CN109524288B - 等离子体处理装置以及等离子体处理方法 - Google Patents

等离子体处理装置以及等离子体处理方法 Download PDF

Info

Publication number
CN109524288B
CN109524288B CN201711453386.1A CN201711453386A CN109524288B CN 109524288 B CN109524288 B CN 109524288B CN 201711453386 A CN201711453386 A CN 201711453386A CN 109524288 B CN109524288 B CN 109524288B
Authority
CN
China
Prior art keywords
frequency power
electrode
phase
frequency
plasma processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201711453386.1A
Other languages
English (en)
Chinese (zh)
Other versions
CN109524288A (zh
Inventor
山田一也
山本浩一
安井尚辉
池田纪彦
森功
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High-Tech Corp
Original Assignee
Hitachi High Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp filed Critical Hitachi High Technologies Corp
Publication of CN109524288A publication Critical patent/CN109524288A/zh
Application granted granted Critical
Publication of CN109524288B publication Critical patent/CN109524288B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32311—Circuits specially adapted for controlling the microwave discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32678—Electron cyclotron resonance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
CN201711453386.1A 2017-09-20 2017-12-27 等离子体处理装置以及等离子体处理方法 Active CN109524288B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-179665 2017-09-20
JP2017179665A JP6703508B2 (ja) 2017-09-20 2017-09-20 プラズマ処理装置及びプラズマ処理方法

Publications (2)

Publication Number Publication Date
CN109524288A CN109524288A (zh) 2019-03-26
CN109524288B true CN109524288B (zh) 2021-01-05

Family

ID=65721131

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201711453386.1A Active CN109524288B (zh) 2017-09-20 2017-12-27 等离子体处理装置以及等离子体处理方法

Country Status (5)

Country Link
US (2) US10699884B2 (enExample)
JP (1) JP6703508B2 (enExample)
KR (1) KR102042576B1 (enExample)
CN (1) CN109524288B (enExample)
TW (1) TWI703632B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11721526B2 (en) * 2019-05-31 2023-08-08 Mks Instruments, Inc. System and method of power generation with phase linked solid-state generator modules
KR102254446B1 (ko) * 2019-06-20 2021-05-24 주식회사 히타치하이테크 플라스마 처리 장치 및 플라스마 처리 방법
US11561089B2 (en) 2019-07-04 2023-01-24 Hitachi High-Tech Corporation Three-dimensional shape detection apparatus, three-dimensional shape detection method and plasma processing apparatus
CN112616320B (zh) * 2019-08-05 2024-04-05 株式会社日立高新技术 等离子处理装置
JP2023516076A (ja) 2020-03-04 2023-04-17 ラム リサーチ コーポレーション 調整可能なエッジシースシステムでの反射電力最小化
US12597589B2 (en) * 2020-06-29 2026-04-07 Sumitomo Osaka Cement Co., Ltd. Electrostatic chuck
CN117280446A (zh) 2021-08-23 2023-12-22 株式会社日立高新技术 等离子处理装置以及等离子处理方法
WO2023158490A1 (en) * 2022-02-18 2023-08-24 Lam Research Corporation Systems and methods for central frequency tuning
US12695058B2 (en) * 2022-08-10 2026-07-28 Mks Inc. Plasma process control of multi-electrode systems equipped with ion energy sensors
US20240355586A1 (en) * 2023-04-24 2024-10-24 Applied Materials, Inc. Multi-electrode source assembly for plasma processing
US20250125121A1 (en) * 2023-10-16 2025-04-17 Uvat Technology Co.,Ltd. Two-electrode continuous plasma processing system

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004022822A (ja) * 2002-06-17 2004-01-22 Shibaura Mechatronics Corp プラズマ処理方法および装置
JP2005071872A (ja) * 2003-08-26 2005-03-17 Noda Rf Technologies:Kk 高周波電源装置および高周波電力供給方法
JP2007067037A (ja) * 2005-08-30 2007-03-15 Hitachi High-Technologies Corp 真空処理装置
JP2008027816A (ja) * 2006-07-24 2008-02-07 Canon Inc プラズマ処理装置及びプラズマ処理方法
JP2011017076A (ja) * 2009-06-12 2011-01-27 Mitsubishi Heavy Ind Ltd 基板処理装置
CN104871430A (zh) * 2012-12-18 2015-08-26 通快许廷格两合公司 用于产生高频功率的方法和具有用于给负载供送功率的功率转换器的功率供送系统
JP2016162759A (ja) * 2015-02-26 2016-09-05 コニカミノルタ株式会社 電気機器用オプション装置
CN106024569A (zh) * 2012-10-09 2016-10-12 诺发系统公司 用于电感耦合等离子体系统的混合阻抗匹配

