JP2019057547A5 - - Google Patents

Download PDF

Info

Publication number
JP2019057547A5
JP2019057547A5 JP2017179665A JP2017179665A JP2019057547A5 JP 2019057547 A5 JP2019057547 A5 JP 2019057547A5 JP 2017179665 A JP2017179665 A JP 2017179665A JP 2017179665 A JP2017179665 A JP 2017179665A JP 2019057547 A5 JP2019057547 A5 JP 2019057547A5
Authority
JP
Japan
Prior art keywords
frequency power
high frequency
electrode
phase
sample
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2017179665A
Other languages
English (en)
Japanese (ja)
Other versions
JP6703508B2 (ja
JP2019057547A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2017179665A external-priority patent/JP6703508B2/ja
Priority to JP2017179665A priority Critical patent/JP6703508B2/ja
Priority to CN201711453386.1A priority patent/CN109524288B/zh
Priority to KR1020170180657A priority patent/KR102042576B1/ko
Priority to TW107103016A priority patent/TWI703632B/zh
Priority to US15/919,682 priority patent/US10699884B2/en
Publication of JP2019057547A publication Critical patent/JP2019057547A/ja
Publication of JP2019057547A5 publication Critical patent/JP2019057547A5/ja
Priority to US16/876,514 priority patent/US11094512B2/en
Publication of JP6703508B2 publication Critical patent/JP6703508B2/ja
Application granted granted Critical
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2017179665A 2017-09-20 2017-09-20 プラズマ処理装置及びプラズマ処理方法 Active JP6703508B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2017179665A JP6703508B2 (ja) 2017-09-20 2017-09-20 プラズマ処理装置及びプラズマ処理方法
CN201711453386.1A CN109524288B (zh) 2017-09-20 2017-12-27 等离子体处理装置以及等离子体处理方法
KR1020170180657A KR102042576B1 (ko) 2017-09-20 2017-12-27 플라즈마 처리 장치 및 플라즈마 처리 방법
TW107103016A TWI703632B (zh) 2017-09-20 2018-01-29 電漿處理裝置及電漿處理方法
US15/919,682 US10699884B2 (en) 2017-09-20 2018-03-13 Plasma processing apparatus and plasma processing method
US16/876,514 US11094512B2 (en) 2017-09-20 2020-05-18 Plasma processing apparatus and plasma processing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017179665A JP6703508B2 (ja) 2017-09-20 2017-09-20 プラズマ処理装置及びプラズマ処理方法

Publications (3)

Publication Number Publication Date
JP2019057547A JP2019057547A (ja) 2019-04-11
JP2019057547A5 true JP2019057547A5 (enExample) 2019-06-27
JP6703508B2 JP6703508B2 (ja) 2020-06-03

Family

ID=65721131

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017179665A Active JP6703508B2 (ja) 2017-09-20 2017-09-20 プラズマ処理装置及びプラズマ処理方法

Country Status (5)

Country Link
US (2) US10699884B2 (enExample)
JP (1) JP6703508B2 (enExample)
KR (1) KR102042576B1 (enExample)
CN (1) CN109524288B (enExample)
TW (1) TWI703632B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11721526B2 (en) * 2019-05-31 2023-08-08 Mks Instruments, Inc. System and method of power generation with phase linked solid-state generator modules
US11387110B2 (en) * 2019-06-20 2022-07-12 Hitachi High-Tech Corporation Plasma processing apparatus and plasma processing method
KR102400376B1 (ko) 2019-07-04 2022-05-23 주식회사 히타치하이테크 삼차원 형상 검출 장치, 방법, 및 플라스마 처리 장치
US11424105B2 (en) * 2019-08-05 2022-08-23 Hitachi High-Tech Corporation Plasma processing apparatus
CN115485809A (zh) * 2020-03-04 2022-12-16 朗姆研究公司 使可调谐边缘鞘系统中的反射功率最小化
WO2022004209A1 (ja) * 2020-06-29 2022-01-06 住友大阪セメント株式会社 静電チャック
US20240055228A1 (en) * 2022-08-10 2024-02-15 Mks Instruments, Inc. Plasma Process Control of Multi-Electrode Systems Equipped with Ion Energy Sensors

