JPS58114437A - Electrostatic attracting method - Google Patents

Electrostatic attracting method

Info

Publication number
JPS58114437A
JPS58114437A JP21399481A JP21399481A JPS58114437A JP S58114437 A JPS58114437 A JP S58114437A JP 21399481 A JP21399481 A JP 21399481A JP 21399481 A JP21399481 A JP 21399481A JP S58114437 A JPS58114437 A JP S58114437A
Authority
JP
Japan
Prior art keywords
polarity
adsorption
voltage
switch
once
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21399481A
Other languages
Japanese (ja)
Other versions
JPS614611B2 (en
Inventor
Naomichi Abe
阿部 直道
Yuji Furumura
雄二 古村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP21399481A priority Critical patent/JPS58114437A/en
Publication of JPS58114437A publication Critical patent/JPS58114437A/en
Publication of JPS614611B2 publication Critical patent/JPS614611B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/37Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being movable elements
    • G09F9/372Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being movable elements the positions of the elements being controlled by the application of an electric field

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Jigs For Machine Tools (AREA)

Abstract

PURPOSE:To prevent the lowering of attractive force by repeating polarity at every once electrostatic attraction. CONSTITUTION:Copper foil is shaped onto a supporter with approximately 0.1mm. in necessary form, the copper foil side is bonded onto a flat insulating substrate, and an electrode is manufactured. Polarity is changed over at every once adsorption by a switch 5. According to such constitution, since the polarity of residual charges is inverted at every once, the charges are adsorbed under a state in which there is hardly residual charges, and attractive force does not lower.

Description

【発明の詳細な説明】 (1)  発明の技術分野 半導体ウェーハー、半導体チップ等の物体を吸着し、ハ
ンドリングする場合等に使用される静電吸着法に係り、
特に、その吸着力が安定で、強い方法に関する− (2)従来技術と問題点 第1図は第1の従来例であシ、一対の電極1は絶縁物2
により支持され、包囲されてお9、スイッチ3をONK
するととkよシ直流電源番の電圧を電極1に印加し、物
体を吸着し、スイッチ4をOFFにすることによりて物
体を離すものである^第2図は第2の従来例であシ、複
数対の電極1が絶縁物2により支持、包囲され、スイッ
チ3をOF’Fにして直流電源4の全電圧を電極1に印
加し、物体を吸着し、スイッチ3をONにして印加電圧
を低下させ物体をiすものである。ここでR1、R1は
分圧抵抗で、R1>>Rtとされている。
[Detailed Description of the Invention] (1) Technical Field of the Invention This invention relates to an electrostatic adsorption method used to adsorb and handle objects such as semiconductor wafers and semiconductor chips.
In particular, it concerns a method in which the adsorption force is stable and strong. (2) Prior art and problems FIG.
Supported and surrounded by 9, switch 3 is turned on
Then, a voltage of the DC power supply number is applied to the electrode 1 to attract the object, and the object is released by turning off the switch 4. Figure 2 shows the second conventional example. , a plurality of pairs of electrodes 1 are supported and surrounded by insulators 2, the switch 3 is turned OFF', the full voltage of the DC power supply 4 is applied to the electrodes 1, the object is attracted, and the switch 3 is turned ON to apply the applied voltage. It lowers the value of the object and makes the object i. Here, R1 and R1 are voltage dividing resistors, and R1>>Rt.

第1の従来例ではスイッチ3をOFFとし、物体を離し
九後、絶縁物2″の吸着面上に電荷が残留し、続いて行
なわれる吸着の々を著しく低下させるという欠点を持っ
ている。−!た、第2の従来例では物体を離す場合に配
線を開放とせず、電圧を低下させるものであるので絶縁
物2の吸着面に残留する電荷は第1の従来′例に比べて
小さいという特徴を持っているが、この吸着が連続して
繰り返し行なわれる場合に前記残留電荷が加算されて行
き、吸着力が徐々に低下して行くという現象が見られる
◇いずれの場合でも吸着を連続して繰り返す時には吸着
力の低下は避けられない。
The first conventional example has the disadvantage that, after the switch 3 is turned off and the object is released, charges remain on the attracting surface of the insulator 2'', which significantly reduces the success of subsequent attracting operations. -!Also, in the second conventional example, the voltage is lowered without opening the wiring when separating the object, so the charge remaining on the attraction surface of the insulator 2 is smaller than in the first conventional example. However, when this adsorption is repeated continuously, the residual charge is added up and the adsorption force gradually decreases.◇In either case, if the adsorption is repeated continuously, When repeating this process, a decrease in adsorption force is inevitable.

