JP2021125656A - Substrate-processing device and control method thereof - Google Patents

Abstract

To restore a wear-out part in a chamber while keeping an airtight condition in the chamber of a substrate-processing device.SOLUTION: In a substrate processing device 1, when a process of restoring an electrode plate 36 is started, a control part transports a target substrate TW into a reaction chamber 10 and puts the target substrate on a work-holder table. Subsequently, the control part controls a switch 105 to turn off the connection of a high-frequency power source 48 and a DC power source 100 with a second table (outer peripheral-side electrode plate 16b), and supplies an argon gas from a gas supply part 66 to introduce the argon gas into the chamber from a plurality of gas holes 37. Then, the control part supplies a first table 16a with a high-frequency power from the high-frequency power source and a pulse DC voltage from the DC power source to make plasma of the argon gas. By applying the pulse DC voltage to the first table, the target substrate TW is sputtered by ions of the argon plasma. Thus, silicon is scattered from the target substrate TW, and deposited on the electrode plate 36, whereby the electrode plate is restored.SELECTED DRAWING: Figure 5

Description

The present disclosure relates to a substrate processing apparatus and a control method of the substrate processing apparatus.

A technique has been proposed that can restore consumable parts in the chamber of a substrate processing apparatus. For example, Patent Document 1 is an upper electrode including an inner member and an outer member formed in an annular shape so as to surround the inner member, and only the inner member can be replaced when it is consumed by plasma treatment. To propose.

Japanese Unexamined Patent Publication No. 2003-332314 Japanese Unexamined Patent Publication No. 2011-54933

The present disclosure provides a technique capable of repairing consumable parts in a chamber while maintaining a sealed state in the chamber of a substrate processing apparatus.

According to one aspect of the present disclosure, a reaction chamber and a mounting table provided in the reaction chamber, wherein the above-mentioned table is a first table and the first table around the first table. A mounting table having a second table electrically separated from the table, a high-frequency power supply connected to the first table and applying high-voltage power, and connected to the first table. It has a DC power supply to which a DC voltage is applied, a counter electrode facing the above-mentioned stand, a gas supply unit for supplying gas into the reaction chamber through a gas hole provided in the counter electrode, and a control unit. The control unit provides a target substrate on the first table, supplies gas from the gas supply unit through the gas hole into the reaction chamber, and supplies high-frequency power from the high-frequency power source. The step of supplying to the first table and the step of applying a pulsed DC voltage from the DC power supply to the first table, and adhering sputter particles from the target substrate onto the counter electrode to attach the counter electrode. A substrate processing apparatus is provided that is configured to control the process of regeneration.

According to one aspect, consumable parts in the chamber can be repaired while maintaining the sealed state in the chamber of the substrate processing apparatus.

The cross-sectional schematic diagram which shows an example of the substrate processing apparatus which concerns on embodiment. The figure for demonstrating the operation of the power-source system at the time of the substrate processing which concerns on embodiment. The figure which shows an example of the consumption of the consumable part of the substrate processing apparatus which concerns on embodiment. The flowchart which shows an example of the substrate processing which concerns on embodiment. The figure for demonstrating the operation of the power-source system at the time of repairing the consumable part which concerns on embodiment. The figure which shows an example of repairing the consumable part of the substrate processing apparatus which concerns on embodiment. The flowchart which shows an example of the repair process which concerns on embodiment. The figure which shows an example of the structure of the substrate processing apparatus which concerns on modification 1 of embodiment, and the operation of a power-source system. The figure which shows an example of repairing the target board and consumable parts which concerns on modification 2 of embodiment. The figure which shows an example of the structure of the substrate processing apparatus which concerns on modification 3 of embodiment, and the operation of a power-source system. The figure which shows an example of repairing the consumable part of the substrate processing apparatus which concerns on modification 3 of embodiment. The flowchart which shows an example of the repair process which concerns on modification 3 of embodiment.

Hereinafter, embodiments for carrying out the present disclosure will be described with reference to the drawings. In each drawing, the same components may be designated by the same reference numerals and duplicate description may be omitted.

[Board processing device]
FIG. 1 is a diagram showing an example of the substrate processing device 1 according to the embodiment. The substrate processing apparatus 1 according to the embodiment is a capacitive coupling type parallel plate plasma processing apparatus, for example, a cylindrical reaction chamber 10 (hereinafter, also referred to as “chamber”) made of aluminum whose surface has been anodized. Have. The chamber 10 is grounded.

