KR20130054945A - 오염 입자들을 제거하기 위한 시스템, 리소그래피 장치, 오염 입자들을 제거하기 위한 방법 및 디바이스 제조 방법 - Google Patents

오염 입자들을 제거하기 위한 시스템, 리소그래피 장치, 오염 입자들을 제거하기 위한 방법 및 디바이스 제조 방법 Download PDF

Info

Publication number
KR20130054945A
KR20130054945A KR1020127026672A KR20127026672A KR20130054945A KR 20130054945 A KR20130054945 A KR 20130054945A KR 1020127026672 A KR1020127026672 A KR 1020127026672A KR 20127026672 A KR20127026672 A KR 20127026672A KR 20130054945 A KR20130054945 A KR 20130054945A
Authority
KR
South Korea
Prior art keywords
voltage
stage
electrodes
pair
radiation beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020127026672A
Other languages
English (en)
Korean (ko)
Inventor
블라디미르 이바노프
파벨 안치페로프
유리 시델니코프
루이지 스카카바로찌
헨드릭 니어호프
안드레이 야쿠닌
에릭 로엘로프 루프스트라
바딤 예프겐예비치 바니네
리카르트 요제프 브룰스
Original Assignee
에이에스엠엘 네델란즈 비.브이.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에이에스엠엘 네델란즈 비.브이. filed Critical 에이에스엠엘 네델란즈 비.브이.
Publication of KR20130054945A publication Critical patent/KR20130054945A/ko
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2026—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma

Landscapes

  • Atmospheric Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Cleaning In General (AREA)
  • X-Ray Techniques (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
KR1020127026672A 2010-03-12 2011-03-03 오염 입자들을 제거하기 위한 시스템, 리소그래피 장치, 오염 입자들을 제거하기 위한 방법 및 디바이스 제조 방법 Withdrawn KR20130054945A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US31350710P 2010-03-12 2010-03-12
US61/313,507 2010-03-12
US34852110P 2010-05-26 2010-05-26
US61/348,521 2010-05-26
PCT/EP2011/053171 WO2011110467A2 (en) 2010-03-12 2011-03-03 System for removing contaminant particles, lithographic apparatus, method for removing contaminant particles and method for manufacturing a device

Publications (1)

Publication Number Publication Date
KR20130054945A true KR20130054945A (ko) 2013-05-27

Family

ID=44544069

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127026672A Withdrawn KR20130054945A (ko) 2010-03-12 2011-03-03 오염 입자들을 제거하기 위한 시스템, 리소그래피 장치, 오염 입자들을 제거하기 위한 방법 및 디바이스 제조 방법

Country Status (6)

Country Link
US (1) US20130070218A1 (enExample)
JP (1) JP2013526004A (enExample)
KR (1) KR20130054945A (enExample)
CN (1) CN102918461A (enExample)
TW (1) TW201214060A (enExample)
WO (1) WO2011110467A2 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130235357A1 (en) * 2012-03-12 2013-09-12 Kla-Tencor Corporation System and Method for Particle Control Near A Reticle
US20140253887A1 (en) * 2013-03-07 2014-09-11 Applied Materials, Inc. Contamination prevention for photomask in extreme ultraviolet lithography application
EP3032334B1 (en) 2014-12-08 2017-10-18 Agfa Graphics Nv A system for reducing ablation debris
WO2016079607A1 (en) 2015-06-24 2016-05-26 Alvarado Castañeda Diego Arturo Method and apparatus for maintaining the surface of a reticle free of particles
DE102015215223A1 (de) 2015-08-10 2017-02-16 Carl Zeiss Smt Gmbh EUV-Lithographiesystem
RU2623400C1 (ru) * 2015-12-24 2017-06-26 Федеральное государственное бюджетное учреждение науки Физико-технический институт им. А.Ф. Иоффе Российской академии наук Способ защиты литографического оборудования от пылевых металлических частиц
DE102016208850A1 (de) * 2016-05-23 2017-12-07 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage für die Halbleiterlithographie mit Elementen zur Plasmakonditionierung
US10149375B2 (en) * 2016-09-14 2018-12-04 Asml Netherlands B.V. Target trajectory metrology in an extreme ultraviolet light source
US11175596B2 (en) * 2017-07-28 2021-11-16 Asml Netherlands B.V. Particle traps and barriers for particle suppression
US11673169B2 (en) 2018-11-27 2023-06-13 Asml Netherlands B.V. Membrane cleaning apparatus
WO2020123038A1 (en) 2018-12-10 2020-06-18 Applied Materials, Inc. Attachment feature removal from photomask in extreme ultraviolet lithography application
EP4094125A1 (en) 2020-01-23 2022-11-30 ASML Holding N.V. Lithographic system provided with a deflection apparatus for changing a trajectory of particulate debris
DE102020208568A1 (de) 2020-07-08 2022-01-13 Carl Zeiss Smt Gmbh Vorrichtung und Verfahren zum Entfernen eines einzelnen Partikels von einem Substrat
KR20250006107A (ko) * 2022-05-11 2025-01-10 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 연관 방법

