CN111446144B - Control method of electrostatic adsorption part and plasma processing device - Google Patents

Control method of electrostatic adsorption part and plasma processing device Download PDF

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CN111446144B
CN111446144B CN202010053070.9A CN202010053070A CN111446144B CN 111446144 B CN111446144 B CN 111446144B CN 202010053070 A CN202010053070 A CN 202010053070A CN 111446144 B CN111446144 B CN 111446144B
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electrode
plate
gas
electrode plate
processing apparatus
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CN111446144A (en
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玉虫元
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
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    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
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    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
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    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/335—Cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma

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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Plasma Technology (AREA)

Abstract

The invention provides a control method of an electrostatic adsorption part and a plasma processing device, and provides a technology capable of properly adjusting the temperature of an upper electrode plate. The method for controlling the electrostatic adsorption part is used for adsorbing the electrode plate on the plate which is arranged on the upper part of the plasma processing device and is subjected to temperature control, and comprises the following steps: voltages of polarities different from each other are applied to the first electrode and the second electrode of the electrostatic chuck during at least an idle period of a plasma generation period in which plasma is generated by the plasma processing apparatus and an idle period in which plasma is not generated by the plasma processing apparatus.

Description

Control method of electrostatic adsorption part and plasma processing device
Technical Field
Exemplary embodiments of the present disclosure relate to a control method of an electrostatic chuck and a plasma processing apparatus.
Background
Patent document 1 discloses a structure in which an electrode plate is adsorbed onto an upper electrode of a plasma processing apparatus. The electrostatic adsorption portion is sandwiched between the electrode plate and a plate contacting the electrode plate. The electrostatic adsorption part is made of ceramic and is fixed on the lower surface of the plate through a clamp.
Prior art literature
Patent literature
Patent document 1: japanese patent application laid-open No. 2015-216261
Disclosure of Invention
Problems to be solved by the invention
The present disclosure provides a technique capable of appropriately adjusting the temperature of an upper electrode plate.
Solution for solving the problem
In one exemplary embodiment, a control method for an electrostatic chuck for sucking an electrode plate, which is provided at an upper portion of a plasma processing apparatus and is temperature-controlled, to the plate is provided. The control method includes a step of applying a voltage. In the step of applying the voltage, voltages of different polarities are applied to the first electrode and the second electrode of the electrostatic chuck during at least one of the plasma generation period and the idle period. During plasma generation, plasma is generated by a plasma processing apparatus. During idle, no plasma is generated by the plasma processing apparatus.
ADVANTAGEOUS EFFECTS OF INVENTION
According to one exemplary embodiment, the temperature adjustment of the upper electrode plate can be appropriately performed.
Drawings
Fig. 1 schematically illustrates a plasma processing apparatus according to an exemplary embodiment.
Fig. 2 is a cross-sectional view of an upper electrode according to an exemplary embodiment.
Fig. 3 is a cross-sectional view of an upper electrode according to an exemplary embodiment.
Fig. 4 is a cross-sectional view of an upper electrode according to an exemplary embodiment.
Fig. 5 schematically shows an example of the layout of the first electrode and the second electrode.
Fig. 6 is a partial enlarged view showing an example of the shielding structure.
Fig. 7 is a partial enlarged view showing another example of the shielding structure.
Fig. 8 is a partial enlarged view showing another example of the shielding structure.
Fig. 9 is a partial enlarged view showing another example of the shielding structure.
Fig. 10 is a partial enlarged view showing another example of the shielding structure.
Fig. 11 is a partial enlarged view showing another example of the shielding structure.
Fig. 12 is a diagram schematically illustrating a method according to an exemplary embodiment.
Fig. 13 is a diagram illustrating an example of bipolar adsorption.
Fig. 14 is a diagram illustrating an example of adsorption by the monopolar method.
Fig. 15 is a graph showing an example of the relationship between the voltage applied to the first electrode and the second electrode and the time.
Fig. 16 is a graph showing an example of the relationship between the voltage applied to the first electrode and the second electrode and time.
Fig. 17 is a graph showing an example of the relationship between the voltage applied to the first electrode and the second electrode and the time.
Fig. 18 is a graph showing an example of the relationship between the voltage applied to the first electrode and the second electrode and the time.
Fig. 19 is a graph showing an example of the relationship between the voltages applied to the first electrode and the second electrode and time.
Fig. 20 is a graph showing an example of the relationship between the voltage applied to the first electrode and the second electrode and the time.
Fig. 21 is a graph showing an example of the relationship between the voltage applied to the first electrode and the second electrode and the time.
Detailed Description
Various exemplary embodiments are described below.
In one exemplary embodiment, an upper electrode configuration of a plasma processing apparatus is provided. The upper electrode structure includes an electrode plate, a gas plate, an electrostatic adsorbing portion, and a shielding structure. The electrode plate is formed with a gas discharge hole penetrating in the thickness direction. A gas flow path for supplying the process gas to the gas discharge hole is formed in the gas plate at a position facing the gas discharge hole so as to extend in the thickness direction. The electrostatic adsorption part is sandwiched between the electrode plate and the gas plate, and has a contact surface contacting the lower surface of the gas plate and an adsorption surface adsorbing the upper surface of the electrode plate. The shielding structure is used for shielding free radicals or gas moving from the gas exhaust hole to the position between the electrode plate and the gas plate.
When the electrostatic adsorbing portion is sandwiched between the electrode plate and the gas plate, a gap is formed between the upper end of the gas discharge hole of the electrode plate and the lower end of the gas flow path of the gas plate. Since the electrode plate faces the plasma, there is a possibility that radicals or gases intrude from the gas discharge holes of the electrode plate and go deep into the above-mentioned gap. Such radicals and gases may attack and abrade the electrostatic adsorbing portion.
In this upper electrode structure, radicals or gases moving from the gas discharge holes to between the electrode plate and the gas plate are shielded by the shielding structure. Therefore, the upper electrode structure can improve the consumption of the electrostatic adsorbing portion caused by radicals or gas.
In one exemplary embodiment, the shielding structure may also have a connection member that is sandwiched between the electrode plate and the gas plate and connects an upper end of the gas discharge hole and a lower end of the gas flow path. According to this exemplary embodiment, the radicals or the gas moving from the gas exhaust hole to between the electrode plate and the gas plate can be physically shielded by the connection member.
In one exemplary embodiment, the gas plate may have a first region facing the contact surface of the electrostatic adsorbing portion and a second region facing the gas discharge hole on the lower surface thereof. The connection member may be connected at an upper end thereof to the second region of the lower surface of the gas plate, and at a lower end thereof to the upper surface of the electrode plate. The connection member may define a flow path for communicating the gas discharge hole with the gas flow path. According to this exemplary embodiment, it is possible to physically shield radicals or gas moving from the gas discharge hole to between the electrode plate and the gas plate by the connection member, and to communicate the gas discharge hole with the gas flow path.
In one exemplary embodiment, the connection member may be integrally formed with either one of the gas plate and the electrode plate. According to this exemplary embodiment, the consumption of the electrostatic adsorbing portion by radicals or gas can be improved without increasing the number of components.
In one exemplary embodiment, the connection member may also have an upper member integrally formed with the gas plate, and a lower member in contact with the upper member and integrally formed with the electrode plate. According to this exemplary embodiment, the consumption of the electrostatic adsorbing portion by radicals or gas can be improved without increasing the number of components.
In one exemplary embodiment, the gas panel may also have a passivation layer at a contact portion with the electrode panel. According to this exemplary embodiment, deterioration of the contact portion where the gas plate contacts the electrode plate can be prevented.
In one exemplary embodiment, the connection member may be formed separately from the electrode plate and the gas plate. According to this exemplary embodiment, the consumption of the electrostatic adsorbing portion by radicals or gas can be improved without changing the existing electrode plate and gas plate.
