TWI290345B - Plasma processing method and plasma processing apparatus - Google Patents
Plasma processing method and plasma processing apparatus Download PDFInfo
- Publication number
- TWI290345B TWI290345B TW094105872A TW94105872A TWI290345B TW I290345 B TWI290345 B TW I290345B TW 094105872 A TW094105872 A TW 094105872A TW 94105872 A TW94105872 A TW 94105872A TW I290345 B TWI290345 B TW I290345B
- Authority
- TW
- Taiwan
- Prior art keywords
- plasma
- voltage
- electrode
- electrostatic adsorption
- peak
- Prior art date
Links
- 238000012545 processing Methods 0.000 title claims abstract description 41
- 238000003672 processing method Methods 0.000 title claims description 12
- 238000001179 sorption measurement Methods 0.000 claims description 64
- 238000000034 method Methods 0.000 claims description 22
- 230000008878 coupling Effects 0.000 claims description 5
- 238000010168 coupling process Methods 0.000 claims description 5
- 238000005859 coupling reaction Methods 0.000 claims description 5
- 230000001939 inductive effect Effects 0.000 claims description 5
- 238000012544 monitoring process Methods 0.000 claims description 3
- 230000003068 static effect Effects 0.000 claims description 2
- 238000010521 absorption reaction Methods 0.000 claims 1
- 238000009713 electroplating Methods 0.000 claims 1
- 238000007789 sealing Methods 0.000 claims 1
- 230000002159 abnormal effect Effects 0.000 abstract description 17
- 239000000523 sample Substances 0.000 description 46
- 238000005259 measurement Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 239000007789 gas Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 238000009616 inductively coupled plasma Methods 0.000 description 4
- 238000011109 contamination Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910052770 Uranium Inorganic materials 0.000 description 2
- 229940037003 alum Drugs 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 229910001385 heavy metal Inorganic materials 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000011835 investigation Methods 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000009489 vacuum treatment Methods 0.000 description 1
Classifications
-
- A—HUMAN NECESSITIES
- A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
- A47J—KITCHEN EQUIPMENT; COFFEE MILLS; SPICE MILLS; APPARATUS FOR MAKING BEVERAGES
- A47J37/00—Baking; Roasting; Grilling; Frying
- A47J37/04—Roasting apparatus with movably-mounted food supports or with movable heating implements; Spits
- A47J37/041—Roasting apparatus with movably-mounted food supports or with movable heating implements; Spits with food supports rotating about a horizontal axis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
- H01J37/32706—Polarising the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- A—HUMAN NECESSITIES
- A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
- A47J—KITCHEN EQUIPMENT; COFFEE MILLS; SPICE MILLS; APPARATUS FOR MAKING BEVERAGES
- A47J37/00—Baking; Roasting; Grilling; Frying
- A47J37/06—Roasters; Grills; Sandwich grills
- A47J37/07—Roasting devices for outdoor use; Barbecues
- A47J37/0786—Accessories
- A47J2037/0795—Adjustable food supports, e.g. for height adjustment
-
- A—HUMAN NECESSITIES
- A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
- A47J—KITCHEN EQUIPMENT; COFFEE MILLS; SPICE MILLS; APPARATUS FOR MAKING BEVERAGES
- A47J37/00—Baking; Roasting; Grilling; Frying
- A47J37/06—Roasters; Grills; Sandwich grills
- A47J37/07—Roasting devices for outdoor use; Barbecues
- A47J37/0704—Roasting devices for outdoor use; Barbecues with horizontal fire box
- A47J37/0713—Roasting devices for outdoor use; Barbecues with horizontal fire box with gas burners
-
- A—HUMAN NECESSITIES
- A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
- A47J—KITCHEN EQUIPMENT; COFFEE MILLS; SPICE MILLS; APPARATUS FOR MAKING BEVERAGES
- A47J37/00—Baking; Roasting; Grilling; Frying
- A47J37/06—Roasters; Grills; Sandwich grills
- A47J37/07—Roasting devices for outdoor use; Barbecues
- A47J37/0745—Roasting devices for outdoor use; Barbecues with motor-driven food supports
-
- A—HUMAN NECESSITIES
- A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
- A47J—KITCHEN EQUIPMENT; COFFEE MILLS; SPICE MILLS; APPARATUS FOR MAKING BEVERAGES
- A47J37/00—Baking; Roasting; Grilling; Frying
- A47J37/06—Roasters; Grills; Sandwich grills
- A47J37/07—Roasting devices for outdoor use; Barbecues
- A47J37/0786—Accessories
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Food Science & Technology (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005022112A JP4468194B2 (ja) | 2005-01-28 | 2005-01-28 | プラズマ処理方法およびプラズマ処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200627540A TW200627540A (en) | 2006-08-01 |
| TWI290345B true TWI290345B (en) | 2007-11-21 |
Family
ID=36756289
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094105872A TWI290345B (en) | 2005-01-28 | 2005-02-25 | Plasma processing method and plasma processing apparatus |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7224568B2 (enExample) |
