JP2016131235A5 - - Google Patents
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- JP2016131235A5 JP2016131235A5 JP2015200701A JP2015200701A JP2016131235A5 JP 2016131235 A5 JP2016131235 A5 JP 2016131235A5 JP 2015200701 A JP2015200701 A JP 2015200701A JP 2015200701 A JP2015200701 A JP 2015200701A JP 2016131235 A5 JP2016131235 A5 JP 2016131235A5
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- 210000002381 Plasma Anatomy 0.000 claims 20
- 238000003672 processing method Methods 0.000 claims 11
- 230000000051 modifying Effects 0.000 claims 5
- 238000001020 plasma etching Methods 0.000 claims 3
- 238000009832 plasma treatment Methods 0.000 claims 3
- 230000002123 temporal effect Effects 0.000 claims 1
Claims (14)
プラズマを生成するための高周波電力を供給する第１の高周波電源と、
前記試料を静電吸着膜に静電吸着させる第１の電極および第２の電極を具備し、前記試料が載置される試料台と、
前記第１の電極に第１の直流電圧を印加する第１の直流電源と、
前記第２の電極に第２の直流電圧を印加する第２の直流電源と、
前記試料台に高周波電力を供給する第２の高周波電源と、
前記試料台に印加された高周波電圧の第１の電圧値および第２の電圧値を検知する電圧検知部と、
前記第１の直流電源および前記第２の直流電源を制御する電源制御部と、を備え、
前記電源制御部は、前記試料台に供給される高周波電力が時間変調される場合、前記第１の電圧値、前記第２の電圧値および前記時間変調のデュティ比に基づいて前記高周波電圧のピーク間電圧値の時間平均値を求め、予め設定された前記第１の直流電圧と予め設定された前記第２の直流電圧の電位差および前記求められた時間平均値を用いて前記第１の直流電圧および前記第２の直流電圧を求め、前記求められた前記第１の直流電圧および前記求められた前記第２の直流電圧をそれぞれ前記第１の電極および前記第２の電極に印加するように前記第１の直流電源および前記第２の直流電源をそれぞれ制御し、
前記第１の電圧値は、前記時間変調された高周波電力の第１の期間における前記高周波電圧のピーク間電圧値であり、
前記第２の電圧値は、前記時間変調された高周波電力の第２の期間における前記高周波電圧のピーク間電圧値であり、
前記第１の期間の振幅は、前記第２の期間の振幅より大きいことを特徴とするプラズマ処理装置。 A processing chamber in which the sample is plasma treated ;
First a high frequency power source supplying high frequency power to generate the flop plasma,
A sample stage comprises a first electrode and a second electrode for electrostatically adsorbing the previous SL samples electrostatic adsorption film, the sample is placed,
A first DC power supply for applying a first DC voltage to the first electrode;
A second DC power source for applying a second DC voltage to the second electrode;
A second high frequency power supply for supplying high frequency power to the sample stage;
A voltage detector for detecting a first voltage value and a second voltage value of the high-frequency voltage applied to the sample stage;
And a power control unit for controlling the first DC power supply and the second DC power source;
Before SL power control unit, if the RF power supplied to the sample stage is modulated time, the first voltage value, said second voltage value and before Symbol high frequency voltage based on the duty ratio of the temporal modulation The time average value of the peak-to-peak voltage value is obtained, and the first time difference is calculated using the potential difference between the preset first DC voltage and the preset second DC voltage, and the obtained time average value . obtains a DC voltage and said second DC voltage, to apply the determined said first DC voltage and the determined and the second DC voltage to each of the first electrode and the second electrode It said first DC power supply and the second DC power supply was controlled to,
The first voltage value is a peak-to-peak voltage value of the high-frequency voltage in a first period of the time-modulated high-frequency power;
The second voltage value is a peak-to-peak voltage value of the high-frequency voltage in a second period of the time-modulated high-frequency power;
The plasma processing apparatus , wherein an amplitude of the first period is larger than an amplitude of the second period .
前記電源制御部は、前記静電吸着膜の絶縁耐圧の上限以上の電圧が前記静電吸着膜に印加されたか否かを判定し、前記絶縁耐圧の上限以上の電圧が前記静電吸着膜に印加されたと判定した回数が予め設定された回数を上回った場合、前記静電吸着膜を交換することを促す警告を出力することを特徴とするプラズマ処理装置。 The plasma processing apparatus according to claim 1,
The power supply controller determines whether a voltage equal to or higher than an upper limit of the dielectric strength of the electrostatic adsorption film is applied to the electrostatic adsorption film, and a voltage equal to or higher than the upper limit of the dielectric strength is applied to the electrostatic adsorption film. If the number was determined that the applied exceeds the number of times that is set Me pre plasma processing system and outputs a warning for prompting the exchange of the electrostatic adsorption film.
