CN109087843B - 等离子体处理装置和等离子体处理方法 - Google Patents

等离子体处理装置和等离子体处理方法 Download PDF

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Publication number
CN109087843B
CN109087843B CN201810612044.8A CN201810612044A CN109087843B CN 109087843 B CN109087843 B CN 109087843B CN 201810612044 A CN201810612044 A CN 201810612044A CN 109087843 B CN109087843 B CN 109087843B
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voltage
focus ring
plasma processing
period
power supply
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CN109087843A (zh
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永海幸一
鸟井夏实
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Tokyo Electron Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32091Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32623Mechanical discharge control means
    • H01J37/32642Focus rings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32137Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155Frequency modulation
    • H01J37/32165Plural frequencies
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32174Circuits specially adapted for controlling the RF discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32366Localised processing
    • H01J37/32385Treating the edge of the workpieces
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32532Electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32532Electrodes
    • H01J37/32577Electrical connecting means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32697Electrostatic control
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32697Electrostatic control
    • H01J37/32706Polarising the substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32715Workpiece holder
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32917Plasma diagnostics
    • H01J37/3299Feedback systems
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245Detection characterised by the variable being measured
    • H01J2237/24564Measurements of electric or magnetic variables, e.g. voltage, current, frequency

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
CN201810612044.8A 2017-06-14 2018-06-14 等离子体处理装置和等离子体处理方法 Active CN109087843B (zh)

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JP2017-116950 2017-06-14
JP2017116950A JP6826955B2 (ja) 2017-06-14 2017-06-14 プラズマ処理装置及びプラズマ処理方法

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CN109087843A CN109087843A (zh) 2018-12-25
CN109087843B true CN109087843B (zh) 2020-06-09

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US (1) US10431433B2 (enExample)
JP (1) JP6826955B2 (enExample)
KR (1) KR102494181B1 (enExample)
CN (1) CN109087843B (enExample)
SG (1) SG10201804881QA (enExample)
TW (1) TWI740049B (enExample)

