TW201214060A - System for removing contaminant particles, lithographic apparatus, method for removing contaminant particles and method for manufacturing a device - Google Patents
System for removing contaminant particles, lithographic apparatus, method for removing contaminant particles and method for manufacturing a device Download PDFInfo
- Publication number
- TW201214060A TW201214060A TW100108400A TW100108400A TW201214060A TW 201214060 A TW201214060 A TW 201214060A TW 100108400 A TW100108400 A TW 100108400A TW 100108400 A TW100108400 A TW 100108400A TW 201214060 A TW201214060 A TW 201214060A
- Authority
- TW
- Taiwan
- Prior art keywords
- voltage
- electrodes
- pair
- stage
- contaminating particles
- Prior art date
Links
- 239000002245 particle Substances 0.000 title claims abstract description 101
- 239000000356 contaminant Substances 0.000 title claims abstract description 24
- 238000000034 method Methods 0.000 title claims description 16
- 238000004519 manufacturing process Methods 0.000 title description 8
- 230000005855 radiation Effects 0.000 claims abstract description 111
- 239000000758 substrate Substances 0.000 claims description 39
- 238000001459 lithography Methods 0.000 claims description 27
- 238000005286 illumination Methods 0.000 claims description 11
- 230000005611 electricity Effects 0.000 claims description 3
- 239000000428 dust Substances 0.000 claims description 2
- 210000002381 plasma Anatomy 0.000 claims 3
- 239000001257 hydrogen Substances 0.000 description 23
- 229910052739 hydrogen Inorganic materials 0.000 description 23
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 21
- 230000003287 optical effect Effects 0.000 description 17
- 239000007789 gas Substances 0.000 description 16
- 239000000463 material Substances 0.000 description 13
- 230000004888 barrier function Effects 0.000 description 11
- 230000000694 effects Effects 0.000 description 8
- 239000000446 fuel Substances 0.000 description 8
- 238000009304 pastoral farming Methods 0.000 description 7
- 230000003595 spectral effect Effects 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- 229910052718 tin Inorganic materials 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 238000000059 patterning Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000004590 computer program Methods 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000011859 microparticle Substances 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- 210000001747 pupil Anatomy 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- -1 Li vapor Substances 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
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- 238000013500 data storage Methods 0.000 description 1
- 230000009849 deactivation Effects 0.000 description 1
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- 230000009977 dual effect Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 230000005686 electrostatic field Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 210000003128 head Anatomy 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000005469 synchrotron radiation Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 210000003813 thumb Anatomy 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
- G03F7/2026—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—Production of X-ray radiation generated from plasma
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Environmental & Geological Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Cleaning In General (AREA)
- X-Ray Techniques (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US31350710P | 2010-03-12 | 2010-03-12 | |
| US34852110P | 2010-05-26 | 2010-05-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201214060A true TW201214060A (en) | 2012-04-01 |
Family
ID=44544069
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100108400A TW201214060A (en) | 2010-03-12 | 2011-03-11 | System for removing contaminant particles, lithographic apparatus, method for removing contaminant particles and method for manufacturing a device |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20130070218A1 (enExample) |
| JP (1) | JP2013526004A (enExample) |
| KR (1) | KR20130054945A (enExample) |
| CN (1) | CN102918461A (enExample) |
| TW (1) | TW201214060A (enExample) |