前記電源制御部は、前記第１の直流電圧および前記第２の直流電圧に基づいて前記第１の電極と前記試料の間の第１の電位差および前記第２の電極と前記試料の間の第２の電位差を求め、前記求められた前記第１の電位差または前記求められた前記第２の電位差が予め設定された前記絶縁耐圧の上限のしきい値以上の場合、前記絶縁耐圧の上限以上の電圧が前記静電吸着膜に印加されたと判定することを特徴とするプラズマ処理装置。 The plasma processing apparatus according to claim 2 , wherein
The power control unit of the previous SL said first DC voltage and before Symbol first potential difference and the second electrode between the samples before and Symbol first electrode based on the second DC voltage obtains a second potential difference between the sample, the determined said first potential difference or the determined said second potential difference is preset upper limit threshold or more cases of the previous SL withstand voltage, the plasma processing apparatus characterized by determining the upper limit voltage higher than the previous SL withstand voltage is applied to the electrostatic adsorption film.
前記求められた前記第１の直流電圧および前記求められた前記第２の直流電圧は、プラズマ処理中に逐次求められ、The determined first DC voltage and the determined second DC voltage are sequentially determined during plasma processing,
前記電源制御部は、前記逐次求められた前記第１の直流電圧および前記逐次求められた前記第２の直流電圧をそれぞれ前記第１の電極および前記第２の電極に印加するように前記第１の直流電源および前記第２の直流電源をそれぞれ制御することを特徴とするプラズマ処理装置。The power supply control unit applies the first DC voltage obtained sequentially and the second DC voltage obtained sequentially to the first electrode and the second electrode, respectively. The plasma processing apparatus controls the direct current power source and the second direct current power source, respectively.
プラズマを生成するための高周波電力を供給する第１の高周波電源と、
前記試料を静電吸着膜に静電吸着させる電極を具備し前記試料が載置される試料台と、
前記電極に直流電圧を印加する直流電源と、
前記試料台に高周波電力を供給する第２の高周波電源と、
前記試料台に印加された高周波電圧の第１の電圧値および第２の電圧値を検知する電圧検知部と、
前記直流電源を制御する電源制御部と、を備え、
前記電源制御部は、前記試料台に供給される高周波電力が時間変調される場合、前記第１の電圧値、前記第２の電圧値および前記時間変調のデュティ比に基づいて前記高周波電圧のピーク間電圧値の時間平均値を求め、前記求められた時間平均値および予め設定された前記直流電圧を用いて前記直流電圧を求め、前記求められた前記直流電圧を前記電極に印加するように前記直流電源を制御し、
前記第１の電圧値は、前記時間変調された高周波電力の第１の期間における前記高周波電圧のピーク間電圧値であり、
前記第２の電圧値は、前記時間変調された高周波電力の第２の期間における前記高周波電圧のピーク間電圧値であり、
前記第１の期間の振幅は、前記第２の期間の振幅より大きいことを特徴とするプラズマ処理装置。 A processing chamber in which the sample is plasma treated ;
First a high-frequency power source for supplying a high frequency power for generating flop plasma,
A sample stage having an electrode for electrostatically adsorbing the sample to an electrostatic adsorption film and on which the sample is placed;
A DC power supply for applying a DC voltage to the electrodes;
A second high frequency power supply for supplying high frequency power to the sample stage;
A voltage detector for detecting a first voltage value and a second voltage value of the high-frequency voltage applied to the sample stage;
And a power control unit for controlling the DC power supply,
When the high-frequency power supplied to the sample stage is time-modulated, the power supply control unit determines the peak of the high-frequency voltage based on the first voltage value, the second voltage value, and the duty ratio of the time modulation. A time average value of an inter-voltage value is obtained, the DC voltage is obtained using the obtained time average value and the preset DC voltage, and the obtained DC voltage is applied to the electrode. Control the DC power supply,
The first voltage value is a peak-to-peak voltage value of the high-frequency voltage in a first period of the time-modulated high-frequency power;
The second voltage value is a peak-to-peak voltage value of the high-frequency voltage in a second period of the time-modulated high-frequency power;
Before SL amplitude of the first period, the plasma processing apparatus characterized by greater than the amplitude of the second period.
