SG10201804649VA - Plasma processing apparatus, electrostatic attraction method, and electrostatic attraction program - Google Patents
Plasma processing apparatus, electrostatic attraction method, and electrostatic attraction programInfo
- Publication number
- SG10201804649VA SG10201804649VA SG10201804649VA SG10201804649VA SG10201804649VA SG 10201804649V A SG10201804649V A SG 10201804649VA SG 10201804649V A SG10201804649V A SG 10201804649VA SG 10201804649V A SG10201804649V A SG 10201804649VA SG 10201804649V A SG10201804649V A SG 10201804649VA
- Authority
- SG
- Singapore
- Prior art keywords
- electrostatic attraction
- plasma processing
- processing apparatus
- program
- focus ring
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32201—Generating means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32633—Baffles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
- H01J37/32706—Polarising the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Stored Programmes (AREA)
Abstract
PLASMAPROCESSING APPARATUS, ELECTROSTATIC ATTRACTION METHOD, AND ELECTROSTATIC ATTRACTION PROGRAM Disclosed is a plasma processing apparatus including: a placing table including a focus ring placed thereon and an electrode provided therein so as to face the focus ring; and a voltage application unit that applies, to the electrode, voltages having different polarities in cycles or a voltage having a large absolute value in steps, during a plasma processing period. Figure
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017110452A JP6861579B2 (en) | 2017-06-02 | 2017-06-02 | Plasma processing equipment, electrostatic adsorption method and electrostatic adsorption program |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201804649VA true SG10201804649VA (en) | 2019-01-30 |
Family
ID=64458796
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201804649VA SG10201804649VA (en) | 2017-06-02 | 2018-06-01 | Plasma processing apparatus, electrostatic attraction method, and electrostatic attraction program |
Country Status (6)
Country | Link |
---|---|
US (2) | US10879050B2 (en) |
JP (1) | JP6861579B2 (en) |
KR (2) | KR102575644B1 (en) |
CN (2) | CN111668085B (en) |
SG (1) | SG10201804649VA (en) |
TW (2) | TW202300698A (en) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7105666B2 (en) * | 2018-09-26 | 2022-07-25 | 東京エレクトロン株式会社 | Plasma processing equipment |
CN111446144B (en) * | 2019-01-17 | 2024-04-19 | 东京毅力科创株式会社 | Control method of electrostatic adsorption part and plasma processing device |
JP7346269B2 (en) * | 2019-01-17 | 2023-09-19 | 東京エレクトロン株式会社 | Control method of electrostatic adsorption unit and plasma processing device |
JP7333712B2 (en) | 2019-06-05 | 2023-08-25 | 東京エレクトロン株式会社 | Electrostatic chuck, support table and plasma processing equipment |
JP7398909B2 (en) | 2019-09-12 | 2023-12-15 | 東京エレクトロン株式会社 | Electrostatic adsorption method and plasma processing device |
JP7325294B2 (en) * | 2019-10-17 | 2023-08-14 | 東京エレクトロン株式会社 | Plasma processing apparatus and plasma processing method |
JP7365912B2 (en) * | 2020-01-10 | 2023-10-20 | 東京エレクトロン株式会社 | Edge ring and substrate processing equipment |
JP7390219B2 (en) * | 2020-03-11 | 2023-12-01 | 東京エレクトロン株式会社 | Edge ring holding method, plasma processing equipment, and substrate processing system |
JP7499651B2 (en) * | 2020-09-02 | 2024-06-14 | 東京エレクトロン株式会社 | Plasma processing apparatus and method for processing plasma |
JP7534048B2 (en) * | 2021-01-20 | 2024-08-14 | 東京エレクトロン株式会社 | Plasma processing system and plasma processing method |
JP2023039828A (en) | 2021-09-09 | 2023-03-22 | 東京エレクトロン株式会社 | Plasma processing method and plasma processing device |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58114437A (en) * | 1981-12-26 | 1983-07-07 | Fujitsu Ltd | Electrostatic attracting method |