| WO (1) | WO2011110467A2 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI753013B (zh) * | 2016-09-14 | 2022-01-21 | 荷蘭商Ａｍｓｌ荷蘭公司 | 量測目標之移動屬性的方法及光學設備 |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130235357A1 (en) * | 2012-03-12 | 2013-09-12 | Kla-Tencor Corporation | System and Method for Particle Control Near A Reticle |
| US20140253887A1 (en) * | 2013-03-07 | 2014-09-11 | Applied Materials, Inc. | Contamination prevention for photomask in extreme ultraviolet lithography application |
| ES2655798T3 (es) * | 2014-12-08 | 2018-02-21 | Agfa Nv | Sistema para reducir los residuos de ablación |
| US10678149B2 (en) | 2015-06-24 | 2020-06-09 | Diego Arturo Alvarado Castañeda | Method and apparatus for maintaining the surface of a reticle free of particles |
| DE102015215223A1 (de) | 2015-08-10 | 2017-02-16 | Carl Zeiss Smt Gmbh | EUV-Lithographiesystem |
| RU2623400C1 (ru) * | 2015-12-24 | 2017-06-26 | Федеральное государственное бюджетное учреждение науки Физико-технический институт им. А.Ф. Иоффе Российской академии наук | Способ защиты литографического оборудования от пылевых металлических частиц |
| DE102016208850A1 (de) * | 2016-05-23 | 2017-12-07 | Carl Zeiss Smt Gmbh | Projektionsbelichtungsanlage für die Halbleiterlithographie mit Elementen zur Plasmakonditionierung |
| KR102670404B1 (ko) * | 2017-07-28 | 2024-05-30 | 에이에스엠엘 네델란즈 비.브이. | 입자 억제를 위한 입자 트랩 및 방벽 |
| NL2024289B1 (en) * | 2018-11-27 | 2020-09-25 | Asml Netherlands Bv | Membrane cleaning apparatus |
| CN113169047B (zh) | 2018-12-10 | 2024-09-10 | 应用材料公司 | 在极紫外线光刻应用中从光掩模去除附接特征 |
| IL294398A (en) * | 2020-01-23 | 2022-08-01 | Asml Holding Nv | A lithographic system provided with a deflection mechanism to change the trajectory of particulate debris |
| DE102020208568A1 (de) * | 2020-07-08 | 2022-01-13 | Carl Zeiss Smt Gmbh | Vorrichtung und Verfahren zum Entfernen eines einzelnen Partikels von einem Substrat |
| WO2023217495A1 (en) * | 2022-05-11 | 2023-11-16 | Asml Netherlands B.V. | Lithographic apparatus and associated methods |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL1008352C2 (nl) | 1998-02-19 | 1999-08-20 | Stichting Tech Wetenschapp | Inrichting, geschikt voor extreem ultraviolet lithografie, omvattende een stralingsbron en een verwerkingsorgaan voor het verwerken van de van de stralingsbron afkomstige straling, alsmede een filter voor het onderdrukken van ongewenste atomaire en microscopische deeltjes welke door een stralingsbron zijn uitgezonden. |
| US6781673B2 (en) | 2000-08-25 | 2004-08-24 | Asml Netherlands B.V. | Mask handling apparatus, lithographic projection apparatus, device manufacturing method and device manufactured thereby |
| EP1223468B1 (en) * | 2001-01-10 | 2008-07-02 | ASML Netherlands B.V. | Lithographic projection apparatus and device manufacturing method |
| US6614505B2 (en) * | 2001-01-10 | 2003-09-02 | Asml Netherlands B.V. | Lithographic projection apparatus, device manufacturing method, and device manufactured thereby |
| TWI255394B (en) * | 2002-12-23 | 2006-05-21 | Asml Netherlands Bv | Lithographic apparatus with debris suppression means and device manufacturing method |
| US7230258B2 (en) * | 2003-07-24 | 2007-06-12 | Intel Corporation | Plasma-based debris mitigation for extreme ultraviolet (EUV) light source |
| EP1726993A1 (de) * | 2005-05-24 | 2006-11-29 | Carl Zeiss SMT AG | Optisches System und Verfahren zum Betreiben desselben |
| JP5758153B2 (ja) * | 2010-03-12 | 2015-08-05 | エーエスエムエル ネザーランズ ビー．ブイ． | 放射源装置、リソグラフィ装置、放射発生および送出方法、およびデバイス製造方法 |
-
2011
- 2011-03-03 CN CN2011800133737A patent/CN102918461A/zh active Pending
- 2011-03-03 JP JP2012556449A patent/JP2013526004A/ja not_active Withdrawn
- 2011-03-03 US US13/580,364 patent/US20130070218A1/en not_active Abandoned
- 2011-03-03 WO PCT/EP2011/053171 patent/WO2011110467A2/en not_active Ceased
- 2011-03-03 KR KR1020127026672A patent/KR20130054945A/ko not_active Withdrawn
- 2011-03-11 TW TW100108400A patent/TW201214060A/zh unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI753013B (zh) * | 2016-09-14 | 2022-01-21 | 荷蘭商Ａｍｓｌ荷蘭公司 | 量測目標之移動屬性的方法及光學設備 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102918461A (zh) | 2013-02-06 |
| JP2013526004A (ja) | 2013-06-20 |
| KR20130054945A (ko) | 2013-05-27 |
| WO2011110467A2 (en) | 2011-09-15 |
| US20130070218A1 (en) | 2013-03-21 |
| WO2011110467A3 (en) | 2011-11-24 |
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