JP2004140391A5 - - Google Patents

Download PDF

Info

Publication number
JP2004140391A5
JP2004140391A5 JP2003401178A JP2003401178A JP2004140391A5 JP 2004140391 A5 JP2004140391 A5 JP 2004140391A5 JP 2003401178 A JP2003401178 A JP 2003401178A JP 2003401178 A JP2003401178 A JP 2003401178A JP 2004140391 A5 JP2004140391 A5 JP 2004140391A5
Authority
JP
Japan
Prior art keywords
voltage waveform
substrate electrode
voltage
plasma
processing chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2003401178A
Other languages
English (en)
Japanese (ja)
Other versions
JP4653395B2 (ja
JP2004140391A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2003401178A priority Critical patent/JP4653395B2/ja
Priority claimed from JP2003401178A external-priority patent/JP4653395B2/ja
Publication of JP2004140391A publication Critical patent/JP2004140391A/ja
Publication of JP2004140391A5 publication Critical patent/JP2004140391A5/ja
Application granted granted Critical
Publication of JP4653395B2 publication Critical patent/JP4653395B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP2003401178A 2000-09-29 2003-12-01 プラズマ処理装置 Expired - Lifetime JP4653395B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003401178A JP4653395B2 (ja) 2000-09-29 2003-12-01 プラズマ処理装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000302824 2000-09-29
JP2000364537 2000-11-27
JP2003401178A JP4653395B2 (ja) 2000-09-29 2003-12-01 プラズマ処理装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2001286051A Division JP3563054B2 (ja) 2000-09-29 2001-09-20 プラズマ処理装置および方法

Publications (3)

Publication Number Publication Date
JP2004140391A JP2004140391A (ja) 2004-05-13
JP2004140391A5 true JP2004140391A5 (enExample) 2008-10-23
JP4653395B2 JP4653395B2 (ja) 2011-03-16

Family

ID=32475092

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003401178A Expired - Lifetime JP4653395B2 (ja) 2000-09-29 2003-12-01 プラズマ処理装置

Country Status (1)

Country Link
JP (1) JP4653395B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4607930B2 (ja) 2007-09-14 2011-01-05 株式会社東芝 プラズマ処理装置およびプラズマ処理方法
JP2012104382A (ja) * 2010-11-10 2012-05-31 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法並びにプラズマ処理のバイアス電圧決定方法
KR101111963B1 (ko) 2010-12-02 2012-02-14 한국기초과학지원연구원 축전결합 플라즈마원의 바이어스 위상제어에 의한 포텐셜 분석 방법
US8598040B2 (en) * 2011-09-06 2013-12-03 Lam Research Corporation ETCH process for 3D flash structures
KR102201886B1 (ko) * 2013-06-11 2021-01-12 세메스 주식회사 기판 처리 장치 및 플라즈마 발생 방법
US10546724B2 (en) 2017-05-10 2020-01-28 Mks Instruments, Inc. Pulsed, bidirectional radio frequency source/load
KR20240073030A (ko) * 2021-10-04 2024-05-24 램 리써치 코포레이션 유도 커플링 플라즈마 (inductively coupled plasma) 에서 이온 에너지를 향상시키고 이온 에너지 확산을 감소시키기 위한 방법 및 장치

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06338476A (ja) * 1993-03-31 1994-12-06 Tokyo Electron Ltd プラズマ処理方法
JPH07249614A (ja) * 1994-03-10 1995-09-26 Kokusai Electric Co Ltd プラズマエッチング方法及びその装置
US6252354B1 (en) * 1996-11-04 2001-06-26 Applied Materials, Inc. RF tuning method for an RF plasma reactor using frequency servoing and power, voltage, current or DI/DT control

Similar Documents

Publication Publication Date Title
JP2006210726A5 (enExample)
EP2479783A3 (en) Plasma processing apparatus and method
EP1973140A3 (en) Plasma species and uniformity control through pulsed VHF operation
JP2007250755A5 (enExample)
WO2003049169A1 (fr) Procede de gravure au plasma et dispositif de gravure au plasma
JP2007501530A5 (enExample)
TW200644117A (en) Plasma processing apparatus and plasma processing method
WO2010122459A3 (en) Method and apparatus for high aspect ratio dielectric etch
JP2007503724A5 (enExample)
TW200739719A (en) Plasma etching method and computer-readable storage medium
JP2004047696A5 (enExample)
WO2010008711A3 (en) Cathode with inner and outer electrodes at different heights
WO2004012235A3 (en) Atmospheric pressure plasma processing reactor
TW201533837A (zh) 於載置台吸附被吸附物之方法及處理裝置
JP2016213358A5 (enExample)
JP2007150012A5 (enExample)
JP2019061849A5 (enExample)
JP2004140391A5 (enExample)
BRPI0307889B8 (pt) processo de limpeza contínua de um material revestido por uma substância orgânica e dispositivo para realização do processo
JP2006032759A5 (enExample)
JP2000357683A5 (enExample)
JP2007242870A5 (enExample)
JP2020177959A5 (ja) クリーニング方法及びプラズマ処理装置
JP2000200698A5 (enExample)
CN113035677B (zh) 等离子体处理设备以及等离子体处理方法