In one exemplary embodiment, the electrostatic adsorbing portion may include a main body portion made of a dielectric having elasticity, and an electrode disposed inside the main body portion. The electrostatic adsorbing portion is disposed between the electrode plate and the gas plate in a state in which the main body portion is compressed, and the compressed main body portion has the same thickness as the connecting member. According to this exemplary embodiment, the electrostatic adsorbing portion can be arranged without interfering with the contact of the electrode plate and the gas plate.
In one exemplary embodiment, the gas plate may have a first region facing the contact surface of the electrostatic adsorbing portion and a second region facing the gas discharge hole on the lower surface thereof. A gap may be formed between the second region and the upper surface of the electrode plate. The shielding structure may have an exhaust device capable of decompressing and an exhaust flow path connected to the exhaust device. The exhaust flow path is formed in the gas plate, and the lower end thereof may be located in the second region. The exhaust device may decompress the space of the gap through the exhaust flow path. According to this exemplary embodiment, the radicals or the gas moving from the gas discharge holes to between the electrode plate and the gas plate can be extracted from the exhaust flow path before reaching the electrostatic adsorbing portion. Therefore, consumption of the electrostatic adsorbing portion by radicals or gas can be improved.
In one exemplary embodiment, the gas plate may have a first region facing the contact surface of the electrostatic adsorbing portion and a second region facing the gas discharge hole on the lower surface thereof. A gap may be formed between the second region and the upper surface of the electrode plate. The shielding structure may have a gas supply source for shielding gas and a supply channel connected to the gas supply source. The supply channel may be formed in the gas plate, and the lower end thereof may be located in the second region, so that the shielding gas is supplied from the gas supply source to the space of the gap. According to this exemplary embodiment, the radical or gas moving from the gas discharge hole to between the electrode plate and the gas plate can be shielded by shielding gas before reaching the electrostatic adsorbing portion. Therefore, consumption of the electrostatic adsorbing portion by radicals or gas can be improved.
In one exemplary embodiment, the composition of the shielding gas may also be the same as the composition of the process gas. According to this exemplary embodiment, the influence of the shielding gas on the process can be reduced.
In one exemplary embodiment, the gas panel may have a flow path formed therein to circulate the refrigerant. According to this exemplary embodiment, the temperature of the gas plate can be directly adjusted, and therefore, heat exchange with the electrode plate can be efficiently performed.
The upper electrode structure according to one exemplary embodiment may further include a cooling member disposed in contact with the upper surface of the gas plate, and a flow path through which the refrigerant flows may be formed in the cooling member. According to this exemplary embodiment, the electrode plate can be cooled without processing the gas plate having the gas flow path.
In one exemplary embodiment, the electrostatic chuck may also have a first chuck and a second chuck. The first suction portion may have a first body portion made of a dielectric material having elasticity, and a first electrode disposed inside the first body portion. The second suction portion may have a second body portion made of a dielectric material having elasticity, and a second electrode disposed inside the second body portion. Voltages of mutually different polarities may be applied to the first electrode and the second electrode. According to this exemplary embodiment, the electrode plate can be adsorbed in a bipolar manner.
In one exemplary embodiment, the electrostatic chuck may also have a first chuck and a second chuck. The first suction portion may have a first body portion made of a dielectric material having elasticity, and a first electrode disposed inside the first body portion. The second suction portion may have a second body portion made of a dielectric material having elasticity, and a second electrode disposed inside the second body portion. The first electrode and the second electrode may be applied with voltages of the same polarity. According to this exemplary embodiment, the electrode plate can be adsorbed in a monopolar manner.
In other exemplary embodiments, a plasma processing apparatus is provided. The plasma processing apparatus has a chamber, a substrate support, and an upper electrode structure. The substrate supporter is configured to support a substrate in the chamber. The upper electrode structure constitutes an upper portion of the chamber. The upper electrode structure has an electrode plate, a gas plate, an electrostatic adsorbing portion, and a shielding structure. The electrode plate is formed with a gas discharge hole penetrating in the thickness direction. A gas flow path for supplying the process gas to the gas discharge hole is formed in the gas plate at a position facing the gas discharge hole so as to extend in the thickness direction. The electrostatic adsorption part is sandwiched between the electrode plate and the gas plate, and has a contact surface contacting the lower surface of the gas plate and an adsorption surface adsorbing the upper surface of the electrode plate. The shielding structure shields radicals or gases moving from the gas exhaust holes to between the electrode plate and the gas plate.
According to this exemplary embodiment, radicals or gas moving from the gas exhaust holes to between the electrode plate and the gas plate are shielded by the shielding structure. Therefore, the plasma processing apparatus can improve the consumption of the electrostatic adsorbing portion caused by radicals or gases.
In other exemplary embodiments, a method of assembling an upper electrode configuration of a plasma processing apparatus is provided. The method includes a step of bonding, a step of positioning, and a step of mounting. In the bonding step, the upper surface of the electrostatic adsorbing portion is bonded to the lower surface of the gas plate. In the bonding step, the lower surface of the gas plate has a first region bonded to the upper surface of the electrostatic adsorbing portion and a second region having a gas flow path formed so as to extend in the thickness direction. The electrostatic adsorbing portion includes a main body portion made of a dielectric material having elasticity, and an electrode disposed inside the main body portion. In the positioning step, the upper surface of the electrode plate and the lower surface of the gas plate are positioned so as to satisfy the following conditions. The condition includes that the connection member thinner than the electrostatic adsorption portion is located between the upper surface of the electrode plate and the second region of the lower surface of the gas plate. The conditions include that the gas discharge hole formed in the electrode plate penetrating in the thickness direction is opposed to the gas flow path. The conditions include that the upper surface of the electrode plate is in contact with the lower surface of the electrostatic adsorbing portion. In the mounting step, a support member for supporting the positioned electrode plate is mounted on the gas plate.
According to this exemplary embodiment, an upper electrode structure that physically shields radicals or gases moving from the gas exhaust hole to between the electrode plate and the gas plate through the connection member can be assembled. In addition, in the case of using the electrostatic adsorbing portion having elasticity, when the electrode plate is adsorbed by the electrostatic adsorbing portion and pressed against the gas plate, there is a possibility that the thickness of the electrostatic adsorbing portion is changed due to the adsorption force. This may cause a variation in the thickness of the electrostatic chuck. Such a variation in thickness affects the accuracy of temperature adjustment of the electrode plate, and further affects the accuracy of plasma processing. In this method, a connection member thinner than the electrostatic adsorption part having elasticity is located between the upper surface of the electrode plate and the second region of the lower surface of the gas plate. When the electrode plate is adsorbed by the electrostatic adsorption portion and pressed against the gas plate, the electrostatic adsorption portion is compressed between the upper surface of the electrode plate and the lower surface of the gas plate. Thus, the upper surface of the electrode plate is abutted against the connecting member, and thus positioning in the height direction (thickness direction) is possible. Therefore, according to this method, the accuracy of the temperature adjustment of the electrode plate can be suppressed from decreasing.
In another exemplary embodiment, a method of controlling an electrostatic chuck for adsorbing an electrode plate to a temperature-controlled plate provided at an upper portion of a plasma processing apparatus is provided. The control method includes a step of applying a voltage. In the step of applying the voltage, voltages of polarities different from each other are applied to the first electrode and the second electrode of the electrostatic chuck during at least one of the plasma generation period and the idle period. During plasma generation, plasma is generated by a plasma processing apparatus. During idle, no plasma is generated by the plasma processing apparatus.
According to another exemplary embodiment, the electrode plate can be adsorbed on the temperature-controlled plate during an idle period in which no plasma is generated. During plasma generation, which generates plasma, the temperature of the electrode plate is raised by heat input from the plasma. Therefore, it is necessary to adsorb the electrode plate to the temperature-controlled plate and adjust the temperature. According to this exemplary embodiment, by performing temperature adjustment even in an idle period in which heat input from the plasma is not performed, temperature adjustment during subsequent plasma generation can be performed efficiently.
The control method according to another exemplary embodiment may alternately include a plasma generation period and an idle period during a process of the plasma processing apparatus. In the step of applying voltages of mutually different polarities, the polarities of voltages applied to the first electrode and the second electrode may be switched for each idle period. According to this exemplary embodiment, the polarity of the electrode is not fixed to one, whereby the situation (migration) in which the charge moves in one direction can be avoided. This can avoid a decrease in the adsorption force.
The control method according to another exemplary embodiment may further include a step of applying a negative voltage to the electrode plate during plasma generation.
The control method according to another exemplary embodiment may further include a step of applying voltages of the same polarity to the first electrode and the second electrode during plasma generation. According to this exemplary embodiment, the electrode plate can be adsorbed in a monopolar manner having an adsorption force stronger than that of a bipolar manner during plasma generation.
The control method according to another exemplary embodiment may further include a step of applying a negative voltage to the electrode plate and applying positive voltages to the first electrode and the second electrode, respectively, during the plasma generation. According to this exemplary embodiment, the electrode plate can be adsorbed when negative voltage is applied to the electrode plate to generate plasma.
In another exemplary embodiment, in the step of applying the voltages of the same polarity, positive voltages may be applied to the first electrode and the second electrode so as to satisfy predetermined conditions. The prescribed condition is that the difference between the positive voltage applied to the first electrode and the second electrode and the negative voltage applied to the electrode plate coincides with the voltage value applied during the idle period. According to this exemplary embodiment, the magnitude of the negative voltage applied to the electrode plate can be reduced by a magnitude of the positive voltage applied to the first electrode and the second electrode, and thus power consumption can be suppressed.
In another exemplary embodiment, the negative voltage applied to the electrode plate may also be applied using a direct current power source connected to the electrode plate. According to this exemplary embodiment, the magnitude of the positive voltage applied to the first electrode and the second electrode can be reduced corresponding to the negative voltage applied to the electrode plates from the direct current power supply.
In another exemplary embodiment, the application of the negative voltage to the electrode plate may also be applied using a high frequency power source connected to the electrode plate. According to this exemplary embodiment, the magnitude of the positive voltage applied to the first electrode and the second electrode can be reduced in correspondence with the self-bias voltage generated at the electrode plate.
In another exemplary embodiment, a plasma processing apparatus is provided. The plasma processing apparatus includes a chamber, a substrate holder, an upper electrode structure, a first power supply, a second power supply, and a control unit. The substrate supporter is configured to support a substrate in the chamber. The upper electrode structure constitutes an upper portion of the chamber. The upper electrode structure includes a plate subjected to temperature control, an electrode plate in contact with a lower surface of the plate, and an electrostatic adsorbing portion having a first electrode and a second electrode. The electrostatic adsorbing portion is sandwiched between the electrode plate and the plate, and has a contact surface that contacts the lower surface of the plate and an adsorbing surface that adsorbs the upper surface of the electrode plate. The control unit applies voltages of polarities different from each other to the first electrode and the second electrode of the electrostatic chuck during at least one of the plasma generation period and the idle period. During plasma generation, plasma is generated by a plasma processing apparatus. During idle, no plasma is generated by the plasma processing apparatus.
According to another exemplary embodiment, the electrode plate can be attracted to the temperature-controlled plate during an idle period in which no plasma is generated. During plasma generation, in which plasma is generated, the electrode plate becomes high temperature by heat input from the plasma. Therefore, in the case of heat input from the plasma, it is necessary to adsorb the electrode plate to the temperature-controlled plate and adjust the temperature. According to this exemplary embodiment, by performing temperature adjustment even in an idle period in which heat input from the plasma is not performed, temperature adjustment during subsequent plasma generation can be performed efficiently.
Various exemplary embodiments are described in detail below with reference to the accompanying drawings. In the drawings, the same or corresponding portions are denoted by the same reference numerals.
[ Outline of plasma processing apparatus ]
Fig. 1 schematically illustrates a plasma processing apparatus according to an exemplary embodiment. The plasma processing apparatus 10 shown in fig. 1 is a capacitively-coupled plasma etching apparatus. The plasma processing apparatus 10 includes a chamber body 12. The chamber body 12 has a substantially cylindrical shape, providing an inner space 12s. The chamber body 12 is formed of, for example, aluminum. The inner wall surface of the chamber body 12 is subjected to a plasma-resistant treatment. For example, the inner wall surface of the chamber body 12 is anodized. The chamber body 12 is electrically grounded.
A passage 12p is formed in a side wall of the chamber body 12. The workpiece W passes through the passage 12p when being carried into the internal space 12s, and when being carried out of the internal space 12 s. The passage 12p can be opened and closed by a gate valve 12 g.
The support portion 13 is provided on the bottom of the chamber body 12. The support portion 13 is formed of an insulating material. The support portion 13 has a substantially cylindrical shape. The support portion 13 extends in the vertical direction from the bottom of the chamber body 12 in the internal space 12 s. The support 13 supports the mounting table 14. The mounting table 14 is provided in the internal space 12 s.
The mounting table 14 (an example of a substrate holder) has a lower electrode 18 and an electrostatic chuck 20. The mounting table 14 may further include an electrode plate 16. The electrode plate 16 is formed of a conductive material called aluminum, for example, and has a substantially disk shape. The lower electrode 18 is disposed on the electrode plate 16. The lower electrode 18 is formed of a conductive material called aluminum, for example, and has a substantially disk shape. The lower electrode 18 is electrically connected to the electrode plate 16.
An electrostatic chuck 20 is disposed on the lower electrode 18. The workpiece W is placed on the upper surface of the electrostatic chuck 20. The electrostatic chuck 20 has a body formed of a dielectric. The membranous electrode is disposed within the body of the electrostatic chuck 20. The electrodes of the electrostatic chuck 20 are connected to a dc power supply 22 via a switch. When a voltage from the dc power supply 22 is applied to the electrode of the electrostatic chuck 20, an electrostatic attraction force is generated between the electrostatic chuck 20 and the workpiece W. The workpiece W is attracted to the electrostatic chuck 20 by the generated electrostatic attraction force, and held by the electrostatic chuck 20.
An edge ring FR is disposed on the mounting table 14 so as to surround the edge of the workpiece W. The edge ring FR is provided to improve the in-plane uniformity of etching. The edge ring FR can be formed of silicon, silicon carbide, or quartz, but is not limited thereto.
A flow path 18f is provided inside the lower electrode 18. The refrigerant is supplied from the cooling unit 26 provided outside the chamber body 12 to the flow path 18f through the pipe 26 a. The refrigerant supplied to the flow path 18f returns to the cooling unit 26 via the pipe 26 b. In the plasma processing apparatus 10, the temperature of the workpiece W placed on the electrostatic chuck 20 is adjusted by heat exchange between the refrigerant and the lower electrode 18.
The plasma processing apparatus 10 is provided with a gas supply line 28. The gas supply line 28 supplies a heat conductive gas, for example, he gas, from a heat conductive gas supply mechanism between the upper surface of the electrostatic chuck 20 and the back surface of the workpiece W.
The plasma processing apparatus 10 further includes an upper electrode 30. The upper electrode 30 is disposed above the mounting table 14. The upper electrode 30 is supported on the upper portion of the chamber body 12 via a member 32. The member 32 is formed of a material having insulating properties. The upper electrode 30 includes an electrode plate 34, an electrostatic chuck 35 (an example of an electrostatic chuck portion), and a gas plate 36. The lower surface of the electrode plate 34 is the lower surface on the side of the internal space 12s, and defines the internal space 12s. The electrode plate 34 can be formed of a low-resistance conductor or semiconductor that generates little joule heat. The electrode plate 34 has a plurality of gas discharge holes 34a. A plurality of gas discharge holes 34a penetrate the electrode plate 34 in the thickness direction of the electrode plate 34.
