11202010535Y A SG 11202010535YA SG 11202010535Y A SG11202010535Y A SG 11202010535YA
Authority
SG
Singapore
Prior art keywords
mask
semiconductor device
phase shift
manufacturing semiconductor
mask blank
Prior art date
Application number
SG11202010535YA
Other languages
English (en)
Inventor
Hitoshi Maeda
Hiroaki Shishido
Masahiro Hashimoto
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of SG11202010535YA publication Critical patent/SG11202010535YA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Physical Vapour Deposition (AREA)
SG11202010535YA 2018-05-30 2019-05-08 Mask blank, phase shift mask, and method of manufacturing semiconductor device SG11202010535YA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018103482A JP7109996B2 (ja) 2018-05-30 2018-05-30 マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法
PCT/JP2019/018396 WO2019230313A1 (fr) 2018-05-30 2019-05-08 Ébauche de masque, masque à déphasage et procédé de production de dispositif à semi-conducteur

Publications (1)

Publication Number Publication Date
SG11202010535YA true SG11202010535YA (en) 2020-11-27

Family

ID=68697347

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202010535YA SG11202010535YA (en) 2018-05-30 2019-05-08 Mask blank, phase shift mask, and method of manufacturing semiconductor device

Country Status (7)

Country Link
US (1) US11442357B2 (fr)
JP (1) JP7109996B2 (fr)
KR (1) KR102660488B1 (fr)
CN (1) CN112189167B (fr)
SG (1) SG11202010535YA (fr)
TW (1) TWI801587B (fr)
WO (1) WO2019230313A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102018213056A1 (de) * 2018-08-03 2020-02-06 Robert Bosch Gmbh Verfahren und Vorrichtung zum Ermitteln einer Erklärungskarte
CN113809047B (zh) * 2020-06-12 2024-02-06 长鑫存储技术有限公司 半导体结构及其制备方法

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5054766U (fr) 1973-09-20 1975-05-24
JPS60133831A (ja) * 1983-12-21 1985-07-17 Yamatoyo Shokuhin Kk 漬物の製造法
JP3213345B2 (ja) 1991-08-27 2001-10-02 松下電工株式会社 タイマ付き配線器具
JPH07159981A (ja) * 1993-12-03 1995-06-23 Toshiba Corp 露光用マスク基板
US5629115A (en) 1993-04-30 1997-05-13 Kabushiki Kaisha Toshiba Exposure mask and method and apparatus for manufacturing the same
US5514499A (en) 1993-05-25 1996-05-07 Kabushiki Kaisha Toshiba Phase shifting mask comprising a multilayer structure and method of forming a pattern using the same
JP3115185B2 (ja) 1993-05-25 2000-12-04 株式会社東芝 露光用マスクとパターン形成方法
JPH10186632A (ja) 1996-10-24 1998-07-14 Toppan Printing Co Ltd ハーフトーン型位相シフトマスク用ブランク及びハーフトーン型位相シフトマスク
US5935735A (en) 1996-10-24 1999-08-10 Toppan Printing Co., Ltd. Halftone phase shift mask, blank for the same, and methods of manufacturing these
NL2007303A (en) 2010-09-23 2012-03-26 Asml Netherlands Bv Process tuning with polarization.
JP6005530B2 (ja) 2013-01-15 2016-10-12 Hoya株式会社 マスクブランク、位相シフトマスクおよびこれらの製造方法
WO2014112457A1 (fr) 2013-01-15 2014-07-24 Hoya株式会社 Ébauche de masque, masque de déphasage, et méthode de fabrication d'ébauche de masque et de masque de déphasage
JP6185721B2 (ja) * 2013-01-29 2017-08-23 Hoya株式会社 マスクブランク、マスクブランクの製造方法、転写用マスクの製造方法、および半導体デバイスの製造方法
US9177796B2 (en) * 2013-05-03 2015-11-03 Applied Materials, Inc. Optically tuned hardmask for multi-patterning applications
JP2018063441A (ja) * 2013-11-06 2018-04-19 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランク、ハーフトーン位相シフト型フォトマスク及びパターン露光方法
JP6264238B2 (ja) 2013-11-06 2018-01-24 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランク、ハーフトーン位相シフト型フォトマスク及びパターン露光方法
JP6524614B2 (ja) 2014-05-27 2019-06-05 大日本印刷株式会社 マスクブランクス、ネガ型レジスト膜付きマスクブランクス、位相シフトマスク、およびそれを用いるパターン形成体の製造方法
JP6430155B2 (ja) * 2014-06-19 2018-11-28 Hoya株式会社 マスクブランク、位相シフトマスク、位相シフトマスクの製造方法および半導体デバイスの製造方法
US10481485B2 (en) * 2015-05-15 2019-11-19 Hoya Corporation Mask blank, transfer mask, method of manufacturing transfer mask and method of manufacturing semiconductor device
JP6058757B1 (ja) * 2015-07-15 2017-01-11 Hoya株式会社 マスクブランク、位相シフトマスク、位相シフトマスクの製造方法および半導体デバイスの製造方法
JP6087401B2 (ja) * 2015-08-14 2017-03-01 Hoya株式会社 マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法
TWI684822B (zh) 2015-09-30 2020-02-11 日商Ｈｏｙａ股份有限公司 空白遮罩、相位移轉遮罩及半導體元件之製造方法
JP6328863B1 (ja) * 2016-08-26 2018-05-23 Hoya株式会社 マスクブランク、位相シフトマスク、位相シフトマスクの製造方法及び半導体デバイスの製造方法
JP6271780B2 (ja) * 2017-02-01 2018-01-31 Hoya株式会社 マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法
JP6321265B2 (ja) * 2017-05-29 2018-05-09 Hoya株式会社 マスクブランク、位相シフトマスク、位相シフトマスクの製造方法及び半導体デバイスの製造方法
JP6490786B2 (ja) * 2017-12-25 2019-03-27 Hoya株式会社 マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法

Also Published As

Publication number Publication date
US11442357B2 (en) 2022-09-13
KR102660488B1 (ko) 2024-04-24
US20210208497A1 (en) 2021-07-08
KR20210015777A (ko) 2021-02-10
CN112189167B (zh) 2024-05-03
WO2019230313A1 (fr) 2019-12-05
JP7109996B2 (ja) 2022-08-01
CN112189167A (zh) 2021-01-05
TWI801587B (zh) 2023-05-11
TW202012164A (zh) 2020-04-01
JP2019207361A (ja) 2019-12-05

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