JP2013526004A - 汚染粒子を除去するシステム、リソグラフィ装置、汚染粒子を除去する方法、及びデバイス製造方法 - Google Patents

汚染粒子を除去するシステム、リソグラフィ装置、汚染粒子を除去する方法、及びデバイス製造方法 Download PDF

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JP2013526004A
JP2013526004A JP2012556449A JP2012556449A JP2013526004A JP 2013526004 A JP2013526004 A JP 2013526004A JP 2012556449 A JP2012556449 A JP 2012556449A JP 2012556449 A JP2012556449 A JP 2012556449A JP 2013526004 A JP2013526004 A JP 2013526004A
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Japan
Prior art keywords
voltage
stage
electrodes
contaminant particles
pair
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Japanese (ja)
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JP2013526004A5 (enExample
Inventor
イワノフ，ウラジミール
アンツィフェロブ，パベル
シデルニコブ，ユリイ
スキャカラロッツィ，ルイージ
ネルホフ，ヘンドリック
ヤクニン，アンドレイ
ルーロフ ループストラ，エリック
バニエ，バディム，エヴィジェンエビッチ
ブルルス，リチャード，ヨセフ
Original Assignee
エーエスエムエル ネザーランズ ビー．ブイ．
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Publication of JP2013526004A publication Critical patent/JP2013526004A/ja
Publication of JP2013526004A5 publication Critical patent/JP2013526004A5/ja
Withdrawn legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • H10P76/2041—
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2026—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma

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  • Atmospheric Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Cleaning In General (AREA)
  • X-Ray Techniques (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2012556449A 2010-03-12 2011-03-03 汚染粒子を除去するシステム、リソグラフィ装置、汚染粒子を除去する方法、及びデバイス製造方法 Withdrawn JP2013526004A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US31350710P 2010-03-12 2010-03-12
US61/313,507 2010-03-12
US34852110P 2010-05-26 2010-05-26
US61/348,521 2010-05-26
PCT/EP2011/053171 WO2011110467A2 (en) 2010-03-12 2011-03-03 System for removing contaminant particles, lithographic apparatus, method for removing contaminant particles and method for manufacturing a device

Publications (2)

Publication Number Publication Date
JP2013526004A true JP2013526004A (ja) 2013-06-20
JP2013526004A5 JP2013526004A5 (enExample) 2014-04-17

Family

ID=44544069

Family Applications (1)

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JP2012556449A Withdrawn JP2013526004A (ja) 2010-03-12 2011-03-03 汚染粒子を除去するシステム、リソグラフィ装置、汚染粒子を除去する方法、及びデバイス製造方法

Country Status (6)

Country Link
US (1) US20130070218A1 (enExample)
JP (1) JP2013526004A (enExample)
KR (1) KR20130054945A (enExample)
CN (1) CN102918461A (enExample)
TW (1) TW201214060A (enExample)
WO (1) WO2011110467A2 (enExample)

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US20130235357A1 (en) * 2012-03-12 2013-09-12 Kla-Tencor Corporation System and Method for Particle Control Near A Reticle
US20140253887A1 (en) * 2013-03-07 2014-09-11 Applied Materials, Inc. Contamination prevention for photomask in extreme ultraviolet lithography application
EP3032334B1 (en) * 2014-12-08 2017-10-18 Agfa Graphics Nv A system for reducing ablation debris
WO2016079607A1 (en) * 2015-06-24 2016-05-26 Alvarado Castañeda Diego Arturo Method and apparatus for maintaining the surface of a reticle free of particles
DE102015215223A1 (de) 2015-08-10 2017-02-16 Carl Zeiss Smt Gmbh EUV-Lithographiesystem
RU2623400C1 (ru) * 2015-12-24 2017-06-26 Федеральное государственное бюджетное учреждение науки Физико-технический институт им. А.Ф. Иоффе Российской академии наук Способ защиты литографического оборудования от пылевых металлических частиц
DE102016208850A1 (de) * 2016-05-23 2017-12-07 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage für die Halbleiterlithographie mit Elementen zur Plasmakonditionierung
US10149375B2 (en) * 2016-09-14 2018-12-04 Asml Netherlands B.V. Target trajectory metrology in an extreme ultraviolet light source
KR102670404B1 (ko) * 2017-07-28 2024-05-30 에이에스엠엘 네델란즈 비.브이. 입자 억제를 위한 입자 트랩 및 방벽
KR20210093263A (ko) * 2018-11-27 2021-07-27 에이에스엠엘 네델란즈 비.브이. 멤브레인 세정 장치
KR102714101B1 (ko) 2018-12-10 2024-10-04 어플라이드 머티어리얼스, 인코포레이티드 극자외선 리소그래피 애플리케이션에서 포토마스크로부터의 부착 피처 제거
CN115176202A (zh) 2020-01-23 2022-10-11 Asml控股股份有限公司 配有用于改变颗粒碎片的轨迹的偏转设备的光刻系统
DE102020208568A1 (de) 2020-07-08 2022-01-13 Carl Zeiss Smt Gmbh Vorrichtung und Verfahren zum Entfernen eines einzelnen Partikels von einem Substrat
CN119317867A (zh) * 2022-05-11 2025-01-14 Asml荷兰有限公司 光刻设备及相关方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL1008352C2 (nl) 1998-02-19 1999-08-20 Stichting Tech Wetenschapp Inrichting, geschikt voor extreem ultraviolet lithografie, omvattende een stralingsbron en een verwerkingsorgaan voor het verwerken van de van de stralingsbron afkomstige straling, alsmede een filter voor het onderdrukken van ongewenste atomaire en microscopische deeltjes welke door een stralingsbron zijn uitgezonden.
DE60118669T2 (de) * 2000-08-25 2007-01-11 Asml Netherlands B.V. Lithographischer Projektionsapparat
US6614505B2 (en) * 2001-01-10 2003-09-02 Asml Netherlands B.V. Lithographic projection apparatus, device manufacturing method, and device manufactured thereby
EP1223468B1 (en) * 2001-01-10 2008-07-02 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
TWI255394B (en) * 2002-12-23 2006-05-21 Asml Netherlands Bv Lithographic apparatus with debris suppression means and device manufacturing method
US7230258B2 (en) * 2003-07-24 2007-06-12 Intel Corporation Plasma-based debris mitigation for extreme ultraviolet (EUV) light source
EP1726993A1 (de) * 2005-05-24 2006-11-29 Carl Zeiss SMT AG Optisches System und Verfahren zum Betreiben desselben
JP5758153B2 (ja) * 2010-03-12 2015-08-05 エーエスエムエル ネザーランズ ビー．ブイ． 放射源装置、リソグラフィ装置、放射発生および送出方法、およびデバイス製造方法

Also Published As

Publication number Publication date
WO2011110467A3 (en) 2011-11-24
US20130070218A1 (en) 2013-03-21
CN102918461A (zh) 2013-02-06
TW201214060A (en) 2012-04-01
WO2011110467A2 (en) 2011-09-15
KR20130054945A (ko) 2013-05-27

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