JP2006210726A5 - - Google Patents

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Publication number
JP2006210726A5
JP2006210726A5 JP2005022112A JP2005022112A JP2006210726A5 JP 2006210726 A5 JP2006210726 A5 JP 2006210726A5 JP 2005022112 A JP2005022112 A JP 2005022112A JP 2005022112 A JP2005022112 A JP 2005022112A JP 2006210726 A5 JP2006210726 A5 JP 2006210726A5
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JP
Japan
Prior art keywords
plasma processing
voltage
plasma
peak
electrostatic adsorption
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Application number
JP2005022112A
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English (en)
Japanese (ja)
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JP4468194B2 (ja
JP2006210726A (ja
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Priority to JP2005022112A priority Critical patent/JP4468194B2/ja
Priority claimed from JP2005022112A external-priority patent/JP4468194B2/ja
Priority to TW094105872A priority patent/TWI290345B/zh
Priority to KR1020050016720A priority patent/KR100757528B1/ko
Priority to US11/069,551 priority patent/US7224568B2/en
Publication of JP2006210726A publication Critical patent/JP2006210726A/ja
Publication of JP2006210726A5 publication Critical patent/JP2006210726A5/ja
Application granted granted Critical
Publication of JP4468194B2 publication Critical patent/JP4468194B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2005022112A 2005-01-28 2005-01-28 プラズマ処理方法およびプラズマ処理装置 Expired - Lifetime JP4468194B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2005022112A JP4468194B2 (ja) 2005-01-28 2005-01-28 プラズマ処理方法およびプラズマ処理装置
TW094105872A TWI290345B (en) 2005-01-28 2005-02-25 Plasma processing method and plasma processing apparatus
KR1020050016720A KR100757528B1 (ko) 2005-01-28 2005-02-28 플라즈마처리방법 및 플라즈마처리장치
US11/069,551 US7224568B2 (en) 2005-01-28 2005-03-02 Plasma processing method and plasma processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005022112A JP4468194B2 (ja) 2005-01-28 2005-01-28 プラズマ処理方法およびプラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2006210726A JP2006210726A (ja) 2006-08-10
JP2006210726A5 true JP2006210726A5 (enExample) 2006-12-21
JP4468194B2 JP4468194B2 (ja) 2010-05-26

Family

ID=36756289

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005022112A Expired - Lifetime JP4468194B2 (ja) 2005-01-28 2005-01-28 プラズマ処理方法およびプラズマ処理装置

Country Status (4)

Country Link
US (1) US7224568B2 (enExample)
JP (1) JP4468194B2 (enExample)
KR (1) KR100757528B1 (enExample)
TW (1) TWI290345B (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5094002B2 (ja) * 2005-09-06 2012-12-12 ルネサスエレクトロニクス株式会社 プラズマ処理装置およびその異常放電抑止方法
JP5372419B2 (ja) * 2008-06-25 2013-12-18 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法
DE102008036766B4 (de) * 2008-08-07 2013-08-01 Alexander Gschwandtner Vorrichtung und Verfahren zum Erzeugen dielektrischer Schichten im Mikrowellenplasma
US9063356B2 (en) 2008-09-05 2015-06-23 Japan Display Inc. Method for repairing display device and apparatus for same
US9767988B2 (en) 2010-08-29 2017-09-19 Advanced Energy Industries, Inc. Method of controlling the switched mode ion energy distribution system
US10707055B2 (en) 2017-11-17 2020-07-07 Advanced Energy Industries, Inc. Spatial and temporal control of ion bias voltage for plasma processing
US11615941B2 (en) 2009-05-01 2023-03-28 Advanced Energy Industries, Inc. System, method, and apparatus for controlling ion energy distribution in plasma processing systems
JP2011187881A (ja) * 2010-03-11 2011-09-22 Hitachi High-Technologies Corp プラズマ処理装置および方法
US9685297B2 (en) 2012-08-28 2017-06-20 Advanced Energy Industries, Inc. Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system
KR102168064B1 (ko) * 2013-02-20 2020-10-20 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 플라즈마 처리 방법
JP6357436B2 (ja) 2014-07-25 2018-07-11 株式会社日立ハイテクノロジーズ プラズマ処理装置
KR101677748B1 (ko) 2014-10-29 2016-11-29 삼성전자 주식회사 펄스 플라즈마 장치 및 펄스 플라즈마 장치 구동 방법
US9779919B2 (en) 2015-01-09 2017-10-03 Hitachi High-Technologies Corporation Plasma processing apparatus and plasma processing method
JP6567943B2 (ja) 2015-01-09 2019-08-28 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP6396822B2 (ja) * 2015-02-16 2018-09-26 東京エレクトロン株式会社 プラズマ処理装置のサセプタの電位を制御する方法
US9824857B2 (en) * 2016-01-14 2017-11-21 Varian Semiconductor Equipment Associates, Inc. Method for implantation of semiconductor wafers having high bulk resistivity
US10535505B2 (en) * 2016-11-11 2020-01-14 Lam Research Corporation Plasma light up suppression
PL3711080T3 (pl) 2017-11-17 2023-12-11 Aes Global Holdings, Pte. Ltd. Zsynchronizowane pulsowanie źródła przetwarzania plazmy oraz polaryzacji podłoża
TWI767088B (zh) 2017-11-17 2022-06-11 新加坡商Ａｅｓ全球公司 電漿處理系統，用於調變其中的電源的控制方法及相關的電漿處理控制系統
US11437221B2 (en) 2017-11-17 2022-09-06 Advanced Energy Industries, Inc. Spatial monitoring and control of plasma processing environments
US12230476B2 (en) 2017-11-17 2025-02-18 Advanced Energy Industries, Inc. Integrated control of a plasma processing system
KR102524810B1 (ko) 2017-12-26 2023-04-24 삼성전자주식회사 반도체 공정의 제어 방법
CN113748227B (zh) 2019-04-15 2024-10-29 应用材料公司 静电吸附工艺
CN114222958B (zh) 2019-07-12 2024-03-19 先进工程解决方案全球控股私人有限公司 具有单个受控开关的偏置电源
US12125674B2 (en) 2020-05-11 2024-10-22 Advanced Energy Industries, Inc. Surface charge and power feedback and control using a switch mode bias system
WO2022180723A1 (ja) * 2021-02-25 2022-09-01 株式会社日立ハイテク プラズマ処理装置
JP7648498B2 (ja) * 2021-10-07 2025-03-18 東京エレクトロン株式会社 制御プログラム、制御方法、及びプラズマ処理装置
US11670487B1 (en) 2022-01-26 2023-06-06 Advanced Energy Industries, Inc. Bias supply control and data processing
US12046448B2 (en) 2022-01-26 2024-07-23 Advanced Energy Industries, Inc. Active switch on time control for bias supply
US11942309B2 (en) 2022-01-26 2024-03-26 Advanced Energy Industries, Inc. Bias supply with resonant switching
US11978613B2 (en) 2022-09-01 2024-05-07 Advanced Energy Industries, Inc. Transition control in a bias supply

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US5557215A (en) 1993-05-12 1996-09-17 Tokyo Electron Limited Self-bias measuring method, apparatus thereof and electrostatic chucking apparatus
US5737177A (en) * 1996-10-17 1998-04-07 Applied Materials, Inc. Apparatus and method for actively controlling the DC potential of a cathode pedestal
US6367413B1 (en) * 1999-06-15 2002-04-09 Tokyo Electron Limited Apparatus for monitoring substrate biasing during plasma processing of a substrate

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