SG10201804649VA - Plasma processing apparatus, electrostatic attraction method, and electrostatic attraction program - Google Patents

Plasma processing apparatus, electrostatic attraction method, and electrostatic attraction program

Info

Publication number
SG10201804649VA
SG10201804649VA SG10201804649VA SG10201804649VA SG10201804649VA SG 10201804649V A SG10201804649V A SG 10201804649VA SG 10201804649V A SG10201804649V A SG 10201804649VA SG 10201804649V A SG10201804649V A SG 10201804649VA SG 10201804649V A SG10201804649V A SG 10201804649VA
Authority
SG
Singapore
Prior art keywords
electrostatic attraction
plasma processing
processing apparatus
program
focus ring
Prior art date
Application number
SG10201804649VA
Inventor
Shoichiro Matsuyama
Naoki Tamaru
Yasuharu Sasaki
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of SG10201804649VA publication Critical patent/SG10201804649VA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32201—Generating means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Plasma Technology (AREA)
  • Stored Programmes (AREA)

Abstract

PLASMAPROCESSING APPARATUS, ELECTROSTATIC ATTRACTION METHOD, AND ELECTROSTATIC ATTRACTION PROGRAM Disclosed is a plasma processing apparatus including: a placing table including a focus ring placed thereon and an electrode provided therein so as to face the focus ring; and a voltage application unit that applies, to the electrode, voltages having different polarities in cycles or a voltage having a large absolute value in steps, during a plasma processing period. Figure
SG10201804649VA 2017-06-02 2018-06-01 Plasma processing apparatus, electrostatic attraction method, and electrostatic attraction program SG10201804649VA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017110452A JP6861579B2 (en) 2017-06-02 2017-06-02 Plasma processing equipment, electrostatic adsorption method and electrostatic adsorption program

Publications (1)

Publication Number Publication Date
SG10201804649VA true SG10201804649VA (en) 2019-01-30

Family

ID=64458796

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201804649VA SG10201804649VA (en) 2017-06-02 2018-06-01 Plasma processing apparatus, electrostatic attraction method, and electrostatic attraction program

Country Status (6)

Country Link
US (2) US10879050B2 (en)
JP (1) JP6861579B2 (en)
KR (2) KR102575644B1 (en)
CN (2) CN108987233B (en)
SG (1) SG10201804649VA (en)
TW (2) TW202300698A (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7105666B2 (en) * 2018-09-26 2022-07-25 東京エレクトロン株式会社 Plasma processing equipment
CN111446144B (en) * 2019-01-17 2024-04-19 东京毅力科创株式会社 Control method of electrostatic adsorption part and plasma processing device
JP7346269B2 (en) * 2019-01-17 2023-09-19 東京エレクトロン株式会社 Control method of electrostatic adsorption unit and plasma processing device
JP7333712B2 (en) 2019-06-05 2023-08-25 東京エレクトロン株式会社 Electrostatic chuck, support table and plasma processing equipment
JP7398909B2 (en) 2019-09-12 2023-12-15 東京エレクトロン株式会社 Electrostatic adsorption method and plasma processing device
JP7325294B2 (en) * 2019-10-17 2023-08-14 東京エレクトロン株式会社 Plasma processing apparatus and plasma processing method
JP7365912B2 (en) * 2020-01-10 2023-10-20 東京エレクトロン株式会社 Edge ring and substrate processing equipment
JP7390219B2 (en) 2020-03-11 2023-12-01 東京エレクトロン株式会社 Edge ring holding method, plasma processing equipment, and substrate processing system
JP7499651B2 (en) * 2020-09-02 2024-06-14 東京エレクトロン株式会社 Plasma processing apparatus and method for processing plasma
JP2022111771A (en) * 2021-01-20 2022-08-01 東京エレクトロン株式会社 Plasma processing system and plasma processing method
JP2023039828A (en) 2021-09-09 2023-03-22 東京エレクトロン株式会社 Plasma processing method and plasma processing device

