SG11202002853TA - Substrate with a multilayer reflective film, reflective mask blank, reflective mask and method of manufacturing semiconductor device - Google Patents

Substrate with a multilayer reflective film, reflective mask blank, reflective mask and method of manufacturing semiconductor device

Info

Publication number
SG11202002853TA
SG11202002853TA SG11202002853TA SG11202002853TA SG11202002853TA SG 11202002853T A SG11202002853T A SG 11202002853TA SG 11202002853T A SG11202002853T A SG 11202002853TA SG 11202002853T A SG11202002853T A SG 11202002853TA SG 11202002853T A SG11202002853T A SG 11202002853TA
Authority
SG
Singapore
Prior art keywords
reflective mask
reflective
substrate
semiconductor device
manufacturing semiconductor
Prior art date
Application number
SG11202002853TA
Other languages
English (en)
Inventor
Kazuhiro Hamamoto
Tsutomu Shoki
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of SG11202002853TA publication Critical patent/SG11202002853TA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/52—Reflectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
SG11202002853TA 2017-10-17 2018-10-16 Substrate with a multilayer reflective film, reflective mask blank, reflective mask and method of manufacturing semiconductor device SG11202002853TA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017201189 2017-10-17
PCT/JP2018/038501 WO2019078206A1 (ja) 2017-10-17 2018-10-16 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法

Publications (1)

Publication Number Publication Date
SG11202002853TA true SG11202002853TA (en) 2020-05-28

Family

ID=66174168

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202002853TA SG11202002853TA (en) 2017-10-17 2018-10-16 Substrate with a multilayer reflective film, reflective mask blank, reflective mask and method of manufacturing semiconductor device

Country Status (6)

Country Link
US (2) US11262647B2 (ko)
JP (2) JP7286544B2 (ko)
KR (1) KR20200064065A (ko)
SG (1) SG11202002853TA (ko)
TW (1) TW201928503A (ko)
WO (1) WO2019078206A1 (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2019225737A1 (ja) 2018-05-25 2021-06-10 Hoya株式会社 反射型マスクブランク、反射型マスク、並びに反射型マスク及び半導体装置の製造方法
WO2020235612A1 (ja) * 2019-05-21 2020-11-26 Ａｇｃ株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
CN111290224B (zh) * 2020-02-20 2023-04-07 上海华力微电子有限公司 一种单元标记及其设计方法
JP7318607B2 (ja) * 2020-07-28 2023-08-01 Ａｇｃ株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク、ｅｕｖリソグラフィ用反射型マスク、およびそれらの製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005317617A (ja) * 2004-04-27 2005-11-10 Nikon Corp 位置検出用マーク及びそれを備えたレチクル又は感光性基板、位置検出方法、マーク評価方法、及びマーク検出方法とマーク検出装置、並びに露光方法と露光装置
JP2010219445A (ja) 2009-03-18 2010-09-30 Nuflare Technology Inc 荷電粒子ビーム描画方法、荷電粒子ビーム描画用の基準マークの位置検出方法及び荷電粒子ビーム描画装置
JP5385248B2 (ja) 2010-12-06 2014-01-08 株式会社三和スクリーン銘板 導光型装飾樹脂成型品およびその製造方法
JP5935804B2 (ja) 2011-09-01 2016-06-15 旭硝子株式会社 反射型マスクブランク及び反射型マスクブランクの製造方法
JP6460619B2 (ja) 2012-03-12 2019-01-30 Hoya株式会社 反射型マスクブランク及び反射型マスクの製造方法
JP2013222811A (ja) 2012-04-16 2013-10-28 Lasertec Corp Ｅｕｖマスクブランクス、マスクの製造方法、及びアライメント方法
WO2014050891A1 (ja) 2012-09-28 2014-04-03 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランクおよびその製造方法、ならびにｅｕｖリソグラフィ用反射型マスクおよびその製造方法
WO2015146140A1 (ja) 2014-03-24 2015-10-01 凸版印刷株式会社 Ｅｕｖマスクの位相欠陥評価方法、ｅｕｖマスクの製造方法、ｅｕｖマスクブランク及びｅｕｖマスク
JP6713251B2 (ja) * 2015-03-30 2020-06-24 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びにそれらの製造方法
JP6586934B2 (ja) 2015-09-17 2019-10-09 Ａｇｃ株式会社 反射型マスクブランク、及び反射型マスクブランクの製造方法
JP2017075997A (ja) * 2015-10-13 2017-04-20 旭硝子株式会社 反射型マスクブランク、及び反射型マスクブランクの製造方法

Also Published As

Publication number Publication date
WO2019078206A1 (ja) 2019-04-25
US11262647B2 (en) 2022-03-01
TW201928503A (zh) 2019-07-16
KR20200064065A (ko) 2020-06-05
WO2019078206A8 (ja) 2020-02-20
US20200249558A1 (en) 2020-08-06
JP7286544B2 (ja) 2023-06-05
US11681214B2 (en) 2023-06-20
JPWO2019078206A1 (ja) 2020-11-05
US20220146925A1 (en) 2022-05-12
JP2023104997A (ja) 2023-07-28
US20230266658A1 (en) 2023-08-24
JP7500828B2 (ja) 2024-06-17

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