At the bottom of the chamber 10, a mounting table ST is arranged via an insulating plate 12 made of ceramics or the like. The mounting table ST has an electrostatic chuck 20 and an electrode plate 16. The mounting table ST further has a support plate 14. However, the mounting table ST does not have to have the support plate 14. The support plate 14 is arranged on the insulating plate 12, and the electrode plate 16 is provided on the support plate 14. The support plate 14 and the electrode plate 16 are formed of, for example, aluminum. The electrode plate 16 functions as a lower electrode. The support plate 14 is electrically separated from a columnar central support plate 14a and an annular outer peripheral support plate 14b arranged on the outer periphery of the central support plate 14a. The electrode plate 16 is electrically separated from a columnar central electrode plate 16a and an annular outer peripheral electrode plate 16b arranged on the outer periphery of the central electrode plate 16a.

The diameters of the central support plate 14a and the central electrode plate 16a are equal. The inner and outer diameters of the outer peripheral side support plate 14b and the outer peripheral side electrode plate 16b are the same. The central electrode plate 16a is provided on the central support plate 14a, and the electrostatic chuck 20 is provided on the central electrode plate 16a. The substrate W is placed on the electrostatic chuck 20. An example of the substrate W is a wafer. The outer peripheral side electrode plate 16b is provided on the outer peripheral side support plate 14b, and an edge ring 24 (also referred to as a focus ring) made of, for example, silicon is placed on the outer peripheral side electrode plate 16b. As a result, the edge ring 24 is arranged around the substrate W.

The electrostatic chuck 20 has a structure in which an electrode 20a made of a conductive film is sandwiched between insulating layers 20b, and a power supply 22 is connected to the electrode 20a. Then, the substrate W is attracted and held by the electrostatic chuck 20 by the Coulomb force generated by the DC voltage from the power supply 22. A cylindrical inner wall member 26 made of, for example, quartz is arranged on the outer periphery of the mounting table ST. An insulator ring 25 is arranged on the outer periphery of the edge ring 24.

A flow path may be provided inside the support plate 14. The flow path circulates and supplies a heat transfer medium having a predetermined temperature from the chiller unit, and the temperature of the substrate W is controlled by the temperature of the heat transfer medium. Further, a heat transfer gas, for example, He gas, is supplied between the electrostatic chuck 20 and the back surface of the substrate W via the gas supply line 32. The heat transfer gas may be supplied between the mounting area of the edge ring 24 on the mounting table ST and the back surface of the edge ring 24.

The central electrode plate 16a is an example of the first table, and the outer peripheral electrode plate 16b is a second table electrically separated from the first table around the first table. This is an example. The central electrode plate 16a and the central support plate 14a may be used as an example of the first table, and the outer peripheral electrode plate 16b and the outer peripheral support plate 14b may be used as an example of the second table. Hereinafter, the central electrode plate 16a will be referred to as a “first stand”, and the outer peripheral electrode plate 16b will be referred to as a “second stand”.

An upper electrode 34 is provided above the mounting table ST. A plasma processing space is formed between the upper electrode 34 and the mounting table ST. The upper electrode 34 forms a surface facing the substrate W on the mounting table ST and in contact with the plasma processing space, that is, a facing surface. The upper electrode 34 is a counter electrode of the mounting table ST.

The upper electrode 34 is supported on the upper part of the chamber 10 via an insulating shielding member 42. The upper electrode 34 detachably supports an electrode plate 36 which forms a facing surface with the mounting table ST and has a plurality of gas holes 37 (gas holes) and the electrode plate 36, and is made of a conductive material, for example, the surface of which is an anode. It has an electrode support 38 made of anodized aluminum. The electrode plate 36 is preferably made of silicon or SiC. A gas diffusion chamber 40 is provided inside the electrode support 38, and a plurality of gas passage holes 41 communicating with the gas holes 37 extend downward from the gas diffusion chamber 40.

The electrode support 38 is formed with a gas introduction port 62 for guiding the process gas to the gas diffusion chamber 40, a gas supply pipe 64 is connected to the gas introduction port 62, and a gas supply unit is connected to the gas supply pipe 64. 66 is connected. The gas supply pipe 64 is provided with a mass flow controller (MFC) 68 and an on-off valve 70 in this order from the upstream side. The process gas is output from the gas supply unit 66, reaches the gas diffusion chamber 40 through the gas supply pipe 64, and is introduced into the plasma processing space like a shower from the gas hole 37 through the gas flow hole 41. In this way, the upper electrode 34 functions as a shower head for supplying the process gas. The gas supply unit 66 is an example of a gas supply unit that supplies gas from a plurality of gas holes provided in the counter electrodes of the mounting table ST.

