SG10202002650XA - Copper alloy bonding wire for semiconductor devices - Google Patents

Copper alloy bonding wire for semiconductor devices

Info

Publication number
SG10202002650XA
SG10202002650XA SG10202002650XA SG10202002650XA SG10202002650XA SG 10202002650X A SG10202002650X A SG 10202002650XA SG 10202002650X A SG10202002650X A SG 10202002650XA SG 10202002650X A SG10202002650X A SG 10202002650XA SG 10202002650X A SG10202002650X A SG 10202002650XA
Authority
SG
Singapore
Prior art keywords
semiconductor devices
copper alloy
bonding wire
alloy bonding
wire
Prior art date
Application number
SG10202002650XA
Other languages
English (en)
Inventor
Daizo Oda
Takashi Yamada
Motoki Eto
Teruo Haibara
Tomohiro Uno
Original Assignee
Nippon Micrometal Corp
Nippon Steel Chemical & Material Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Micrometal Corp, Nippon Steel Chemical & Material Co Ltd filed Critical Nippon Micrometal Corp
Publication of SG10202002650XA publication Critical patent/SG10202002650XA/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/49—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0227—Rods, wires
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/302—Cu as the principal constituent
    • C—CHEMISTRY; METALLURGY
    • C21—METALLURGY OF IRON
    • C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
    • C21D9/00—Heat treatment, e.g. annealing, hardening, quenching or tempering, adapted for particular articles; Furnaces therefor
    • C21D9/52—Heat treatment, e.g. annealing, hardening, quenching or tempering, adapted for particular articles; Furnaces therefor for wires; for strips ; for rods of unlimited length
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    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
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    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
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    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
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    • C22C—ALLOYS
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    • C22C9/04—Alloys based on copper with zinc as the next major constituent
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    • C22C—ALLOYS
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    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
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    • C22F1/02—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working in inert or controlled atmosphere or vacuum
    • C—CHEMISTRY; METALLURGY
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    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
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    • C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
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SG10202002650XA 2016-06-20 2017-06-13 Copper alloy bonding wire for semiconductor devices SG10202002650XA (en)

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Families Citing this family (20)

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Publication number Priority date Publication date Assignee Title
DE112018000061B4 (de) 2017-02-22 2021-12-09 Nippon Micrometal Corporation Bonddraht für Halbleiterbauelement
JP6371932B1 (ja) * 2017-02-22 2018-08-08 新日鉄住金マテリアルズ株式会社 半導体装置用ボンディングワイヤ
US10985130B2 (en) 2018-09-21 2021-04-20 Nippon Steel Chemical & Material Co., Ltd. Cu alloy bonding wire for semiconductor device
JP6651065B1 (ja) * 2018-09-21 2020-02-19 日鉄ケミカル＆マテリアル株式会社 半導体装置用Ｃｕ合金ボンディングワイヤ
WO2020100281A1 (ja) 2018-11-16 2020-05-22 株式会社日立ハイテク 放射線分析装置
JP6507329B1 (ja) * 2019-02-08 2019-04-24 田中電子工業株式会社 パラジウム被覆銅ボンディングワイヤ、ワイヤ接合構造、半導体装置及び半導体装置の製造方法
JP6807426B2 (ja) 2019-04-12 2021-01-06 田中電子工業株式会社 金被覆銀ボンディングワイヤとその製造方法、及び半導体装置とその製造方法
WO2021111908A1 (ja) 2019-12-02 2021-06-10 日鉄マイクロメタル株式会社 半導体装置用銅ボンディングワイヤ及び半導体装置
JP2021098886A (ja) * 2019-12-20 2021-07-01 Ｊｘ金属株式会社 積層造形用金属粉末及び該金属粉末を用いて作製した積層造形物
US20230105851A1 (en) 2020-02-21 2023-04-06 Nippon Micrometal Corporation Copper bonding wire
CN113512660A (zh) * 2021-04-09 2021-10-19 江西腾江铜业有限公司 一种耐腐蚀铜丝及其制备方法
US11721660B2 (en) 2021-06-25 2023-08-08 Nippon Micrometal Corporation Bonding wire for semiconductor devices
CN117581341A (zh) 2021-06-25 2024-02-20 日铁新材料股份有限公司 半导体装置用接合线
KR20240026928A (ko) 2021-06-25 2024-02-29 닛데쓰마이크로메탈가부시키가이샤 반도체 장치용 본딩 와이어
US11929343B2 (en) 2021-06-25 2024-03-12 Nippon Micrometal Corporation Bonding wire for semiconductor devices
WO2022270050A1 (ja) 2021-06-25 2022-12-29 日鉄マイクロメタル株式会社 半導体装置用ボンディングワイヤ
EP4361299A1 (en) 2021-06-25 2024-05-01 Nippon Micrometal Corporation Bonding wire for semiconductor device
TWI796739B (zh) * 2021-07-26 2023-03-21 樂金股份有限公司 合金銲線
JP7295352B1 (ja) 2022-06-24 2023-06-20 日鉄ケミカル＆マテリアル株式会社 半導体装置用ボンディングワイヤ
WO2023248491A1 (ja) 2022-06-24 2023-12-28 日鉄ケミカル＆マテリアル株式会社 半導体装置用ボンディングワイヤ

