JP2013526004A - 汚染粒子を除去するシステム、リソグラフィ装置、汚染粒子を除去する方法、及びデバイス製造方法 - Google Patents
汚染粒子を除去するシステム、リソグラフィ装置、汚染粒子を除去する方法、及びデバイス製造方法 Download PDFInfo
- Publication number
- JP2013526004A JP2013526004A JP2012556449A JP2012556449A JP2013526004A JP 2013526004 A JP2013526004 A JP 2013526004A JP 2012556449 A JP2012556449 A JP 2012556449A JP 2012556449 A JP2012556449 A JP 2012556449A JP 2013526004 A JP2013526004 A JP 2013526004A
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- 239000002245 particle Substances 0.000 title claims abstract description 104
- 239000000356 contaminant Substances 0.000 title claims abstract description 86
- 238000000034 method Methods 0.000 title claims description 16
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 230000005855 radiation Effects 0.000 claims abstract description 144
- 239000000758 substrate Substances 0.000 claims description 33
- 238000000059 patterning Methods 0.000 claims description 32
- 238000005286 illumination Methods 0.000 claims description 13
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 25
- 239000001257 hydrogen Substances 0.000 description 22
- 229910052739 hydrogen Inorganic materials 0.000 description 22
- 230000003287 optical effect Effects 0.000 description 17
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- 230000004888 barrier function Effects 0.000 description 10
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- 239000010410 layer Substances 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- 229910052718 tin Inorganic materials 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
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- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- 238000004590 computer program Methods 0.000 description 2
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- 229910052744 lithium Inorganic materials 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- -1 Li vapor Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
- G03F7/2026—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—Production of X-ray radiation generated from plasma
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Environmental & Geological Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Cleaning In General (AREA)
- X-Ray Techniques (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US31350710P | 2010-03-12 | 2010-03-12 | |
| US61/313,507 | 2010-03-12 | ||
| US34852110P | 2010-05-26 | 2010-05-26 | |
| US61/348,521 | 2010-05-26 | ||
| PCT/EP2011/053171 WO2011110467A2 (en) | 2010-03-12 | 2011-03-03 | System for removing contaminant particles, lithographic apparatus, method for removing contaminant particles and method for manufacturing a device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2013526004A true JP2013526004A (ja) | 2013-06-20 |
| JP2013526004A5 JP2013526004A5 (enExample) | 2014-04-17 |
Family
ID=44544069
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012556449A Withdrawn JP2013526004A (ja) | 2010-03-12 | 2011-03-03 | 汚染粒子を除去するシステム、リソグラフィ装置、汚染粒子を除去する方法、及びデバイス製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20130070218A1 (enExample) |
| JP (1) | JP2013526004A (enExample) |
| KR (1) | KR20130054945A (enExample) |
| CN (1) | CN102918461A (enExample) |
| TW (1) | TW201214060A (enExample) |
| WO (1) | WO2011110467A2 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130235357A1 (en) * | 2012-03-12 | 2013-09-12 | Kla-Tencor Corporation | System and Method for Particle Control Near A Reticle |
| US20140253887A1 (en) * | 2013-03-07 | 2014-09-11 | Applied Materials, Inc. | Contamination prevention for photomask in extreme ultraviolet lithography application |
| ES2655798T3 (es) * | 2014-12-08 | 2018-02-21 | Agfa Nv | Sistema para reducir los residuos de ablación |
| US10678149B2 (en) | 2015-06-24 | 2020-06-09 | Diego Arturo Alvarado Castañeda | Method and apparatus for maintaining the surface of a reticle free of particles |