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04271122A (ja) * 1991-02-27 1992-09-28 Fuji Electric Co Ltd プラズマ処理装置
JP3368743B2 (ja) * 1996-03-19 2003-01-20 株式会社日立製作所 プラズマ処理装置及びプラズマ処理方法
JP2002141340A (ja) * 2000-08-25 2002-05-17 Hitachi Ltd プラズマ処理装置及びプラズマ処理方法
US6819052B2 (en) * 2002-05-31 2004-11-16 Nagano Japan Radio Co., Ltd. Coaxial type impedance matching device and impedance detecting method for plasma generation
JP2004022822A (ja) * 2002-06-17 2004-01-22 Shibaura Mechatronics Corp プラズマ処理方法および装置
JP2005071872A (ja) * 2003-08-26 2005-03-17 Noda Rf Technologies:Kk 高周波電源装置および高周波電力供給方法
JP2007041769A (ja) * 2005-08-02 2007-02-15 Nec Tokin Corp Ｉｃカード用アンテナコイルの形成治具、およびｉｃカード用アンテナコイルの製造方法
JP2007067037A (ja) * 2005-08-30 2007-03-15 Hitachi High-Technologies Corp 真空処理装置
JP2008027816A (ja) * 2006-07-24 2008-02-07 Canon Inc プラズマ処理装置及びプラズマ処理方法
WO2008120946A1 (en) * 2007-04-02 2008-10-09 Sosul Co., Ltd. Apparatus for supporting substrate and plasma etching apparatus having the same
US20090297404A1 (en) * 2008-05-29 2009-12-03 Applied Materials, Inc. Plasma reactor with high speed plasma impedance tuning by modulation of source power or bias power
US20100018648A1 (en) * 2008-07-23 2010-01-28 Applied Marterials, Inc. Workpiece support for a plasma reactor with controlled apportionment of rf power to a process kit ring
JP5419666B2 (ja) * 2009-06-12 2014-02-19 三菱重工業株式会社 基板処理装置
JP2011228436A (ja) 2010-04-19 2011-11-10 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
JP5800547B2 (ja) * 2011-03-29 2015-10-28 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP6207880B2 (ja) * 2012-09-26 2017-10-04 東芝メモリ株式会社 プラズマ処理装置およびプラズマ処理方法
US9082589B2 (en) * 2012-10-09 2015-07-14 Novellus Systems, Inc. Hybrid impedance matching for inductively coupled plasma system
CN104871430B (zh) * 2012-12-18 2018-01-12 通快许廷格两合公司 用于产生高频功率的方法和具有用于给负载供送功率的功率转换器的功率供送系统
JP6357436B2 (ja) * 2014-07-25 2018-07-11 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP6536082B2 (ja) * 2015-02-26 2019-07-03 コニカミノルタ株式会社 電気機器用オプション装置及び画像形成装置
JP6488150B2 (ja) * 2015-02-27 2019-03-20 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP6539113B2 (ja) * 2015-05-28 2019-07-03 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
US10153139B2 (en) * 2015-06-17 2018-12-11 Applied Materials, Inc. Multiple electrode substrate support assembly and phase control system

Similar Documents

Publication Publication Date Title
JP2019057547A5 (enExample)
JP2016092342A5 (enExample)
JP2016115819A5 (enExample)
JP2014179576A5 (ja) プラズマ処理装置の制御方法、プラズマ処理方法及びプラズマ処理装置
JP2014107363A5 (enExample)
JP2020004710A5 (enExample)
KR102375578B1 (ko) 플라즈마 처리 장치의 임피던스 정합을 위한 방법
JP2020017565A5 (enExample)
JP2019004027A5 (enExample)
JP2016032096A5 (enExample)
JP2007250755A5 (enExample)
EP4376061A3 (en) Spatial and temporal control of ion bias voltage for plasma processing
CO2021014911A2 (es) Métodos y dispositivos para el tratamiento estético de estructuras biológicas mediante radiofrecuencia y energía magnética
JP2006210726A5 (enExample)
TW200612488A (en) Plasma processing apparatus, method thereof, and computer readable memory medium
MY175365A (en) Apparatus and method to electrically power an electric arc furnace
SG10201804881QA (en) Plasma processing apparatus and plasma processing method
WO2015011536A3 (en) System and method of controlling heat input in tandem hot-wire applications
WO2015011537A3 (en) System and method of controlling heat input in tandem hot-wire applications
JP2016213358A5 (enExample)
WO2015011535A3 (en) System and method of controlling heat input in tandem hot-wire applications
MX381571B (es) Sistemas, métodos y aparato para precalentar alambre de soldadura.
EP4421844A3 (en) Plasma treatment device, plasma treatment method, program, and memory medium
JP2015095396A5 (enExample)
EP3147931A3 (en) Mounting table and plasma processing apparatus