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL1008352C2 (nl) 1998-02-19 1999-08-20 Stichting Tech Wetenschapp Inrichting, geschikt voor extreem ultraviolet lithografie, omvattende een stralingsbron en een verwerkingsorgaan voor het verwerken van de van de stralingsbron afkomstige straling, alsmede een filter voor het onderdrukken van ongewenste atomaire en microscopische deeltjes welke door een stralingsbron zijn uitgezonden.
KR100563774B1 (ko) 2000-08-25 2006-03-24 에이에스엠엘 네델란즈 비.브이. 마스크 조작장치, 리소그래피 투영장치, 디바이스제조방법 및 그것에 의하여 제조된 디바이스
US6614505B2 (en) * 2001-01-10 2003-09-02 Asml Netherlands B.V. Lithographic projection apparatus, device manufacturing method, and device manufactured thereby
EP1223468B1 (en) * 2001-01-10 2008-07-02 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
TWI255394B (en) * 2002-12-23 2006-05-21 Asml Netherlands Bv Lithographic apparatus with debris suppression means and device manufacturing method
US7230258B2 (en) * 2003-07-24 2007-06-12 Intel Corporation Plasma-based debris mitigation for extreme ultraviolet (EUV) light source
EP1726993A1 (de) * 2005-05-24 2006-11-29 Carl Zeiss SMT AG Optisches System und Verfahren zum Betreiben desselben
JP5758153B2 (ja) * 2010-03-12 2015-08-05 エーエスエムエル ネザーランズ ビー．ブイ． 放射源装置、リソグラフィ装置、放射発生および送出方法、およびデバイス製造方法

Also Published As

Publication number Publication date
WO2011110467A3 (en) 2011-11-24
WO2011110467A2 (en) 2011-09-15
CN102918461A (zh) 2013-02-06
JP2013526004A (ja) 2013-06-20
TW201214060A (en) 2012-04-01
US20130070218A1 (en) 2013-03-21

Similar Documents

Publication Publication Date Title
KR20130054945A (ko) 오염 입자들을 제거하기 위한 시스템, 리소그래피 장치, 오염 입자들을 제거하기 위한 방법 및 디바이스 제조 방법
JP3972207B2 (ja) デブリ抑制手段を備えたリソグラフィ装置およびデバイス製造方法
US9298110B2 (en) Radiation source apparatus, lithographic apparatus, method of generating and delivering radiation and method for manufacturing a device
KR100748447B1 (ko) 리소그래피 투영장치 및 상기 장치에 사용하기 위한파티클 배리어
US6614505B2 (en) Lithographic projection apparatus, device manufacturing method, and device manufactured thereby
EP1223468B1 (en) Lithographic projection apparatus and device manufacturing method
JP2009246046A (ja) 露光装置及びデバイス製造方法
US8547525B2 (en) EUV radiation generation apparatus
KR100544357B1 (ko) 2차 전자제거유닛을 포함하는 리소그래피투영장치
KR20090103847A (ko) 노광 장치 및 디바이스 제조 방법
JP2007517396A (ja) リソグラフィ装置、及びデブリ軽減システムを備える放射源、並びにリソグラフィ装置におけるデブリ粒子を軽減する方法
JP3813959B2 (ja) 複数の抑制メッシュを備えたリトグラフ投影装置
EP1434095A1 (en) Lithographic apparatus and device manufacturing method
CN114503034B (zh) 清洁装置、光刻设备、去除水或其它污染物的方法、和器件制造方法
JP4546446B2 (ja) リソグラフィ装置、システムおよびデバイス製造方法
NL2005554A (en) System for removing contaminant particles, lithographic apparatus, method for removing contaminant particles and method for manufacturing a device.
WO2024132381A1 (en) Lithographic apparatus and device manufacturing method
WO2025131731A1 (en) Lithographic apparatus and device manufacturing method with preventing contaminant particles from being deposited on a sensitive component, such as a patterning surface of a patterning device
CN120344913A (zh) 用于光刻设备的原位清洁
NL2005748A (en) Radiation source apparatus, lithographic apparatus, method of generating and delivering radiation and method for manufacturing a device.
NL2006106A (en) Lithographic apparatus.

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

PC1203 Withdrawal of no request for examination

St.27 status event code: N-1-6-B10-B12-nap-PC1203

WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid
P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000