TWI740049B - 電漿處理裝置及電漿處理方法 - Google Patents

電漿處理裝置及電漿處理方法 Download PDF

Info

Publication number
TWI740049B
TWI740049B TW107118901A TW107118901A TWI740049B TW I740049 B TWI740049 B TW I740049B TW 107118901 A TW107118901 A TW 107118901A TW 107118901 A TW107118901 A TW 107118901A TW I740049 B TWI740049 B TW I740049B
Authority
TW
Taiwan
Prior art keywords
focus ring
plasma processing
voltage
period
high frequency
Prior art date
Application number
TW107118901A
Other languages
English (en)
Chinese (zh)
Other versions
TW201906006A (zh
Inventor
永海幸一
鳥井夏実
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW201906006A publication Critical patent/TW201906006A/zh
Application granted granted Critical
Publication of TWI740049B publication Critical patent/TWI740049B/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32366—Localised processing
    • H01J37/32385—Treating the edge of the workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24564—Measurements of electric or magnetic variables, e.g. voltage, current, frequency

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
TW107118901A 2017-06-14 2018-06-01 電漿處理裝置及電漿處理方法 TWI740049B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017116950A JP6826955B2 (ja) 2017-06-14 2017-06-14 プラズマ処理装置及びプラズマ処理方法
JP2017-116950 2017-06-14

Publications (2)

Publication Number Publication Date
TW201906006A TW201906006A (zh) 2019-02-01
TWI740049B true TWI740049B (zh) 2021-09-21

Family

ID=64658264

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107118901A TWI740049B (zh) 2017-06-14 2018-06-01 電漿處理裝置及電漿處理方法

Country Status (6)

Country Link
US (1) US10431433B2 (enExample)
JP (1) JP6826955B2 (enExample)
KR (1) KR102494181B1 (enExample)
CN (1) CN109087843B (enExample)
SG (1) SG10201804881QA (enExample)
TW (1) TWI740049B (enExample)

