SG11201506001VA - Polishing composition, method for producing polishing composition and method for producing polished article - Google Patents

Polishing composition, method for producing polishing composition and method for producing polished article

Info

Publication number
SG11201506001VA
SG11201506001VA SG11201506001VA SG11201506001VA SG11201506001VA SG 11201506001V A SG11201506001V A SG 11201506001VA SG 11201506001V A SG11201506001V A SG 11201506001VA SG 11201506001V A SG11201506001V A SG 11201506001VA SG 11201506001V A SG11201506001V A SG 11201506001VA
Authority
SG
Singapore
Prior art keywords
polishing composition
producing
polished article
article
producing polished
Prior art date
Application number
SG11201506001VA
Other languages
English (en)
Inventor
Kohsuke Tsuchiya
Hisanori Tansho
Maki Asada
Yusuke Suga
Original Assignee
Fujimi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujimi Inc filed Critical Fujimi Inc
Publication of SG11201506001VA publication Critical patent/SG11201506001VA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/129—Preparing bulk and homogeneous wafers by polishing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Composite Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG11201506001VA 2013-02-13 2014-02-10 Polishing composition, method for producing polishing composition and method for producing polished article SG11201506001VA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013026020 2013-02-13
PCT/JP2014/053065 WO2014126051A1 (ja) 2013-02-13 2014-02-10 研磨用組成物、研磨用組成物製造方法および研磨物製造方法

Publications (1)

Publication Number Publication Date
SG11201506001VA true SG11201506001VA (en) 2015-09-29

Family

ID=51354053

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201506001VA SG11201506001VA (en) 2013-02-13 2014-02-10 Polishing composition, method for producing polishing composition and method for producing polished article

Country Status (8)

Country Link
US (1) US20150376464A1 (https=)
EP (1) EP2957613B1 (https=)
JP (2) JP5897200B2 (https=)
KR (1) KR102226441B1 (https=)
CN (1) CN104995277B (https=)
SG (1) SG11201506001VA (https=)
TW (1) TWI624536B (https=)
WO (1) WO2014126051A1 (https=)