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3104960A1 (de) 1981-02-12 1982-08-26 W.C. Heraeus Gmbh, 6450 Hanau "feinstdraht"
JPS6120693A (ja) * 1984-07-06 1986-01-29 Toshiba Corp ボンデイングワイヤ−
JPS6148543A (ja) 1984-08-10 1986-03-10 Sumitomo Electric Ind Ltd 半導体素子結線用銅合金線
JPS61234556A (ja) * 1985-04-11 1986-10-18 Mitsubishi Electric Corp ボンデイング用ワイヤ
DE3916168A1 (de) 1988-05-18 1989-11-30 Mitsubishi Metal Corp Ultrafeine draehte aus einer kupferlegierung und halbleitervorrichtungen unter verwendung derselben
JPH04184946A (ja) * 1990-11-20 1992-07-01 Mitsubishi Materials Corp 半導体装置用銅合金極細線及び半導体装置
JPH07138679A (ja) * 1994-05-09 1995-05-30 Toshiba Corp ボンディングワイヤー
JP2501305B2 (ja) 1994-06-06 1996-05-29 株式会社東芝 半導体装置
JPH11121673A (ja) * 1997-10-09 1999-04-30 Toppan Printing Co Ltd リードフレーム
JP4345075B2 (ja) * 1999-03-26 2009-10-14 Ｄｏｗａホールディングス株式会社 ワイアーボンディング性およびダイボンディング性に優れた銅及び銅基合金とその製造方法
US8610291B2 (en) * 2006-08-31 2013-12-17 Nippon Steel & Sumikin Materials Co., Ltd. Copper alloy bonding wire for semiconductor device
JP4691533B2 (ja) * 2006-08-31 2011-06-01 新日鉄マテリアルズ株式会社 半導体装置用銅合金ボンディングワイヤ
JP4705078B2 (ja) * 2006-08-31 2011-06-22 新日鉄マテリアルズ株式会社 半導体装置用銅合金ボンディングワイヤ
SG177358A1 (en) * 2009-06-24 2012-02-28 Nippon Steel Materials Co Ltd Copper alloy bonding wire for semiconductor
JP4771562B1 (ja) * 2011-02-10 2011-09-14 田中電子工業株式会社 Ａｇ−Ａｕ−Ｐｄ三元合金系ボンディングワイヤ
SG190481A1 (en) * 2011-12-01 2013-06-28 Heraeus Materials Tech Gmbh Alloyed 2n copper wire for bonding in microelectronics device
SG190480A1 (en) * 2011-12-01 2013-06-28 Heraeus Materials Tech Gmbh 3n copper wire with trace additions for bonding in microelectronics device
KR101366688B1 (ko) * 2012-04-30 2014-02-25 엠케이전자 주식회사 구리계 본딩 와이어 및 이를 포함하는 반도체 패키지
JP5219316B1 (ja) * 2012-09-28 2013-06-26 田中電子工業株式会社 半導体装置接続用銅白金合金細線
JP5213146B1 (ja) * 2012-10-03 2013-06-19 田中電子工業株式会社 半導体装置接続用銅ロジウム合金細線
TW201430977A (zh) * 2013-01-23 2014-08-01 Heraeus Materials Tech Gmbh 用於接合應用的經塗覆線材
JP5546670B1 (ja) * 2013-06-13 2014-07-09 田中電子工業株式会社 超音波接合用コーティング銅ワイヤの構造
KR101902091B1 (ko) * 2014-04-21 2018-09-27 신닛테츠스미킹 마테리알즈 가부시키가이샤 반도체 장치용 본딩 와이어
CA2854299C (en) * 2014-06-12 2021-03-23 Alexander D. Kanaris Conveyor drive roller with cooling means
EP3029167B1 (en) * 2014-07-10 2023-10-25 NIPPON STEEL Chemical & Material Co., Ltd. Bonding wire for semiconductor device
TWI510652B (zh) * 2014-07-15 2015-12-01 Tanaka Electronics Ind Construction of thin copper alloy wire for copper alloy for joining semiconductor device
CN105390463B (zh) * 2014-08-22 2018-02-09 田中电子工业株式会社 半导体装置接合用铜稀薄镍合金线的构造
CN105405828B (zh) * 2014-09-15 2018-01-12 田中电子工业株式会社 超声波接合用纯铜合金线的剖面构造
CN106489199B (zh) 2015-06-15 2019-09-03 日铁新材料股份有限公司 半导体装置用接合线
KR101670209B1 (ko) * 2015-06-15 2016-10-27 닛데쓰스미킹 마이크로 메탈 가부시키가이샤 반도체 장치용 본딩 와이어
WO2017013796A1 (ja) * 2015-07-23 2017-01-26 日鉄住金マイクロメタル株式会社 半導体装置用ボンディングワイヤ

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US20230018430A1 (en) 2023-01-19

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