Families Citing this family (78)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012150351A1 (en) * 2011-05-05 2012-11-08 Shimadzu Research Laboratory (Europe) Limited Device for manipulating charged particles
US9873180B2 (en) 2014-10-17 2018-01-23 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
WO2016060712A1 (en) 2014-10-17 2016-04-21 Applied Materials, Inc. Cmp pad construction with composite material properties using additive manufacturing processes
US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
US9776361B2 (en) 2014-10-17 2017-10-03 Applied Materials, Inc. Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles
US10593574B2 (en) 2015-11-06 2020-03-17 Applied Materials, Inc. Techniques for combining CMP process tracking data with 3D printed CMP consumables
US10391605B2 (en) 2016-01-19 2019-08-27 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
US10763081B2 (en) 2017-07-10 2020-09-01 Applied Materials, Inc. Apparatus and methods for manipulating radio frequency power at an edge ring in plasma process device
US11471999B2 (en) 2017-07-26 2022-10-18 Applied Materials, Inc. Integrated abrasive polishing pads and manufacturing methods
US10510575B2 (en) 2017-09-20 2019-12-17 Applied Materials, Inc. Substrate support with multiple embedded electrodes
US10763150B2 (en) * 2017-09-20 2020-09-01 Applied Materials, Inc. System for coupling a voltage to spatially segmented portions of the wafer with variable voltage
JP7037964B2 (ja) * 2018-03-09 2022-03-17 東京エレクトロン株式会社 測定器、及びフォーカスリングを検査するためのシステムの動作方法
JP2019186098A (ja) * 2018-04-12 2019-10-24 東京エレクトロン株式会社 プラズマを生成する方法
JP7061922B2 (ja) * 2018-04-27 2022-05-02 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US10555412B2 (en) 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage
JP6846384B2 (ja) * 2018-06-12 2021-03-24 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理装置の高周波電源を制御する方法
US10847347B2 (en) 2018-08-23 2020-11-24 Applied Materials, Inc. Edge ring assembly for a substrate support in a plasma processing chamber
CN112654655A (zh) 2018-09-04 2021-04-13 应用材料公司 先进抛光垫配方
KR102595900B1 (ko) * 2018-11-13 2023-10-30 삼성전자주식회사 플라즈마 처리 장치
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
US11361947B2 (en) * 2019-01-09 2022-06-14 Tokyo Electron Limited Apparatus for plasma processing and method of etching
CN111446144B (zh) * 2019-01-17 2024-04-19 东京毅力科创株式会社 静电吸附部的控制方法和等离子体处理装置
KR20250100790A (ko) 2019-01-22 2025-07-03 어플라이드 머티어리얼스, 인코포레이티드 펄스 전압 파형을 제어하기 위한 피드백 루프
US11508554B2 (en) 2019-01-24 2022-11-22 Applied Materials, Inc. High voltage filter assembly
US10784089B2 (en) 2019-02-01 2020-09-22 Applied Materials, Inc. Temperature and bias control of edge ring
JP7158308B2 (ja) * 2019-02-14 2022-10-21 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP7220626B2 (ja) * 2019-06-18 2023-02-10 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP7071946B2 (ja) 2019-06-21 2022-05-19 東京エレクトロン株式会社 プラズマ処理装置
US12272520B2 (en) 2019-07-09 2025-04-08 Tokyo Electron Limited Process control enabled VDC sensor for plasma process
KR102290909B1 (ko) * 2019-08-30 2021-08-19 세메스 주식회사 기판 처리 장치 및 챔버 클리닝 방법
JP7325294B2 (ja) * 2019-10-17 2023-08-14 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP7394601B2 (ja) * 2019-11-28 2023-12-08 東京エレクトロン株式会社 プラズマ処理装置及び測定方法
JP7336395B2 (ja) * 2020-01-29 2023-08-31 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US11742184B2 (en) * 2020-02-28 2023-08-29 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
JP7390219B2 (ja) * 2020-03-11 2023-12-01 東京エレクトロン株式会社 エッジリングの保持方法、プラズマ処理装置、及び基板処理システム
JP7466432B2 (ja) * 2020-03-24 2024-04-12 東京エレクトロン株式会社 プラズマ処理装置及び消耗量測定方法
JP7516198B2 (ja) * 2020-05-01 2024-07-16 東京エレクトロン株式会社 エッチング装置及びエッチング方法
TWI903072B (zh) * 2020-05-01 2025-11-01 日商東京威力科創股份有限公司 蝕刻裝置及蝕刻方法
KR102798284B1 (ko) * 2020-05-01 2025-04-18 도쿄엘렉트론가부시키가이샤 에칭 장치 및 에칭 방법
US11551951B2 (en) 2020-05-05 2023-01-10 Applied Materials, Inc. Methods and systems for temperature control for a substrate
JP7475193B2 (ja) * 2020-05-07 2024-04-26 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
CN113725059B (zh) * 2020-05-26 2025-04-08 中微半导体设备(上海)股份有限公司 一种下电极组件，其安装方法及等离子体处理装置
JP7504686B2 (ja) * 2020-07-15 2024-06-24 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP7536540B2 (ja) * 2020-07-16 2024-08-20 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US11848176B2 (en) 2020-07-31 2023-12-19 Applied Materials, Inc. Plasma processing using pulsed-voltage and radio-frequency power
JP7474663B2 (ja) * 2020-09-09 2024-04-25 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP7458287B2 (ja) * 2020-10-06 2024-03-29 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
KR102603429B1 (ko) * 2020-10-30 2023-11-16 세메스 주식회사 임피던스 제어 장치 및 이를 구비하는 기판 처리 시스템
JP7782995B2 (ja) * 2020-11-05 2025-12-09 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
JP7579752B2 (ja) * 2021-05-27 2024-11-08 東京エレクトロン株式会社 クリーニングを制御する方法及びプラズマ処理装置
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US12394596B2 (en) 2021-06-09 2025-08-19 Applied Materials, Inc. Plasma uniformity control in pulsed DC plasma chamber
US20220399186A1 (en) 2021-06-09 2022-12-15 Applied Materials, Inc. Method and apparatus to reduce feature charging in plasma processing chamber
US12525441B2 (en) 2021-06-09 2026-01-13 Applied Materials, Inc. Plasma chamber and chamber component cleaning methods
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11776788B2 (en) 2021-06-28 2023-10-03 Applied Materials, Inc. Pulsed voltage boost for substrate processing
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US12106938B2 (en) 2021-09-14 2024-10-01 Applied Materials, Inc. Distortion current mitigation in a radio frequency plasma processing chamber
JP2023043151A (ja) * 2021-09-15 2023-03-28 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US11694876B2 (en) 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
KR102560774B1 (ko) 2022-01-28 2023-07-27 삼성전자주식회사 기판 처리 장치 및 이를 이용한 기판 처리 방법
TW202405868A (zh) * 2022-04-22 2024-02-01 日商東京威力科創股份有限公司 電漿處理裝置及電漿處理方法
US11972924B2 (en) 2022-06-08 2024-04-30 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US12315732B2 (en) 2022-06-10 2025-05-27 Applied Materials, Inc. Method and apparatus for etching a semiconductor substrate in a plasma etch chamber
US12586768B2 (en) 2022-08-10 2026-03-24 Applied Materials, Inc. Pulsed voltage compensation for plasma processing applications
US12272524B2 (en) 2022-09-19 2025-04-08 Applied Materials, Inc. Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics
US12111341B2 (en) 2022-10-05 2024-10-08 Applied Materials, Inc. In-situ electric field detection method and apparatus
US12683123B2 (en) 2023-12-11 2026-07-14 Applied Materials, Inc. Pulsed voltage waveform biasing of plasma
JP7639953B1 (ja) * 2024-01-25 2025-03-05 Toto株式会社 静電チャック
WO2025169734A1 (ja) * 2024-02-06 2025-08-14 東京エレクトロン株式会社 プラズマ処理装置
WO2026042553A1 (ja) * 2024-08-19 2026-02-26 東京エレクトロン株式会社 プラズマ処理装置及び電源システム