The gas plate 36 can be formed of a conductive material called aluminum. The electrostatic chuck 35 is disposed between the gas plate 36 and the electrode plate 34. The structure of the electrostatic chuck 35 and the voltage supply system will be described later. The gas plate 36 and the electrode plate 34 are brought into close contact with each other by the suction force of the electrostatic chuck 35.
A cooling plate 37 (an example of a cooling member) is disposed above the gas plate 36. The cooling plate 37 can be formed of a conductive material called aluminum. A flow path 37c is provided in the cooling plate 37. The refrigerant is supplied to the flow path 37c from a cooling unit (not shown) provided outside the chamber body 12. The refrigerant supplied to the flow path 37c returns to the cooling unit. Thereby, the temperature of the cooling plate 37 is adjusted. In the plasma processing apparatus 10, the temperature of the electrode plate 34 is adjusted by heat exchange between the refrigerant and the gas plate 36 and the cooling plate 37.
Inside the cooling plate 37, a plurality of gas introduction passages 37a are provided so as to extend downward. A plurality of gas diffusion chambers 37b are provided between the upper surface of the gas plate 36 and the lower surface of the cooling plate 37 so as to correspond to the plurality of gas introduction passages 37 a. A plurality of gas flow passages 36a are provided in the gas plate 36. The gas flow path 36a is formed to extend in the thickness direction at a position facing the gas discharge hole 34 a. The gas flow passages 36a extend downward from the gas diffusion chamber 37b to communicate with the corresponding gas discharge holes 34 a. The cooling plate 37 is formed with a plurality of gas inlets 37d for introducing the process gas into the plurality of gas diffusion chambers 37b. The gas inlet 37d is connected to a gas supply pipe 38.
The gas supply pipe 38 is connected to the gas supply unit GS. In one embodiment, the gas supply GS includes a gas source stack 40, a valve stack 42, and a flow controller stack 44. The gas source block 40 is connected to the gas supply line 38 via a flow controller block 44 and a valve block 42. The gas source group 40 includes a plurality of gas sources. The plurality of gas sources includes sources of a plurality of gases that constitute the process gas utilized in the process MT. The valve block 42 includes a plurality of open-close valves. The flow controller group 44 includes a plurality of flow controllers. Each of the plurality of flow controllers is a mass flow controller or a pressure controlled flow controller. The multiple gas sources of the gas source stack 40 are connected to the gas supply line 38 via corresponding valves of the valve stack 42 and corresponding flow controllers of the flow controller stack 44.
In the plasma processing apparatus 10, a shield 46 is detachably provided along the inner wall of the chamber body 12. The shield 46 is also provided on the outer periphery of the support portion 13. The shield 46 prevents etch byproducts from adhering to the chamber body 12. The shield 46 is formed by covering a ceramic such as Y 2O3 on an aluminum member.
A partition plate 48 is provided between the support portion 13 and the side wall of the chamber body 12. The separator 48 is formed by covering a ceramic such as Y 2O3 on an aluminum member. The partition plate 48 has a plurality of through holes. An exhaust port 12e is provided below the partition plate 48 and at the bottom of the chamber body 12. The exhaust device 50 is connected to the exhaust port 12e via an exhaust pipe 52. The exhaust device 50 has a vacuum pump such as a pressure control valve and a turbo molecular pump.
The plasma processing apparatus 10 further includes a first high-frequency power supply 62 and a second high-frequency power supply 64. The first high-frequency power supply 62 is a power supply that generates a first high frequency (high-frequency power) for plasma generation. The frequency of the first high frequency is, for example, a frequency in the range of 27MHz to 100 MHz. The first high-frequency power supply 62 is connected to the lower electrode 18 via the matching unit 66 and the electrode plate 16. The matcher 66 has a circuit for matching the output impedance of the first high-frequency power supply 62 with the input impedance of the load side (lower electrode 18 side). The first high-frequency power supply 62 may be connected to the upper electrode 30 via the matching unit 66.
The second high-frequency power source 64 is a power source for generating a second high frequency (other high-frequency power) for attracting ions to the workpiece W. The second high frequency has a lower frequency than the first high frequency. The frequency of the second high frequency is, for example, a frequency in the range of 400kHz to 13.56 MHz. The second high-frequency power supply 64 is connected to the lower electrode 18 via the matching unit 68 and the electrode plate 16. The matching unit 68 has a circuit for matching the output impedance of the second high-frequency power supply 64 with the input impedance of the load side (lower electrode 18 side).
The plasma processing apparatus 10 may further include a dc power supply unit 70. The dc power supply 70 is connected to the upper electrode 30. The dc power supply unit 70 can generate a negative dc voltage and supply the dc voltage to the upper electrode 30.
The plasma processing apparatus 10 may further include a control unit Cnt. The control unit Cnt may be a computer including a processor, a storage unit, an input device, a display device, and the like. The control unit Cnt controls each unit of the plasma processing apparatus 10. The control unit Cnt can perform a command input operation or the like using an input device to allow an operator to manage the plasma processing apparatus 10. The control unit Cnt can visually display the operation state of the plasma processing apparatus 10 by a display device. Further, a control program and process data for controlling various processes performed by the plasma processing apparatus 10 by the processor are stored in the memory of the control unit Cnt. The processor of the control unit Cnt executes a control program and controls each unit of the plasma processing apparatus 10 according to the process data, thereby executing a method described later by the plasma processing apparatus 10.
[ Outline of upper electrode Structure ]
Fig. 2 is a cross-sectional view of an upper electrode according to an exemplary embodiment. As shown in fig. 2, the upper electrode 30 has a structure in which an electrode plate 34, a gas plate 36, and a cooling plate 37 are laminated in this order from below.
An electrostatic chuck 35 is sandwiched between the electrode plate 34 and the gas plate 36. The upper surface of the electrostatic chuck 35 is a contact surface 35c that contacts the lower surface 36c of the gas plate 36, and is fixed to the lower surface 36c of the gas plate 36 by an adhesive or the like. The lower surface of the electrostatic chuck 35 is an adsorption surface 35d for adsorbing the upper surface 34b of the electrode plate 34.
The lower surface 36c of the gas plate 36 may have a first region 36e facing the contact surface 35c of the electrostatic chuck 35 and a second region 36f facing the gas discharge hole 34 a. The second region 36f protrudes downward from the first region 36e, thereby forming a housing portion 36d. The electrostatic chuck 35 is disposed in the accommodating portion 36d.
The electrostatic chuck 35 has a main body portion 35a formed of a dielectric. The body portion 35a has elasticity. An electrode 35b is provided inside the body 35a. The electrode 35b is connected to a dc power supply. Connection to a power supply is described later. When a voltage from a direct current power supply is applied to the electrode 35b of the electrostatic chuck 35, an electrostatic attraction force is generated between the electrostatic chuck 35 and the electrode plate 34. The electrode plate 34 is attracted to the electrostatic chuck 35 by the generated electrostatic attraction force, and is held by the electrostatic chuck 35. The upper electrode 30 shown in fig. 2 is a diagram showing a state in which no voltage is applied to the electrostatic chuck 35. The thickness of the electrostatic chuck 35 before the voltage is applied is thicker than the protruding length of the second region 36f with respect to the first region 36 e.
Fig. 3 is a cross-sectional view of an upper electrode according to an exemplary embodiment. Fig. 3 is a diagram showing a state in which a voltage is applied to the electrostatic chuck 35 in fig. 2. As shown in fig. 3, when a voltage is applied to the electrostatic chuck 35, the electrode plate 34 is attracted to the gas plate 36 by the electrostatic chuck 35. At this time, the electrostatic chuck 35 is sandwiched between the electrode plate 34 and the gas plate 36 and pressed. The main body 35a of the electrostatic chuck 35 has elasticity, and is compressed and pushed into the receiving portion 36 d. Then, the upper surface 34b of the electrode plate 34 abuts against the lower surface 36c of the gas plate 36, and the raising of the electrode plate 34 is stopped. As described above, by the action of the electrostatic chuck 35, the electrostatic chuck 35 is disposed between the electrode plate and the gas plate in a state where the main body portion 35a is compressed. The thickness of the electrostatic chuck 35 after the voltage is applied has the same thickness as the protruding length of the second region 36f with reference to the first region 36 e. Therefore, the upper surface 34b of the electrode plate 34 is in close contact with the lower surface 36c of the gas plate 36.
