SG10201804881QA - Plasma processing apparatus and plasma processing method - Google Patents
Plasma processing apparatus and plasma processing methodInfo
- Publication number
- SG10201804881QA SG10201804881QA SG10201804881QA SG10201804881QA SG10201804881QA SG 10201804881Q A SG10201804881Q A SG 10201804881QA SG 10201804881Q A SG10201804881Q A SG 10201804881QA SG 10201804881Q A SG10201804881Q A SG 10201804881QA SG 10201804881Q A SG10201804881Q A SG 10201804881QA
- Authority
- SG
- Singapore
- Prior art keywords
- frequency power
- plasma processing
- high frequency
- processing apparatus
- supply
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32366—Localised processing
- H01J37/32385—Treating the edge of the workpieces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32577—Electrical connecting means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
- H01J37/32706—Polarising the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/3299—Feedback systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/245—Detection characterised by the variable being measured
- H01J2237/24564—Measurements of electric or magnetic variables, e.g. voltage, current, frequency
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017116950A JP6826955B2 (ja) | 2017-06-14 | 2017-06-14 | プラズマ処理装置及びプラズマ処理方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG10201804881QA true SG10201804881QA (en) | 2019-01-30 |
Family
ID=64658264
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201804881QA SG10201804881QA (en) | 2017-06-14 | 2018-06-08 | Plasma processing apparatus and plasma processing method |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10431433B2 (enExample) |
| JP (1) | JP6826955B2 (enExample) |
| KR (1) | KR102494181B1 (enExample) |
| CN (1) | CN109087843B (enExample) |
| SG (1) | SG10201804881QA (enExample) |
| TW (1) | TWI740049B (enExample) |
Families Citing this family (74)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103718270B (zh) * | 2011-05-05 | 2017-10-03 | 岛津研究实验室（欧洲）有限公司 | 操纵带电粒子的装置 |
| US9873180B2 (en) | 2014-10-17 | 2018-01-23 | Applied Materials, Inc. | CMP pad construction with composite material properties using additive manufacturing processes |
| US9776361B2 (en) | 2014-10-17 | 2017-10-03 | Applied Materials, Inc. | Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles |
| US10875153B2 (en) | 2014-10-17 | 2020-12-29 | Applied Materials, Inc. | Advanced polishing pad materials and formulations |
| US11745302B2 (en) | 2014-10-17 | 2023-09-05 | Applied Materials, Inc. | Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process |
| CN113579992A (zh) | 2014-10-17 | 2021-11-02 | 应用材料公司 | 使用加成制造工艺的具复合材料特性的cmp衬垫建构 |
| US10593574B2 (en) | 2015-11-06 | 2020-03-17 | Applied Materials, Inc. | Techniques for combining CMP process tracking data with 3D printed CMP consumables |
| US10391605B2 (en) | 2016-01-19 | 2019-08-27 | Applied Materials, Inc. | Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process |
| US10763081B2 (en) | 2017-07-10 | 2020-09-01 | Applied Materials, Inc. | Apparatus and methods for manipulating radio frequency power at an edge ring in plasma process device |
| US11471999B2 (en) | 2017-07-26 | 2022-10-18 | Applied Materials, Inc. | Integrated abrasive polishing pads and manufacturing methods |
| US10510575B2 (en) | 2017-09-20 | 2019-12-17 | Applied Materials, Inc. | Substrate support with multiple embedded electrodes |
| US10763150B2 (en) * | 2017-09-20 | 2020-09-01 | Applied Materials, Inc. | System for coupling a voltage to spatially segmented portions of the wafer with variable voltage |
| JP7037964B2 (ja) * | 2018-03-09 | 2022-03-17 | 東京エレクトロン株式会社 | 測定器、及びフォーカスリングを検査するためのシステムの動作方法 |
| JP2019186098A (ja) * | 2018-04-12 | 2019-10-24 | 東京エレクトロン株式会社 | プラズマを生成する方法 |
| JP7061922B2 (ja) * | 2018-04-27 | 2022-05-02 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| US10555412B2 (en) | 2018-05-10 | 2020-02-04 | Applied Materials, Inc. | Method of controlling ion energy distribution using a pulse generator with a current-return output stage |
| JP6846384B2 (ja) * | 2018-06-12 | 2021-03-24 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理装置の高周波電源を制御する方法 |