Families Citing this family (74)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107658203B (zh) * 2011-05-05 2020-04-14 岛津研究实验室(欧洲)有限公司 操纵带电粒子的装置
US9873180B2 (en) 2014-10-17 2018-01-23 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
CN107078048B (zh) 2014-10-17 2021-08-13 应用材料公司 使用加成制造工艺的具复合材料特性的cmp衬垫建构
US9776361B2 (en) 2014-10-17 2017-10-03 Applied Materials, Inc. Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles
US10593574B2 (en) 2015-11-06 2020-03-17 Applied Materials, Inc. Techniques for combining CMP process tracking data with 3D printed CMP consumables
US10391605B2 (en) 2016-01-19 2019-08-27 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
US10763081B2 (en) 2017-07-10 2020-09-01 Applied Materials, Inc. Apparatus and methods for manipulating radio frequency power at an edge ring in plasma process device
US11471999B2 (en) 2017-07-26 2022-10-18 Applied Materials, Inc. Integrated abrasive polishing pads and manufacturing methods
US10763150B2 (en) * 2017-09-20 2020-09-01 Applied Materials, Inc. System for coupling a voltage to spatially segmented portions of the wafer with variable voltage
US10510575B2 (en) 2017-09-20 2019-12-17 Applied Materials, Inc. Substrate support with multiple embedded electrodes
JP7037964B2 (ja) * 2018-03-09 2022-03-17 東京エレクトロン株式会社 測定器、及びフォーカスリングを検査するためのシステムの動作方法
JP2019186098A (ja) * 2018-04-12 2019-10-24 東京エレクトロン株式会社 プラズマを生成する方法
JP7061922B2 (ja) * 2018-04-27 2022-05-02 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US10555412B2 (en) 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage
JP6846384B2 (ja) * 2018-06-12 2021-03-24 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理装置の高周波電源を制御する方法
US10847347B2 (en) 2018-08-23 2020-11-24 Applied Materials, Inc. Edge ring assembly for a substrate support in a plasma processing chamber
CN112654655A (zh) 2018-09-04 2021-04-13 应用材料公司 先进抛光垫配方
KR102595900B1 (ko) * 2018-11-13 2023-10-30 삼성전자주식회사 플라즈마 처리 장치
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
US11361947B2 (en) * 2019-01-09 2022-06-14 Tokyo Electron Limited Apparatus for plasma processing and method of etching
CN111446144B (zh) * 2019-01-17 2024-04-19 东京毅力科创株式会社 静电吸附部的控制方法和等离子体处理装置
JP7451540B2 (ja) 2019-01-22 2024-03-18 アプライド マテリアルズ インコーポレイテッド パルス状電圧波形を制御するためのフィードバックループ
US11508554B2 (en) 2019-01-24 2022-11-22 Applied Materials, Inc. High voltage filter assembly
US10784089B2 (en) 2019-02-01 2020-09-22 Applied Materials, Inc. Temperature and bias control of edge ring
JP7158308B2 (ja) * 2019-02-14 2022-10-21 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP7220626B2 (ja) * 2019-06-18 2023-02-10 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP7071946B2 (ja) 2019-06-21 2022-05-19 東京エレクトロン株式会社 プラズマ処理装置
US12272520B2 (en) 2019-07-09 2025-04-08 Tokyo Electron Limited Process control enabled VDC sensor for plasma process
KR102290909B1 (ko) * 2019-08-30 2021-08-19 세메스 주식회사 기판 처리 장치 및 챔버 클리닝 방법
JP7325294B2 (ja) * 2019-10-17 2023-08-14 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP7394601B2 (ja) * 2019-11-28 2023-12-08 東京エレクトロン株式会社 プラズマ処理装置及び測定方法
JP7336395B2 (ja) * 2020-01-29 2023-08-31 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US11742184B2 (en) * 2020-02-28 2023-08-29 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
JP7390219B2 (ja) * 2020-03-11 2023-12-01 東京エレクトロン株式会社 エッジリングの保持方法、プラズマ処理装置、及び基板処理システム
JP7466432B2 (ja) * 2020-03-24 2024-04-12 東京エレクトロン株式会社 プラズマ処理装置及び消耗量測定方法
KR102798284B1 (ko) * 2020-05-01 2025-04-18 도쿄엘렉트론가부시키가이샤 에칭 장치 및 에칭 방법
JP7516198B2 (ja) * 2020-05-01 2024-07-16 東京エレクトロン株式会社 エッチング装置及びエッチング方法
TWI767655B (zh) * 2020-05-01 2022-06-11 日商東京威力科創股份有限公司 蝕刻裝置及蝕刻方法
US11551951B2 (en) 2020-05-05 2023-01-10 Applied Materials, Inc. Methods and systems for temperature control for a substrate
JP7475193B2 (ja) * 2020-05-07 2024-04-26 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
CN113725059B (zh) * 2020-05-26 2025-04-08 中微半导体设备(上海)股份有限公司 一种下电极组件,其安装方法及等离子体处理装置
JP7504686B2 (ja) * 2020-07-15 2024-06-24 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP7536540B2 (ja) * 2020-07-16 2024-08-20 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US11462389B2 (en) 2020-07-31 2022-10-04 Applied Materials, Inc. Pulsed-voltage hardware assembly for use in a plasma processing system
JP7474663B2 (ja) 2020-09-09 2024-04-25 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP7458287B2 (ja) * 2020-10-06 2024-03-29 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
KR102603429B1 (ko) * 2020-10-30 2023-11-16 세메스 주식회사 임피던스 제어 장치 및 이를 구비하는 기판 처리 시스템
JP7782995B2 (ja) * 2020-11-05 2025-12-09 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
JP7579752B2 (ja) * 2021-05-27 2024-11-08 東京エレクトロン株式会社 クリーニングを制御する方法及びプラズマ処理装置
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US12148595B2 (en) 2021-06-09 2024-11-19 Applied Materials, Inc. Plasma uniformity control in pulsed DC plasma chamber
US20220399185A1 (en) 2021-06-09 2022-12-15 Applied Materials, Inc. Plasma chamber and chamber component cleaning methods
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11776788B2 (en) 2021-06-28 2023-10-03 Applied Materials, Inc. Pulsed voltage boost for substrate processing
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US12106938B2 (en) 2021-09-14 2024-10-01 Applied Materials, Inc. Distortion current mitigation in a radio frequency plasma processing chamber
JP2023043151A (ja) * 2021-09-15 2023-03-28 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US11694876B2 (en) 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
KR102560774B1 (ko) * 2022-01-28 2023-07-27 삼성전자주식회사 기판 처리 장치 및 이를 이용한 기판 처리 방법
TW202405868A (zh) * 2022-04-22 2024-02-01 日商東京威力科創股份有限公司 電漿處理裝置及電漿處理方法
US11972924B2 (en) 2022-06-08 2024-04-30 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US12315732B2 (en) 2022-06-10 2025-05-27 Applied Materials, Inc. Method and apparatus for etching a semiconductor substrate in a plasma etch chamber
US12272524B2 (en) 2022-09-19 2025-04-08 Applied Materials, Inc. Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics
US12111341B2 (en) 2022-10-05 2024-10-08 Applied Materials, Inc. In-situ electric field detection method and apparatus
JP7639953B1 (ja) * 2024-01-25 2025-03-05 Toto株式会社 静電チャック
WO2025169734A1 (ja) * 2024-02-06 2025-08-14 東京エレクトロン株式会社 プラズマ処理装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1973363B (zh) * 2004-06-21 2011-09-14 东京毅力科创株式会社 等离子体处理装置和方法
JP4790458B2 (ja) * 2006-03-22 2011-10-12 東京エレクトロン株式会社 プラズマ処理装置
JP4884047B2 (ja) * 2006-03-23 2012-02-22 東京エレクトロン株式会社 プラズマ処理方法
JP4833890B2 (ja) * 2007-03-12 2011-12-07 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ分布補正方法
JP5281309B2 (ja) * 2008-03-28 2013-09-04 東京エレクトロン株式会社 プラズマエッチング装置及びプラズマエッチング方法及びコンピュータ読み取り可能な記憶媒体
JP5496568B2 (ja) * 2009-08-04 2014-05-21 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP5592098B2 (ja) * 2009-10-27 2014-09-17 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP5571996B2 (ja) * 2010-03-31 2014-08-13 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP2013143432A (ja) * 2012-01-10 2013-07-22 Tokyo Electron Ltd プラズマ処理装置
JP6396822B2 (ja) * 2015-02-16 2018-09-26 東京エレクトロン株式会社 プラズマ処理装置のサセプタの電位を制御する方法
US10163610B2 (en) * 2015-07-13 2018-12-25 Lam Research Corporation Extreme edge sheath and wafer profile tuning through edge-localized ion trajectory control and plasma operation

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KR102494181B1 (ko) 2023-01-31
TW201906006A (zh) 2019-02-01
TWI740049B (zh) 2021-09-21
KR20180136390A (ko) 2018-12-24
CN109087843A (zh) 2018-12-25
JP6826955B2 (ja) 2021-02-10
US20180366305A1 (en) 2018-12-20
US10431433B2 (en) 2019-10-01
SG10201804881QA (en) 2019-01-30
JP2019004027A (ja) 2019-01-10

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