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58114437A (en) * 1981-12-26 1983-07-07 Fujitsu Ltd Electrostatic attracting method
JPH0513555A (en) * 1991-07-01 1993-01-22 Toto Ltd Electrostatic chuck and voltage application method to electrostatic chuck
JPH06244271A (en) * 1993-02-19 1994-09-02 Ulvac Japan Ltd Electrostatic attraction apparatus
JP4330737B2 (en) * 1999-11-24 2009-09-16 株式会社アルバック Vacuum processing method
JP4559595B2 (en) * 2000-07-17 2010-10-06 東京エレクトロン株式会社 Apparatus for placing object to be processed and plasma processing apparatus
US6760213B2 (en) * 2002-03-04 2004-07-06 Hitachi High-Technologies Corporation Electrostatic chuck and method of treating substrate using electrostatic chuck
US20040261946A1 (en) * 2003-04-24 2004-12-30 Tokyo Electron Limited Plasma processing apparatus, focus ring, and susceptor
JP4504061B2 (en) * 2004-03-29 2010-07-14 東京エレクトロン株式会社 Plasma processing method
JP4847909B2 (en) * 2007-03-29 2011-12-28 東京エレクトロン株式会社 Plasma processing method and apparatus
US20090109595A1 (en) * 2007-10-31 2009-04-30 Sokudo Co., Ltd. Method and system for performing electrostatic chuck clamping in track lithography tools
JP2010232476A (en) * 2009-03-27 2010-10-14 Tokyo Electron Ltd Plasma processing apparatus
JP5657262B2 (en) * 2009-03-27 2015-01-21 東京エレクトロン株式会社 Plasma processing equipment
JP5496568B2 (en) * 2009-08-04 2014-05-21 東京エレクトロン株式会社 Plasma processing apparatus and plasma processing method
JP2011040658A (en) * 2009-08-17 2011-02-24 Fujitsu Semiconductor Ltd Workpiece holding apparatus, method of controlling electrostatic chuck, and method of manufacturing semiconductor device
JPWO2013027584A1 (en) * 2011-08-19 2015-03-19 株式会社アルバック Vacuum processing apparatus and vacuum processing method
JP5976377B2 (en) * 2012-04-25 2016-08-23 東京エレクトロン株式会社 Method for controlling adhesion of fine particles to substrate to be processed and processing apparatus
JP2015072825A (en) * 2013-10-03 2015-04-16 株式会社日立ハイテクノロジーズ Plasma processing device and plasma processing method
GB201321463D0 (en) * 2013-12-05 2014-01-22 Oxford Instr Nanotechnology Tools Ltd Electrostatic clamping method and apparatus
JP6346855B2 (en) * 2014-12-25 2018-06-20 東京エレクトロン株式会社 Electrostatic adsorption method and substrate processing apparatus
JP6552346B2 (en) * 2015-09-04 2019-07-31 東京エレクトロン株式会社 Substrate processing equipment
US9922857B1 (en) * 2016-11-03 2018-03-20 Lam Research Corporation Electrostatically clamped edge ring

Also Published As

Publication number Publication date
JP2018206935A (en) 2018-12-27
US20180350565A1 (en) 2018-12-06
US10879050B2 (en) 2020-12-29
CN111668085A (en) 2020-09-15
KR102575644B1 (en) 2023-09-05
JP6861579B2 (en) 2021-04-21
US11764038B2 (en) 2023-09-19
CN108987233A (en) 2018-12-11
CN108987233B (en) 2020-07-03
US20210074522A1 (en) 2021-03-11
TWI781175B (en) 2022-10-21
KR20180132534A (en) 2018-12-12
KR20230129362A (en) 2023-09-08
TW202300698A (en) 2023-01-01
TW201908523A (en) 2019-03-01
CN111668085B (en) 2023-06-27

Similar Documents

Publication Publication Date Title
SG10201804649VA (en) Plasma processing apparatus, electrostatic attraction method, and electrostatic attraction program
SG10201804881QA (en) Plasma processing apparatus and plasma processing method
EP3591742A4 (en) Pre-lithiation apparatus, method for manufacturing negative electrode part using same, and negative electrode part
EP3433865A4 (en) Devices and methods for high voltage and solar applications
SG10201807483QA (en) Dechuck control method and plasma processing apparatus
SG10201806260UA (en) Device and method for electro-fenton process using a carbon electrode and its application for removal of organic pollutants
GB2563330B (en) Power tool apparatus and a method of use of the same
EP3494450A4 (en) An electrical power supply system and process
EP3528334A4 (en) Method and apparatus for battery restoration
EP3542498A4 (en) Message generation method and wearable electronic device for supporting the same
EP3500072A4 (en) Plasma generation device and plasma irradiation method
GB2564944B (en) Power tool apparatus and a method of use of the same
GB2572033A (en) Electrolytic treatment for nuclear decontamination
SG10201803487XA (en) Substrate processing apparatus and method of controlling the same
IN2014MU01274A (en)
SG11201901367RA (en) Apparatus and method for embossing micro- and/or nanostructures
EP3652790A4 (en) Photovoltaic apparatus and method
EP3561082A4 (en) Gas treatment apparatus and operation method using same
EP3807402A4 (en) Method to generate induced oligodendrocyte-lineage cells and treatment using such cells
EP3454451A4 (en) Wearable apparatus and method capable of performing power supply management
PH12017500714A1 (en) A deformable apparatus and method
SG10201805185SA (en) Electrostatic Attraction Method
EP3406015A4 (en) Method and apparatus for correcting for power harmonics
EP3832093A4 (en) Compressed-air-storing power generation apparatus and compressed-air-storing power generation method
EP3700704A4 (en) Electrode re-conditioning tool and method of using the same