SG11201810486VA - High resistivity single crystal silicon ingot and wafer having improved mechanical strength - Google Patents
High resistivity single crystal silicon ingot and wafer having improved mechanical strengthInfo
- Publication number
- SG11201810486VA SG11201810486VA SG11201810486VA SG11201810486VA SG11201810486VA SG 11201810486V A SG11201810486V A SG 11201810486VA SG 11201810486V A SG11201810486V A SG 11201810486VA SG 11201810486V A SG11201810486V A SG 11201810486VA SG 11201810486V A SG11201810486V A SG 11201810486VA
- Authority
- SG
- Singapore
- Prior art keywords
- missouri
- peters
- international
- wafer
- pearl drive
- Prior art date
Links
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title abstract 3
- 235000012431 wafers Nutrition 0.000 abstract 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- 239000003795 chemical substances by application Substances 0.000 abstract 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- QKSKPIVNLNLAAV-UHFFFAOYSA-N bis(2-chloroethyl) sulfide Chemical compound ClCCSCCCl QKSKPIVNLNLAAV-UHFFFAOYSA-N 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 230000008520 organization Effects 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/007—Pulling on a substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
- C30B15/305—Stirring of the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
- C30B30/04—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
- H01L31/0288—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table characterised by the doping material
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Electromagnetism (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201662347143P | 2016-06-08 | 2016-06-08 | |
US201662347145P | 2016-06-08 | 2016-06-08 | |
PCT/US2017/036061 WO2017214084A1 (en) | 2016-06-08 | 2017-06-06 | High resistivity single crystal silicon ingot and wafer having improved mechanical strength |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201810486VA true SG11201810486VA (en) | 2018-12-28 |
Family
ID=59054332
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10202106913TA SG10202106913TA (en) | 2016-06-08 | 2017-06-06 | High resistivity single crystal silicon ingot and wafer having improved mechanical strength |
SG11201810486VA SG11201810486VA (en) | 2016-06-08 | 2017-06-06 | High resistivity single crystal silicon ingot and wafer having improved mechanical strength |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10202106913TA SG10202106913TA (en) | 2016-06-08 | 2017-06-06 | High resistivity single crystal silicon ingot and wafer having improved mechanical strength |
Country Status (8)
Country | Link |
---|---|
US (3) | US11142844B2 (de) |
EP (2) | EP3469120B1 (de) |
JP (2) | JP6914278B2 (de) |
KR (1) | KR102439602B1 (de) |
CN (2) | CN116314384A (de) |
SG (2) | SG10202106913TA (de) |
TW (2) | TW202217087A (de) |
WO (1) | WO2017214084A1 (de) |
Families Citing this family (11)
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CN116314384A (zh) * | 2016-06-08 | 2023-06-23 | 环球晶圆股份有限公司 | 具有经改进的机械强度的高电阻率单晶硅锭及晶片 |
US10943813B2 (en) * | 2018-07-13 | 2021-03-09 | Globalwafers Co., Ltd. | Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability |
JP7099175B2 (ja) * | 2018-08-27 | 2022-07-12 | 株式会社Sumco | シリコン単結晶の製造方法及びシリコンウェーハ |
US10877089B2 (en) * | 2018-09-24 | 2020-12-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor wafer testing system and related method for improving external magnetic field wafer testing |
KR20210150510A (ko) * | 2019-04-11 | 2021-12-10 | 글로벌웨이퍼스 씨오., 엘티디. | 말기 본체 길이에서 감소된 왜곡을 갖는 잉곳을 준비하기 위한 프로세스 |
CN111733455B (zh) * | 2019-08-29 | 2020-12-08 | 浙江大学 | 共含锗和氮杂质的单晶硅片、其制备方法以及包含所述硅片的集成电路 |
CN111575785B (zh) * | 2020-06-30 | 2021-07-16 | 晶科绿能(上海)管理有限公司 | 单晶硅制备方法、太阳能电池及光伏组件 |
CN111910248B (zh) * | 2020-07-14 | 2022-02-18 | 江苏协鑫硅材料科技发展有限公司 | 铸锭单晶籽晶、铸造单晶硅锭及其制备方法、铸造单晶硅片及其制备方法 |
KR20240004605A (ko) * | 2021-04-28 | 2024-01-11 | 글로벌웨이퍼스 씨오., 엘티디. | 수평 자기장 초크랄스키에 의해 실리콘 잉곳들을 생산하는 방법들 |
JP2023184253A (ja) * | 2022-06-17 | 2023-12-28 | 信越半導体株式会社 | シリコン単結晶の製造方法 |
WO2024101019A1 (ja) * | 2022-11-11 | 2024-05-16 | 信越半導体株式会社 | 高周波デバイス用基板およびその製造方法 |
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- 2017-06-06 SG SG10202106913TA patent/SG10202106913TA/en unknown
- 2017-06-06 WO PCT/US2017/036061 patent/WO2017214084A1/en unknown
- 2017-06-06 CN CN201780035592.2A patent/CN111201341B/zh active Active
- 2017-06-06 EP EP17729735.5A patent/EP3469120B1/de active Active
- 2017-06-06 KR KR1020187035610A patent/KR102439602B1/ko active IP Right Grant
- 2017-06-06 EP EP21217094.8A patent/EP3995608A1/de active Pending
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- 2017-06-06 JP JP2018563827A patent/JP6914278B2/ja active Active
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JP2021169410A (ja) | 2021-10-28 |
KR102439602B1 (ko) | 2022-09-01 |
US11655560B2 (en) | 2023-05-23 |
WO2017214084A1 (en) | 2017-12-14 |
JP7209779B2 (ja) | 2023-01-20 |
US20210404088A1 (en) | 2021-12-30 |
TW202217087A (zh) | 2022-05-01 |
TW201809377A (zh) | 2018-03-16 |
CN111201341A (zh) | 2020-05-26 |
JP2019517454A (ja) | 2019-06-24 |
SG10202106913TA (en) | 2021-08-30 |
KR20190017781A (ko) | 2019-02-20 |
CN116314384A (zh) | 2023-06-23 |
US11655559B2 (en) | 2023-05-23 |
EP3995608A1 (de) | 2022-05-11 |
EP3469120B1 (de) | 2022-02-02 |
US20220056616A1 (en) | 2022-02-24 |
EP3469120A1 (de) | 2019-04-17 |
JP6914278B2 (ja) | 2021-08-04 |
US20200216975A1 (en) | 2020-07-09 |
CN111201341B (zh) | 2023-04-04 |
US11142844B2 (en) | 2021-10-12 |
TWI756227B (zh) | 2022-03-01 |
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