Fig. 4 is a cross-sectional view of an upper electrode according to an exemplary embodiment. As shown in fig. 4, the first dc power supply 39a and the second dc power supply 39b are connected to the electrostatic chuck 35. Here, two dc power supplies are shown, but the number of dc power supplies is not limited. The number of dc power sources may correspond to the number of electrodes to be controlled by the electrostatic chuck 35. That is, in the example of fig. 4, the electrostatic chuck 35 includes a first electrode 351 and a second electrode 350. Fig. 5 schematically shows an example of the layout of the first electrode and the second electrode. As shown in fig. 4 and 5, the first electrode 351 is disposed in the center of the electrostatic chuck 35, and the second electrode 350 is disposed so as to surround the periphery of the first electrode 351. The first electrode 351 and the second electrode 350 have a shape in which the periphery of the gas discharge hole 34a is cut away. The main body portions of the first electrode 351 and the second electrode 350 may be independent as the first main body portion and the second main body portion, respectively, or may be a single main body portion. Hereinafter, for convenience, the structure of the electrostatic chuck 35 related to the first electrode 351 is referred to as a first suction portion, and the structure of the electrostatic chuck 35 related to the second electrode 350 is referred to as a second suction portion.
Voltages of mutually different polarities may be applied to the first electrode 351 and the second electrode 350. In this case, the electrostatic chuck 35 attracts the electrode plate 34 in a bipolar manner. The same polarity voltage may be applied to the first electrode 351 and the second electrode 350. In this case, the electrostatic chuck 35 attracts the electrode plate 34 in a monopolar manner. The details of the voltage application process will be described later.
[ Details of shielding Structure ]
The upper electrode 30 has a shielding structure. The shielding structure is a structure for shielding radicals or gas moving from the gas discharge holes 34a to between the electrode plate 34 and the gas plate 36. Fig. 6 is a partial enlarged view showing an example of the shielding structure. Fig. 6 is a partial enlarged view of fig. 3. The shielding structure shown in fig. 6 is a protruding portion 36g (an example of a connecting member) of the lower surface 36c of the gas plate 36. That is, in the example of fig. 6, the gas panel 36 has a shielding configuration. The protruding portion 36g is formed so as to surround the lower end 360a of the gas flow path 36 a. Thus, the lower end 360a of the gas flow path 36a and the upper end 340b of the gas discharge hole 34a are connected by the inner flow path of the protruding portion 36 g. The protruding portion 36g is in close contact with the upper surface 34b of the electrode plate 34, and therefore can physically shield radicals or gases moving from the gas discharge holes 34a to between the electrode plate 34 and the gas plate 36.
The shielding structure is not limited to the example shown in fig. 6, and can be implemented in various ways. Fig. 7 is a partial enlarged view showing another example of the shielding structure. As shown in fig. 7, the shielding structure includes a connecting member 360g (an example of a connecting member) interposed between the electrode plate 34 and the gas plate 36 and connecting the upper end of the gas discharge hole 34a to the lower end of the gas flow path 36 a. The connection member 360g is a member corresponding to the protruding portion 36g shown in fig. 6, and is configured independently of the gas plate 36 and the electrode plate 34. The upper end of the connection member 360g is connected to the second region 36f of the lower surface of the gas plate 36, and the lower end is connected to the upper surface 34b of the electrode plate 34. The inside of the connection member 360g defines an internal flow path for communicating the gas discharge hole 34a with the gas flow path 36 a. The connection member 360g is in close contact with the second region 36f of the lower surface of the gas plate 36 and the upper surface 34b of the electrode plate 34, and thus can physically shield radicals or gas moving from the gas discharge holes 34a to between the electrode plate 34 and the gas plate 36.
Fig. 8 is a partial enlarged view showing another example of the shielding structure. As shown in fig. 8, the shielding structure is a protruding portion 34g (an example of a connecting member) on the upper surface of the electrode plate 34, and the protruding portion 34g corresponds to the protruding portion 36g shown in fig. 6. That is, in the example of fig. 8, the electrode plate 34 has a shielding configuration. The protruding portion 34g of the electrode plate 34 is in close contact with the second region 36f of the lower surface of the gas plate 36, and thus can physically shield radicals or gas moving from the gas discharge holes 34a to between the electrode plate 34 and the gas plate 36. The connection member may be formed by a combination of the protruding portion 34g and the protruding portion 36g. That is, the connecting member may be constituted by combining an upper member corresponding to the protruding portion 36g and a lower member corresponding to the protruding portion 34 g.
Fig. 9 is a partial enlarged view showing another example of the shielding structure. As shown in fig. 9, the shielding structure includes a gas source group 41 (an example of a gas supply source), and a supply channel 36h connected to the gas source group 41. The gas source group 41 may be configured in the same manner as the gas source group 40, and may include a plurality of gas supply sources. At least one of the plurality of gas supply sources supplies the shielding gas to the supply flow path 36h. The supply channel 36h is formed in the gas plate 36, and is formed so as to surround the periphery of the gas channel 36a of the gas plate 36, for example. The lower surface 36c of the gas plate 36 corresponding to the lower end portions of the gas flow path 36a and the supply flow path 36h protrudes downward to form a protruding portion 36j. The lower end surface of the protruding portion 36j is a second region 36f of the gas plate 36. The lower end of the supply flow path 36h is located in a second region 36f of the lower surface 36c of the gas plate 36. A gap is formed between the second region 36f and the upper surface 34b of the electrode plate 34, and a space S is provided. The supply flow path 36h supplies shielding gas to the space S, thereby shielding radicals or gas moving between the electrode plate 34 and the gas plate 36. The composition of the shielding gas can be the same as the composition of the process gas supplied by the gas source group 40. An example of a shielding gas is argon gas.
In the shielding structure shown in fig. 9, the protruding portion 36j may not be present. When the electrode plate 34 and the gas plate 36 are in contact with each other, the temperature of the contact portion becomes 500 ℃ or higher at the time of plasma generation. In this case, there is a possibility that the contact portion of the electrode plate 34 and the gas plate 36 may deteriorate. The shielding configuration shown in fig. 9 is such that the electrode plate 34 is non-contacting with the gas plate 36. Therefore, deterioration due to contact can be prevented. Further, generation of particles due to friction and abrasion caused by a difference in thermal expansion between the electrode plate 34 and the gas plate 36 is suppressed.
Fig. 10 is a partial enlarged view showing another example of the shielding structure. As shown in fig. 10, the shielding structure includes an exhaust device 51 and an exhaust passage 36k connected to the exhaust device 51. The evacuation device 51 is a device capable of depressurizing, and is a vacuum pump as an example. The exhaust passage 36k is formed in the gas plate 36, and is formed so as to surround the periphery of the gas passage 36a of the gas plate 36, for example. The lower surface 36c of the gas plate 36 corresponding to the lower end portions of the gas flow path 36a and the exhaust flow path 36k protrudes downward to form a protruding portion 36j. The lower end surface of the protruding portion 36j is a second region 36f of the gas plate 36. The lower end of the exhaust flow path 36k is located in a second region 36f of the lower surface 36c of the gas plate 36. A gap is formed between the second region 36f and the upper surface 34b of the electrode plate 34, and a space S is provided. The exhaust device 51 decompresses the space S through the exhaust flow path 36k, thereby shielding radicals or gases moving between the electrode plate 34 and the gas plate 36.
In the shielding structure shown in fig. 10, the protruding portion 36j may not be present. The shielding structure shown in fig. 10 is the same as that shown in fig. 9, and the electrode plate 34 and the gas plate 36 are non-contact. Therefore, deterioration due to contact can be prevented. Further, generation of particles due to friction and abrasion caused by a difference in thermal expansion between the electrode plate 34 and the gas plate 36 is suppressed.