JPH0513555A (en) * | 1991-07-01 | 1993-01-22 | Toto Ltd | Electrostatic chuck and voltage application method to electrostatic chuck |
JPH06244271A (en) * | 1993-02-19 | 1994-09-02 | Ulvac Japan Ltd | Electrostatic attraction apparatus |
JP4330737B2 (en) * | 1999-11-24 | 2009-09-16 | 株式会社アルバック | Vacuum processing method |
JP4559595B2 (en) * | 2000-07-17 | 2010-10-06 | 東京エレクトロン株式会社 | Apparatus for placing object to be processed and plasma processing apparatus |
US6760213B2 (en) * | 2002-03-04 | 2004-07-06 | Hitachi High-Technologies Corporation | Electrostatic chuck and method of treating substrate using electrostatic chuck |
US20040261946A1 (en) * | 2003-04-24 | 2004-12-30 | Tokyo Electron Limited | Plasma processing apparatus, focus ring, and susceptor |
JP4504061B2 (en) * | 2004-03-29 | 2010-07-14 | 東京エレクトロン株式会社 | Plasma processing method |
JP4847909B2 (en) * | 2007-03-29 | 2011-12-28 | 東京エレクトロン株式会社 | Plasma processing method and apparatus |
US20090109595A1 (en) * | 2007-10-31 | 2009-04-30 | Sokudo Co., Ltd. | Method and system for performing electrostatic chuck clamping in track lithography tools |
JP5657262B2 (en) * | 2009-03-27 | 2015-01-21 | 東京エレクトロン株式会社 | Plasma processing equipment |
JP2010232476A (en) * | 2009-03-27 | 2010-10-14 | Tokyo Electron Ltd | Plasma processing apparatus |
JP5496568B2 (en) * | 2009-08-04 | 2014-05-21 | 東京エレクトロン株式会社 | Plasma processing apparatus and plasma processing method |
JP2011040658A (en) * | 2009-08-17 | 2011-02-24 | Fujitsu Semiconductor Ltd | Workpiece holding apparatus, method of controlling electrostatic chuck, and method of manufacturing semiconductor device |
CN103733318B (en) * | 2011-08-19 | 2016-08-31 | 株式会社爱发科 | Vacuum treatment installation and vacuum processing method |
JP5976377B2 (en) * | 2012-04-25 | 2016-08-23 | 東京エレクトロン株式会社 | Method for controlling adhesion of fine particles to substrate to be processed and processing apparatus |
JP2015072825A (en) * | 2013-10-03 | 2015-04-16 | 株式会社日立ハイテクノロジーズ | Plasma processing device and plasma processing method |
GB201321463D0 (en) * | 2013-12-05 | 2014-01-22 | Oxford Instr Nanotechnology Tools Ltd | Electrostatic clamping method and apparatus |
JP6346855B2 (en) * | 2014-12-25 | 2018-06-20 | 東京エレクトロン株式会社 | Electrostatic adsorption method and substrate processing apparatus |
JP6552346B2 (en) * | 2015-09-04 | 2019-07-31 | 東京エレクトロン株式会社 | Substrate processing equipment |
US9922857B1 (en) * | 2016-11-03 | 2018-03-20 | Lam Research Corporation | Electrostatically clamped edge ring |
-
2017
- 2017-06-02 JP JP2017110452A patent/JP6861579B2/en active Active
-
2018
- 2018-05-28 TW TW111134702A patent/TW202300698A/en unknown
- 2018-05-28 TW TW107118070A patent/TWI781175B/en active
- 2018-05-30 KR KR1020180061733A patent/KR102575644B1/en active IP Right Grant
- 2018-06-01 CN CN202010502543.9A patent/CN111668085B/en active Active
- 2018-06-01 US US15/995,373 patent/US10879050B2/en active Active
- 2018-06-01 CN CN201810558220.4A patent/CN108987233B/en active Active
- 2018-06-01 SG SG10201804649VA patent/SG10201804649VA/en unknown
-
2020
- 2020-11-19 US US16/952,875 patent/US11764038B2/en active Active
-
2023
- 2023-09-01 KR KR1020230116328A patent/KR20230129362A/en active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
JP6861579B2 (en) | 2021-04-21 |
CN108987233A (en) | 2018-12-11 |
US10879050B2 (en) | 2020-12-29 |
TWI781175B (en) | 2022-10-21 |
KR102575644B1 (en) | 2023-09-05 |
US11764038B2 (en) | 2023-09-19 |
US20180350565A1 (en) | 2018-12-06 |
TW202300698A (en) | 2023-01-01 |
CN111668085B (en) | 2023-06-27 |
US20210074522A1 (en) | 2021-03-11 |
TW201908523A (en) | 2019-03-01 |
CN111668085A (en) | 2020-09-15 |
KR20180132534A (en) | 2018-12-12 |
KR20230129362A (en) | 2023-09-08 |
CN108987233B (en) | 2020-07-03 |
JP2018206935A (en) | 2018-12-27 |
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