JP2016131235A5 - - Google Patents

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Publication number
JP2016131235A5
JP2016131235A5 JP2015200701A JP2015200701A JP2016131235A5 JP 2016131235 A5 JP2016131235 A5 JP 2016131235A5 JP 2015200701 A JP2015200701 A JP 2015200701A JP 2015200701 A JP2015200701 A JP 2015200701A JP 2016131235 A5 JP2016131235 A5 JP 2016131235A5
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JP
Japan
Prior art keywords
voltage
plasma processing
peak
electrode
value
Prior art date
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Application number
JP2015200701A
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English (en)
Japanese (ja)
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JP6567943B2 (ja
JP2016131235A (ja
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Publication date
Application filed filed Critical
Priority to US14/972,286 priority Critical patent/US9779919B2/en
Priority to KR1020150187518A priority patent/KR101777253B1/ko
Priority to TW105100379A priority patent/TWI604496B/zh
Publication of JP2016131235A publication Critical patent/JP2016131235A/ja
Priority to US15/671,381 priority patent/US9887070B2/en
Publication of JP2016131235A5 publication Critical patent/JP2016131235A5/ja
Application granted granted Critical
Publication of JP6567943B2 publication Critical patent/JP6567943B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2015200701A 2015-01-09 2015-10-09 プラズマ処理装置およびプラズマ処理方法 Active JP6567943B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US14/972,286 US9779919B2 (en) 2015-01-09 2015-12-17 Plasma processing apparatus and plasma processing method
KR1020150187518A KR101777253B1 (ko) 2015-01-09 2015-12-28 플라즈마 처리 장치 및 플라즈마 처리 방법
TW105100379A TWI604496B (zh) 2015-01-09 2016-01-07 電漿處理裝置及電漿處理方法
US15/671,381 US9887070B2 (en) 2015-01-09 2017-08-08 Plasma processing apparatus and plasma processing method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015002723 2015-01-09
JP2015002723 2015-01-09

Publications (3)

Publication Number Publication Date
JP2016131235A JP2016131235A (ja) 2016-07-21
JP2016131235A5 true JP2016131235A5 (enExample) 2018-08-02
JP6567943B2 JP6567943B2 (ja) 2019-08-28

Family

ID=56414848

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015200701A Active JP6567943B2 (ja) 2015-01-09 2015-10-09 プラズマ処理装置およびプラズマ処理方法

Country Status (3)

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JP (1) JP6567943B2 (enExample)
KR (1) KR101777253B1 (enExample)
TW (1) TWI604496B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6778639B2 (ja) * 2017-03-08 2020-11-04 東京エレクトロン株式会社 高周波発生器及びプラズマ処理装置
WO2018173095A1 (ja) * 2017-03-21 2018-09-27 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP7134695B2 (ja) * 2018-04-27 2022-09-12 東京エレクトロン株式会社 プラズマ処理装置、及び電源制御方法
US10896808B2 (en) * 2018-07-25 2021-01-19 Lam Research Corporation Maintenance mode power supply system
JP7234036B2 (ja) * 2019-05-28 2023-03-07 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
WO2020100357A1 (ja) * 2019-08-05 2020-05-22 株式会社日立ハイテク プラズマ処理装置
JP7398909B2 (ja) * 2019-09-12 2023-12-15 東京エレクトロン株式会社 静電吸着方法及びプラズマ処理装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6361645B1 (en) * 1998-10-08 2002-03-26 Lam Research Corporation Method and device for compensating wafer bias in a plasma processing chamber
JP4468194B2 (ja) 2005-01-28 2010-05-26 株式会社日立ハイテクノロジーズ プラズマ処理方法およびプラズマ処理装置
JP4815298B2 (ja) * 2006-07-31 2011-11-16 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP5491648B2 (ja) * 2006-10-06 2014-05-14 東京エレクトロン株式会社 プラズマエッチング装置およびプラズマエッチング方法
JP5372419B2 (ja) 2008-06-25 2013-12-18 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法
JP5358364B2 (ja) * 2009-09-11 2013-12-04 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP2012129429A (ja) * 2010-12-17 2012-07-05 Hitachi High-Technologies Corp プラズマ処理方法
JP5802454B2 (ja) 2011-06-30 2015-10-28 株式会社日立ハイテクノロジーズ プラズマ処理方法
US9076831B2 (en) * 2011-11-04 2015-07-07 Lam Research Corporation Substrate clamping system and method for operating the same

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