Fig. 11 is a partial enlarged view showing another example of the shielding structure. A process for preventing deterioration may be performed at the contact interface between the electrode plate 34 and the gas plate 36. As shown in fig. 11, the gas plate 36 may have a passivation layer 36m at least at a contact portion with the electrode plate 34, as an example. This can prevent deterioration due to contact. In the case where the material forming the gas plate 36 is silicon and the material forming the electrode plate 34 is metal, for example, silicide may be formed at the contact portion between the gas plate 36 and the electrode plate 34. The passivation layer 36m can prevent the contact portion from being deteriorated to silicide. Further, by providing the passivation layer 36m in the shielding structure, generation of particles which are difficult to remove by the cleaning process can be suppressed. An example of such particles is aluminum fluoride.
[ Assembling method ]
Fig. 12 is a diagram schematically illustrating a method according to an exemplary embodiment. The method shown in fig. 12 is a method of assembling the upper electrode configuration. The method includes a bonding step (step S10), a positioning step (step S12), and a mounting step (step S14).
First, a bonding step is performed (step S10). In this step, the first region 36e of the lower surface 36c of the gas plate 36 is bonded to the upper surface (contact surface 35 c) of the electrostatic chuck 35. Next, in the positioning step (step S12), the upper surface 34b of the electrode plate 34 and the lower surface 36c of the gas plate 36 are positioned so as to satisfy the following conditions.
The conditions include that a connection member thinner than the electrostatic chuck 35 is located between the upper surface 34b of the electrode plate 34 and the second region 36f of the lower surface 36c of the gas plate 36. The connection member may be, for example, the protrusion 36g of fig. 6, the connection member 360g of fig. 7, or the protrusion 34g of fig. 8. The conditions include that the gas discharge holes 34a formed in the electrode plate 34 are opposed to the gas flow paths 36 a. For example, the gas discharge hole 34a and the gas flow path 36a are arranged coaxially. The conditions include that the upper surface 34b of the electrode plate 34 is in contact with the lower surface (adsorbing surface 35 d) of the electrostatic chuck 35.
Next, in the mounting step (step S14), the member 32 for supporting the electrode plate 34 after positioning is mounted on the gas plate 36. Through the above steps, the upper electrode 30 is completed. When the electrode plate 34 is attracted by the electrostatic chuck 35 and pressed against the gas plate 36, the electrostatic chuck 35 is compressed between the upper surface 34b of the electrode plate 34 and the lower surface 36c of the gas plate 36. Thus, the upper surface 34b of the electrode plate 34 abuts against the connecting member, and thus the positioning in the height direction (thickness direction) can be performed. Therefore, the mounting height accuracy improves, and as a result, the accuracy of the temperature adjustment of the electrode plate 34 can be suppressed from decreasing.
[ Method of controlling electrostatic chuck ]
The electrostatic chuck 35, as shown in fig. 4 and 5, can have a first electrode 351 and a second electrode 350. The first dc power source 39a and the second dc power source 39b apply a voltage of controlled polarity to the electrodes. Fig. 13 is a diagram illustrating an example of bipolar adsorption. As shown in fig. 13, the first dc power supply 39a of the electrostatic chuck 35 applies a positive voltage to the first electrode 351. The first electrode 351 is positively charged. The second dc power supply 39b of the electrostatic chuck 35 applies a negative voltage to the second electrode 350. The second electrode 350 is negatively charged. When the plasma P is not generated, a portion of the electrode plate 34 facing the first electrode 351 is negatively charged, and a portion of the electrode plate 34 facing the second electrode 350 is positively charged. Thus, the electrode plate 34 is held by electrostatic attraction. On the other hand, when the plasma P is generated, a negative self-bias is generated in the electrode plate 34, and the electrode plate 34 is negatively charged. Even when the plasma P is not generated in this way, the bipolar system can generate the adsorption force.
Fig. 14 is a diagram illustrating an example of adsorption by the monopolar method. As shown in fig. 14, the first dc power supply 39a of the electrostatic chuck 35 applies a positive voltage to the first electrode 351. The first electrode 351 is positively charged. The second dc power supply 39b of the electrostatic chuck 35 applies a positive voltage to the second electrode 350. The second electrode 350 is positively charged. As described above, when no electric charges flow, that is, when the plasma P is not generated, the unipolar system cannot generate the adsorption force.
The control unit Cnt can control the first dc power supply 39a and the second dc power supply 39b to switch the adsorption mode.
Fig. 15 is a graph showing an example of the relationship between the voltage applied to the first electrode and the second electrode and the time. The horizontal axis is time and the vertical axis is voltage. Fig. 15 shows a process period PT of the plasma processing apparatus 10. The process period PT alternately includes a plasma generation period PGT and an idle period AT. The plasma generation period PGT is a period during which plasma is generated by the plasma processing apparatus 10. The idle period AT is a period during which plasma is not generated by the plasma processing apparatus 10.
The control unit Cnt applies voltages of different polarities to the first electrode 351 and the second electrode 350 of the electrostatic chuck 35 AT least during the idle period AT. For example, as shown in fig. 15, the control unit Cnt applies a voltage shown by a voltage pattern V1 to the first electrode 351 and applies a voltage shown by a voltage pattern V2 to the second electrode 350. The voltage pattern V1 is a voltage having a positive polarity in either the idle period AT or the plasma generation period PGT. That is, a voltage having a positive polarity is always applied to the first electrode 351. On the other hand, the voltage pattern V2 is a pattern that becomes a voltage having a negative polarity in the case of the idle period AT and a voltage having a positive polarity in the case of the plasma generation period PGT. That is, a voltage having a negative polarity is applied to the second electrode 350 during the idle period AT, and a voltage having a positive polarity is applied to the second electrode 350 during the plasma generation period PGT. The voltage pattern V3 in fig. 15 is a pattern of a voltage applied to the electrode plate 34 by the dc power supply unit 70. The dc power supply unit 70 may apply a voltage continuously or may apply a pulse-like voltage. The dc power supply unit 70 may not be provided.
As described above, the control unit Cnt can hold the electrode plate 34 by the bipolar method during the idle period AT, thereby allowing the electrode plate 34 to be adsorbed to the temperature-controlled gas plate 36. In this way, the temperature of the electrode plate 34 is adjusted even in the idle period AT in which no heat is input from the plasma, and thus the temperature of the electrode plate 34 in the subsequent plasma generation period PGT can be efficiently adjusted.
In addition, the control unit Cnt holds the electrode plate 34 in a monopolar manner by applying positive voltages to the first electrode 351 and the second electrode 350, respectively, during the plasma generation period PGT. This makes it possible to maintain the electrode plate 34 without reducing the adsorption force during plasma generation and to adjust the temperature.
Next, another control method of the control unit Cnt is exemplified. Fig. 16 is a graph showing an example of the relationship between the voltage applied to the first electrode and the second electrode and time. The horizontal axis is time and the vertical axis is voltage. A process period PT of the plasma processing apparatus 10 is shown in fig. 16. The process period PT alternately includes a plasma generation period PGT and an idle period AT.
The voltage pattern V1 shown in fig. 16 is positive in the first idle period AT, negative in the next idle period AT, and positive in the next idle period AT. The voltage pattern V1 is always a positive voltage during plasma generation PGT. On the other hand, the voltage pattern V2 has a negative voltage AT the first idle period, a positive voltage AT the next idle period, and a negative voltage AT the next idle period. The voltage pattern V2 is always a positive voltage during plasma generation PGT. In this way, the polarities of the voltages respectively applied to the first electrode 351 and the second electrode 350 are switched every time the idle period AT. By applying the voltage in this way, the polarity of the electrode is not fixed to one, and thus the movement (migration) of the charge in one direction can be avoided. This can avoid a decrease in the adsorption force.
