TWI703632B - 電漿處理裝置及電漿處理方法 - Google Patents

電漿處理裝置及電漿處理方法 Download PDF

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Publication number
TWI703632B
TWI703632B TW107103016A TW107103016A TWI703632B TW I703632 B TWI703632 B TW I703632B TW 107103016 A TW107103016 A TW 107103016A TW 107103016 A TW107103016 A TW 107103016A TW I703632 B TWI703632 B TW I703632B
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Taiwan
Prior art keywords
frequency power
electrode
frequency
power supply
phase
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TW107103016A
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English (en)
Chinese (zh)
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TW201916158A (zh
Inventor
山田一也
山本浩一
安井尚輝
池田紀彥
森功
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日商日立全球先端科技股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32311—Circuits specially adapted for controlling the microwave discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32678—Electron cyclotron resonance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
TW107103016A 2017-09-20 2018-01-29 電漿處理裝置及電漿處理方法 TWI703632B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-179665 2017-09-20
JP2017179665A JP6703508B2 (ja) 2017-09-20 2017-09-20 プラズマ処理装置及びプラズマ処理方法

Publications (2)

Publication Number Publication Date
TW201916158A TW201916158A (zh) 2019-04-16
TWI703632B true TWI703632B (zh) 2020-09-01

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US (2) US10699884B2 (enExample)
JP (1) JP6703508B2 (enExample)
KR (1) KR102042576B1 (enExample)
CN (1) CN109524288B (enExample)
TW (1) TWI703632B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11721526B2 (en) * 2019-05-31 2023-08-08 Mks Instruments, Inc. System and method of power generation with phase linked solid-state generator modules
KR102254446B1 (ko) * 2019-06-20 2021-05-24 주식회사 히타치하이테크 플라스마 처리 장치 및 플라스마 처리 방법
US11561089B2 (en) 2019-07-04 2023-01-24 Hitachi High-Tech Corporation Three-dimensional shape detection apparatus, three-dimensional shape detection method and plasma processing apparatus
CN112616320B (zh) * 2019-08-05 2024-04-05 株式会社日立高新技术 等离子处理装置
JP2023516076A (ja) 2020-03-04 2023-04-17 ラム リサーチ コーポレーション 調整可能なエッジシースシステムでの反射電力最小化
US12597589B2 (en) * 2020-06-29 2026-04-07 Sumitomo Osaka Cement Co., Ltd. Electrostatic chuck
CN117280446A (zh) 2021-08-23 2023-12-22 株式会社日立高新技术 等离子处理装置以及等离子处理方法
WO2023158490A1 (en) * 2022-02-18 2023-08-24 Lam Research Corporation Systems and methods for central frequency tuning
US12695058B2 (en) * 2022-08-10 2026-07-28 Mks Inc. Plasma process control of multi-electrode systems equipped with ion energy sensors
US20240355586A1 (en) * 2023-04-24 2024-10-24 Applied Materials, Inc. Multi-electrode source assembly for plasma processing
US20250125121A1 (en) * 2023-10-16 2025-04-17 Uvat Technology Co.,Ltd. Two-electrode continuous plasma processing system

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170169996A1 (en) * 2012-09-26 2017-06-15 Kabushiki Kaisha Toshiba Plasma processing apparatus and plasma processing methdo

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04271122A (ja) * 1991-02-27 1992-09-28 Fuji Electric Co Ltd プラズマ処理装置
JP3368743B2 (ja) * 1996-03-19 2003-01-20 株式会社日立製作所 プラズマ処理装置及びプラズマ処理方法
JP2002141340A (ja) * 2000-08-25 2002-05-17 Hitachi Ltd プラズマ処理装置及びプラズマ処理方法
US6819052B2 (en) * 2002-05-31 2004-11-16 Nagano Japan Radio Co., Ltd. Coaxial type impedance matching device and impedance detecting method for plasma generation
JP2004022822A (ja) * 2002-06-17 2004-01-22 Shibaura Mechatronics Corp プラズマ処理方法および装置
JP2005071872A (ja) * 2003-08-26 2005-03-17 Noda Rf Technologies:Kk 高周波電源装置および高周波電力供給方法
JP2007041769A (ja) * 2005-08-02 2007-02-15 Nec Tokin Corp Ｉｃカード用アンテナコイルの形成治具、およびｉｃカード用アンテナコイルの製造方法
JP2007067037A (ja) * 2005-08-30 2007-03-15 Hitachi High-Technologies Corp 真空処理装置
JP2008027816A (ja) * 2006-07-24 2008-02-07 Canon Inc プラズマ処理装置及びプラズマ処理方法
US8980049B2 (en) * 2007-04-02 2015-03-17 Charm Engineering Co., Ltd. Apparatus for supporting substrate and plasma etching apparatus having the same
US20090297404A1 (en) * 2008-05-29 2009-12-03 Applied Materials, Inc. Plasma reactor with high speed plasma impedance tuning by modulation of source power or bias power
US20100018648A1 (en) * 2008-07-23 2010-01-28 Applied Marterials, Inc. Workpiece support for a plasma reactor with controlled apportionment of rf power to a process kit ring
JP5419666B2 (ja) * 2009-06-12 2014-02-19 三菱重工業株式会社 基板処理装置
JP2011228436A (ja) * 2010-04-19 2011-11-10 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
JP5800547B2 (ja) * 2011-03-29 2015-10-28 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US9082589B2 (en) * 2012-10-09 2015-07-14 Novellus Systems, Inc. Hybrid impedance matching for inductively coupled plasma system
KR102027628B1 (ko) * 2012-12-18 2019-10-01 트럼프 헛팅거 게엠베하 + 코 카게 고주파수 전력을 생산하기 위한 방법 및 부하에 전력을 공급하기 위한 전력 컨버터를 갖는 전력 공급 시스템
JP6357436B2 (ja) * 2014-07-25 2018-07-11 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP6536082B2 (ja) * 2015-02-26 2019-07-03 コニカミノルタ株式会社 電気機器用オプション装置及び画像形成装置
JP6488150B2 (ja) * 2015-02-27 2019-03-20 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP6539113B2 (ja) * 2015-05-28 2019-07-03 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
US10153139B2 (en) * 2015-06-17 2018-12-11 Applied Materials, Inc. Multiple electrode substrate support assembly and phase control system

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170169996A1 (en) * 2012-09-26 2017-06-15 Kabushiki Kaisha Toshiba Plasma processing apparatus and plasma processing methdo

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Publication number Publication date
JP2019057547A (ja) 2019-04-11
KR102042576B1 (ko) 2019-11-11
CN109524288A (zh) 2019-03-26
CN109524288B (zh) 2021-01-05
TW201916158A (zh) 2019-04-16
JP6703508B2 (ja) 2020-06-03
US10699884B2 (en) 2020-06-30
KR20190032981A (ko) 2019-03-28
US20190088452A1 (en) 2019-03-21
US20200279719A1 (en) 2020-09-03
US11094512B2 (en) 2021-08-17

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