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04271122A (ja) * 1991-02-27 1992-09-28 Fuji Electric Co Ltd プラズマ処理装置
JP3368743B2 (ja) * 1996-03-19 2003-01-20 株式会社日立製作所 プラズマ処理装置及びプラズマ処理方法
JP2002141340A (ja) * 2000-08-25 2002-05-17 Hitachi Ltd プラズマ処理装置及びプラズマ処理方法
US6819052B2 (en) * 2002-05-31 2004-11-16 Nagano Japan Radio Co., Ltd. Coaxial type impedance matching device and impedance detecting method for plasma generation
JP2007041769A (ja) * 2005-08-02 2007-02-15 Nec Tokin Corp Ｉｃカード用アンテナコイルの形成治具、およびｉｃカード用アンテナコイルの製造方法
US8980049B2 (en) * 2007-04-02 2015-03-17 Charm Engineering Co., Ltd. Apparatus for supporting substrate and plasma etching apparatus having the same
US20090297404A1 (en) * 2008-05-29 2009-12-03 Applied Materials, Inc. Plasma reactor with high speed plasma impedance tuning by modulation of source power or bias power
US20100018648A1 (en) * 2008-07-23 2010-01-28 Applied Marterials, Inc. Workpiece support for a plasma reactor with controlled apportionment of rf power to a process kit ring
JP2011228436A (ja) * 2010-04-19 2011-11-10 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
JP5800547B2 (ja) * 2011-03-29 2015-10-28 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP6207880B2 (ja) * 2012-09-26 2017-10-04 東芝メモリ株式会社 プラズマ処理装置およびプラズマ処理方法
JP6357436B2 (ja) * 2014-07-25 2018-07-11 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP6488150B2 (ja) * 2015-02-27 2019-03-20 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP6539113B2 (ja) * 2015-05-28 2019-07-03 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
US10153139B2 (en) * 2015-06-17 2018-12-11 Applied Materials, Inc. Multiple electrode substrate support assembly and phase control system

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004022822A (ja) * 2002-06-17 2004-01-22 Shibaura Mechatronics Corp プラズマ処理方法および装置
JP2005071872A (ja) * 2003-08-26 2005-03-17 Noda Rf Technologies:Kk 高周波電源装置および高周波電力供給方法
JP2007067037A (ja) * 2005-08-30 2007-03-15 Hitachi High-Technologies Corp 真空処理装置
JP2008027816A (ja) * 2006-07-24 2008-02-07 Canon Inc プラズマ処理装置及びプラズマ処理方法
JP2011017076A (ja) * 2009-06-12 2011-01-27 Mitsubishi Heavy Ind Ltd 基板処理装置
CN106024569A (zh) * 2012-10-09 2016-10-12 诺发系统公司 用于电感耦合等离子体系统的混合阻抗匹配
CN104871430A (zh) * 2012-12-18 2015-08-26 通快许廷格两合公司 用于产生高频功率的方法和具有用于给负载供送功率的功率转换器的功率供送系统
JP2016162759A (ja) * 2015-02-26 2016-09-05 コニカミノルタ株式会社 電気機器用オプション装置

Also Published As

Publication number Publication date
JP2019057547A (ja) 2019-04-11
KR102042576B1 (ko) 2019-11-11
CN109524288A (zh) 2019-03-26
TW201916158A (zh) 2019-04-16
JP6703508B2 (ja) 2020-06-03
TWI703632B (zh) 2020-09-01
US10699884B2 (en) 2020-06-30
KR20190032981A (ko) 2019-03-28
US20190088452A1 (en) 2019-03-21
US20200279719A1 (en) 2020-09-03
US11094512B2 (en) 2021-08-17

Similar Documents

Publication Publication Date Title
US11094512B2 (en) Plasma processing apparatus and plasma processing method
JP6843485B2 (ja) 多電極基板支持アセンブリ及び位相制御システム
KR101387067B1 (ko) 드라이 에칭 장치 및 드라이 에칭 방법
US8169148B2 (en) Plasma generating apparatus
JP7364758B2 (ja) プラズマ処理方法
JP6643212B2 (ja) プラズマ処理装置及びプラズマ処理方法
US11062884B2 (en) Plasma processing apparatus and plasma processing method
US7771608B2 (en) Plasma processing method and apparatus
JP2016031955A (ja) プラズマ処理装置およびプラズマ処理方法
CN110770880B (zh) 等离子处理装置
US20240128053A1 (en) Multi-channel pulse rf power supply apparatus
JP2016136553A (ja) プラズマ処理装置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant