SG10201609929QA - Etching compositions and methods for using same - Google Patents

Etching compositions and methods for using same

Info

Publication number
SG10201609929QA
SG10201609929QA SG10201609929QA SG10201609929QA SG10201609929QA SG 10201609929Q A SG10201609929Q A SG 10201609929QA SG 10201609929Q A SG10201609929Q A SG 10201609929QA SG 10201609929Q A SG10201609929Q A SG 10201609929QA SG 10201609929Q A SG10201609929Q A SG 10201609929QA
Authority
SG
Singapore
Prior art keywords
methods
same
etching compositions
etching
compositions
Prior art date
Application number
SG10201609929QA
Other languages
English (en)
Inventor
Dar Liu Wen
Lee Yi-Chia
Chen Tianniu
Mebrahtu Thomas
Wu Aiping
Chia Kai Tseng Edward
Everad Parris Gene
Original Assignee
Air Prod & Chem
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Prod & Chem filed Critical Air Prod & Chem
Publication of SG10201609929QA publication Critical patent/SG10201609929QA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30608—Anisotropic liquid etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02019—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
SG10201609929QA 2015-11-25 2016-11-25 Etching compositions and methods for using same SG10201609929QA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201562259870P 2015-11-25 2015-11-25
US201662300382P 2016-02-26 2016-02-26
US15/357,527 US10400167B2 (en) 2015-11-25 2016-11-21 Etching compositions and methods for using same

Publications (1)

Publication Number Publication Date
SG10201609929QA true SG10201609929QA (en) 2017-06-29

Family

ID=58720440

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201609929QA SG10201609929QA (en) 2015-11-25 2016-11-25 Etching compositions and methods for using same

Country Status (6)

Country Link
US (1) US10400167B2 (ko)
JP (1) JP6577446B2 (ko)
KR (1) KR102055788B1 (ko)
CN (1) CN107527808B (ko)
SG (1) SG10201609929QA (ko)
TW (1) TWI598430B (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11035044B2 (en) 2017-01-23 2021-06-15 Versum Materials Us, Llc Etching solution for tungsten and GST films

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108885412B (zh) * 2016-03-31 2022-04-05 富士胶片株式会社 半导体制造用处理液及图案形成方法
WO2017175856A1 (ja) * 2016-04-08 2017-10-12 富士フイルム株式会社 処理液、その製造方法、パターン形成方法及び電子デバイスの製造方法
US11186771B2 (en) * 2017-06-05 2021-11-30 Versum Materials Us, Llc Etching solution for selectively removing silicon nitride during manufacture of a semiconductor device
TWI649454B (zh) * 2017-11-10 2019-02-01 關東鑫林科技股份有限公司 蝕刻液組成物及使用該蝕刻液組成物之蝕刻方法
US10934485B2 (en) * 2017-08-25 2021-03-02 Versum Materials Us, Llc Etching solution for selectively removing silicon over silicon-germanium alloy from a silicon-germanium/ silicon stack during manufacture of a semiconductor device
US10879076B2 (en) * 2017-08-25 2020-12-29 Versum Materials Us, Llc Etching solution for selectively removing silicon-germanium alloy from a silicon-germanium/silicon stack during manufacture of a semiconductor device
US20190103282A1 (en) * 2017-09-29 2019-04-04 Versum Materials Us, Llc Etching Solution for Simultaneously Removing Silicon and Silicon-Germanium Alloy From a Silicon-Germanium/Silicon Stack During Manufacture of a Semiconductor Device
US10889757B2 (en) 2017-10-19 2021-01-12 Fujifilm Electronic Materials U.S.A., Inc. Etching compositions
TWI672360B (zh) * 2018-01-04 2019-09-21 才將科技股份有限公司 具有針對兩種晶格方向低選擇比（Ｓｉ（１００）／Ｓｉ（１１１））及低二氧化矽蝕刻率之矽蝕刻劑組合物
US10934484B2 (en) * 2018-03-09 2021-03-02 Versum Materials Us, Llc Etching solution for selectively removing silicon-germanium alloy from a silicon-germanium/ germanium stack during manufacture of a semiconductor device
JP7128948B2 (ja) * 2018-07-06 2022-08-31 インテグリス・インコーポレーテッド 材料を選択的にエッチングするための改善
JP7170578B2 (ja) * 2018-08-31 2022-11-14 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
US11177183B2 (en) * 2018-09-19 2021-11-16 Taiwan Semiconductor Manufacturing Co., Ltd. Thickness measurement system and method
US11180697B2 (en) * 2018-11-19 2021-11-23 Versum Materials Us, Llc Etching solution having silicon oxide corrosion inhibitor and method of using the same
TWI683362B (zh) * 2018-12-17 2020-01-21 許富翔 矽鰭片結構的修整方法
WO2020129737A1 (ja) * 2018-12-18 2020-06-25 株式会社トクヤマ シリコンエッチング液
KR20200086180A (ko) 2019-01-08 2020-07-16 동우 화인켐 주식회사 실리콘 막 식각액 조성물 및 이를 사용한 패턴 형성 방법
KR20210111289A (ko) * 2019-01-11 2021-09-10 버슘머트리얼즈 유에스, 엘엘씨 산화하프늄 부식 억제제
KR102444014B1 (ko) 2019-02-05 2022-09-15 가부시키가이샤 도쿠야마 실리콘 에칭액 및 상기 에칭액을 이용한 실리콘 디바이스의 제조방법
WO2020185745A1 (en) * 2019-03-11 2020-09-17 Versum Materials Us, Llc Etching solution and method for aluminum nitride
TWI795572B (zh) * 2019-06-12 2023-03-11 關東鑫林科技股份有限公司 蝕刻組成物
WO2020257103A1 (en) * 2019-06-19 2020-12-24 Versum Materials Us, Llc Cleaning composition for semiconductor substrates
CN112480928A (zh) * 2019-09-11 2021-03-12 利绅科技股份有限公司 硅蚀刻组成物及其作用于硅基材的蚀刻方法
US20230002675A1 (en) * 2019-12-20 2023-01-05 Versum Materials Us, Llc CO/CU Selective Wet Etchant
US20210269716A1 (en) * 2020-02-27 2021-09-02 Tokuyama Corporation Silicon Etching Solution, Method for Manufacturing Silicon Device Using Same, and Substrate Treatment Method
US20230313041A1 (en) * 2022-03-10 2023-10-05 Fujifilm Electronic Materials U.S.A., Inc. Etching compositions
WO2023230394A1 (en) 2022-05-23 2023-11-30 Versum Materials Us, Llc Formulated alkaline chemistry for polysilicon exhume
CN115011348B (zh) * 2022-06-30 2023-12-29 湖北兴福电子材料股份有限公司 一种氮化铝蚀刻液及其应用
WO2024062877A1 (ja) * 2022-09-21 2024-03-28 富士フイルム株式会社 薬液、処理方法