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US10717899B2 (en) 2013-03-19 2020-07-21 Fujimi Incorporated Polishing composition, method for producing polishing composition and polishing composition preparation kit
JP6314019B2 (ja) * 2014-03-31 2018-04-18 ニッタ・ハース株式会社 半導体基板の研磨方法
JP6185432B2 (ja) 2014-06-24 2017-08-23 株式会社フジミインコーポレーテッド シリコンウェーハ研磨用組成物
CN107001916B (zh) * 2014-12-05 2019-01-22 3M创新有限公司 磨料组合物
KR102594932B1 (ko) * 2015-05-08 2023-10-27 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물
JP6582601B2 (ja) * 2015-06-22 2019-10-02 日立化成株式会社 研磨液、貯蔵液及び研磨方法
JP6797796B2 (ja) * 2015-07-01 2020-12-09 東亞合成株式会社 研磨用濡れ剤及び研磨液組成物
CN109476116B (zh) 2016-04-28 2021-07-16 自然工作有限责任公司 具有包含耐热聚合物层和聚丙交酯树脂层的多层片材的饰面的聚合物泡沫隔热结构
WO2018061365A1 (ja) * 2016-09-28 2018-04-05 株式会社フジミインコーポレーテッド 表面処理組成物
CN110167879A (zh) * 2016-10-28 2019-08-23 株式会社德山 气相二氧化硅及其制备方法
JP6792413B2 (ja) * 2016-10-31 2020-11-25 花王株式会社 シリコンウェーハ用研磨液組成物
EP3546542A4 (en) * 2016-11-22 2020-07-22 Fujimi Incorporated POLISHING COMPOSITION
US20200010727A1 (en) * 2017-02-20 2020-01-09 Fujimi Incorporated Intermediate polishing composition for silicon substrate and polishing composition set for silicon substrate
JP6879798B2 (ja) * 2017-03-30 2021-06-02 株式会社フジミインコーポレーテッド 研磨用組成物および研磨方法
JP7074525B2 (ja) * 2017-03-30 2022-05-24 株式会社フジミインコーポレーテッド 研磨用組成物および研磨方法
EP3605588A4 (en) * 2017-03-31 2021-01-13 Fujimi Incorporated POLISHING COMPOSITION
JP7148506B2 (ja) * 2017-05-26 2022-10-05 株式会社フジミインコーポレーテッド 研磨用組成物およびこれを用いた研磨方法
EP3410236B1 (fr) * 2017-05-29 2021-02-17 The Swatch Group Research and Development Ltd Dispositif et procede d'ajustement de marche et correction d'etat d'une montre
KR102617007B1 (ko) * 2017-07-21 2023-12-27 가부시키가이샤 후지미인코퍼레이티드 기판의 연마 방법 및 연마용 조성물 세트
US11649377B2 (en) * 2017-08-14 2023-05-16 Resonac Corporation Polishing liquid, polishing liquid set and polishing method
JP6929239B2 (ja) * 2018-03-30 2021-09-01 株式会社フジミインコーポレーテッド 研磨用組成物および研磨方法
EP3819353A4 (en) * 2018-07-04 2022-03-30 Sumitomo Seika Chemicals Co., Ltd. POLISHING COMPOSITION
JP7424768B2 (ja) * 2019-08-08 2024-01-30 株式会社フジミインコーポレーテッド 研磨用添加剤含有液の濾過方法、研磨用添加剤含有液、研磨用組成物、研磨用組成物の製造方法およびフィルタ
EP3792327B1 (en) * 2019-09-11 2025-05-28 Fujimi Incorporated Polishing composition, polishing method and method for manufacturing semiconductor substrate
EP4119292B1 (en) * 2020-03-13 2026-02-18 Fujimi Incorporated Polishing composition and polishing method
CN112175524B (zh) * 2020-09-21 2022-02-15 万华化学集团电子材料有限公司 一种蓝宝石抛光组合物及其应用
KR102492236B1 (ko) * 2020-12-17 2023-01-26 에스케이실트론 주식회사 연마장치 및 웨이퍼의 연마방법
WO2023181928A1 (ja) 2022-03-23 2023-09-28 株式会社フジミインコーポレーテッド 研磨用組成物

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JP2011171689A (ja) * 2009-07-07 2011-09-01 Kao Corp シリコンウエハ用研磨液組成物
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JP5441578B2 (ja) * 2009-09-11 2014-03-12 花王株式会社 研磨液組成物
JP5321430B2 (ja) * 2009-12-02 2013-10-23 信越半導体株式会社 シリコンウェーハ研磨用研磨剤およびシリコンウェーハの研磨方法
JP5492603B2 (ja) * 2010-03-02 2014-05-14 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
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JP2012079964A (ja) * 2010-10-04 2012-04-19 Nissan Chem Ind Ltd 半導体ウェーハ用研磨液組成物
US20130302984A1 (en) * 2011-01-26 2013-11-14 Fujimi Incorporated Polishing composition, polishing method using same, and substrate production method
KR20140034231A (ko) * 2011-05-24 2014-03-19 가부시키가이샤 구라레 화학 기계 연마용 부식 방지제, 화학 기계 연마용 슬러리, 및 화학 기계 연마 방법
JP2014041978A (ja) * 2012-08-23 2014-03-06 Fujimi Inc 研磨用組成物、研磨用組成物の製造方法、及び研磨用組成物原液の製造方法

Also Published As

Publication number Publication date
WO2014126051A1 (ja) 2014-08-21
JP2016138278A (ja) 2016-08-04
CN104995277A (zh) 2015-10-21
US20150376464A1 (en) 2015-12-31
EP2957613A4 (en) 2016-11-09
TW201443212A (zh) 2014-11-16
JP6387032B2 (ja) 2018-09-05
JP5897200B2 (ja) 2016-03-30
TWI624536B (zh) 2018-05-21
KR20150119062A (ko) 2015-10-23
EP2957613A1 (en) 2015-12-23
EP2957613B1 (en) 2020-11-18
KR102226441B1 (ko) 2021-03-12
JPWO2014126051A1 (ja) 2017-02-02
CN104995277B (zh) 2018-05-08

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