SG11201600902WA - Slurry, polishing-liquid set, polishing liquid, method for polishing substrate, and substrate - Google Patents

Slurry, polishing-liquid set, polishing liquid, method for polishing substrate, and substrate

Info

Publication number
SG11201600902WA
SG11201600902WA SG11201600902WA SG11201600902WA SG11201600902WA SG 11201600902W A SG11201600902W A SG 11201600902WA SG 11201600902W A SG11201600902W A SG 11201600902WA SG 11201600902W A SG11201600902W A SG 11201600902WA SG 11201600902W A SG11201600902W A SG 11201600902WA
Authority
SG
Singapore
Prior art keywords
polishing
substrate
liquid
slurry
liquid set
Prior art date
Application number
SG11201600902WA
Other languages
English (en)
Inventor
Hisataka Minami
Tomohiro Iwano
Keita Arakawa
Takahiro Hidaka
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of SG11201600902WA publication Critical patent/SG11201600902WA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H01L21/31055—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG11201600902WA 2013-09-10 2014-07-01 Slurry, polishing-liquid set, polishing liquid, method for polishing substrate, and substrate SG11201600902WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013187493 2013-09-10
PCT/JP2014/067570 WO2015037311A1 (ja) 2013-09-10 2014-07-01 スラリー、研磨液セット、研磨液、基体の研磨方法及び基体

Publications (1)

Publication Number Publication Date
SG11201600902WA true SG11201600902WA (en) 2016-03-30

Family

ID=52665435

Family Applications (2)

Application Number Title Priority Date Filing Date
SG11201600902WA SG11201600902WA (en) 2013-09-10 2014-07-01 Slurry, polishing-liquid set, polishing liquid, method for polishing substrate, and substrate
SG10201801928PA SG10201801928PA (en) 2013-09-10 2014-07-01 Slurry, polishing-liquid set, polishing liquid, method for polishing substrate, and substrate

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG10201801928PA SG10201801928PA (en) 2013-09-10 2014-07-01 Slurry, polishing-liquid set, polishing liquid, method for polishing substrate, and substrate

Country Status (7)

Country Link
US (2) US10752807B2 (ko)
JP (2) JP6520711B2 (ko)
KR (3) KR102361336B1 (ko)
CN (2) CN105518833A (ko)
SG (2) SG11201600902WA (ko)
TW (1) TWI624522B (ko)
WO (1) WO2015037311A1 (ko)

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WO2011111421A1 (ja) 2010-03-12 2011-09-15 日立化成工業株式会社 スラリ、研磨液セット、研磨液及びこれらを用いた基板の研磨方法
WO2012070542A1 (ja) 2010-11-22 2012-05-31 日立化成工業株式会社 スラリー、研磨液セット、研磨液、基板の研磨方法及び基板
CN107617968A (zh) * 2012-02-21 2018-01-23 日立化成株式会社 研磨剂、研磨剂组和基体的研磨方法
KR102034328B1 (ko) 2012-05-22 2019-10-18 히타치가세이가부시끼가이샤 슬러리, 연마액 세트, 연마액, 기체의 연마 방법 및 기체
US10557059B2 (en) 2012-05-22 2020-02-11 Hitachi Chemical Company, Ltd. Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate
SG11201807521WA (en) * 2016-03-11 2018-09-27 Fujifilm Planar Solutions Llc Advanced fluid processing methods and systems
TWI695427B (zh) * 2016-11-24 2020-06-01 聯華電子股份有限公司 平坦化晶圓表面的方法
WO2019069370A1 (ja) * 2017-10-03 2019-04-11 日立化成株式会社 研磨液、研磨液セット、研磨方法及び欠陥抑制方法
WO2020202471A1 (ja) * 2019-04-02 2020-10-08 日立化成株式会社 研磨液、研磨液セット、研磨方法及び欠陥抑制方法
US20240043719A1 (en) * 2020-12-30 2024-02-08 Skc Enpulse Co., Ltd. Polishing composition for semiconductor processing,method for preparing polishing composition, and method for manufacturing semiconductor element to which polishing composition is applied
TW202244210A (zh) 2021-03-24 2022-11-16 日商福吉米股份有限公司 具有氮化矽去除速率增加劑的氮化矽化學機械拋光漿料及其使用方法

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JP4309602B2 (ja) 2001-04-25 2009-08-05 メック株式会社 銅または銅合金と樹脂との接着性を向上させる方法、ならびに積層体
TWI259201B (en) * 2001-12-17 2006-08-01 Hitachi Chemical Co Ltd Slurry for metal polishing and method of polishing with the same
JP4740613B2 (ja) * 2005-03-03 2011-08-03 富士フイルム株式会社 半導体、機能性素子、エレクトロクロミック素子、光学デバイス及び撮影ユニット
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JP5499556B2 (ja) * 2008-11-11 2014-05-21 日立化成株式会社 スラリ及び研磨液セット並びにこれらから得られるｃｍｐ研磨液を用いた基板の研磨方法及び基板
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CN103374330B (zh) * 2010-11-22 2015-10-14 日立化成株式会社 磨粒的制造方法、悬浮液的制造方法以及研磨液的制造方法
WO2012070542A1 (ja) 2010-11-22 2012-05-31 日立化成工業株式会社 スラリー、研磨液セット、研磨液、基板の研磨方法及び基板
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CN107617968A (zh) * 2012-02-21 2018-01-23 日立化成株式会社 研磨剂、研磨剂组和基体的研磨方法
JP2015088495A (ja) * 2012-02-21 2015-05-07 日立化成株式会社 研磨剤、研磨剤セット及び基体の研磨方法
SG11201407029XA (en) * 2012-05-22 2014-12-30 Hitachi Chemical Co Ltd Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate
US9633863B2 (en) * 2012-07-11 2017-04-25 Cabot Microelectronics Corporation Compositions and methods for selective polishing of silicon nitride materials
KR102137293B1 (ko) * 2012-08-30 2020-07-23 히타치가세이가부시끼가이샤 연마제, 연마제 세트 및 기체의 연마 방법
JP6428625B2 (ja) * 2013-08-30 2018-11-28 日立化成株式会社 スラリー、研磨液セット、研磨液、及び、基体の研磨方法
CN114344461A (zh) * 2018-12-20 2022-04-15 美勒斯公司 用于治疗疾病的CLEC12AxCD3双特异性抗体和方法

Also Published As

Publication number Publication date
US20200325360A1 (en) 2020-10-15
KR20220025104A (ko) 2022-03-03
JP2019149548A (ja) 2019-09-05
TW201516103A (zh) 2015-05-01
US11578236B2 (en) 2023-02-14
CN105518833A (zh) 2016-04-20
SG10201801928PA (en) 2018-04-27
JP6520711B2 (ja) 2019-05-29
US10752807B2 (en) 2020-08-25
JP6775739B2 (ja) 2020-10-28
JPWO2015037311A1 (ja) 2017-03-02
KR20210052582A (ko) 2021-05-10
US20160222252A1 (en) 2016-08-04
CN111378416A (zh) 2020-07-07
KR20160054466A (ko) 2016-05-16
TWI624522B (zh) 2018-05-21
WO2015037311A1 (ja) 2015-03-19
KR102361336B1 (ko) 2022-02-14
KR102517248B1 (ko) 2023-04-03

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