A first radio frequency (RF) power supply 48 is connected to the first stand via a power supply line 47 and a matching unit 46. The first high-frequency power supply 48 applies high-frequency power for plasma excitation of the first frequency (hereinafter, also referred to as “first high-frequency power”) to the first unit. Further, the first high frequency power supply 48 may apply the first high frequency power to the second stand via the power supply line 47 and the switch 105. As a result, plasma is generated above the substrate W. The first frequency may be 13.56 MHz or higher, for example, 40 MHz or 100 MHz. The matching device 46 matches the internal impedance of the first high-frequency power supply 48 with the load impedance. The first high frequency power supplied from the first high frequency power supply 48 may be applied to the upper electrode 34.

A second high-frequency power supply 90 is connected to the mounting table ST via a power supply line 89 and a matching unit 88. The second high-frequency power supply 90 applies high-frequency power for biasing the second frequency (hereinafter, also referred to as “second high-frequency power”) to the mounting table ST. As a result, the ions in the plasma are drawn into the substrate W on the mounting table ST. The second high frequency power supply 90 outputs high frequency power having a frequency in the range of 200 kHz to 13.56 MHz. The second frequency is different from the first frequency and may be, for example, 400 kHz. The matcher 88 matches the internal impedance of the first high frequency power supply 48 with the load impedance.

The first high-frequency power supply 48 is an example of a high-frequency power supply connected to the first stand and applying high-frequency power. The high frequency power supply may include a second high frequency power supply 90. In the embodiment, hereinafter, the first high frequency power supply 48 is also referred to as a “high frequency power supply”. The filter 101 is connected via the connection line 107a connected to the power supply line 47 and the connection line 107b connected to the connection line 107a, and the first DC power supply 100 is further connected via the connection line 107c. The first DC power supply 100 has a function of outputting a pulsed DC voltage. The first DC power supply 100 is an example of a DC power supply connected to the first stand and applying a DC voltage. Further, the first DC power supply 100 applies a DC voltage to the edge ring 24 via the connection lines 107c and 107b, the switch 105, and the second stand. The filter 101 cuts off or reduces the high frequency component of the high frequency power and protects the first DC power supply 100.

The first DC power supply 100 is connected to the second DC power supply 102 via the connection line 106c. The second DC power supply 102 is connected to the filter 103 via the connection line 106b, the filter 103 is connected to the upper electrode 34 via the connection line 106a, and a DC voltage is applied to the upper electrode 34. The filter 103 blocks or reduces the high frequency component of the high frequency power and protects the second DC power supply 102. The second DC power supply 102 may or may not have a function of outputting a pulsed DC voltage. The second DC power supply 102 is an example of a DC power supply connected to the first stand and applying a DC voltage.

The switch 105 switches on / off the connection between the first high-frequency power supply 48 and the first DC power supply 100 and the second stand. For example, when the switch 105 is turned on, the first high frequency power supply 48 and the first DC power supply 100 are connected to the second stand, and when the switch 105 is turned off, the first high frequency power supply 48 and the first DC power supply 100 are connected. And the second stand are disconnected.

For example, at the time of processing the substrate, the switch 105 is turned on, and the first high-frequency power from the first high-frequency power supply 48 is applied to the first table and the second table. At this time, the first DC voltage is not supplied from the first DC power supply 100. At this time, the second high-frequency power source 90 may apply the second high-frequency power to the first stand and the second stand. Further, at the time of sputtering, the switch 105 is turned off so that the first high-frequency power and the DC voltage are applied to the first table and not applied to the second table. That is, at the time of sputtering, the switch 105 is operated to disconnect the first high frequency power supply 48, the first DC power supply 100, and the second stand. At the time of subsequent substrate processing, the switch 105 is operated again to connect the first high frequency power supply 48, the first DC power supply 100, and the second stand.

The connection line 106c connects the first DC power supply 100 and the second DC power supply 102. The second DC power supply 102 is connected to the upper electrode 34 via the connection line 106b, the filter 103, and the connection line 106a. The filter 103 blocks or reduces the high frequency component of the high frequency power and protects the second DC power supply 102.

An exhaust port 80 is provided at the bottom of the chamber 10, and an exhaust device 84 is connected to the exhaust port 80 via an exhaust pipe 82. The exhaust device 84 has a vacuum pump such as a turbo molecular pump, and can reduce the pressure inside the chamber 10 to a desired degree of vacuum. Further, a carry-in outlet 85 is provided on the side wall of the chamber 10, and the carry-in outlet 85 can be opened and closed by a gate valve 86. Further, a depot shield 11 is detachably provided along the inner wall of the chamber 10 to prevent by-products (depots) generated during etching from adhering to the inner wall. That is, the depot shield 11 constitutes the wall portion of the chamber 10. The depot shield 11 is also provided on the outer periphery of the inner wall member 26. A baffle plate 83 is provided between the depot shield 11 on the chamber wall side at the bottom of the chamber 10 and the depot shield 11 on the inner wall member 26 side. The deposition shield 11 and the baffle plate 83, may be used as the aluminum material coated with ceramic such as Y ₂ O _3.

