SG10201801928PA - Slurry, polishing-liquid set, polishing liquid, method for polishing substrate, and substrate - Google Patents

Slurry, polishing-liquid set, polishing liquid, method for polishing substrate, and substrate

Info

Publication number
SG10201801928PA
SG10201801928PA SG10201801928PA SG10201801928PA SG10201801928PA SG 10201801928P A SG10201801928P A SG 10201801928PA SG 10201801928P A SG10201801928P A SG 10201801928PA SG 10201801928P A SG10201801928P A SG 10201801928PA SG 10201801928P A SG10201801928P A SG 10201801928PA
Authority
SG
Singapore
Prior art keywords
polishing
substrate
liquid
slurry
liquid set
Prior art date
Application number
SG10201801928PA
Inventor
Hisataka Minami
Tomohiro Iwano
Keita Arakawa
Takahiro Hidaka
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of SG10201801928PA publication Critical patent/SG10201801928PA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H01L21/31055—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching
SG10201801928PA 2013-09-10 2014-07-01 Slurry, polishing-liquid set, polishing liquid, method for polishing substrate, and substrate SG10201801928PA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013187493 2013-09-10

Publications (1)

Publication Number Publication Date
SG10201801928PA true SG10201801928PA (en) 2018-04-27

Family

ID=52665435

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201801928PA SG10201801928PA (en) 2013-09-10 2014-07-01 Slurry, polishing-liquid set, polishing liquid, method for polishing substrate, and substrate
SG11201600902WA SG11201600902WA (en) 2013-09-10 2014-07-01 Slurry, polishing-liquid set, polishing liquid, method for polishing substrate, and substrate

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG11201600902WA SG11201600902WA (en) 2013-09-10 2014-07-01 Slurry, polishing-liquid set, polishing liquid, method for polishing substrate, and substrate

Country Status (7)

Country Link
US (2) US10752807B2 (en)
JP (2) JP6520711B2 (en)
KR (3) KR20160054466A (en)
CN (2) CN111378416A (en)
SG (2) SG10201801928PA (en)
TW (1) TWI624522B (en)
WO (1) WO2015037311A1 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102666014B (en) 2010-03-12 2017-10-31 日立化成株式会社 Suspension, lapping liquid set agent, lapping liquid and the Ginding process using their substrate
US9881801B2 (en) 2010-11-22 2018-01-30 Hitachi Chemical Company, Ltd. Slurry, polishing liquid set, polishing liquid, method for polishing substrate, and substrate
JP6044630B2 (en) * 2012-02-21 2016-12-14 日立化成株式会社 Abrasive, abrasive set, and substrate polishing method
CN104321854B (en) 2012-05-22 2017-06-20 日立化成株式会社 Suspension, lapping liquid set agent, lapping liquid, the Ginding process and matrix of matrix
WO2013175859A1 (en) 2012-05-22 2013-11-28 日立化成株式会社 Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate
SG11201807521WA (en) * 2016-03-11 2018-09-27 Fujifilm Planar Solutions Llc Advanced fluid processing methods and systems
TWI695427B (en) * 2016-11-24 2020-06-01 聯華電子股份有限公司 Method for planarizing wafer surface
WO2019069370A1 (en) * 2017-10-03 2019-04-11 日立化成株式会社 Polishing liquid, polishing liquid set, polishing method, and defect inhibition method
KR20210135310A (en) 2019-04-02 2021-11-12 쇼와덴코머티리얼즈가부시끼가이샤 Polishing liquid, polishing liquid set, polishing method and defect suppression method
US20240043719A1 (en) * 2020-12-30 2024-02-08 Skc Enpulse Co., Ltd. Polishing composition for semiconductor processing,method for preparing polishing composition, and method for manufacturing semiconductor element to which polishing composition is applied