なお、第1o従来例では一対の電極を示し、第2の従来
例では仮数対の電極を示しているが、−対でも複数対で
も前記の現象には変夛がない。
Although the first conventional example shows a pair of electrodes, and the second conventional example shows a mantissa pair of electrodes, the above-mentioned phenomenon does not change whether the electrodes are a negative pair or a plurality of pairs.

(3)発明の目的 本発明の目的は前述のような吸着力の低下を起さず、連
続して繰シ返し吸着を行なってもその吸着力が強く、安
定である方法を提供することにある・ (4)発明の構成 本発明は第3図のように極性切換スイッチ5を新たに設
け、−回の吸着毎に極性を切夛換えることを特徴として
いる。
(3) Purpose of the Invention The purpose of the present invention is to provide a method that does not cause the above-mentioned decrease in suction force, and has a strong and stable suction force even when suction is repeatedly performed continuously. (4) Structure of the Invention The present invention is characterized in that a polarity changeover switch 5 is newly provided as shown in FIG. 3, and the polarity is changed every - times of suction.

第4図は電極lに電圧Vが印加され、半導体ウェーハー
等の導伝性のある物体6が吸着されている時の絶縁物2
の分極(↑印)と鱒起電荷(+または一記号)を示して
いる。(a)は残留電荷がない状態で吸着され九場合、
(b)は残留電荷がある状態で吸着された場合、(0)
は残留電荷があシ、電圧Vの極性を反転〔て印加した場
合である。
FIG. 4 shows the insulator 2 when a voltage V is applied to the electrode l and a conductive object 6 such as a semiconductor wafer is attracted.
The polarization (↑ mark) and trout electrostatic charge (+ or 1 symbol) are shown. (a) is adsorbed with no residual charge,
(b) is (0) when adsorbed with residual charge.
is the case where there is no residual charge and the polarity of the voltage V is reversed and applied.

(b)の場合は電圧VKよって生ずる分極の作用が残留
電荷によって一部打ち消され、吸着力は(a)の場合よ
り弱くなるが、(C)の場合は残留電荷の作用が分極の
作用に加其されるので吸着力は(&)の場合より強くな
る。本発明のように印加電圧の極性を切り換えながら吸
着を繰り返した場合には前述の第1および第2の従来例
と異なって残留電荷の極性が1回毎に反転するので同極
性の電荷が加算されて行くようなことはない。従りて(
a)の場合とほぼ同じ吸着力が%N得られるっ第1回目
の吸着による残留電荷が第2回目の吸着で消去し切れな
かった場合は第2(!lJ目の吸着力は(0)の場合の
ようKその残った分だけ若干増加する。]!にこの残留
電荷が第3回目の吸着まで持ち越された場合には第3回
目の吸着力e(b)の場合のようKその持ち越した分だ
け若干低下する。
In the case of (b), the polarization effect caused by the voltage VK is partially canceled out by the residual charge, and the adsorption force becomes weaker than in the case of (a), but in the case of (C), the effect of the residual charge is due to the polarization effect. Since it is added, the adsorption force becomes stronger than in the case of (&). When adhesion is repeated while switching the polarity of the applied voltage as in the present invention, unlike the first and second conventional examples described above, the polarity of the residual charge is reversed each time, so charges of the same polarity are added. There's no way you'll be left behind. Therefore (
Almost the same adsorption force as in case a) can be obtained by %N. If the residual charge caused by the first adsorption cannot be completely erased by the second adsorption, the adsorption force of the second (!lJ) is (0). If this residual charge is carried over to the third adsorption, the K will be carried over as in the case of the third adsorption force e(b). However, this decreases slightly.