The substrate processing device 1 is provided with a control unit 200 that controls the operation of the entire device. The control unit 200 executes a desired plasma process according to a process recipe stored in a memory such as a ROM (Read Only Memory) and a RAM (Random Access Memory). In the process recipe, process time, pressure (gas exhaust), first high frequency power, second high frequency power, DC voltage, and various gas flow rates, which are control information of the device for the process conditions, may be set. Further, the temperature inside the chamber (upper electrode temperature, side wall temperature of the chamber, substrate W temperature, electrostatic chuck temperature, etc.), the temperature of the heat transfer medium output from the chiller unit, and the like may be set in the process recipe. The process recipes showing these programs and process conditions may be stored in a hard disk or a semiconductor memory. Further, the process recipe may be set in a predetermined position and read in a state of being housed in a storage medium readable by a portable computer such as a CD-ROM or a DVD.

[Board processing and consumption]
The plasma processing (board processing) of the substrate W and the consumption of the components (consumable parts) in the substrate processing device 1 executed by using the substrate processing device 1 having such a configuration will be described with reference to FIGS. 2 to 4. FIG. 2 is a diagram for explaining the operation of the power supply system during substrate processing according to the embodiment. FIG. 3 is a diagram showing an example of consumption of consumable parts of the substrate processing device 1 according to the embodiment. FIG. 4 is a flowchart showing an example of substrate processing according to the embodiment.

As shown in FIG. 2, in the substrate processing apparatus 1, the first DC power supply 100 applies a pulsed DC voltage to the first table. The second DC power supply 102 applies a DC voltage to the upper electrode 34.

Further, in the substrate processing apparatus 1 according to the embodiment, the first high-frequency power and the pulse-like form are provided on the second table by the configuration (switch 105, first DC power supply 100, filter 101) in the frame A of FIG. A DC voltage can be selectively applied. The application of the first high-frequency power and the pulsed DC voltage to the second platform and the stop of the application can be switched by turning the switch 105 on and off.

When there is no configuration in the A frame of FIG. 2, the first high-frequency power supply 48 applies the first high-frequency power to the first stand and the second stand. The electric field generated by the high-frequency current flowing through the first table and the second table turns the gas introduced from the plurality of gas holes 37 of the upper electrode 34 into plasma. As a result, plasma 2 is generated in the space above the substrate W on the electrostatic chuck 20. Since the plasma 2 is a conductor, a high-frequency current flows from the side wall of the chamber 10 to the connection line 106c via the plasma 2, and also from the upper electrode 34 via the plasma 2 via the connection line 106a, the filter 103, and the connection line 106b. Flows to the connection line 106c. At this time, the high-frequency component of the high-frequency power is cut off or reduced by the filter 103, and the high-frequency current does not flow through the second DC power supply 102. As a result, the second DC power supply 102 is protected.

The second DC power supply 102 applies a DC voltage to the upper electrode 34. As a result, ions are drawn into the upper electrode 34. The direct current flows from the side wall of the chamber 10 to the connection line 106c via the upper electrode 34 and the plasma 2. By drawing ions into the upper electrode 34, the electrode plate 36 shown in FIG. 3A is etched (or consumed), and as shown in FIG. 3B, the silicon forming the electrode plate 36 is punched out. As a result, the surface of the upper electrode 34 in contact with the plasma processing space is consumed, the opening of the gas hole 37 is widened, and the amount of consumption of the electrode plate 36 increases as the process is repeated. Similarly, the edge ring 24 and the insulator ring 25 exposed to plasma are also consumed with each process. As described above, the upper electrode 34, the edge ring 24, and the insulator ring 25 are examples of consumable parts that are consumed by the process, and are parts that are replaced according to the degree of wear.

Conventionally, when the electrode plate 36, the edge ring 24, and the like are consumed, it is necessary to open the chamber 10 to the atmosphere and replace these consumable parts. In particular, the diameter of the electrode plate 36 is larger than the outer diameter of the edge ring 24. Therefore, even when the edge ring 24 can be automatically transported from the carry-in outlet 85 using the transport arm, the electrode plate 36 cannot be automatically transported from the carry-in outlet 85. Therefore, the lid of the chamber 10 was opened, the inside of the chamber 10 was opened to the atmosphere, the electrode plate 36 was replaced, and the chamber 10 was restored over a period of one day or longer, for example. Further, since the electrode plate 36 is mechanically fixed in the chamber 10 and arranged on the ceiling, it takes time to replace the electrode plate 36. For this reason, the operating rate of the substrate processing apparatus 1 is greatly reduced, which affects the productivity.

