JP2018022756A5 - - Google Patents

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Publication number
JP2018022756A5
JP2018022756A5 JP2016152424A JP2016152424A JP2018022756A5 JP 2018022756 A5 JP2018022756 A5 JP 2018022756A5 JP 2016152424 A JP2016152424 A JP 2016152424A JP 2016152424 A JP2016152424 A JP 2016152424A JP 2018022756 A5 JP2018022756 A5 JP 2018022756A5
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JP
Japan
Prior art keywords
sample
frequency power
voltage
plasma
predetermined value
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Application number
JP2016152424A
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English (en)
Japanese (ja)
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JP2018022756A (ja
JP6708358B2 (ja
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Priority claimed from JP2016152424A external-priority patent/JP6708358B2/ja
Priority to JP2016152424A priority Critical patent/JP6708358B2/ja
Application filed filed Critical
Priority to KR1020170004058A priority patent/KR101883246B1/ko
Priority to TW106102962A priority patent/TWI660422B/zh
Priority to US15/425,155 priority patent/US10825700B2/en
Publication of JP2018022756A publication Critical patent/JP2018022756A/ja
Publication of JP2018022756A5 publication Critical patent/JP2018022756A5/ja
Publication of JP6708358B2 publication Critical patent/JP6708358B2/ja
Application granted granted Critical
Priority to US17/038,072 priority patent/US12148633B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2016152424A 2016-08-03 2016-08-03 プラズマ処理装置及び試料の離脱方法 Active JP6708358B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2016152424A JP6708358B2 (ja) 2016-08-03 2016-08-03 プラズマ処理装置及び試料の離脱方法
KR1020170004058A KR101883246B1 (ko) 2016-08-03 2017-01-11 플라스마 처리 장치 및 시료의 이탈 방법
TW106102962A TWI660422B (zh) 2016-08-03 2017-01-25 電漿處理裝置及樣品之脫離方法
US15/425,155 US10825700B2 (en) 2016-08-03 2017-02-06 Plasma processing apparatus and method for releasing sample
US17/038,072 US12148633B2 (en) 2016-08-03 2020-09-30 Plasma processing apparatus and method for releasing sample

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016152424A JP6708358B2 (ja) 2016-08-03 2016-08-03 プラズマ処理装置及び試料の離脱方法

Publications (3)

Publication Number Publication Date
JP2018022756A JP2018022756A (ja) 2018-02-08
JP2018022756A5 true JP2018022756A5 (enExample) 2018-11-22
JP6708358B2 JP6708358B2 (ja) 2020-06-10

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ID=61072045

Family Applications (1)

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JP2016152424A Active JP6708358B2 (ja) 2016-08-03 2016-08-03 プラズマ処理装置及び試料の離脱方法

Country Status (4)

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US (2) US10825700B2 (enExample)
JP (1) JP6708358B2 (enExample)
KR (1) KR101883246B1 (enExample)
TW (1) TWI660422B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7059064B2 (ja) * 2018-03-26 2022-04-25 株式会社日立ハイテク プラズマ処理装置
CN112885691B (zh) * 2019-11-29 2024-05-14 中微半导体设备(上海)股份有限公司 等离子体处理装置及其稳定性优化的方法
JP7526645B2 (ja) 2020-01-29 2024-08-01 東京エレクトロン株式会社 基板処理方法及び基板処理システム
WO2022180723A1 (ja) * 2021-02-25 2022-09-01 株式会社日立ハイテク プラズマ処理装置
CN115020311B (zh) * 2022-05-27 2025-12-09 江苏鲁汶仪器股份有限公司 一种残余电荷释放方法
US20250038033A1 (en) * 2022-08-03 2025-01-30 Hitachi High-Tech Corporation Semiconductor wafer processing method

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW334609B (en) 1996-09-19 1998-06-21 Hitachi Ltd Electrostatic chuck, method and device for processing sanyle use the same
KR19980024679U (ko) * 1996-10-30 1998-07-25 홍성기 광고용 녹화 카셋테이프
US5933314A (en) * 1997-06-27 1999-08-03 Lam Research Corp. Method and an apparatus for offsetting plasma bias voltage in bi-polar electro-static chucks
JPH11111826A (ja) * 1997-10-02 1999-04-23 Sumitomo Metal Ind Ltd 静電チャックにおける試料の脱離方法
JPH11233605A (ja) * 1998-02-17 1999-08-27 Mitsubishi Electric Corp 静電チャックステージ
GB9812850D0 (en) * 1998-06-16 1998-08-12 Surface Tech Sys Ltd A method and apparatus for dechucking
US6057244A (en) * 1998-07-31 2000-05-02 Applied Materials, Inc. Method for improved sputter etch processing
US20030236004A1 (en) * 2002-06-24 2003-12-25 Applied Materials, Inc. Dechucking with N2/O2 plasma
JP2004047511A (ja) * 2002-07-08 2004-02-12 Tokyo Electron Ltd 離脱方法、処理方法、静電吸着装置および処理装置
US7292428B2 (en) * 2005-04-26 2007-11-06 Applied Materials, Inc. Electrostatic chuck with smart lift-pin mechanism for a plasma reactor
JP2007073568A (ja) * 2005-09-05 2007-03-22 Hitachi High-Technologies Corp プラズマ処理装置
WO2008052388A1 (en) * 2006-10-31 2008-05-08 Byd Company Limited Control method of electromotor
JP4847909B2 (ja) * 2007-03-29 2011-12-28 東京エレクトロン株式会社 プラズマ処理方法及び装置
TWI460439B (zh) * 2008-07-07 2014-11-11 Lam Res Corp 用來辨識電漿處理系統之處理腔室內的解除吸附情形之信號擾動特性的方法及裝置、及其電腦可讀儲存媒體
JP6013740B2 (ja) 2012-02-03 2016-10-25 東京エレクトロン株式会社 離脱制御方法及びプラズマ処理装置の制御装置
JP6132497B2 (ja) * 2012-09-12 2017-05-24 東京エレクトロン株式会社 離脱制御方法及びプラズマ処理装置
JP2015072825A (ja) * 2013-10-03 2015-04-16 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP6357436B2 (ja) 2014-07-25 2018-07-11 株式会社日立ハイテクノロジーズ プラズマ処理装置
US10535566B2 (en) * 2016-04-28 2020-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufacture

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