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1369906B1 (en) 2001-02-20 2012-06-27 Hitachi Chemical Company, Ltd. Polishing compound and method for polishing substrate
JP4309602B2 (en) 2001-04-25 2009-08-05 メック株式会社 Method for improving adhesion between copper or copper alloy and resin, and laminate
TWI259201B (en) * 2001-12-17 2006-08-01 Hitachi Chemical Co Ltd Slurry for metal polishing and method of polishing with the same
JP4740613B2 (en) * 2005-03-03 2011-08-03 富士フイルム株式会社 Semiconductor, functional element, electrochromic element, optical device and photographing unit
US8551202B2 (en) * 2006-03-23 2013-10-08 Cabot Microelectronics Corporation Iodate-containing chemical-mechanical polishing compositions and methods
JP5401766B2 (en) * 2006-04-21 2014-01-29 日立化成株式会社 CMP polishing agent and substrate polishing method
US7550092B2 (en) * 2006-06-19 2009-06-23 Epoch Material Co., Ltd. Chemical mechanical polishing composition
CN101622695A (en) 2007-02-27 2010-01-06 日立化成工业株式会社 CMP slurry for silicon film
WO2009008431A1 (en) * 2007-07-10 2009-01-15 Hitachi Chemical Co., Ltd. Metal film polishing liquid and polishing method
US7931714B2 (en) * 2007-10-08 2011-04-26 Uwiz Technology Co., Ltd. Composition useful to chemical mechanical planarization of metal
JP5423669B2 (en) * 2008-04-23 2014-02-19 日立化成株式会社 Abrasive and substrate polishing method using the abrasive
JP5499556B2 (en) * 2008-11-11 2014-05-21 日立化成株式会社 Slurry and polishing liquid set, and substrate polishing method and substrate using CMP polishing liquid obtained therefrom
US8883034B2 (en) * 2009-09-16 2014-11-11 Brian Reiss Composition and method for polishing bulk silicon
JP4894981B2 (en) * 2009-10-22 2012-03-14 日立化成工業株式会社 Abrasive, concentrated one-part abrasive, two-part abrasive and substrate polishing method
KR101359092B1 (en) * 2009-11-11 2014-02-05 가부시키가이샤 구라레 Slurry for chemical mechanical polishing and polishing method for substrate using same
US20110177623A1 (en) * 2010-01-15 2011-07-21 Confluense Llc Active Tribology Management of CMP Polishing Material
CN102666014B (en) * 2010-03-12 2017-10-31 日立化成株式会社 Suspension, lapping liquid set agent, lapping liquid and the Ginding process using their substrate
JP5544244B2 (en) * 2010-08-09 2014-07-09 株式会社フジミインコーポレーテッド Polishing composition and polishing method
US8273142B2 (en) * 2010-09-02 2012-09-25 Cabot Microelectronics Corporation Silicon polishing compositions with high rate and low defectivity
KR101886895B1 (en) * 2010-11-22 2018-08-08 히타치가세이가부시끼가이샤 Slurry, polishing liquid set, polishing liquid, method for polishing substrate, and substrate
CN103450847A (en) 2010-11-22 2013-12-18 日立化成株式会社 Method for producing abrasive grains, method for producing slurry, and method for producing polishing liquid
US9881801B2 (en) 2010-11-22 2018-01-30 Hitachi Chemical Company, Ltd. Slurry, polishing liquid set, polishing liquid, method for polishing substrate, and substrate
JP5979871B2 (en) * 2011-03-09 2016-08-31 花王株式会社 Manufacturing method of magnetic disk substrate
JP6044630B2 (en) * 2012-02-21 2016-12-14 日立化成株式会社 Abrasive, abrasive set, and substrate polishing method
JP2015088495A (en) * 2012-02-21 2015-05-07 日立化成株式会社 Polishing material, polishing material set, and method for polishing base material
CN104334675B (en) * 2012-05-22 2016-10-26 日立化成株式会社 The set agent of suspension, lapping liquid, lapping liquid, the Ginding process of matrix and matrix
US9633863B2 (en) * 2012-07-11 2017-04-25 Cabot Microelectronics Corporation Compositions and methods for selective polishing of silicon nitride materials
SG11201501334RA (en) * 2012-08-30 2015-05-28 Hitachi Chemical Co Ltd Polishing agent, polishing agent set and method for polishing base
JP6428625B2 (en) * 2013-08-30 2018-11-28 日立化成株式会社 Slurry, polishing liquid set, polishing liquid, and substrate polishing method
CN114344461A (en) * 2018-12-20 2022-04-15 美勒斯公司 CLEC12AxCD3 bispecific antibodies and methods for treating disease

Also Published As

Publication number Publication date
US20160222252A1 (en) 2016-08-04
WO2015037311A1 (en) 2015-03-19
US11578236B2 (en) 2023-02-14
JP2019149548A (en) 2019-09-05
KR102517248B1 (en) 2023-04-03
JP6520711B2 (en) 2019-05-29
JPWO2015037311A1 (en) 2017-03-02
JP6775739B2 (en) 2020-10-28
US10752807B2 (en) 2020-08-25
CN111378416A (en) 2020-07-07
CN105518833A (en) 2016-04-20
TW201516103A (en) 2015-05-01
KR102361336B1 (en) 2022-02-14
KR20160054466A (en) 2016-05-16
KR20210052582A (en) 2021-05-10
KR20220025104A (en) 2022-03-03
TWI624522B (en) 2018-05-21
US20200325360A1 (en) 2020-10-15
SG11201600902WA (en) 2016-03-30

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