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007258417A (ja) * 2006-03-23 2007-10-04 Tokyo Electron Ltd プラズマ処理方法
US20090026170A1 (en) * 2007-03-12 2009-01-29 Tokyo Electron Limited Plasma processing apparatus and method of plasma distribution correction
TW201130032A (en) * 2009-08-04 2011-09-01 Tokyo Electron Ltd Plasma processing apparatus and plasma processing method
TW201143549A (en) * 2009-10-27 2011-12-01 Tokyo Electron Ltd Plasma processing apparatus and method
TW201344739A (zh) * 2012-01-10 2013-11-01 Tokyo Electron Ltd 電漿處理裝置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1983518B (zh) * 2004-06-21 2011-06-08 东京毅力科创株式会社 等离子体处理装置和方法
JP4790458B2 (ja) * 2006-03-22 2011-10-12 東京エレクトロン株式会社 プラズマ処理装置
JP5281309B2 (ja) * 2008-03-28 2013-09-04 東京エレクトロン株式会社 プラズマエッチング装置及びプラズマエッチング方法及びコンピュータ読み取り可能な記憶媒体
JP5571996B2 (ja) * 2010-03-31 2014-08-13 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP6396822B2 (ja) * 2015-02-16 2018-09-26 東京エレクトロン株式会社 プラズマ処理装置のサセプタの電位を制御する方法
US10163610B2 (en) * 2015-07-13 2018-12-25 Lam Research Corporation Extreme edge sheath and wafer profile tuning through edge-localized ion trajectory control and plasma operation

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007258417A (ja) * 2006-03-23 2007-10-04 Tokyo Electron Ltd プラズマ処理方法
US20090026170A1 (en) * 2007-03-12 2009-01-29 Tokyo Electron Limited Plasma processing apparatus and method of plasma distribution correction
TW201130032A (en) * 2009-08-04 2011-09-01 Tokyo Electron Ltd Plasma processing apparatus and plasma processing method
TW201143549A (en) * 2009-10-27 2011-12-01 Tokyo Electron Ltd Plasma processing apparatus and method
TW201344739A (zh) * 2012-01-10 2013-11-01 Tokyo Electron Ltd 電漿處理裝置

Also Published As

Publication number Publication date
JP6826955B2 (ja) 2021-02-10
CN109087843A (zh) 2018-12-25
US20180366305A1 (en) 2018-12-20
KR102494181B1 (ko) 2023-01-31
US10431433B2 (en) 2019-10-01
SG10201804881QA (en) 2019-01-30
KR20180136390A (ko) 2018-12-24
JP2019004027A (ja) 2019-01-10
TW201906006A (zh) 2019-02-01
CN109087843B (zh) 2020-06-09

Similar Documents

Publication Publication Date Title
KR102494181B1 (ko) 플라즈마 처리 장치 및 플라즈마 처리 방법
KR102931592B1 (ko) 플라즈마 처리 장치 및 에칭 방법
KR102957752B1 (ko) 플라즈마 처리 장치
TWI849020B (zh) 電漿處理裝置及電漿處理方法
CN110416075B (zh) 等离子体处理方法和等离子体处理装置
US11742184B2 (en) Plasma processing apparatus and plasma processing method
KR20250013281A (ko) 플라즈마 처리 장치 및 에칭 방법
KR102857736B1 (ko) 플라즈마 처리 장치 및 플라즈마 처리 방법
TWI917181B (zh) 電漿處理裝置、電漿處理方法及電腦可讀取之記憶媒體
CN110085502B (zh) 控制等离子体处理装置的方法和等离子体处理装置
CN121331739A (zh) 等离子体处理装置及等离子体处理方法
US11581168B2 (en) Plasma processing apparatus and method