CN102918461A - 用于去除污染物粒子的系统、光刻设备、用于去除污染物粒子的方法以及用于制造器件的方法 - Google Patents
用于去除污染物粒子的系统、光刻设备、用于去除污染物粒子的方法以及用于制造器件的方法 Download PDFInfo
- Publication number
- CN102918461A CN102918461A CN2011800133737A CN201180013373A CN102918461A CN 102918461 A CN102918461 A CN 102918461A CN 2011800133737 A CN2011800133737 A CN 2011800133737A CN 201180013373 A CN201180013373 A CN 201180013373A CN 102918461 A CN102918461 A CN 102918461A
- Authority
- CN
- China
- Prior art keywords
- voltage
- contaminant particles
- electrode
- pair
- phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002245 particle Substances 0.000 title claims abstract description 104
- 239000000356 contaminant Substances 0.000 title claims abstract description 95
- 238000000034 method Methods 0.000 title claims description 19
- 238000004519 manufacturing process Methods 0.000 title description 7
- 230000005855 radiation Effects 0.000 claims abstract description 126
- 230000007246 mechanism Effects 0.000 claims description 59
- 238000000059 patterning Methods 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 34
- 230000003287 optical effect Effects 0.000 description 32
- 239000001257 hydrogen Substances 0.000 description 27
- 229910052739 hydrogen Inorganic materials 0.000 description 27
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 25
- 239000007789 gas Substances 0.000 description 14
- 239000000463 material Substances 0.000 description 13
- 238000010276 construction Methods 0.000 description 12
- 230000004888 barrier function Effects 0.000 description 11
- 239000000446 fuel Substances 0.000 description 9
- 229910052718 tin Inorganic materials 0.000 description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 238000003860 storage Methods 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 6
- 230000003068 static effect Effects 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 210000001747 pupil Anatomy 0.000 description 4
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000005670 electromagnetic radiation Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052744 lithium Inorganic materials 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 229910052724 xenon Inorganic materials 0.000 description 3
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000004087 circulation Effects 0.000 description 2
- 238000004590 computer program Methods 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 239000003344 environmental pollutant Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000002045 lasting effect Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 231100000719 pollutant Toxicity 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000007385 chemical modification Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000012940 design transfer Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005686 electrostatic field Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 210000003128 head Anatomy 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 230000005055 memory storage Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
- G03F7/2026—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—Production of X-ray radiation generated from plasma
Landscapes
- Atmospheric Sciences (AREA)
- Engineering & Computer Science (AREA)
- Public Health (AREA)
- Physics & Mathematics (AREA)
- Epidemiology (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- Environmental & Geological Engineering (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Cleaning In General (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- X-Ray Techniques (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US31350710P | 2010-03-12 | 2010-03-12 | |
| US61/313,507 | 2010-03-12 | ||
| US34852110P | 2010-05-26 | 2010-05-26 | |
| US61/348,521 | 2010-05-26 | ||
| PCT/EP2011/053171 WO2011110467A2 (en) | 2010-03-12 | 2011-03-03 | System for removing contaminant particles, lithographic apparatus, method for removing contaminant particles and method for manufacturing a device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102918461A true CN102918461A (zh) | 2013-02-06 |
Family
ID=44544069
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011800133737A Pending CN102918461A (zh) | 2010-03-12 | 2011-03-03 | 用于去除污染物粒子的系统、光刻设备、用于去除污染物粒子的方法以及用于制造器件的方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20130070218A1 (enExample) |
| JP (1) | JP2013526004A (enExample) |
| KR (1) | KR20130054945A (enExample) |
| CN (1) | CN102918461A (enExample) |
| TW (1) | TW201214060A (enExample) |
| WO (1) | WO2011110467A2 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110945433A (zh) * | 2017-07-28 | 2020-03-31 | Asml荷兰有限公司 | 用于粒子抑制的粒子捕获器和阻挡件 |
| CN113917786A (zh) * | 2020-07-08 | 2022-01-11 | 卡尔蔡司Smt有限责任公司 | 用于从基板移除单一微粒的装置与方法 |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130235357A1 (en) * | 2012-03-12 | 2013-09-12 | Kla-Tencor Corporation | System and Method for Particle Control Near A Reticle |
| US20140253887A1 (en) * | 2013-03-07 | 2014-09-11 | Applied Materials, Inc. | Contamination prevention for photomask in extreme ultraviolet lithography application |
| ES2655798T3 (es) * | 2014-12-08 | 2018-02-21 | Agfa Nv | Sistema para reducir los residuos de ablación |