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5567574A (en) 1995-01-10 1996-10-22 Mitsubishi Gas Chemical Company, Inc. Removing agent composition for photoresist and method of removing
JP2000164597A (ja) 1998-11-27 2000-06-16 Showa Denko Kk サイドウォール除去液
JP3738992B2 (ja) * 2001-12-27 2006-01-25 東京応化工業株式会社 ホトレジスト用剥離液
US7200321B2 (en) 2002-04-19 2007-04-03 Tivo Inc. Method and apparatus for creating an expanded functionality digital video disc
US7442675B2 (en) * 2003-06-18 2008-10-28 Tokyo Ohka Kogyo Co., Ltd. Cleaning composition and method of cleaning semiconductor substrate
JP3994992B2 (ja) * 2004-08-13 2007-10-24 三菱瓦斯化学株式会社 シリコン微細加工に用いる異方性エッチング剤組成物及びエッチング方法
JP4684869B2 (ja) 2004-11-30 2011-05-18 株式会社トクヤマ シリコンエッチング液
KR101331747B1 (ko) * 2005-01-27 2013-11-20 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 반도체 기판 처리 조성물
US7923423B2 (en) * 2005-01-27 2011-04-12 Advanced Technology Materials, Inc. Compositions for processing of semiconductor substrates
WO2006127885A1 (en) * 2005-05-26 2006-11-30 Advanced Technology Materials, Inc. Copper passivating post-chemical mechanical polishing cleaning composition and method of use
WO2007020979A1 (ja) * 2005-08-19 2007-02-22 Nissan Chemical Industries, Ltd. ハードマスクの除去用組成物及び除去方法
US7528072B2 (en) * 2006-04-20 2009-05-05 Texas Instruments Incorporated Crystallographic preferential etch to define a recessed-region for epitaxial growth
JP2009075285A (ja) 2007-09-20 2009-04-09 Fujifilm Corp 半導体デバイスの剥離液、及び、剥離方法
CN101884095B (zh) 2007-10-04 2012-06-27 三菱瓦斯化学株式会社 硅蚀刻液和蚀刻方法
US7851313B1 (en) 2007-11-09 2010-12-14 Xilinx, Inc. Semiconductor device and process for improved etch control of strained silicon alloy trenches
JP5302551B2 (ja) 2008-02-28 2013-10-02 林純薬工業株式会社 シリコン異方性エッチング液組成物
JP5086893B2 (ja) 2008-05-26 2012-11-28 花王株式会社 半導体デバイス用基板用の洗浄液
US8110535B2 (en) * 2009-08-05 2012-02-07 Air Products And Chemicals, Inc. Semi-aqueous stripping and cleaning formulation for metal substrate and methods for using same
US7994062B2 (en) * 2009-10-30 2011-08-09 Sachem, Inc. Selective silicon etch process
DE102010063772B4 (de) * 2010-12-21 2016-02-04 GLOBALFOUNDRIES Dresden Module One Ltd. Liability Company & Co. KG Verfahren zum Einbetten einer sigma-förmigen Halbleiterlegierung in Transistoren durch Anwenden einer gleichmäßigen Oxidschicht vor dem Ätzen der Aussparungen
KR20120108338A (ko) * 2011-03-23 2012-10-05 삼성전자주식회사 반도체 소자의 제조방법
CN102881656B (zh) 2011-07-15 2015-06-17 中芯国际集成电路制造(北京)有限公司 半导体器件及其制造方法
CN102931084B (zh) * 2011-08-10 2015-03-04 中芯国际集成电路制造(北京)有限公司 半导体器件的制造方法
US9263337B2 (en) * 2011-11-02 2016-02-16 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufacture
US9536730B2 (en) * 2012-10-23 2017-01-03 Air Products And Chemicals, Inc. Cleaning formulations
CN103247524B (zh) * 2013-04-28 2016-03-30 上海华力微电子有限公司 ∑形凹槽的制作方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11035044B2 (en) 2017-01-23 2021-06-15 Versum Materials Us, Llc Etching solution for tungsten and GST films

Also Published As

Publication number Publication date
US10400167B2 (en) 2019-09-03
JP6577446B2 (ja) 2019-09-18
CN107527808B (zh) 2020-10-16
US20170145311A1 (en) 2017-05-25
CN107527808A (zh) 2017-12-29
JP2017108122A (ja) 2017-06-15
TWI598430B (zh) 2017-09-11
KR20170066244A (ko) 2017-06-14
TW201726895A (zh) 2017-08-01
KR102055788B1 (ko) 2019-12-13

Similar Documents

Publication Publication Date Title
HK1257295A1 (zh) 用於免疫腫瘤學的組合物和方法
SG10201609929QA (en) Etching compositions and methods for using same
HK1252358A1 (zh) 用於確定倍性的方法及組合物
GB2546350B (en) Compositions and methods
EP3379935A4 (en) METHOD AND COMPOSITIONS FOR REDUCING VANCOMYCIN RESISTANT ENTEROKOKKEN
IL247843A0 (en) Engraving preparation
GB2535253B (en) Compositions and methods
GB201718876D0 (en) Antithrombin-heparin compositions and methods
IL258292A (en) Methods and compositions for reducing metastases
IL246879B (en) Preparations of Epilimod and methods of using them
IL268684A (en) Preparations and methods for immuno-oncology
HK1245158A1 (zh) 阿吡莫德組合物及其使用方法
ZA202104969B (en) Compositions comprising 15-hepe and methods of using the same
IL274524A (en) Preparations and methods for aquaculture
HK1247136A1 (zh) 包含15-hepe的組合物和其使用方法
GB201520255D0 (en) Composition and method
GB2550632B (en) Compositions and uses and methods relating thereto
PL3113774T3 (pl) Kompozycje grapiprantu i sposoby ich zastosowania
ZA201704942B (en) Compositions for improving budbreak and flowering
GB201705626D0 (en) Compositions and methods
ZA201807665B (en) Methods and compositions
GB201715820D0 (en) Compositions and methods
GB201512996D0 (en) Compositions and methods
GB201509420D0 (en) Composition and method
GB201514413D0 (en) Compositions and methods