| JP (1) | JP4468194B2 (enExample) |
| KR (1) | KR100757528B1 (enExample) |
| TW (1) | TWI290345B (enExample) |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5094002B2 (ja) | 2005-09-06 | 2012-12-12 | ルネサスエレクトロニクス株式会社 | プラズマ処理装置およびその異常放電抑止方法 |
| JP5372419B2 (ja) * | 2008-06-25 | 2013-12-18 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置及びプラズマ処理方法 |
| DE102008036766B4 (de) * | 2008-08-07 | 2013-08-01 | Alexander Gschwandtner | Vorrichtung und Verfahren zum Erzeugen dielektrischer Schichten im Mikrowellenplasma |
| US9063356B2 (en) | 2008-09-05 | 2015-06-23 | Japan Display Inc. | Method for repairing display device and apparatus for same |
| US11615941B2 (en) | 2009-05-01 | 2023-03-28 | Advanced Energy Industries, Inc. | System, method, and apparatus for controlling ion energy distribution in plasma processing systems |
| US9767988B2 (en) | 2010-08-29 | 2017-09-19 | Advanced Energy Industries, Inc. | Method of controlling the switched mode ion energy distribution system |
| JP2011187881A (ja) * | 2010-03-11 | 2011-09-22 | Hitachi High-Technologies Corp | プラズマ処理装置および方法 |
| US9685297B2 (en) | 2012-08-28 | 2017-06-20 | Advanced Energy Industries, Inc. | Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system |
| US9875881B2 (en) * | 2013-02-20 | 2018-01-23 | Tokyo Electron Limited | Plasma processing apparatus and plasma processing method |
| JP6357436B2 (ja) | 2014-07-25 | 2018-07-11 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| KR101677748B1 (ko) | 2014-10-29 | 2016-11-29 | 삼성전자 주식회사 | 펄스 플라즈마 장치 및 펄스 플라즈마 장치 구동 방법 |
| US9779919B2 (en) | 2015-01-09 | 2017-10-03 | Hitachi High-Technologies Corporation | Plasma processing apparatus and plasma processing method |
| JP6567943B2 (ja) | 2015-01-09 | 2019-08-28 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
| JP6396822B2 (ja) * | 2015-02-16 | 2018-09-26 | 東京エレクトロン株式会社 | プラズマ処理装置のサセプタの電位を制御する方法 |
| US9824857B2 (en) * | 2016-01-14 | 2017-11-21 | Varian Semiconductor Equipment Associates, Inc. | Method for implantation of semiconductor wafers having high bulk resistivity |
| US10535505B2 (en) * | 2016-11-11 | 2020-01-14 | Lam Research Corporation | Plasma light up suppression |
| US11437221B2 (en) | 2017-11-17 | 2022-09-06 | Advanced Energy Industries, Inc. | Spatial monitoring and control of plasma processing environments |
| TWI792598B (zh) | 2017-11-17 | 2023-02-11 | 新加坡商Aes 全球公司 | 用於在空間域和時間域上控制基板上的電漿處理之系統和方法，及相關的電腦可讀取媒體 |
| US12230476B2 (en) | 2017-11-17 | 2025-02-18 | Advanced Energy Industries, Inc. | Integrated control of a plasma processing system |
| TWI726258B (zh) | 2017-11-17 | 2021-05-01 | 新加坡商Ａｅｓ全球公司 | 用於電漿處理之方法和系統以及相關的非暫時性電腦可讀取媒體 |
| JP2021503702A (ja) | 2017-11-17 | 2021-02-12 | エーイーエス グローバル ホールディングス， プライベート リミテッド | プラズマ処理システムにおける変調供給源の改良された印加 |
| KR102524810B1 (ko) | 2017-12-26 | 2023-04-24 | 삼성전자주식회사 | 반도체 공정의 제어 방법 |
| TWI869392B (zh) * | 2019-04-15 | 2025-01-11 | 美商應用材料股份有限公司 | 處理基板的方法 |
| WO2021011450A1 (en) | 2019-07-12 | 2021-01-21 | Advanced Energy Industries, Inc. | Bias supply with a single controlled switch |
| US12125674B2 (en) | 2020-05-11 | 2024-10-22 | Advanced Energy Industries, Inc. | Surface charge and power feedback and control using a switch mode bias system |
| CN115250648B (zh) * | 2021-02-25 | 2025-11-11 | 株式会社日立高新技术 | 等离子处理装置 |
| JP7648498B2 (ja) * | 2021-10-07 | 2025-03-18 | 東京エレクトロン株式会社 | 制御プログラム、制御方法、及びプラズマ処理装置 |
| US11942309B2 (en) | 2022-01-26 | 2024-03-26 | Advanced Energy Industries, Inc. | Bias supply with resonant switching |
| US11670487B1 (en) | 2022-01-26 | 2023-06-06 | Advanced Energy Industries, Inc. | Bias supply control and data processing |
| US12046448B2 (en) | 2022-01-26 | 2024-07-23 | Advanced Energy Industries, Inc. | Active switch on time control for bias supply |
| US11978613B2 (en) | 2022-09-01 | 2024-05-07 | Advanced Energy Industries, Inc. | Transition control in a bias supply |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5557215A (en) | 1993-05-12 | 1996-09-17 | Tokyo Electron Limited | Self-bias measuring method, apparatus thereof and electrostatic chucking apparatus |
| US5737177A (en) * | 1996-10-17 | 1998-04-07 | Applied Materials, Inc. | Apparatus and method for actively controlling the DC potential of a cathode pedestal |
| US6367413B1 (en) * | 1999-06-15 | 2002-04-09 | Tokyo Electron Limited | Apparatus for monitoring substrate biasing during plasma processing of a substrate |
-
2005
- 2005-01-28 JP JP2005022112A patent/JP4468194B2/ja not_active Expired - Lifetime
- 2005-02-25 TW TW094105872A patent/TWI290345B/zh not_active IP Right Cessation
- 2005-02-28 KR KR1020050016720A patent/KR100757528B1/ko not_active Expired - Lifetime
- 2005-03-02 US US11/069,551 patent/US7224568B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP2006210726A (ja) | 2006-08-10 |
| TW200627540A (en) | 2006-08-01 |
| KR20060087358A (ko) | 2006-08-02 |
| KR100757528B1 (ko) | 2007-09-11 |
| US20060171093A1 (en) | 2006-08-03 |
| JP4468194B2 (ja) | 2010-05-26 |
| US7224568B2 (en) | 2007-05-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |