JP4653395B2 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
JP4653395B2
JP4653395B2 JP2003401178A JP2003401178A JP4653395B2 JP 4653395 B2 JP4653395 B2 JP 4653395B2 JP 2003401178 A JP2003401178 A JP 2003401178A JP 2003401178 A JP2003401178 A JP 2003401178A JP 4653395 B2 JP4653395 B2 JP 4653395B2
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voltage
plasma
frequency
voltage waveform
substrate electrode
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JP2004140391A (ja
JP2004140391A5 (enExample
Inventor
誠浩 角屋
尚輝 安井
仁 田村
成一 渡辺
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Hitachi Ltd
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Hitachi Ltd
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JP2003401178A 2000-09-29 2003-12-01 プラズマ処理装置 Expired - Lifetime JP4653395B2 (ja)

Priority Applications (1)

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JP2003401178A JP4653395B2 (ja) 2000-09-29 2003-12-01 プラズマ処理装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000302824 2000-09-29
JP2000364537 2000-11-27
JP2003401178A JP4653395B2 (ja) 2000-09-29 2003-12-01 プラズマ処理装置

Related Parent Applications (1)

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JP2001286051A Division JP3563054B2 (ja) 2000-09-29 2001-09-20 プラズマ処理装置および方法

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JP2004140391A JP2004140391A (ja) 2004-05-13
JP2004140391A5 JP2004140391A5 (enExample) 2008-10-23
JP4653395B2 true JP4653395B2 (ja) 2011-03-16

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JP2003401178A Expired - Lifetime JP4653395B2 (ja) 2000-09-29 2003-12-01 プラズマ処理装置

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Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4607930B2 (ja) 2007-09-14 2011-01-05 株式会社東芝 プラズマ処理装置およびプラズマ処理方法
JP2012104382A (ja) * 2010-11-10 2012-05-31 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法並びにプラズマ処理のバイアス電圧決定方法
KR101111963B1 (ko) 2010-12-02 2012-02-14 한국기초과학지원연구원 축전결합 플라즈마원의 바이어스 위상제어에 의한 포텐셜 분석 방법
US8598040B2 (en) * 2011-09-06 2013-12-03 Lam Research Corporation ETCH process for 3D flash structures
KR102201886B1 (ko) * 2013-06-11 2021-01-12 세메스 주식회사 기판 처리 장치 및 플라즈마 발생 방법
US10546724B2 (en) 2017-05-10 2020-01-28 Mks Instruments, Inc. Pulsed, bidirectional radio frequency source/load
KR20240073030A (ko) * 2021-10-04 2024-05-24 램 리써치 코포레이션 유도 커플링 플라즈마 (inductively coupled plasma) 에서 이온 에너지를 향상시키고 이온 에너지 확산을 감소시키기 위한 방법 및 장치

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06338476A (ja) * 1993-03-31 1994-12-06 Tokyo Electron Ltd プラズマ処理方法
JPH07249614A (ja) * 1994-03-10 1995-09-26 Kokusai Electric Co Ltd プラズマエッチング方法及びその装置
US6252354B1 (en) * 1996-11-04 2001-06-26 Applied Materials, Inc. RF tuning method for an RF plasma reactor using frequency servoing and power, voltage, current or DI/DT control

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