以上のように本発明の方法は吸着力に若干の変動が起シ
得るが、第1および第2の従来例のように吸着力が回を
重ねる度に一方的に低下しては行かないということが概
念的に把握される。
As described above, the method of the present invention may cause slight fluctuations in the adsorption force, but unlike the first and second conventional examples, the adsorption force does not unilaterally decrease with each repetition. This can be understood conceptually.

(5)  発明の実施例 半導体ウェーハー等の静電吸着に使われる電極は従来の
公知技術と変るところはな込が、たとえばプリント板に
使われる銅張シ積層板を利用することが便利である。
(5) Embodiments of the Invention The electrodes used for electrostatic adsorption of semiconductor wafers, etc. are different from conventional known technology, but it is convenient to use, for example, a copper-clad laminate used for printed boards. .

支持体が01wJ位の薄いものを選び、その上の鋼箔を
ホトエツチングによシ所要の電極形状に整形し、その銅
箔側を平坦な絶縁物基板に当てて接着する方法等がある
There is a method of selecting a thin support of about 01 wJ, shaping the steel foil on it into the desired electrode shape by photo-etching, and bonding the copper foil side to a flat insulating substrate.

第5図は前記のような電極に直流電圧を供給する回路で
あシ、本発明の極性切り換えを自動的に行なうものであ
るっ低圧電源+LV、−L’Vによって駆動されるトラ
ンジスタ’rr1. Tryは一般的なフリップフロッ
グ回路であシ、’rrsは極性切り換え用リレー9の駆
動トランジスタである。スイッチフをONとすると電極
への印加電圧VがON・OFF用リレー8によって出力
端子lOに現われる。スイッチフt−ONとしたときリ
レー8の励磁コイルに加えられる電圧は同時に7リツプ
フロツプ回路に加えら′れ、Try、TryのON −
OF’?状態を反転させ、電極への印加電圧の極性を反
転させる。従ってスイッチ1のONO[に自動的に極性
が切り換り、作業者は余分な操作なしで、本発明の方法
を実施出来る。
FIG. 5 shows a circuit for supplying DC voltage to the electrodes as described above, which automatically performs polarity switching according to the present invention. The transistors 'rr1. Try is a general flip-flop circuit, and 'rrs is a drive transistor for the polarity switching relay 9. When the switch is turned ON, the voltage V applied to the electrode appears at the output terminal 10 by the ON/OFF relay 8. When the switch is turned on, the voltage applied to the excitation coil of relay 8 is simultaneously applied to the 7 lip-flop circuit, and Try and Try are turned on.
OF'? The state is reversed, and the polarity of the voltage applied to the electrodes is reversed. Therefore, the polarity is automatically switched to ONO[ of the switch 1, and the operator can carry out the method of the present invention without any extra operations.

なお、スイッチフによるチャタリングを防止するために
7リツプ70ツブ回路のCおよびR($5図記載)で定
まる時定数をいくらか大きくしておくことが望ましい。
In order to prevent chattering due to switch-off, it is desirable to make the time constant determined by C and R (shown in the figure $5) of the 7-lip 70-tub circuit somewhat larger.