| US10847347B2 (en) | 2018-08-23 | 2020-11-24 | Applied Materials, Inc. | Edge ring assembly for a substrate support in a plasma processing chamber |
| KR20210042171A (ko) | 2018-09-04 | 2021-04-16 | 어플라이드 머티어리얼스, 인코포레이티드 | 진보한 폴리싱 패드들을 위한 제형들 |
| KR102595900B1 (ko) * | 2018-11-13 | 2023-10-30 | 삼성전자주식회사 | 플라즈마 처리 장치 |
| US11476145B2 (en) | 2018-11-20 | 2022-10-18 | Applied Materials, Inc. | Automatic ESC bias compensation when using pulsed DC bias |
| US11361947B2 (en) * | 2019-01-09 | 2022-06-14 | Tokyo Electron Limited | Apparatus for plasma processing and method of etching |
| CN111446144B (zh) * | 2019-01-17 | 2024-04-19 | 东京毅力科创株式会社 | 静电吸附部的控制方法和等离子体处理装置 |
| KR102827481B1 (ko) | 2019-01-22 | 2025-06-30 | 어플라이드 머티어리얼스, 인코포레이티드 | 펄스 전압 파형을 제어하기 위한 피드백 루프 |
| US11508554B2 (en) | 2019-01-24 | 2022-11-22 | Applied Materials, Inc. | High voltage filter assembly |
| US10784089B2 (en) | 2019-02-01 | 2020-09-22 | Applied Materials, Inc. | Temperature and bias control of edge ring |
| JP7158308B2 (ja) * | 2019-02-14 | 2022-10-21 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| JP7220626B2 (ja) * | 2019-06-18 | 2023-02-10 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| JP7071946B2 (ja) * | 2019-06-21 | 2022-05-19 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US12272520B2 (en) | 2019-07-09 | 2025-04-08 | Tokyo Electron Limited | Process control enabled VDC sensor for plasma process |
| KR102290909B1 (ko) * | 2019-08-30 | 2021-08-19 | 세메스 주식회사 | 기판 처리 장치 및 챔버 클리닝 방법 |
| JP7325294B2 (ja) * | 2019-10-17 | 2023-08-14 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| JP7394601B2 (ja) * | 2019-11-28 | 2023-12-08 | 東京エレクトロン株式会社 | プラズマ処理装置及び測定方法 |
| JP7336395B2 (ja) * | 2020-01-29 | 2023-08-31 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| US11742184B2 (en) * | 2020-02-28 | 2023-08-29 | Tokyo Electron Limited | Plasma processing apparatus and plasma processing method |
| JP7390219B2 (ja) * | 2020-03-11 | 2023-12-01 | 東京エレクトロン株式会社 | エッジリングの保持方法、プラズマ処理装置、及び基板処理システム |
| JP7466432B2 (ja) * | 2020-03-24 | 2024-04-12 | 東京エレクトロン株式会社 | プラズマ処理装置及び消耗量測定方法 |
| TWI767655B (zh) * | 2020-05-01 | 2022-06-11 | 日商東京威力科創股份有限公司 | 蝕刻裝置及蝕刻方法 |
| JP7516198B2 (ja) * | 2020-05-01 | 2024-07-16 | 東京エレクトロン株式会社 | エッチング装置及びエッチング方法 |
| KR102798284B1 (ko) * | 2020-05-01 | 2025-04-18 | 도쿄엘렉트론가부시키가이샤 | 에칭 장치 및 에칭 방법 |
| US11551951B2 (en) | 2020-05-05 | 2023-01-10 | Applied Materials, Inc. | Methods and systems for temperature control for a substrate |
| JP7475193B2 (ja) * | 2020-05-07 | 2024-04-26 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| CN113725059B (zh) * | 2020-05-26 | 2025-04-08 | 中微半导体设备(上海)股份有限公司 | 一种下电极组件，其安装方法及等离子体处理装置 |
| JP7504686B2 (ja) * | 2020-07-15 | 2024-06-24 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| JP7536540B2 (ja) * | 2020-07-16 | 2024-08-20 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| US11462389B2 (en) | 2020-07-31 | 2022-10-04 | Applied Materials, Inc. | Pulsed-voltage hardware assembly for use in a plasma processing system |
| JP7474663B2 (ja) | 2020-09-09 | 2024-04-25 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| JP7458287B2 (ja) * | 2020-10-06 | 2024-03-29 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| KR102603429B1 (ko) * | 2020-10-30 | 2023-11-16 | 세메스 주식회사 | 임피던스 제어 장치 및 이를 구비하는 기판 처리 시스템 |
| JP7782995B2 (ja) * | 2020-11-05 | 2025-12-09 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| US11798790B2 (en) | 2020-11-16 | 2023-10-24 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
| US11901157B2 (en) | 2020-11-16 | 2024-02-13 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
| US11495470B1 (en) | 2021-04-16 | 2022-11-08 | Applied Materials, Inc. | Method of enhancing etching selectivity using a pulsed plasma |
| US11948780B2 (en) | 2021-05-12 | 2024-04-02 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
| US11791138B2 (en) | 2021-05-12 | 2023-10-17 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
| JP7579752B2 (ja) * | 2021-05-27 | 2024-11-08 | 東京エレクトロン株式会社 | クリーニングを制御する方法及びプラズマ処理装置 |