| DE102015215223A1 (de) | 2015-08-10 | 2017-02-16 | Carl Zeiss Smt Gmbh | EUV-Lithographiesystem |
| RU2623400C1 (ru) * | 2015-12-24 | 2017-06-26 | Федеральное государственное бюджетное учреждение науки Физико-технический институт им. А.Ф. Иоффе Российской академии наук | Способ защиты литографического оборудования от пылевых металлических частиц |
| DE102016208850A1 (de) * | 2016-05-23 | 2017-12-07 | Carl Zeiss Smt Gmbh | Projektionsbelichtungsanlage für die Halbleiterlithographie mit Elementen zur Plasmakonditionierung |
| US10149375B2 (en) * | 2016-09-14 | 2018-12-04 | Asml Netherlands B.V. | Target trajectory metrology in an extreme ultraviolet light source |
| KR102670404B1 (ko) * | 2017-07-28 | 2024-05-30 | 에이에스엠엘 네델란즈 비.브이. | 입자 억제를 위한 입자 트랩 및 방벽 |
| NL2024289B1 (en) * | 2018-11-27 | 2020-09-25 | Asml Netherlands Bv | Membrane cleaning apparatus |
| CN113169047B (zh) | 2018-12-10 | 2024-09-10 | 应用材料公司 | 在极紫外线光刻应用中从光掩模去除附接特征 |
| IL294398A (en) * | 2020-01-23 | 2022-08-01 | Asml Holding Nv | A lithographic system provided with a deflection mechanism to change the trajectory of particulate debris |
| DE102020208568A1 (de) * | 2020-07-08 | 2022-01-13 | Carl Zeiss Smt Gmbh | Vorrichtung und Verfahren zum Entfernen eines einzelnen Partikels von einem Substrat |
| WO2023217495A1 (en) * | 2022-05-11 | 2023-11-16 | Asml Netherlands B.V. | Lithographic apparatus and associated methods |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL1008352C2 (nl) | 1998-02-19 | 1999-08-20 | Stichting Tech Wetenschapp | Inrichting, geschikt voor extreem ultraviolet lithografie, omvattende een stralingsbron en een verwerkingsorgaan voor het verwerken van de van de stralingsbron afkomstige straling, alsmede een filter voor het onderdrukken van ongewenste atomaire en microscopische deeltjes welke door een stralingsbron zijn uitgezonden. |
| US6781673B2 (en) | 2000-08-25 | 2004-08-24 | Asml Netherlands B.V. | Mask handling apparatus, lithographic projection apparatus, device manufacturing method and device manufactured thereby |
| EP1223468B1 (en) * | 2001-01-10 | 2008-07-02 | ASML Netherlands B.V. | Lithographic projection apparatus and device manufacturing method |
| US6614505B2 (en) * | 2001-01-10 | 2003-09-02 | Asml Netherlands B.V. | Lithographic projection apparatus, device manufacturing method, and device manufactured thereby |
| TWI255394B (en) * | 2002-12-23 | 2006-05-21 | Asml Netherlands Bv | Lithographic apparatus with debris suppression means and device manufacturing method |
| US7230258B2 (en) * | 2003-07-24 | 2007-06-12 | Intel Corporation | Plasma-based debris mitigation for extreme ultraviolet (EUV) light source |
| EP1726993A1 (de) * | 2005-05-24 | 2006-11-29 | Carl Zeiss SMT AG | Optisches System und Verfahren zum Betreiben desselben |
| JP5758153B2 (ja) * | 2010-03-12 | 2015-08-05 | エーエスエムエル ネザーランズ ビー．ブイ． | 放射源装置、リソグラフィ装置、放射発生および送出方法、およびデバイス製造方法 |
-
2011
- 2011-03-03 CN CN2011800133737A patent/CN102918461A/zh active Pending
- 2011-03-03 JP JP2012556449A patent/JP2013526004A/ja not_active Withdrawn
- 2011-03-03 US US13/580,364 patent/US20130070218A1/en not_active Abandoned
- 2011-03-03 WO PCT/EP2011/053171 patent/WO2011110467A2/en not_active Ceased
- 2011-03-03 KR KR1020127026672A patent/KR20130054945A/ko not_active Withdrawn
- 2011-03-11 TW TW100108400A patent/TW201214060A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CN102918461A (zh) | 2013-02-06 |
| KR20130054945A (ko) | 2013-05-27 |
| WO2011110467A2 (en) | 2011-09-15 |
| TW201214060A (en) | 2012-04-01 |
| US20130070218A1 (en) | 2013-03-21 |
| WO2011110467A3 (en) | 2011-11-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140228 |
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| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20140228 |
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| A761 | Written withdrawal of application |
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