SG11201806670RA - Positive working photosensitive material - Google Patents
Positive working photosensitive materialInfo
- Publication number
- SG11201806670RA SG11201806670RA SG11201806670RA SG11201806670RA SG11201806670RA SG 11201806670R A SG11201806670R A SG 11201806670RA SG 11201806670R A SG11201806670R A SG 11201806670RA SG 11201806670R A SG11201806670R A SG 11201806670RA SG 11201806670R A SG11201806670R A SG 11201806670RA
- Authority
- SG
- Singapore
- Prior art keywords
- international
- somerville
- avenue
- pct
- positive working
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/36—Sulfur-, selenium-, or tellurium-containing compounds
- C08K5/37—Thiols
- C08K5/378—Thiols containing heterocyclic rings
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L53/00—Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers
- C08L53/005—Modified block copolymers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L61/00—Compositions of condensation polymers of aldehydes or ketones; Compositions of derivatives of such polymers
- C08L61/04—Condensation polymers of aldehydes or ketones with phenols only
- C08L61/06—Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
- G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/325—Non-aqueous compositions
- G03F7/327—Non-aqueous alkaline compositions, e.g. anhydrous quaternary ammonium salts
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Medicinal Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Materials For Photolithography (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201662324779P | 2016-04-19 | 2016-04-19 | |
PCT/EP2017/059128 WO2017182441A1 (en) | 2016-04-19 | 2017-04-18 | Positive working photosensitive material |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201806670RA true SG11201806670RA (en) | 2018-09-27 |
Family
ID=58548720
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201806670RA SG11201806670RA (en) | 2016-04-19 | 2017-04-18 | Positive working photosensitive material |
Country Status (9)
Country | Link |
---|---|
US (1) | US10976662B2 (zh) |
EP (1) | EP3446180B1 (zh) |
JP (1) | JP7181090B2 (zh) |
KR (1) | KR102484828B1 (zh) |
CN (1) | CN108885396B (zh) |
PH (1) | PH12018501866A1 (zh) |
SG (1) | SG11201806670RA (zh) |
TW (1) | TWI731961B (zh) |
WO (1) | WO2017182441A1 (zh) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2019098493A1 (ko) * | 2017-11-14 | 2019-05-23 | 주식회사 엘지화학 | 포토레지스트 조성물 |
KR102242548B1 (ko) | 2017-11-14 | 2021-04-20 | 주식회사 엘지화학 | 포토레지스트 조성물 |
JPWO2019146436A1 (ja) * | 2018-01-26 | 2021-01-14 | 日本ゼオン株式会社 | 感光性樹脂組成物及びレンズ |
JP7002966B2 (ja) * | 2018-03-12 | 2022-01-20 | 東京応化工業株式会社 | 化学増幅型ポジ型感光性樹脂組成物、鋳型付き基板の製造方法、及びめっき造形物の製造方法 |
EP3847506A1 (en) * | 2018-09-05 | 2021-07-14 | Merck Patent GmbH | Positive working photosensitive material |
JPWO2020049865A1 (ja) * | 2018-09-05 | 2021-08-12 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、及び電子デバイスの製造方法 |
KR102378414B1 (ko) * | 2018-11-13 | 2022-03-23 | 주식회사 엘지화학 | 광학 부재 |
KR20210144685A (ko) * | 2019-03-27 | 2021-11-30 | 제이에스알 가부시끼가이샤 | 감광성 수지 조성물, 레지스트 패턴막의 제조 방법, 도금 조형물의 제조 방법, 및 주석은 도금 조형물의 제조 방법 |
JP2020165995A (ja) * | 2019-03-28 | 2020-10-08 | メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングMerck Patent GmbH | ポジ型レジスト組成物およびそれを用いたレジストパターンの製造方法 |
JP6999627B2 (ja) | 2019-11-12 | 2022-01-18 | 東京応化工業株式会社 | 化学増幅型感光性組成物の製造方法 |
US20220342308A1 (en) * | 2019-11-13 | 2022-10-27 | Merck Patent Gmbh | Positive working photosensitive materials |
US11822242B2 (en) | 2019-11-14 | 2023-11-21 | Merck Patent Gmbh | DNQ-type photoresist composition including alkali-soluble acrylic resins |
TW202146567A (zh) | 2020-04-27 | 2021-12-16 | 德商馬克專利公司 | 無重氮萘醌(dnq)之化學增幅光阻組合物 |
WO2023088874A1 (en) | 2021-11-17 | 2023-05-25 | Merck Patent Gmbh | Positive tone ultra thick photoresist composition |
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2017
- 2017-04-17 TW TW106112751A patent/TWI731961B/zh active
- 2017-04-18 SG SG11201806670RA patent/SG11201806670RA/en unknown
- 2017-04-18 KR KR1020187033327A patent/KR102484828B1/ko active IP Right Grant
- 2017-04-18 JP JP2018554691A patent/JP7181090B2/ja active Active
- 2017-04-18 EP EP17717730.0A patent/EP3446180B1/en active Active
- 2017-04-18 US US16/079,711 patent/US10976662B2/en active Active
- 2017-04-18 WO PCT/EP2017/059128 patent/WO2017182441A1/en active Application Filing
- 2017-04-18 CN CN201780019801.4A patent/CN108885396B/zh active Active
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Also Published As
Publication number | Publication date |
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KR102484828B1 (ko) | 2023-01-04 |
JP7181090B2 (ja) | 2022-11-30 |
CN108885396A (zh) | 2018-11-23 |
KR20180132900A (ko) | 2018-12-12 |
JP2019514072A (ja) | 2019-05-30 |
EP3446180B1 (en) | 2020-04-01 |
CN108885396B (zh) | 2023-03-24 |
TW201743132A (zh) | 2017-12-16 |
EP3446180A1 (en) | 2019-02-27 |
PH12018501866A1 (en) | 2019-01-28 |
US10976662B2 (en) | 2021-04-13 |
US20190064662A1 (en) | 2019-02-28 |
TWI731961B (zh) | 2021-07-01 |
WO2017182441A1 (en) | 2017-10-26 |
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