JP2014107363A5 - - Google Patents

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Publication number
JP2014107363A5
JP2014107363A5 JP2012258086A JP2012258086A JP2014107363A5 JP 2014107363 A5 JP2014107363 A5 JP 2014107363A5 JP 2012258086 A JP2012258086 A JP 2012258086A JP 2012258086 A JP2012258086 A JP 2012258086A JP 2014107363 A5 JP2014107363 A5 JP 2014107363A5
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JP
Japan
Prior art keywords
pulse
frequency
plasma processing
period
frequency power
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JP2012258086A
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English (en)
Japanese (ja)
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JP6002556B2 (ja
JP2014107363A (ja
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Priority claimed from JP2012258086A external-priority patent/JP6002556B2/ja
Priority to JP2012258086A priority Critical patent/JP6002556B2/ja
Application filed filed Critical
Priority to TW101148068A priority patent/TWI508168B/zh
Priority to KR1020130007790A priority patent/KR101425307B1/ko
Priority to US13/749,784 priority patent/US8992724B2/en
Publication of JP2014107363A publication Critical patent/JP2014107363A/ja
Priority to US14/609,807 priority patent/US9502217B2/en
Publication of JP2014107363A5 publication Critical patent/JP2014107363A5/ja
Publication of JP6002556B2 publication Critical patent/JP6002556B2/ja
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JP2012258086A 2012-11-27 2012-11-27 プラズマ処理装置およびプラズマ処理方法 Active JP6002556B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2012258086A JP6002556B2 (ja) 2012-11-27 2012-11-27 プラズマ処理装置およびプラズマ処理方法
TW101148068A TWI508168B (zh) 2012-11-27 2012-12-18 Plasma processing device and plasma processing method
KR1020130007790A KR101425307B1 (ko) 2012-11-27 2013-01-24 플라즈마 처리 장치 및 플라즈마 처리 방법
US13/749,784 US8992724B2 (en) 2012-11-27 2013-01-25 Plasma processing apparatus and plasma processing method
US14/609,807 US9502217B2 (en) 2012-11-27 2015-01-30 Plasma processing apparatus and plasma processing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012258086A JP6002556B2 (ja) 2012-11-27 2012-11-27 プラズマ処理装置およびプラズマ処理方法

Publications (3)

Publication Number Publication Date
JP2014107363A JP2014107363A (ja) 2014-06-09
JP2014107363A5 true JP2014107363A5 (enExample) 2015-08-13
JP6002556B2 JP6002556B2 (ja) 2016-10-05

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JP2012258086A Active JP6002556B2 (ja) 2012-11-27 2012-11-27 プラズマ処理装置およびプラズマ処理方法

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US (2) US8992724B2 (enExample)
JP (1) JP6002556B2 (enExample)
KR (1) KR101425307B1 (enExample)
TW (1) TWI508168B (enExample)

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US10153133B2 (en) 2015-03-23 2018-12-11 Applied Materials, Inc. Plasma reactor having digital control over rotation frequency of a microwave field with direct up-conversion
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CN107295739A (zh) * 2016-04-12 2017-10-24 北京北方华创微电子装备有限公司 产生脉冲等离子体的方法及其等离子体设备
US10340123B2 (en) * 2016-05-26 2019-07-02 Tokyo Electron Limited Multi-frequency power modulation for etching high aspect ratio features
CN107172818B (zh) * 2017-07-12 2023-06-16 信丰迅捷兴电路科技有限公司 一种全自动的蚀刻装置及其控制方法
KR102435263B1 (ko) * 2017-07-25 2022-08-23 삼성전자주식회사 플라즈마 처리 장치 및 방법, 및 이를 이용한 반도체 장치의 제조 방법
US11437221B2 (en) 2017-11-17 2022-09-06 Advanced Energy Industries, Inc. Spatial monitoring and control of plasma processing environments
US12230476B2 (en) 2017-11-17 2025-02-18 Advanced Energy Industries, Inc. Integrated control of a plasma processing system
JP2021503702A (ja) 2017-11-17 2021-02-12 エーイーエス グローバル ホールディングス， プライベート リミテッド プラズマ処理システムにおける変調供給源の改良された印加
US12505986B2 (en) 2017-11-17 2025-12-23 Advanced Energy Industries, Inc. Synchronization of plasma processing components
CN111868873B (zh) 2017-11-17 2023-06-16 先进工程解决方案全球控股私人有限公司 等离子体处理源和衬底偏置的同步的脉冲化
JP6792754B2 (ja) * 2018-11-14 2020-12-02 株式会社エスイー プラズマを用いた処理装置及び処理対象物にプラズマを照射する処理を行う処理方法
KR102743927B1 (ko) 2019-01-10 2024-12-17 삼성전자주식회사 플라즈마 균일성 제어 방법 및 플라즈마 프로세싱 시스템
US10593518B1 (en) * 2019-02-08 2020-03-17 Applied Materials, Inc. Methods and apparatus for etching semiconductor structures
CN111916327B (zh) * 2019-05-10 2023-04-28 中微半导体设备(上海)股份有限公司 多频率多阶段的等离子体射频输出的方法及其装置
WO2021011450A1 (en) 2019-07-12 2021-01-21 Advanced Energy Industries, Inc. Bias supply with a single controlled switch
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US12217972B2 (en) * 2019-12-13 2025-02-04 Lam Research Corporation Multi-state pulsing for achieving a balance between bow control and mask selectivity
JP7511423B2 (ja) * 2019-12-17 2024-07-05 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理方法、及び電源システム
US12125674B2 (en) 2020-05-11 2024-10-22 Advanced Energy Industries, Inc. Surface charge and power feedback and control using a switch mode bias system
WO2021257331A1 (en) * 2020-06-15 2021-12-23 Lam Research Corporation Control of pulsing frequencies and duty cycles of parameters of rf signals
TWI902936B (zh) * 2020-10-28 2025-11-01 日商東京威力科創股份有限公司 電漿處理裝置
CN117397014A (zh) * 2021-06-08 2024-01-12 东京毅力科创株式会社 等离子体处理装置和等离子体处理方法
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JP6002556B2 (ja) * 2012-11-27 2016-10-05 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法

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