また、通常のシリコンウェーハーを吸着するためには前
記銅張シ積層板をαl間としたとき、印加電圧Vは20
00ボルト位で良い、 (6)発明の効メミ 次に掲げる表は前述の第1の従来例、第2の従来例、お
よび本発明の実施例において、連続して吸着を繰り返し
た場合の吸着力の変化を測定した一例である) 第1回目 第2回目 jI3回目 第4回目 第6回目
第X(昧例 530g  320g  150g  1
40g  80g第2O@3j@14 560g  4
10g  220g  240g  1801騎−01
例 500g  630g  5EiOg  マOOg
  530g本表からも判る通り、本発明によれば若干
の吸着力の変動はあるが、従来例のように吸着を不能と
する程の吸着力低下は全く起さず、安定した吸着が可能
である。なお、前記衣の本発明の実施例は一対の電極の
場合であるが、複数対の電極に於ても効果は同じである
In addition, in order to adsorb a normal silicon wafer, when the copper-clad laminate is set between αl, the applied voltage V is 20
(6) Effects of the invention The following table shows the adsorption results when adsorption is repeated continuously in the first conventional example, the second conventional example, and the embodiment of the present invention. This is an example of measuring changes in force) 1st measurement 2nd measurement jI 3rd measurement 4th measurement 6th measurement
40g 80g 2nd O@3j@14 560g 4
10g 220g 240g 1801ki-01
Example 500g 630g 5EiOg MaOOg
530g As can be seen from this table, according to the present invention, although there is a slight fluctuation in the adsorption force, there is no decrease in adsorption force to the extent that adsorption becomes impossible as in the conventional example, and stable adsorption is possible. be. In addition, although the embodiment of the present invention of the clothing uses one pair of electrodes, the same effect can be obtained even if multiple pairs of electrodes are used.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は第1の従来例、第2図は第2の従来例、第3図
は本発明の実施例を示す図である。第4図は残留電荷に
よる吸着力の変化を説明する図でちゃ、第5図は本発明
の実施例の電圧供給回路を示゛す図である。ここで1は
電極、2は絶縁物、3はスイッチ、番は直流電源、5は
極性切換スイッチ、6は導電性物体、1社スイッチ、8
は電極への印加電圧t″ON、OFFするリレー、9は
電極への印加電圧の極性を切シ換えるリレー、ユ0は出
力端子である。 第 II!!、・ 第 2 図 地3図
FIG. 1 shows a first conventional example, FIG. 2 shows a second conventional example, and FIG. 3 shows an embodiment of the present invention. FIG. 4 is a diagram illustrating changes in adsorption force due to residual charge, and FIG. 5 is a diagram showing a voltage supply circuit according to an embodiment of the present invention. Here, 1 is an electrode, 2 is an insulator, 3 is a switch, number is a DC power supply, 5 is a polarity switch, 6 is a conductive object, 1 company switch, 8
9 is a relay that switches the voltage applied to the electrode on and off, 9 is a relay that switches the polarity of the voltage applied to the electrode, and 0 is an output terminal.

Claims (1)

【特許請求の範囲】[Claims] 絶縁体によって包囲された一対またはそれ以上の対から
成る電極に電圧を印加し、物体を静電吸着力によって吸
着する方法に於て、物体を一回吸着する毎に該電極に印
加する電圧の極性を反転することを特徴とした静電吸着
方法。
In a method in which a voltage is applied to one or more pairs of electrodes surrounded by an insulator and an object is attracted by electrostatic attraction, the voltage applied to the electrodes each time an object is attracted is An electrostatic adsorption method characterized by reversing polarity.
JP21399481A 1981-12-26 1981-12-26 Electrostatic attracting method Granted JPS58114437A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21399481A JPS58114437A (en) 1981-12-26 1981-12-26 Electrostatic attracting method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21399481A JPS58114437A (en) 1981-12-26 1981-12-26 Electrostatic attracting method

Publications (2)

Publication Number Publication Date
JPS58114437A true JPS58114437A (en) 1983-07-07
JPS614611B2 JPS614611B2 (en) 1986-02-12

Family

ID=16648493

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21399481A Granted JPS58114437A (en) 1981-12-26 1981-12-26 Electrostatic attracting method

Country Status (1)

Country Link
JP (1) JPS58114437A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04230051A (en) * 1990-12-27 1992-08-19 Kyocera Corp Control device for electrostatic chuck
JP2015162596A (en) * 2014-02-27 2015-09-07 東京エレクトロン株式会社 Substrate holding method, substrate holding device, and bonding device
JP2018206935A (en) * 2017-06-02 2018-12-27 東京エレクトロン株式会社 Plasma processing apparatus, electrostatic attraction method, and electrostatic attraction program

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04230051A (en) * 1990-12-27 1992-08-19 Kyocera Corp Control device for electrostatic chuck
JP2015162596A (en) * 2014-02-27 2015-09-07 東京エレクトロン株式会社 Substrate holding method, substrate holding device, and bonding device
JP2018206935A (en) * 2017-06-02 2018-12-27 東京エレクトロン株式会社 Plasma processing apparatus, electrostatic attraction method, and electrostatic attraction program

Also Published As

Publication number Publication date
JPS614611B2 (en) 1986-02-12

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