Fig. 17 is a graph showing an example of the relationship between the voltage applied to the first electrode and the second electrode and the time. The horizontal axis is time and the vertical axis is voltage. Fig. 17 shows a process period PT of the plasma processing apparatus 10. The process period PT alternately includes a plasma generation period PGT and an idle period AT. The control unit Cnt applies a voltage indicated by a voltage pattern V1 to the first electrode 351 and a voltage indicated by a voltage pattern V2 to the second electrode 350. The voltage pattern V1 shown in fig. 17 is the same as the voltage pattern V1 shown in fig. 15 in that the PT voltage pattern V1 is a positive voltage throughout the entire process period, but the positive magnitude of the plasma generation period PGT is different. Specifically, the voltage pattern V1 may be changed so that the effective difference Δv between the positive voltage applied to the first electrode 351 and the voltage applied to the electrode plate 34 during the idle period AT is fixed throughout the entire processing period PT. Similarly, the voltage pattern V2 shown in fig. 17 has the same positive and negative polarities as the voltage pattern V2 shown in fig. 15, but the positive magnitude of PGT during plasma generation is different. Specifically, the voltage pattern V2 is changed so that the effective difference Δv between the positive voltage applied to the first electrode 351 and the voltage applied to the electrode plate 34 is always fixed during the idle period AT. In the figure, the negative self-bias generated in the electrode plate 34 is smaller than the voltage shown by the voltage pattern V3. When the negative self-bias voltage generated in the electrode plate 34 is equal to or higher than the voltage indicated by the voltage pattern V3, the effective difference Δv is calculated based on the negative self-bias voltage, and the voltage patterns V1 and V2 are changed.
Fig. 18 is a graph showing an example of the relationship between the voltage applied to the first electrode and the second electrode and the time. The horizontal axis is time and the vertical axis is voltage. Fig. 18 shows a process period PT of the plasma processing apparatus 10. The process period PT alternately includes a plasma generation period PGT and an idle period AT. The plasma generation period PGT is either one of a substrate processing period BT in which a substrate is processed by the generated plasma and a cleaning period in which the substrate is cleaned by the generated plasma. During the substrate processing, BT, etching processing, film forming processing, and the like are performed on the substrate using plasma based on the process data. Thus, the substrate is processed according to the design. During cleaning, the interior of the chamber body 12 is dry cleaned. Specifically, the plasma is used to remove particles present in the internal space 12s of the chamber body 12. The particles may be reaction products generated by BT during substrate processing, or gas molecules used by BT during substrate processing, or the like. The particles are not limited to those generated by BT during substrate processing. For example, the particles may be particles remaining in the internal space 12s of the chamber body 12 before the start of the substrate processing during BT at the time of starting the apparatus. That is, it is possible to start from either the substrate processing period BT or the cleaning period.
The cleaning period includes a first cleaning period CT in which plasma is generated in a state in which the substrate is not accommodated in the internal space 12s of the chamber body 12, and a second cleaning period DT in which plasma is generated in a state in which the substrate is accommodated in the internal space 12s of the chamber body 12.
In the example of fig. 18, the processing period PT includes, in order, an idle period AT, a substrate processing period BT, an idle period AT, a first cleaning period CT, and an idle period AT. The control unit Cnt applies a voltage indicated by a voltage pattern V1 to the first electrode 351 and a voltage indicated by a voltage pattern V2 to the second electrode 350. The voltage patterns V1, V2, and V3 shown in fig. 18 are the same as those of the voltage patterns V1, V2, and V3 shown in fig. 17, and are the same as those of the idle period AT, the substrate processing period BT, and the idle period AT. In the example shown in fig. 18, a voltage having a polarity different from that of the voltage applied to the first electrode 351 during the substrate processing period BT is applied to the first electrode 351 during the first cleaning period CT (voltage pattern V1). In the case where the BT applies a positive voltage to the first electrode 351 during the substrate processing, the CT applies a negative voltage to the first electrode 351 during the first cleaning period. When the BT applies a negative voltage to the first electrode 351 during the substrate processing, a positive voltage is applied to the first electrode 351 during the first cleaning period CT. By applying the voltage in this way, the polarity of the electrode is not fixed to one, and thus charge movement (migration) in one direction can be avoided. This can avoid a decrease in the adsorption force.
In the first cleaning period CT, a voltage having a polarity different from that of the voltage applied to the second electrode 350 during the substrate processing period BT may be applied to the second electrode 350 (voltage pattern V2). In the case where the BT applies a positive voltage to the second electrode 350 during the substrate processing, a negative voltage is applied to the second electrode 350 during the first cleaning period CT. Alternatively, in the first cleaning period CT, a voltage having a polarity different from the polarity of the voltage applied to the second electrode 350 in the idle period AT immediately before the first cleaning period CT may be applied to the second electrode 350. In these cases, migration can be avoided. The voltage pattern V3 becomes a fixed value of the voltage 0V from the end of the substrate processing period BT.
In the first cleaning period CT, a voltage may be applied from the dc power supply unit 70 to the electrode plate 34. Fig. 19 is a graph showing an example of the relationship between the voltages applied to the first electrode and the second electrode and time. The voltage patterns V1, V2, V3 shown in fig. 19 are different from the voltage patterns V1, V2, V3 shown in fig. 18, and are the same as each other in the first cleaning period CT. As shown in fig. 19, in the first cleaning period CT, a negative voltage is applied from the dc power supply unit 70 to the electrode plate 34. In this case, the voltage pattern V1 is changed so that the effective difference Δv between the positive voltage applied to the first electrode 351 and the voltage applied to the electrode plate 34 during the idle period AT is fixed throughout the entire processing period PT. Similarly, the voltage pattern V2 is changed so that the effective difference Δv between the positive voltage applied to the second electrode 350 and the voltage applied to the electrode plate 34 during the idle period AT is fixed throughout the entire processing period PT.
Fig. 20 is a graph showing an example of the relationship between the voltage applied to the first electrode and the second electrode and the time. The horizontal axis is time and the vertical axis is voltage. Fig. 20 shows a process period PT of the plasma processing apparatus 10. The process period PT alternately includes a plasma generation period PGT and an idle period AT. In the example of fig. 20, the process period PT includes, in order, an idle period AT, a substrate process period BT, an idle period AT, a second cleaning period DT, an idle period AT, a first cleaning period CT, and an idle period AT. Fig. 20 is an example in which the second cleaning period DT is inserted in the idle period AT between the substrate processing period BT and the first cleaning period CT in the graph shown in fig. 18. Therefore, only the points different from the graph shown in fig. 18 will be described.
During the second cleaning period DT, plasma is generated in a state where the substrate is already accommodated in the internal space 12s of the chamber body 12. During the second cleaning period DT, the substrate is disposed on the electrostatic chuck 20.
In the example of fig. 20, during the second cleaning period DT, a negative voltage is applied from the dc power supply unit 70 to the electrode plate 34. In this case, the voltage pattern V1 is changed so that the effective difference Δv between the positive voltage applied to the first electrode 351 and the voltage applied to the electrode plate 34 during the idle period AT is fixed throughout the entire processing period PT. Similarly, the voltage pattern V2 is changed so that the effective difference Δv between the positive voltage applied to the second electrode 350 and the voltage applied to the electrode plate 34 during the idle period AT is fixed throughout the entire processing period PT.
Fig. 21 is a graph showing an example of the relationship between the voltage applied to the first electrode and the second electrode and the time. The horizontal axis is time and the vertical axis is voltage. Fig. 21 shows a process period PT of the plasma processing apparatus 10. The process period PT alternately includes a plasma generation period PGT and an idle period AT. In the example of fig. 21, the process period PT includes, in order, an idle period AT, a substrate process period BT, an idle period AT, a second cleaning period DT, an idle period AT, a first cleaning period CT, and an idle period AT. Fig. 21 is an example in which, in the graph shown in fig. 19, the idle period AT between the substrate processing period BT and the first cleaning period CT is inserted into the second cleaning period DT. The second cleaning period DT is the same as that described with fig. 20.