前記求められた直流電圧は、前記試料がプラズマ処理される前に予め求められており、前記プラズマ処理の条件を規定するプラズマ処理条件に前記予め求められた前記直流電圧が設定されていることを特徴とするプラズマ処理装置。 The plasma processing apparatus according to claim 5, wherein
The DC voltage obtained is obtained in advance before the sample is a plasma treatment, said the DC voltage previously obtained in the plasma processing conditions for defining the condition of the plasma processing is set A plasma processing apparatus.
前記求められた直流電圧は、プラズマ処理中に逐次求められ、
前記電源制御部は、前記逐次求められた直流電圧を前記電極に印加するように前記直流電源を制御することを特徴とするプラズマ処理装置。 The plasma processing apparatus according to claim 5, wherein
The DC voltage obtained is Exiled next determined during the plasma treatment,
The said power supply control part controls the said DC power supply so that the said DC voltage calculated | required sequentially may be applied to the said electrode, The plasma processing apparatus characterized by the above-mentioned.
前記高周波電圧のピーク間電圧値の時間平均値は、前記第１の電圧値と前記デュティ比との積に前記第２の電圧値と１から前記デュティ比を減じた値との積を加算して求められた値であることを特徴とするプラズマ処理装置。The time average value of the peak-to-peak voltage value of the high-frequency voltage is obtained by adding the product of the second voltage value and the value obtained by subtracting the duty ratio from 1 to the product of the first voltage value and the duty ratio. A plasma processing apparatus having a value obtained by
前記第１の電極に第１の直流電圧を印加する工程と、
前記第２の電極に第２の直流電圧を印加する工程と、
第１の電圧値、第２の電圧値および前記時間変調のデュティ比に基づいて前記試料台に印加された高周波電圧のピーク間電圧値の時間平均値を求める工程と、
予め設定された前記第１の直流電圧と予め設定された前記第２の直流電圧の電位差および前記求められた時間平均値を用いて前記第１の直流電圧および前記第２の直流電圧を求める工程と、
前記求められた前記第１の直流電圧および前記求められた前記第２の直流電圧をそれぞれ前記第１の電極および前記第２の電極に印加する工程と、を有し、
前記第１の電圧値は、前記時間変調された高周波電力の第１の期間における前記高周波電圧のピーク間電圧値であり、
前記第２の電圧値は、前記時間変調された高周波電力の第２の期間における前記高周波電圧のピーク間電圧値であり、
前記第１の期間の振幅は、前記第２の期間の振幅より大きいことを特徴とするプラズマ処理方法。 Plasma etching is performed on the sample placed on the sample stage while supplying time-modulated high-frequency power to a sample stage having a first electrode and a second electrode for electrostatically adsorbing the sample to the electrostatic adsorption film. In the plasma processing method,
Applying a first DC voltage to the first electrode;
Applying a second DC voltage to the second electrode;
Obtaining a time average value of peak-to-peak voltage values of the high-frequency voltage applied to the sample table based on the first voltage value, the second voltage value, and the duty ratio of the time modulation;
The step of obtaining the first DC voltage and the second DC voltage using the potential difference between the preset first DC voltage and the preset second DC voltage and the obtained time average value. When,
Applying the determined first DC voltage and the determined second DC voltage to the first electrode and the second electrode, respectively.
The first voltage value is a peak-to-peak voltage value of the high-frequency voltage in a first period of the time-modulated high-frequency power;
The second voltage value is a peak-to-peak voltage value of the high-frequency voltage in a second period of the time-modulated high-frequency power;
The plasma processing method according to claim 1, wherein an amplitude of the first period is larger than an amplitude of the second period .
前記求められた前記第１の直流電圧および前記求められた前記第２の直流電圧は、プラズマ処理中に逐次求められ、
前記逐次求められた前記第１の直流電圧および前記逐次求められた前記第２の直流電圧をそれぞれ前記第１の電極および前記第２の電極に印加することを特徴とするプラズマ処理方法。 The plasma processing method according to claim 9, wherein
Said second DC voltage to the determined was obtained the first DC voltage and said successively determined during the plasma treatment,
The plasma processing method, wherein the sequentially obtained first DC voltage and the sequentially obtained second DC voltage are applied to the first electrode and the second electrode, respectively .