On the other hand, the substrate processing apparatus 1 according to the embodiment has a configuration within the A frame of FIG. As a result, we propose a technique that enables repair of consumable parts such as the electrode plate 36 and the edge ring 24 without opening the chamber 10 to the atmosphere. As a result, the atmosphere in the chamber 10 can be maintained and the productivity can be improved. In the following, before explaining the repair processing of the consumable parts, the etching processing on the substrate will be described as an example of the substrate processing executed by the substrate processing apparatus 1 according to the embodiment with reference to FIG. The substrate processing shown in FIG. 4 is an example of a control method of the substrate processing apparatus 1.

When this process is started, the control unit 200 provides the substrate W for the product in the chamber 10 (step S1). The control unit 200 carries the substrate W into the chamber 10 using a transfer arm and places it on the mounting table ST. Next, the control unit 200 controls the switch 105 to turn on the connection between the high-frequency power supply, the DC power supply, and the second stand (step S2). Examples of the high-frequency power supply include, but are not limited to, the first high-frequency power supply 48, and the second high-frequency power supply 90 may be used, or the first high-frequency power supply 48 and the second high-frequency power supply 90. May be good. Examples of the DC power supply include, but are not limited to, the first DC power supply 100, and the second DC power supply 102 may be used, and the first DC power supply 100 and the second DC power supply 102 may be used. May be good. Here, the DC voltage is output from the first DC power supply 100.

Next, the control unit 200 supplies a process gas such as an etching gas from the gas supply unit 66 and introduces the process gas into the chamber 10 through the plurality of gas holes 37 (step S3). The control unit 200 exhausts the inside of the chamber 10 by the exhaust device 84 to bring it into a predetermined decompression state.

Next, the control unit 200 supplies high-frequency power from the high-frequency power supply (step S4) and supplies DC voltage from the DC power supply (step S5). As the high frequency power, the first high frequency power supply 48 to the first high frequency power are applied to the first stand and the second stand, and the second high frequency power supply 90 to the second high frequency power are applied to the first stand and the second stand. Apply to 2 pedestals. As the DC voltage, a DC voltage is applied from the second DC power supply 102 to the upper electrode 34.

When the processing of the substrate W is completed, the control unit 200 takes out the substrate W from the chamber 10 (step S6) and ends the main processing.

[Repair process]
Next, the electrode plate 36 is taken as an example of consumable parts, and an example of the repair process of the electrode plate 36 will be described with reference to FIGS. 5 to 7. FIG. 5 is a diagram for explaining the operation of the power supply system at the time of repairing the consumable component (upper electrode 34) according to the embodiment. FIG. 6 is a diagram showing an example of repairing consumable parts of the substrate processing apparatus according to the embodiment. FIG. 7 is a flowchart showing an example of the actual restoration process. The repair process shown in FIG. 7 is an example of a control method for the substrate processing device 1.

The electrode plate 36 is gradually consumed by the processing of the substrate. Therefore, the repair process according to the embodiment may be started when the thickness of the upper electrode 34 is measured and the thickness of the upper electrode 34 becomes equal to or less than a predetermined thickness. The repair process according to the embodiment may be performed at the idling timing of the substrate processing device 1, or may be performed at predetermined maintenance cycles.

As shown in FIG. 5, the target substrate TW is placed on the mounting table ST during the repair process, that is, during sputtering. The target substrate TW is preferably made of the same material as the upper electrode. For example, the target substrate TW is made of silicon.

Further, during the repair process, an inert gas such as argon gas is supplied from the gas supply unit 66 to generate argon plasma 2. By flowing the inert gas through the gas hole 37, silicon is deposited on the electrode plate 36 without blocking the gas hole 37, and the electrode plate 36 is repaired with the silicon.

During the repair process, as shown in FIG. 5, the switch 105 is turned off, the application of the high frequency power and the DC voltage to the second table is stopped, and the edge ring 24 is prevented from being sputtered.

That is, the high frequency power and the pulsed DC voltage are applied to the first table and not to the second table. As a result, the ions in the plasma 2 are drawn into the target substrate TW, and the substrate TW is sputtered. As a result, as shown in FIG. 6A, sputtered silicon particles are ejected from the substrate TW and adhered to the electrode plate 36. As a result, as shown in FIG. 6B, the substrate TW is consumed, and the upper electrode 34 can be regenerated and repaired by the silicon film deposited on the upper electrode 34. Further, during the repair process, the substrate TW is sputtered while ejecting argon gas from the gas hole 37. As a result, it is possible to prevent the gas hole 37 from being blocked by the silicon deposited on the electrode plate 36.