| US10678149B2 (en) | 2015-06-24 | 2020-06-09 | Diego Arturo Alvarado Castañeda | Method and apparatus for maintaining the surface of a reticle free of particles |
| DE102015215223A1 (de) | 2015-08-10 | 2017-02-16 | Carl Zeiss Smt Gmbh | EUV-Lithographiesystem |
| RU2623400C1 (ru) * | 2015-12-24 | 2017-06-26 | Федеральное государственное бюджетное учреждение науки Физико-технический институт им. А.Ф. Иоффе Российской академии наук | Способ защиты литографического оборудования от пылевых металлических частиц |
| DE102016208850A1 (de) * | 2016-05-23 | 2017-12-07 | Carl Zeiss Smt Gmbh | Projektionsbelichtungsanlage für die Halbleiterlithographie mit Elementen zur Plasmakonditionierung |
| US10149375B2 (en) * | 2016-09-14 | 2018-12-04 | Asml Netherlands B.V. | Target trajectory metrology in an extreme ultraviolet light source |
| NL2024289B1 (en) * | 2018-11-27 | 2020-09-25 | Asml Netherlands Bv | Membrane cleaning apparatus |
| CN113169047B (zh) | 2018-12-10 | 2024-09-10 | 应用材料公司 | 在极紫外线光刻应用中从光掩模去除附接特征 |
| IL294398A (en) * | 2020-01-23 | 2022-08-01 | Asml Holding Nv | A lithographic system provided with a deflection mechanism to change the trajectory of particulate debris |
| WO2023217495A1 (en) * | 2022-05-11 | 2023-11-16 | Asml Netherlands B.V. | Lithographic apparatus and associated methods |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1514305A (zh) * | 2002-12-23 | 2004-07-21 | Asml荷兰有限公司 | 具有残余物抑制装置的光刻装置和器件制造方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL1008352C2 (nl) | 1998-02-19 | 1999-08-20 | Stichting Tech Wetenschapp | Inrichting, geschikt voor extreem ultraviolet lithografie, omvattende een stralingsbron en een verwerkingsorgaan voor het verwerken van de van de stralingsbron afkomstige straling, alsmede een filter voor het onderdrukken van ongewenste atomaire en microscopische deeltjes welke door een stralingsbron zijn uitgezonden. |
| US6781673B2 (en) | 2000-08-25 | 2004-08-24 | Asml Netherlands B.V. | Mask handling apparatus, lithographic projection apparatus, device manufacturing method and device manufactured thereby |
| EP1223468B1 (en) * | 2001-01-10 | 2008-07-02 | ASML Netherlands B.V. | Lithographic projection apparatus and device manufacturing method |
| US6614505B2 (en) * | 2001-01-10 | 2003-09-02 | Asml Netherlands B.V. | Lithographic projection apparatus, device manufacturing method, and device manufactured thereby |
| US7230258B2 (en) * | 2003-07-24 | 2007-06-12 | Intel Corporation | Plasma-based debris mitigation for extreme ultraviolet (EUV) light source |
| EP1726993A1 (de) * | 2005-05-24 | 2006-11-29 | Carl Zeiss SMT AG | Optisches System und Verfahren zum Betreiben desselben |
| JP5758153B2 (ja) * | 2010-03-12 | 2015-08-05 | エーエスエムエル ネザーランズ ビー.ブイ. | 放射源装置、リソグラフィ装置、放射発生および送出方法、およびデバイス製造方法 |
-
2011
- 2011-03-03 CN CN2011800133737A patent/CN102918461A/zh active Pending
- 2011-03-03 JP JP2012556449A patent/JP2013526004A/ja not_active Withdrawn
- 2011-03-03 US US13/580,364 patent/US20130070218A1/en not_active Abandoned
- 2011-03-03 WO PCT/EP2011/053171 patent/WO2011110467A2/en not_active Ceased
- 2011-03-03 KR KR1020127026672A patent/KR20130054945A/ko not_active Withdrawn
- 2011-03-11 TW TW100108400A patent/TW201214060A/zh unknown
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1514305A (zh) * | 2002-12-23 | 2004-07-21 | Asml荷兰有限公司 | 具有残余物抑制装置的光刻装置和器件制造方法 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110945433A (zh) * | 2017-07-28 | 2020-03-31 | Asml荷兰有限公司 | 用于粒子抑制的粒子捕获器和阻挡件 |
| CN113917786A (zh) * | 2020-07-08 | 2022-01-11 | 卡尔蔡司Smt有限责任公司 | 用于从基板移除单一微粒的装置与方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2013526004A (ja) | 2013-06-20 |
| KR20130054945A (ko) | 2013-05-27 |
| WO2011110467A2 (en) | 2011-09-15 |
| TW201214060A (en) | 2012-04-01 |
| US20130070218A1 (en) | 2013-03-21 |
| WO2011110467A3 (en) | 2011-11-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102918461A (zh) | 用于去除污染物粒子的系统、光刻设备、用于去除污染物粒子的方法以及用于制造器件的方法 | |
| JP3972207B2 (ja) | デブリ抑制手段を備えたリソグラフィ装置およびデバイス製造方法 | |
| TWI534553B (zh) | 收集器鏡總成及產生極紫外光輻射之方法 | |
| CN102736442B (zh) | 光刻设备和方法 | |
| US8368040B2 (en) | Radiation system and lithographic apparatus | |
| US9986628B2 (en) | Method and apparatus for generating radiation | |
| CN102612667A (zh) | 光刻设备以及器件制造方法 | |
| US8547525B2 (en) | EUV radiation generation apparatus | |
| KR20120130321A (ko) | 방사선 소스, 리소그래피 장치 및 디바이스 제조 방법 | |
| CN102918463A (zh) | 多层反射镜 | |
| CN103019036A (zh) | 辐射源 | |
| JP4058404B2 (ja) | リソグラフィ投影装置およびリソグラフィ工程により集積構造を製造する方法 | |
| US20140218706A1 (en) | Radiation source and lithographic apparatus | |
| US7145631B2 (en) | Lithographic apparatus, illumination system and method for mitigating debris particles | |
| EP1434095A1 (en) | Lithographic apparatus and device manufacturing method | |
| CN106575085A (zh) | 光刻设备和制造器件的方法 | |
| KR20160134648A (ko) | Rf 플라즈마 필드를 이용한 euv 광학기기의 능동 세정 장치 및 방법 | |
| JP2017515136A5 (enExample) | ||
| JP4828985B2 (ja) | リソグラフィ装置およびデバイス製造方法 | |
| CN120344913A (zh) | 用于光刻设备的原位清洁 | |
| CN120435686A (zh) | 用于使图案形成装置放电的系统和方法 | |
| NL2007861A (en) | Radiation source and lithographic apparatus. |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20130206 |