前記プラズマエッチングの条件を規定するプラズマ処理条件に設定されるパラメータは、前記第１の直流電圧の初期値と、前記第２の直流電圧の初期値と、前記高周波電圧のピーク間電圧値に対する前記試料台に印加される自己バイアス電圧の比と、前記第１の直流電圧の初期値と前記第２の直流電圧の初期値との電位差と、を含むことを特徴とするプラズマ処理方法。 The plasma processing method according to claim 9 .
Parameter set in the plasma processing conditions defining a condition of the plasma etching, the initial value of the first DC voltage, and the initial value of the second DC voltage, to the peak voltage value before Symbol RF voltage A plasma processing method, comprising: a ratio of self-bias voltages applied to the sample stage; and a potential difference between an initial value of the first DC voltage and an initial value of the second DC voltage .
前記静電吸着膜の絶縁耐圧の上限以上の電圧が前記静電吸着膜に印加されたか否かを判定し、前記絶縁耐圧の上限以上の電圧が前記静電吸着膜に印加されたと判定した回数が予め設定された回数を上回った場合、前記静電吸着膜を交換することを促す警告をすることを特徴とするプラズマ処理方法。 The plasma processing method according to claim 9, wherein
Number of times the upper limit voltage higher than the withstand voltage of the electrostatic adsorption film is determined whether or not applied to the electrostatic adsorption film was determined that the upper limit voltage higher than the withstand voltage is applied to the electrostatic adsorption film When the number of times exceeds a preset number of times , a warning for prompting replacement of the electrostatic adsorption film is issued .
前記第１の直流電圧および前記第２の直流電圧に基づいて前記第１の電極と前記試料の間の第１の電位差および前記第２の電極と前記試料の間の第２の電位差を求め、
前記求められた前記第１の電位差または前記求められた前記第２の電位差が予め設定された前記絶縁耐圧の上限のしきい値以上の場合、前記絶縁耐圧の上限以上の電圧が前記静電吸着膜に印加されたと判定することを特徴とするプラズマ処理方法。 The plasma processing method according to claim 12, wherein
Determining a first potential difference between the first electrode and the sample and a second potential difference between the second electrode and the sample based on the first DC voltage and the second DC voltage;
When the determined first potential difference or the determined second potential difference is greater than or equal to a preset upper threshold of the withstand voltage, a voltage equal to or greater than the upper limit of the withstand voltage is the electrostatic adsorption. A plasma processing method , characterized in that it is determined that the film has been applied .
前記電極に直流電圧を印加する工程と、Applying a DC voltage to the electrodes;
第１の電圧値、第２の電圧値および前記時間変調のデュティ比に基づいて前記試料台に印加された高周波電圧のピーク間電圧値の時間平均値を求める工程と、Obtaining a time average value of peak-to-peak voltage values of the high-frequency voltage applied to the sample table based on the first voltage value, the second voltage value, and the duty ratio of the time modulation;
前記求められた時間平均値および予め設定された前記直流電圧を用いて前記直流電圧を求める工程と、Obtaining the DC voltage using the obtained time average value and the preset DC voltage;
前記求められた前記直流電圧を前記電極に印加する工程と、を有し、Applying the determined DC voltage to the electrode,
前記第１の電圧値は、前記時間変調された高周波電力の第１の期間における前記高周波電圧のピーク間電圧値であり、The first voltage value is a peak-to-peak voltage value of the high-frequency voltage in a first period of the time-modulated high-frequency power;
前記第２の電圧値は、前記時間変調された高周波電力の第２の期間における前記高周波電圧のピーク間電圧値であり、The second voltage value is a peak-to-peak voltage value of the high-frequency voltage in a second period of the time-modulated high-frequency power;
前記第１の期間の振幅は、前記第２の期間の振幅より大きいことを特徴とするプラズマ処理方法。The plasma processing method according to claim 1, wherein an amplitude of the first period is larger than an amplitude of the second period.
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| KR1020150187518A KR101777253B1 (en) | 2015-01-09 | 2015-12-28 | Plasma processing apparatus and plasma processing method |
| TW105100379A TWI604496B (en) | 2015-01-09 | 2016-01-07 | Plasma processing apparatus and plasma processing method |
| US15/671,381 US9887070B2 (en) | 2015-01-09 | 2017-08-08 | Plasma processing apparatus and plasma processing method |
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