| US11967483B2 (en) | 2021-06-02 | 2024-04-23 | Applied Materials, Inc. | Plasma excitation with ion energy control |
| US12394596B2 (en) | 2021-06-09 | 2025-08-19 | Applied Materials, Inc. | Plasma uniformity control in pulsed DC plasma chamber |
| US11984306B2 (en) | 2021-06-09 | 2024-05-14 | Applied Materials, Inc. | Plasma chamber and chamber component cleaning methods |
| US11810760B2 (en) | 2021-06-16 | 2023-11-07 | Applied Materials, Inc. | Apparatus and method of ion current compensation |
| US11569066B2 (en) | 2021-06-23 | 2023-01-31 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
| US11776788B2 (en) | 2021-06-28 | 2023-10-03 | Applied Materials, Inc. | Pulsed voltage boost for substrate processing |
| US11476090B1 (en) | 2021-08-24 | 2022-10-18 | Applied Materials, Inc. | Voltage pulse time-domain multiplexing |
| US12106938B2 (en) | 2021-09-14 | 2024-10-01 | Applied Materials, Inc. | Distortion current mitigation in a radio frequency plasma processing chamber |
| JP2023043151A (ja) * | 2021-09-15 | 2023-03-28 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| US11694876B2 (en) | 2021-12-08 | 2023-07-04 | Applied Materials, Inc. | Apparatus and method for delivering a plurality of waveform signals during plasma processing |
| KR102560774B1 (ko) * | 2022-01-28 | 2023-07-27 | 삼성전자주식회사 | 기판 처리 장치 및 이를 이용한 기판 처리 방법 |
| TW202405868A (zh) * | 2022-04-22 | 2024-02-01 | 日商東京威力科創股份有限公司 | 電漿處理裝置及電漿處理方法 |
| US11972924B2 (en) | 2022-06-08 | 2024-04-30 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
| US12315732B2 (en) | 2022-06-10 | 2025-05-27 | Applied Materials, Inc. | Method and apparatus for etching a semiconductor substrate in a plasma etch chamber |
| US12272524B2 (en) | 2022-09-19 | 2025-04-08 | Applied Materials, Inc. | Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics |
| US12111341B2 (en) | 2022-10-05 | 2024-10-08 | Applied Materials, Inc. | In-situ electric field detection method and apparatus |
| JP7639953B1 (ja) * | 2024-01-25 | 2025-03-05 | Toto株式会社 | 静電チャック |
| WO2025169734A1 (ja) * | 2024-02-06 | 2025-08-14 | 東京エレクトロン株式会社 | プラズマ処理装置 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1983518B (zh) * | 2004-06-21 | 2011-06-08 | 东京毅力科创株式会社 | 等离子体处理装置和方法 |
| JP4790458B2 (ja) * | 2006-03-22 | 2011-10-12 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP4884047B2 (ja) * | 2006-03-23 | 2012-02-22 | 東京エレクトロン株式会社 | プラズマ処理方法 |
| JP4833890B2 (ja) * | 2007-03-12 | 2011-12-07 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ分布補正方法 |
| JP5281309B2 (ja) * | 2008-03-28 | 2013-09-04 | 東京エレクトロン株式会社 | プラズマエッチング装置及びプラズマエッチング方法及びコンピュータ読み取り可能な記憶媒体 |
| JP5496568B2 (ja) * | 2009-08-04 | 2014-05-21 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| JP5592098B2 (ja) * | 2009-10-27 | 2014-09-17 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| JP5571996B2 (ja) * | 2010-03-31 | 2014-08-13 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| JP2013143432A (ja) * | 2012-01-10 | 2013-07-22 | Tokyo Electron Ltd | プラズマ処理装置 |
| JP6396822B2 (ja) * | 2015-02-16 | 2018-09-26 | 東京エレクトロン株式会社 | プラズマ処理装置のサセプタの電位を制御する方法 |
| US10163610B2 (en) * | 2015-07-13 | 2018-12-25 | Lam Research Corporation | Extreme edge sheath and wafer profile tuning through edge-localized ion trajectory control and plasma operation |
-
2017
- 2017-06-14 JP JP2017116950A patent/JP6826955B2/ja active Active
-
2018
- 2018-06-01 TW TW107118901A patent/TWI740049B/zh active
- 2018-06-08 US US16/003,954 patent/US10431433B2/en active Active
- 2018-06-08 SG SG10201804881QA patent/SG10201804881QA/en unknown
- 2018-06-12 KR KR1020180067114A patent/KR102494181B1/ko active Active
- 2018-06-14 CN CN201810612044.8A patent/CN109087843B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN109087843A (zh) | 2018-12-25 |
| KR20180136390A (ko) | 2018-12-24 |
| JP2019004027A (ja) | 2019-01-10 |
| US10431433B2 (en) | 2019-10-01 |
| US20180366305A1 (en) | 2018-12-20 |
| TWI740049B (zh) | 2021-09-21 |
| CN109087843B (zh) | 2020-06-09 |
| TW201906006A (zh) | 2019-02-01 |
| KR102494181B1 (ko) | 2023-01-31 |
| JP6826955B2 (ja) | 2021-02-10 |
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