JP2004140391A5 - - Google Patents
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- Publication number
- JP2004140391A5 JP2004140391A5 JP2003401178A JP2003401178A JP2004140391A5 JP 2004140391 A5 JP2004140391 A5 JP 2004140391A5 JP 2003401178 A JP2003401178 A JP 2003401178A JP 2003401178 A JP2003401178 A JP 2003401178A JP 2004140391 A5 JP2004140391 A5 JP 2004140391A5
- Authority
- JP
- Japan
- Prior art keywords
- voltage waveform
- substrate electrode
- voltage
- plasma
- processing chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 210000002381 Plasma Anatomy 0.000 claims 5
- 239000000758 substrate Substances 0.000 claims 5
- 238000003672 processing method Methods 0.000 claims 2
- 239000000463 material Substances 0.000 claims 1
Claims (4)
- プラズマが生成される処理室内で試料をプラズマ処理する方法において、前記試料が配置される試料台に高周波電圧を印加し、かつ、前記高周波電圧の電圧波形を任意の電圧で平坦化することを特徴とするプラズマ処理方法。
- 請求項１記載のプラズマ処理方法において、前記基板電極に印加する高周波電圧の正負両電圧の少なくとも一方の電圧波形を平坦化するプラズマ処理方法。
- 真空排気装置が接続され内部を減圧可能な処理室と、該処理室内へガスを供給するガス供給装置と、前記処理室内に設けられ被処理材を載置可能な基板電極と、該基板電極へ整合器を介して接続された高周波電源と、前記整合器内または前記基板電極と前記整合器との間に設けられた電圧波形を平坦化する電圧波形制御回路とを含むことを特徴とするプラズマ処理装置。
- 請求項３記載のプラズマ処理装置において、前記電圧波形制御回路は前記基板電極に印加される高周波電圧の正負両電圧の少なくとも一方の電圧波形を平坦化可能であるプラズマ処理装置。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003401178A JP4653395B2 (ja) | 2000-09-29 | 2003-12-01 | プラズマ処理装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000302824 | 2000-09-29 | ||
| JP2000364537 | 2000-11-27 | ||
| JP2003401178A JP4653395B2 (ja) | 2000-09-29 | 2003-12-01 | プラズマ処理装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001286051A Division JP3563054B2 (ja) | 2000-09-29 | 2001-09-20 | プラズマ処理装置および方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004140391A JP2004140391A (ja) | 2004-05-13 |
| JP2004140391A5 true JP2004140391A5 (ja) | 2008-10-23 |
| JP4653395B2 JP4653395B2 (ja) | 2011-03-16 |
Family
ID=32475092
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003401178A Expired - Lifetime JP4653395B2 (ja) | 2000-09-29 | 2003-12-01 | プラズマ処理装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4653395B2 (ja) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4607930B2 (ja) * | 2007-09-14 | 2011-01-05 | 株式会社東芝 | プラズマ処理装置およびプラズマ処理方法 |
| JP2012104382A (ja) * | 2010-11-10 | 2012-05-31 | Tokyo Electron Ltd | プラズマ処理装置及びプラズマ処理方法並びにプラズマ処理のバイアス電圧決定方法 |
| KR101111963B1 (ko) | 2010-12-02 | 2012-02-14 | 한국기초과학지원연구원 | 축전결합 플라즈마원의 바이어스 위상제어에 의한 포텐셜 분석 방법 |
| US8598040B2 (en) * | 2011-09-06 | 2013-12-03 | Lam Research Corporation | ETCH process for 3D flash structures |
| KR102201886B1 (ko) * | 2013-06-11 | 2021-01-12 | 세메스 주식회사 | 기판 처리 장치 및 플라즈마 발생 방법 |
| US10546724B2 (en) | 2017-05-10 | 2020-01-28 | Mks Instruments, Inc. | Pulsed, bidirectional radio frequency source/load |
| WO2023059990A1 (en) * | 2021-10-04 | 2023-04-13 | Lam Research Corporation | A method and apparatus for enhancing ion energy and reducing ion energy spread in an inductively coupled plasma |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06338476A (ja) * | 1993-03-31 | 1994-12-06 | Tokyo Electron Ltd | プラズマ処理方法 |
| JPH07249614A (ja) * | 1994-03-10 | 1995-09-26 | Kokusai Electric Co Ltd | プラズマエッチング方法及びその装置 |
| US6252354B1 (en) * | 1996-11-04 | 2001-06-26 | Applied Materials, Inc. | RF tuning method for an RF plasma reactor using frequency servoing and power, voltage, current or DI/DT control |
-
2003
- 2003-12-01 JP JP2003401178A patent/JP4653395B2/ja not_active Expired - Lifetime
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