When only a pulsed DC voltage is applied to the first table, it is difficult to sputter the substrate TW. Therefore, the high-frequency power and the pulsed DC voltage are superposed and applied to the first table, and plasma is generated by the high-frequency power. When only high frequency power is applied to the first table, the substrate TW can be sputtered. Therefore, instead of applying the high-frequency power and the pulsed DC voltage to the first table, only the high-frequency power may be applied to the first table. Further, during the repair process, it is not necessary to apply a DC voltage from the second DC power supply 102 to the upper electrode 34. Therefore, the second DC power supply 102 may not be present at the time of the repair process.

During the repair process, the high-frequency current is output from the high-frequency power supply, flows from the side wall of the chamber 10 to the connection line 106c via the first table and the plasma 2, and flows from the upper electrode 34 to the connection lines 106a and 106b via the plasma 2. , 106c. At this time, since the high-frequency components of the high-frequency power generated by the filters 101 and 103 are cut off or reduced, the high-frequency current does not flow through the first DC power supply 100 and the second DC power supply 102, and the first DC power supply does not flow. The power source 100 and the second DC power source 102 are protected.

The pulsed DC voltage is output from the first DC power supply 100, flows from the side wall of the chamber 10 to the connection line 106c via the first platform and the plasma 2, and also flows from the upper electrode 34 via the plasma 2. It flows to 106a, 106b, 106c.

The flow of the repair process of the electrode plate 36 according to the embodiment will be described with reference to the flowchart of FIG. When the repair process of the electrode plate 36 is started, the control unit 200 provides the target substrate TW in the chamber 10 (step S11). The control unit 200 carries the target substrate TW into the chamber 10 by using a transfer arm, and mounts the target substrate TW on the mounting table ST. Next, the control unit 200 controls the switch 105 to switch off the connection between the high-frequency power supply, the DC power supply, and the second stand (step S12).

Next, the control unit 200 supplies argon gas from the gas supply unit 66 and introduces it into the chamber 10 through the plurality of gas holes 37 (step S13). The control unit 200 exhausts the inside of the chamber 10 by the exhaust device 84 to bring it into a predetermined decompression state.

Next, the control unit 200 supplies high-frequency power from the high-frequency power supply to the first stand (step S14), and supplies a pulsed DC voltage from the DC power supply to the first stand (step S15). As the high-frequency power, the first high-frequency power supply 48 to the first high-frequency power is applied to the mounting table ST. The second high-frequency power from the second high-frequency power source 90 may be applied to the mounting table ST. As the DC voltage, a pulsed DC voltage is applied from the first DC power supply 100 to the first stand. At this time, the high frequency power and the pulsed DC voltage are not applied to the second table.

Argon gas is turned into plasma by high-frequency power, and a pulsed DC voltage is applied to the first table to sputter the target substrate TW with argon plasma ions. As a result, silicon can be scattered from the target substrate TW and deposited on the electrode plate 36. Thereby, the electrode plate 36 can be repaired. When the repair process is completed, the control unit 200 takes out the target substrate TW from the chamber 10 (step S16) and ends the process.

[Modification 1]
Next, the repair process according to the first modification of the embodiment, the configuration of the substrate processing device 1, and the operation of the power supply system will be described with reference to FIG. FIG. 8 is a diagram showing an example of the configuration of the substrate processing device 1 and the operation of the power supply system according to the first modification of the embodiment.

The substrate processing apparatus 1 according to the first modification does not have the first DC power supply 100, but connects the second DC power supply 102 to the first stand via the connection line 106c, and the second DC power supply 102. A pulsed DC voltage is supplied to the first unit. That is, in the first modification, the second DC power supply 102 has a function of outputting a pulsed DC voltage. Further, the connection line 107c is provided with a switch 109b, and the connection line 106b is provided with a switch 109a. In the first modification, when a DC voltage is applied to the upper electrode 34, the second DC power supply 102 turns on the connection of the switch 109a and turns off the connection of the switch 109b. When a pulsed DC voltage is applied to the first table, the connection of the switch 109a is turned off and the connection of the switch 109b is turned on. As a result, the DC voltage of the pulse wave is applied to the first unit. As a result, the first DC power supply 100 can be eliminated.

From the above embodiment and the first modification, the DC power supply may have at least one of the first DC power supply 100 and the second DC power supply 102. Then, a pulsed DC voltage may be supplied to the first stand from at least one of the first DC power supply 100 and the second DC power supply. That is, the first DC power supply 100 and the second DC power supply 102 may be different power supplies or may be the same power supply.

[Modification 2]
Next, the repair process of the modified example 2 of the embodiment will be described with reference to FIG. FIG. 9 is a diagram showing an example of repairing the target substrate TW and the consumable component (upper electrode 34) according to the second modification of the embodiment. In the second modification, the target substrate TW is thicker on the center side of the substrate TW than on the peripheral side. The shape and thickness of the target substrate TW are designed in advance according to the wear of the electrode plate 36. For example, the thickness of the target substrate TW facing the portion where the wear of the electrode plate 36 is relatively large is made thicker than the thickness of the target substrate TW facing the portion where the wear of the electrode plate 36 is relatively small.

