JP2013526004A5 - - Google Patents

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Publication number
JP2013526004A5
JP2013526004A5 JP2012556449A JP2012556449A JP2013526004A5 JP 2013526004 A5 JP2013526004 A5 JP 2013526004A5 JP 2012556449 A JP2012556449 A JP 2012556449A JP 2012556449 A JP2012556449 A JP 2012556449A JP 2013526004 A5 JP2013526004 A5 JP 2013526004A5
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JP
Japan
Prior art keywords
voltage
stage
electrodes
pair
contaminant particles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2012556449A
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English (en)
Japanese (ja)
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JP2013526004A (ja
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Publication date
Application filed filed Critical
Priority claimed from PCT/EP2011/053171 external-priority patent/WO2011110467A2/en
Publication of JP2013526004A publication Critical patent/JP2013526004A/ja
Publication of JP2013526004A5 publication Critical patent/JP2013526004A5/ja
Withdrawn legal-status Critical Current

Links

JP2012556449A 2010-03-12 2011-03-03 汚染粒子を除去するシステム、リソグラフィ装置、汚染粒子を除去する方法、及びデバイス製造方法 Withdrawn JP2013526004A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US31350710P 2010-03-12 2010-03-12
US61/313,507 2010-03-12
US34852110P 2010-05-26 2010-05-26
US61/348,521 2010-05-26
PCT/EP2011/053171 WO2011110467A2 (en) 2010-03-12 2011-03-03 System for removing contaminant particles, lithographic apparatus, method for removing contaminant particles and method for manufacturing a device

Publications (2)

Publication Number Publication Date
JP2013526004A JP2013526004A (ja) 2013-06-20
JP2013526004A5 true JP2013526004A5 (enExample) 2014-04-17

Family

ID=44544069

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012556449A Withdrawn JP2013526004A (ja) 2010-03-12 2011-03-03 汚染粒子を除去するシステム、リソグラフィ装置、汚染粒子を除去する方法、及びデバイス製造方法

Country Status (6)

Country Link
US (1) US20130070218A1 (enExample)
JP (1) JP2013526004A (enExample)
KR (1) KR20130054945A (enExample)
CN (1) CN102918461A (enExample)
TW (1) TW201214060A (enExample)
WO (1) WO2011110467A2 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130235357A1 (en) * 2012-03-12 2013-09-12 Kla-Tencor Corporation System and Method for Particle Control Near A Reticle
US20140253887A1 (en) * 2013-03-07 2014-09-11 Applied Materials, Inc. Contamination prevention for photomask in extreme ultraviolet lithography application
EP3032334B1 (en) * 2014-12-08 2017-10-18 Agfa Graphics Nv A system for reducing ablation debris
WO2016079607A1 (en) * 2015-06-24 2016-05-26 Alvarado Castañeda Diego Arturo Method and apparatus for maintaining the surface of a reticle free of particles
DE102015215223A1 (de) 2015-08-10 2017-02-16 Carl Zeiss Smt Gmbh EUV-Lithographiesystem
RU2623400C1 (ru) * 2015-12-24 2017-06-26 Федеральное государственное бюджетное учреждение науки Физико-технический институт им. А.Ф. Иоффе Российской академии наук Способ защиты литографического оборудования от пылевых металлических частиц
DE102016208850A1 (de) * 2016-05-23 2017-12-07 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage für die Halbleiterlithographie mit Elementen zur Plasmakonditionierung
US10149375B2 (en) * 2016-09-14 2018-12-04 Asml Netherlands B.V. Target trajectory metrology in an extreme ultraviolet light source
KR102670404B1 (ko) * 2017-07-28 2024-05-30 에이에스엠엘 네델란즈 비.브이. 입자 억제를 위한 입자 트랩 및 방벽
KR20210093263A (ko) * 2018-11-27 2021-07-27 에이에스엠엘 네델란즈 비.브이. 멤브레인 세정 장치
KR102714101B1 (ko) 2018-12-10 2024-10-04 어플라이드 머티어리얼스, 인코포레이티드 극자외선 리소그래피 애플리케이션에서 포토마스크로부터의 부착 피처 제거
CN115176202A (zh) 2020-01-23 2022-10-11 Asml控股股份有限公司 配有用于改变颗粒碎片的轨迹的偏转设备的光刻系统
DE102020208568A1 (de) 2020-07-08 2022-01-13 Carl Zeiss Smt Gmbh Vorrichtung und Verfahren zum Entfernen eines einzelnen Partikels von einem Substrat
CN119317867A (zh) * 2022-05-11 2025-01-14 Asml荷兰有限公司 光刻设备及相关方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL1008352C2 (nl) 1998-02-19 1999-08-20 Stichting Tech Wetenschapp Inrichting, geschikt voor extreem ultraviolet lithografie, omvattende een stralingsbron en een verwerkingsorgaan voor het verwerken van de van de stralingsbron afkomstige straling, alsmede een filter voor het onderdrukken van ongewenste atomaire en microscopische deeltjes welke door een stralingsbron zijn uitgezonden.
DE60118669T2 (de) * 2000-08-25 2007-01-11 Asml Netherlands B.V. Lithographischer Projektionsapparat
US6614505B2 (en) * 2001-01-10 2003-09-02 Asml Netherlands B.V. Lithographic projection apparatus, device manufacturing method, and device manufactured thereby
EP1223468B1 (en) * 2001-01-10 2008-07-02 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
TWI255394B (en) * 2002-12-23 2006-05-21 Asml Netherlands Bv Lithographic apparatus with debris suppression means and device manufacturing method
US7230258B2 (en) * 2003-07-24 2007-06-12 Intel Corporation Plasma-based debris mitigation for extreme ultraviolet (EUV) light source
EP1726993A1 (de) * 2005-05-24 2006-11-29 Carl Zeiss SMT AG Optisches System und Verfahren zum Betreiben desselben
JP5758153B2 (ja) * 2010-03-12 2015-08-05 エーエスエムエル ネザーランズ ビー．ブイ． 放射源装置、リソグラフィ装置、放射発生および送出方法、およびデバイス製造方法

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