While various exemplary embodiments have been described above, various omissions, substitutions, and changes may be made without limitation to the exemplary embodiments described above. Further, elements of different embodiments may be combined to form other embodiments.
For example, the plasma processing apparatus 10 is a capacitive coupling type plasma processing apparatus, but the plasma processing apparatus according to other embodiments may be a different type of plasma processing apparatus. Such a plasma processing apparatus can be any type of plasma processing apparatus. Examples of such a plasma processing apparatus include an inductively coupled plasma processing apparatus and a plasma processing apparatus that generates plasma using a surface wave called a microwave.
In the plasma processing apparatus 10, the high-frequency power supply of 2 systems is connected to the lower electrode 18, and the dc power supply is connected to the upper electrode 30. For example, the plasma processing apparatus 10 may not include the upper electrode 30. For example, the plasma processing apparatus 10 may be connected to a high-frequency power supply through the lower electrode 18 and the upper electrode 30.
From the foregoing, it will be appreciated that various embodiments of the disclosure have been described herein for purposes of illustration, and that various modifications may be made without deviating from the scope and spirit of the disclosure. Accordingly, the various embodiments disclosed in the specification are not limiting, the true scope and spirit being indicated by the following claims.

Claims (23)

1. A method for controlling an electrostatic chuck for adsorbing an electrode plate to a temperature-controlled plate provided on an upper part of a plasma processing apparatus, the method comprising:
Voltages of polarities different from each other are applied to the first electrode and the second electrode of the electrostatic chuck during at least the idle period of the plasma generation period in which plasma is generated by the plasma processing apparatus and the idle period in which plasma is not generated by the plasma processing apparatus.
2. The method for controlling an electrostatic chuck according to claim 1, wherein,
The processing period of the plasma processing apparatus alternately includes the plasma generation period and the idle period,
In the step of applying voltages of mutually different polarities, each time the idle period is performed, the polarities of voltages applied to the first electrode and the second electrode are switched.
3. The method of controlling an electrostatic chuck according to claim 1 or 2, further comprising the steps of:
during the plasma generation, a negative voltage is applied to the electrode plate.
4. The method of controlling an electrostatic chuck according to claim 1 or 2, further comprising the steps of:
During the plasma generation, voltages of the same polarity are applied to the first electrode and the second electrode.
5. The method of controlling an electrostatic chuck according to claim 1 or 2, further comprising the steps of:
during the plasma generation, a negative voltage is applied to the electrode plate, and positive voltages are applied to the first electrode and the second electrode, respectively.
6. The method for controlling an electrostatic chuck according to claim 4,
In the step of applying voltages of the same polarity, positive voltages are applied to the first electrode and the second electrode so that a difference between positive voltages applied to the first electrode and the second electrode and negative voltages applied to the electrode plates matches a voltage value applied during the idle period.
7. The method for controlling an electrostatic chuck according to claim 6, wherein,
The negative voltage applied to the electrode plate is applied using a direct current power source connected to the electrode plate.
8. The method for controlling an electrostatic chuck according to claim 6, wherein,
The negative voltage applied to the electrode plate is applied using a high frequency power source connected to the electrode plate.
9. The method for controlling an electrostatic chuck according to claim 1, wherein,
The plasma generation period is either one of a substrate processing period during which a substrate is processed by the generated plasma and a cleaning period during which particles are removed by the generated plasma,
The control method of the electrostatic adsorption part comprises the following steps: during the cleaning, a voltage of a polarity different from a polarity of a voltage applied to the first electrode during the substrate processing is applied to the first electrode.
10. The method of controlling an electrostatic chuck according to claim 9, further comprising the steps of:
during the cleaning, a voltage of a polarity different from a polarity of a voltage applied to the second electrode during the substrate processing is applied to the second electrode.
11. The method of controlling an electrostatic chuck according to claim 9, further comprising the steps of:
During the cleaning, a voltage of a polarity different from that of the voltage applied to the second electrode during the idle period is applied to the second electrode.
12. A plasma processing apparatus includes:
A chamber;
A substrate supporter configured to support a substrate in the chamber;
an upper electrode structure that constitutes an upper portion of the chamber, and that includes a temperature-controlled plate, an electrode plate that is in contact with a lower surface of the plate, and an electrostatic adsorbing portion that is sandwiched between the electrode plate and the plate, the electrostatic adsorbing portion having a contact surface that is in contact with the lower surface of the plate, an adsorbing surface that adsorbs an upper surface of the electrode plate, a first electrode, and a second electrode;
a first power supply that applies a voltage to the first electrode;
A second power supply that applies a voltage to the second electrode; and
A control unit that controls voltages applied by the first power source and the second power source,
Wherein the control unit applies voltages of polarities different from each other to the first electrode and the second electrode of the electrostatic chuck during at least the idle period of a plasma generation period during which plasma is generated and an idle period during which plasma is not generated.
13. A plasma processing apparatus according to claim 12, wherein,
The electrode plate is formed with a gas discharge hole penetrating in the thickness direction,
A gas flow path for supplying a process gas to the gas discharge hole is formed in the plate at a position facing the gas discharge hole so as to extend in the thickness direction,
The plasma processing apparatus further includes a shielding structure for shielding radicals or gases moving from the gas exhaust hole to between the electrode plate and the plate.
14. A plasma processing apparatus according to claim 13, wherein,
The shielding structure has a connecting member that is sandwiched between the electrode plate and the plate and connects an upper end of the gas discharge hole with a lower end of the gas flow path.
15. A plasma processing apparatus according to claim 14, wherein,
A first region facing the contact surface of the electrostatic adsorbing portion and a second region facing the gas discharge hole are provided on the lower surface of the plate,
The upper end of the connection member is connected to the second region of the lower surface of the plate, the lower end of the connection member is connected to the upper surface of the electrode plate, and a flow path for communicating the gas discharge hole with the gas flow path is defined in the connection member.
16. A plasma processing apparatus according to claim 15, wherein,
The connection member is integrally formed with either one of the plate and the electrode plate.
17. A plasma processing apparatus according to claim 15, wherein,
The connection member has an upper member integrally formed with the plate, and a lower member contacting the upper member and integrally formed with the electrode plate.
18. A plasma processing apparatus according to claim 16 or 17, wherein,
The plate has a passivation layer at a contact portion with the electrode plate.
19. A plasma processing apparatus according to claim 14 or 15, wherein,
The connection member is formed separately from the electrode plate and the plate.
20. The plasma processing apparatus according to any one of claims 14 to 17, wherein,
The electrostatic adsorbing portion has a main body portion made of a dielectric material having elasticity, and an electrode disposed inside the main body portion, the electrostatic adsorbing portion being disposed between the electrode plate and the plate in a compressed state,
The compressed body portion has a thickness identical to a thickness of the connecting member.
21. A plasma processing apparatus according to claim 13, wherein,
A first region facing the contact surface of the electrostatic adsorbing portion and a second region facing the gas discharge hole are provided on the lower surface of the plate,
A gap is formed between the second region and the upper surface of the electrode plate,
The shielding structure has an exhaust device capable of decompressing and an exhaust flow path connected with the exhaust device,
The exhaust flow path is formed in the plate, the lower end of the exhaust flow path is located in the second region,
The exhaust device decompresses the space of the gap via the exhaust flow path.
22. A plasma processing apparatus according to claim 13, wherein,
A first region facing the contact surface of the electrostatic adsorbing portion and a second region facing the gas discharge hole are provided on the lower surface of the plate,
A gap is formed between the second region and the upper surface of the electrode plate,
The shielding structure has a gas supply source for shielding gas and a supply flow path connected to the gas supply source,
The supply flow path is formed in the plate, a lower end of the supply flow path is located in the second region, and the supply flow path is used for supplying the shielding gas from the gas supply source to the space of the gap.
23. The plasma processing apparatus according to claim 22, wherein a composition of the shielding gas is the same as a composition of the processing gas.
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