Depending on the state of plasma, as shown in FIG. 9A, the central side of the upper electrode 34 may be more easily scraped than the outer peripheral side, and the amount of consumption may increase. Therefore, the lower surface of the upper electrode 34 can be repaired flat by increasing the amount of silicon deposited on the central side of the upper electrode 34 to be larger than the amount of silicon deposited on the outer peripheral side.

Therefore, in the second modification, the target substrate TW has a shape in which the thickness of the center side of the substrate TW is thicker than that of the outer peripheral side and the target substrate TW is raised in an arc shape on the center side of the substrate TW. As a result, the distance between the center side of the upper electrode 34 and the substrate TW can be shorter than that on the outer peripheral side. As a result, the amount of sputtering on the center side of the substrate TW is larger than the amount of sputtering on the outer peripheral side of the substrate TW, and the amount of silicon deposited on the center side of the upper electrode 34 can be larger than the amount of silicon deposited on the outer peripheral side. .. Thereby, the substrate TW can be used to adjust the repair uniformity of the upper electrode 34.

[Modification 3]
Next, the repair process of the modified example 3 of the embodiment will be described with reference to FIGS. 10 to 12 by taking the repair of the edge ring 24 as an example. FIG. 10 is a diagram showing an example of the configuration of the substrate processing device 1 and the operation of the power supply system according to the third modification of the embodiment. FIG. 11 is a diagram showing an example of repairing a consumable part (edge ring 24) of the substrate processing apparatus 1 according to the third modification of the embodiment. FIG. 12 is a flowchart showing an example of the repair process according to the third modification of the embodiment. The repair process shown in FIG. 12 is an example of a control method for the substrate processing device 1. In the repair process according to the third modification of FIG. 12, the same step number is assigned to the same process as the repair process according to the embodiment of FIG. 7, and the description of the same step is omitted.

In the third modification, after the step of supplying the pulsed DC voltage to the first table, there is a step of supplying the DC voltage from the second DC power supply 102 to the upper electrode 34. That is, after the silicon is deposited on the upper electrode 34 by the sputtering performed in the repair process according to the embodiment, the repair process of the edge ring 24 is executed. In the process of repairing the edge ring 24, as shown in FIG. 10, the cover substrate DW is placed on the electrostatic chuck 20 in order to protect the electrostatic chuck 20. Further, during the repair process of the edge ring 24, an inert gas such as argon gas is supplied from the gas supply unit 66 to generate argon plasma.

Further, the switch 105 is turned off, the application of the high frequency power and the pulsed DC voltage to the second table is stopped, and the edge ring 24 is prevented from being sputtered.

A DC voltage is applied to the upper electrode 34. As a result, as shown in FIG. 11A, argon ions are drawn into the upper electrode 34, and the silicon deposited on the upper electrode 34 is ejected and adhered to the edge ring 24. As a result, as shown in FIG. 11B, the edge ring 24 can be repaired by depositing the silicon deposited on the upper electrode 34 on the edge ring 24. During the repair process, the electrostatic chuck 20 is covered with the cover substrate DW. As a result, silicon does not deposit on the electrostatic chuck 20. Thereby, the electrostatic chuck 20 can be protected.

The flow of the repair process of the edge ring 24 according to the third modification will be described with reference to the flowchart of FIG. When the repair process of the edge ring 24 is started, the control unit 200 executes the process of steps S11 to S16, which is the same as the repair process according to the embodiment of FIG. As a result, silicon can be punched out from the target substrate TW and deposited on the upper electrode 34. As a result, as shown in FIG. 11A, a silicon film can be formed on the lower surface of the upper electrode 34.

Next, the control unit 200 places the cover substrate DW on the electrostatic chuck 20 (step S17). Next, the control unit 200 stops applying the pulsed DC voltage (step S18). Next, the control unit 200 applies a DC voltage to the upper electrode 34 (step S19). At this time, high-frequency power is applied to the first table to generate argon plasma. By applying a DC voltage to the upper electrode 34, argon ions are driven into the upper electrode 34, and silicon of the upper electrode 34 is deposited on the edge ring 24. As a result, the edge ring 24 can be repaired. When the repair process is completed, the control unit 200 takes out the cover substrate DW from the chamber 10 (step S20), and ends this process.

As described above, according to the repair treatment according to the embodiment and the modified examples 1 to 3, the inside of the chamber 10 of the substrate processing apparatus 1 is maintained in a sealed state without opening the chamber 10. Consumable parts can be repaired. As a result, the atmosphere inside the chamber 10 can be maintained and the productivity can be improved.

