KR101883246B1 - 플라스마 처리 장치 및 시료의 이탈 방법 - Google Patents

플라스마 처리 장치 및 시료의 이탈 방법 Download PDF

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KR101883246B1
KR101883246B1 KR1020170004058A KR20170004058A KR101883246B1 KR 101883246 B1 KR101883246 B1 KR 101883246B1 KR 1020170004058 A KR1020170004058 A KR 1020170004058A KR 20170004058 A KR20170004058 A KR 20170004058A KR 101883246 B1 KR101883246 B1 KR 101883246B1
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sample
plasma
voltage
frequency power
wafer
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Korean (ko)
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KR20180015558A (ko
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마사키 이시구로
마사히로 스미야
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가부시키가이샤 히다치 하이테크놀로지즈
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H10P72/72—
    • H10P72/722—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
KR1020170004058A 2016-08-03 2017-01-11 플라스마 처리 장치 및 시료의 이탈 방법 Active KR101883246B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016152424A JP6708358B2 (ja) 2016-08-03 2016-08-03 プラズマ処理装置及び試料の離脱方法
JPJP-P-2016-152424 2016-08-03

Publications (2)

Publication Number Publication Date
KR20180015558A KR20180015558A (ko) 2018-02-13
KR101883246B1 true KR101883246B1 (ko) 2018-08-30

Family

ID=61072045

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020170004058A Active KR101883246B1 (ko) 2016-08-03 2017-01-11 플라스마 처리 장치 및 시료의 이탈 방법

Country Status (4)

Country Link
US (2) US10825700B2 (enExample)
JP (1) JP6708358B2 (enExample)
KR (1) KR101883246B1 (enExample)
TW (1) TWI660422B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7059064B2 (ja) * 2018-03-26 2022-04-25 株式会社日立ハイテク プラズマ処理装置
CN112885691B (zh) * 2019-11-29 2024-05-14 中微半导体设备(上海)股份有限公司 等离子体处理装置及其稳定性优化的方法
JP7526645B2 (ja) 2020-01-29 2024-08-01 東京エレクトロン株式会社 基板処理方法及び基板処理システム
CN115250648B (zh) * 2021-02-25 2025-11-11 株式会社日立高新技术 等离子处理装置
CN115020311B (zh) * 2022-05-27 2025-12-09 江苏鲁汶仪器股份有限公司 一种残余电荷释放方法
JP7612889B2 (ja) * 2022-08-03 2025-01-14 株式会社日立ハイテク ウエハ処理方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008251676A (ja) * 2007-03-29 2008-10-16 Tokyo Electron Ltd プラズマ処理方法及び装置
JP2015072825A (ja) * 2013-10-03 2015-04-16 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP2016032096A (ja) * 2014-07-25 2016-03-07 株式会社日立ハイテクノロジーズ プラズマ処理装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW334609B (en) 1996-09-19 1998-06-21 Hitachi Ltd Electrostatic chuck, method and device for processing sanyle use the same
KR19980024679U (ko) * 1996-10-30 1998-07-25 홍성기 광고용 녹화 카셋테이프
US5933314A (en) * 1997-06-27 1999-08-03 Lam Research Corp. Method and an apparatus for offsetting plasma bias voltage in bi-polar electro-static chucks
JPH11111826A (ja) * 1997-10-02 1999-04-23 Sumitomo Metal Ind Ltd 静電チャックにおける試料の脱離方法
JPH11233605A (ja) * 1998-02-17 1999-08-27 Mitsubishi Electric Corp 静電チャックステージ
GB9812850D0 (en) * 1998-06-16 1998-08-12 Surface Tech Sys Ltd A method and apparatus for dechucking
US6057244A (en) * 1998-07-31 2000-05-02 Applied Materials, Inc. Method for improved sputter etch processing
US20030236004A1 (en) * 2002-06-24 2003-12-25 Applied Materials, Inc. Dechucking with N2/O2 plasma
JP2004047511A (ja) * 2002-07-08 2004-02-12 Tokyo Electron Ltd 離脱方法、処理方法、静電吸着装置および処理装置
US7292428B2 (en) * 2005-04-26 2007-11-06 Applied Materials, Inc. Electrostatic chuck with smart lift-pin mechanism for a plasma reactor
JP2007073568A (ja) * 2005-09-05 2007-03-22 Hitachi High-Technologies Corp プラズマ処理装置
DE602006021238D1 (de) * 2006-10-31 2011-05-19 Byd Co Ltd Regelungsverfahren für einen elektromotor
TWI460439B (zh) * 2008-07-07 2014-11-11 蘭姆研究公司 用來辨識電漿處理系統之處理腔室內的解除吸附情形之信號擾動特性的方法及裝置、及其電腦可讀儲存媒體
JP6013740B2 (ja) 2012-02-03 2016-10-25 東京エレクトロン株式会社 離脱制御方法及びプラズマ処理装置の制御装置
JP6132497B2 (ja) * 2012-09-12 2017-05-24 東京エレクトロン株式会社 離脱制御方法及びプラズマ処理装置
US10535566B2 (en) * 2016-04-28 2020-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufacture

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008251676A (ja) * 2007-03-29 2008-10-16 Tokyo Electron Ltd プラズマ処理方法及び装置
JP2015072825A (ja) * 2013-10-03 2015-04-16 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP2016032096A (ja) * 2014-07-25 2016-03-07 株式会社日立ハイテクノロジーズ プラズマ処理装置

Also Published As

Publication number Publication date
US12148633B2 (en) 2024-11-19
US20180040491A1 (en) 2018-02-08
US10825700B2 (en) 2020-11-03
TW201816883A (zh) 2018-05-01
JP6708358B2 (ja) 2020-06-10
TWI660422B (zh) 2019-05-21
JP2018022756A (ja) 2018-02-08
US20210013060A1 (en) 2021-01-14
KR20180015558A (ko) 2018-02-13

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