JP2006032759A5 - - Google Patents

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Publication number
JP2006032759A5
JP2006032759A5 JP2004211243A JP2004211243A JP2006032759A5 JP 2006032759 A5 JP2006032759 A5 JP 2006032759A5 JP 2004211243 A JP2004211243 A JP 2004211243A JP 2004211243 A JP2004211243 A JP 2004211243A JP 2006032759 A5 JP2006032759 A5 JP 2006032759A5
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JP
Japan
Prior art keywords
processing apparatus
frequency
discharge
plasma processing
generating
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Application number
JP2004211243A
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English (en)
Japanese (ja)
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JP2006032759A (ja
JP4523352B2 (ja
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Priority to JP2004211243A priority Critical patent/JP4523352B2/ja
Priority claimed from JP2004211243A external-priority patent/JP4523352B2/ja
Priority to US11/182,793 priority patent/US8496781B2/en
Publication of JP2006032759A publication Critical patent/JP2006032759A/ja
Publication of JP2006032759A5 publication Critical patent/JP2006032759A5/ja
Application granted granted Critical
Publication of JP4523352B2 publication Critical patent/JP4523352B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2004211243A 2004-07-20 2004-07-20 プラズマ処理装置 Expired - Fee Related JP4523352B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2004211243A JP4523352B2 (ja) 2004-07-20 2004-07-20 プラズマ処理装置
US11/182,793 US8496781B2 (en) 2004-07-20 2005-07-18 Plasma processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004211243A JP4523352B2 (ja) 2004-07-20 2004-07-20 プラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2006032759A JP2006032759A (ja) 2006-02-02
JP2006032759A5 true JP2006032759A5 (enExample) 2007-06-21
JP4523352B2 JP4523352B2 (ja) 2010-08-11

Family

ID=35655892

Family Applications (1)

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JP2004211243A Expired - Fee Related JP4523352B2 (ja) 2004-07-20 2004-07-20 プラズマ処理装置

Country Status (2)

Country Link
US (1) US8496781B2 (enExample)
JP (1) JP4523352B2 (enExample)

Families Citing this family (11)

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CN104821269B (zh) * 2006-05-22 2017-05-10 吉恩株式会社 感应耦合等离子体反应器
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JP4943879B2 (ja) * 2007-01-31 2012-05-30 株式会社日立ハイテクノロジーズ プラズマ処理装置
US20170213734A9 (en) * 2007-03-30 2017-07-27 Alexei Marakhtanov Multifrequency capacitively coupled plasma etch chamber
US8133359B2 (en) * 2007-11-16 2012-03-13 Advanced Energy Industries, Inc. Methods and apparatus for sputtering deposition using direct current
US9039871B2 (en) 2007-11-16 2015-05-26 Advanced Energy Industries, Inc. Methods and apparatus for applying periodic voltage using direct current
JP2017212361A (ja) * 2016-05-26 2017-11-30 東京エレクトロン株式会社 プラズマ処理装置及びパーティクル付着抑制方法
JP7345382B2 (ja) * 2018-12-28 2023-09-15 東京エレクトロン株式会社 プラズマ処理装置及び制御方法
US11508554B2 (en) * 2019-01-24 2022-11-22 Applied Materials, Inc. High voltage filter assembly
CN118737783A (zh) * 2023-03-28 2024-10-01 北京北方华创微电子装备有限公司 一种半导体工艺设备

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JP4514911B2 (ja) * 2000-07-19 2010-07-28 東京エレクトロン株式会社 プラズマ処理装置
JP3621900B2 (ja) 2000-09-12 2005-02-16 株式会社日立製作所 プラズマ処理装置および方法
JP4819244B2 (ja) * 2001-05-15 2011-11-24 東京エレクトロン株式会社 プラズマ処理装置
JP4070974B2 (ja) * 2001-10-17 2008-04-02 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US6706138B2 (en) * 2001-08-16 2004-03-16 Applied Materials Inc. Adjustable dual frequency voltage dividing plasma reactor
JP4330315B2 (ja) * 2002-03-29 2009-09-16 東京エレクトロン株式会社 プラズマ処理装置
US8236105B2 (en) * 2004-04-08 2012-08-07 Applied Materials, Inc. Apparatus for controlling gas flow in a semiconductor substrate processing chamber

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