It should be considered that the substrate processing apparatus and the control method of the substrate processing apparatus according to the embodiment disclosed this time are exemplary in all respects and are not restrictive. The above embodiments can be modified and improved in various forms without departing from the scope of the appended claims and their gist. The matters described in the plurality of embodiments may have other configurations within a consistent range, and may be combined within a consistent range.

The substrate processing apparatus of the present disclosure is any type of apparatus of Capacitively Coupled Plasma (CCP), Inductively Coupled Plasma (ICP), Radial Line Slot Antenna (RLSA), Electron Cyclotron Resonance Plasma (ECR), and Helicon Wave Plasma (HWP). But it is applicable.

1 Substrate processing device 10 Reaction chamber 14 Support plate 16 Electrode plate 20 Electrostatic chuck 24 Edge ring 34 Upper electrode 36 Electrode plate 47, 89 Power supply line 66 Gas supply unit 48 First high frequency power supply 90 Second high frequency power supply 100 First DC power supply 102 Second DC power supply 106a, 106b, 106c Connection line 107a, 107b, 107c Connection line 200 Control unit W board TW Target board DW Cover board ST mounting stand

Claims (11)

With the reaction chamber
A mounting table provided in the reaction chamber, wherein the above-mentioned table is a first table and a second table electrically separated from the first table around the first table. With a table and a mounting table with
A high-frequency power supply connected to the first stand and applying high-frequency power,
A DC power supply connected to the first stand and applying a DC voltage,
With the counter electrode facing the above-mentioned stand,
A gas supply unit that supplies gas into the reaction chamber through a gas hole provided in the counter electrode, and a gas supply unit.
Has a control unit
The control unit
The process of providing the target substrate on the first table and
A step of supplying gas from the gas supply unit through the gas hole into the reaction chamber,
The process of supplying high-frequency power from the high-frequency power supply to the first unit, and
A step of applying a pulsed DC voltage from the DC power supply to the first table, adhering sputter particles from the target substrate onto the counter electrode, and regenerating the counter electrode.
Is configured to control
Board processing equipment. The DC power supply has at least one of a first DC power supply connected to the first stand and a second DC power supply connected to the counter electrode.
The control unit
It is configured to supply the pulsed DC voltage to the first stand from at least one of the first DC power supply and the second DC power supply.
The substrate processing apparatus according to claim 1. The first DC power supply and the second DC power supply are the same power supply.
The substrate processing apparatus according to claim 2. The first DC power supply and the second DC power supply are different power supplies.
The substrate processing apparatus according to claim 2. The control unit
The second DC power supply is connected to the first stand via a connection line, and the second DC power supply is connected to the first stand.
The second DC power source is configured to supply the pulsed DC voltage to the first stand.
The substrate processing apparatus according to claim 3. After the step of supplying the pulsed DC voltage to the first table, there is a step of supplying the DC voltage from the second DC power supply to the counter electrode.
The substrate processing apparatus according to any one of claims 2 to 5. The center side of the target substrate is thicker than the peripheral side,
The substrate processing apparatus according to any one of claims 1 to 6. The target substrate is made of the same material as the counter electrode.
The substrate processing apparatus according to any one of claims 1 to 7. The target substrate is made of silicon.
The substrate processing apparatus according to claim 8. The control unit
The process of providing a substrate for a product on the first table and
A step of turning on the connection between the high frequency power supply, the DC power supply, and the second stand by a switch.
The process of supplying gas from the gas supply unit to the gas hole and
A step of supplying high-frequency power from the high-frequency power source to the first table and the second table, and
A process of supplying a DC voltage from the DC power supply to the first table and the second table, and
Is configured to control
The substrate processing apparatus according to any one of claims 1 to 9. With the reaction chamber
A mounting table provided in the reaction chamber, wherein the above-mentioned table is a first table and a second table electrically separated from the first table around the first table. With a table and a mounting table with
A high-frequency power supply connected to the first stand and applying high-frequency power,
A DC power supply connected to the first stand and applying a DC voltage,
With the counter electrode facing the above-mentioned stand,
A method for controlling a substrate processing apparatus having a gas supply unit for supplying gas into the reaction chamber through a gas hole provided in the counter electrode.
The process of providing the target substrate on the first table and
A step of supplying gas from the gas supply unit through the gas hole into the reaction chamber,
The process of supplying high-frequency power from the high-frequency power supply to the first unit, and
A step of applying a pulsed DC voltage from the DC power supply to the first table, adhering sputter particles from the target substrate onto the counter electrode, and regenerating the counter electrode.
Have,
Control method of substrate processing equipment.

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