SG10201609929QA - Etching compositions and methods for using same - Google Patents

Etching compositions and methods for using same

Info

Publication number
SG10201609929QA
SG10201609929QA SG10201609929QA SG10201609929QA SG10201609929QA SG 10201609929Q A SG10201609929Q A SG 10201609929QA SG 10201609929Q A SG10201609929Q A SG 10201609929QA SG 10201609929Q A SG10201609929Q A SG 10201609929QA SG 10201609929Q A SG10201609929Q A SG 10201609929QA
Authority
SG
Singapore
Prior art keywords
methods
same
etching compositions
etching
compositions
Prior art date
Application number
SG10201609929QA
Inventor
Dar Liu Wen
Lee Yi-Chia
Chen Tianniu
Mebrahtu Thomas
Wu Aiping
Chia Kai Tseng Edward
Everad Parris Gene
Original Assignee
Air Prod & Chem
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Prod & Chem filed Critical Air Prod & Chem
Publication of SG10201609929QA publication Critical patent/SG10201609929QA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30608—Anisotropic liquid etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02019—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
SG10201609929QA 2015-11-25 2016-11-25 Etching compositions and methods for using same SG10201609929QA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201562259870P 2015-11-25 2015-11-25
US201662300382P 2016-02-26 2016-02-26
US15/357,527 US10400167B2 (en) 2015-11-25 2016-11-21 Etching compositions and methods for using same

Publications (1)

Publication Number Publication Date
SG10201609929QA true SG10201609929QA (en) 2017-06-29

Family

ID=58720440

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201609929QA SG10201609929QA (en) 2015-11-25 2016-11-25 Etching compositions and methods for using same

Country Status (6)

Country Link
US (1) US10400167B2 (en)
JP (1) JP6577446B2 (en)
KR (1) KR102055788B1 (en)
CN (1) CN107527808B (en)
SG (1) SG10201609929QA (en)
TW (1) TWI598430B (en)

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Publication number Priority date Publication date Assignee Title
US11035044B2 (en) 2017-01-23 2021-06-15 Versum Materials Us, Llc Etching solution for tungsten and GST films

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US11186771B2 (en) * 2017-06-05 2021-11-30 Versum Materials Us, Llc Etching solution for selectively removing silicon nitride during manufacture of a semiconductor device
TWI649454B (en) * 2017-11-10 2019-02-01 關東鑫林科技股份有限公司 Etching solution composition and etching method using the same
US10879076B2 (en) * 2017-08-25 2020-12-29 Versum Materials Us, Llc Etching solution for selectively removing silicon-germanium alloy from a silicon-germanium/silicon stack during manufacture of a semiconductor device
US10934485B2 (en) * 2017-08-25 2021-03-02 Versum Materials Us, Llc Etching solution for selectively removing silicon over silicon-germanium alloy from a silicon-germanium/ silicon stack during manufacture of a semiconductor device
US20190103282A1 (en) * 2017-09-29 2019-04-04 Versum Materials Us, Llc Etching Solution for Simultaneously Removing Silicon and Silicon-Germanium Alloy From a Silicon-Germanium/Silicon Stack During Manufacture of a Semiconductor Device
US10889757B2 (en) 2017-10-19 2021-01-12 Fujifilm Electronic Materials U.S.A., Inc. Etching compositions
TWI672360B (en) * 2018-01-04 2019-09-21 才將科技股份有限公司 Silicon etchant compositions exhibiting both low si(100)/si(111) selectivity and low silicon dioxide etching rate
US10934484B2 (en) * 2018-03-09 2021-03-02 Versum Materials Us, Llc Etching solution for selectively removing silicon-germanium alloy from a silicon-germanium/ germanium stack during manufacture of a semiconductor device
KR102579803B1 (en) * 2018-07-06 2023-09-19 엔테그리스, 아이엔씨. Improvements for selective etching of materials
JP7170578B2 (en) * 2018-08-31 2022-11-14 株式会社Ｓｃｒｅｅｎホールディングス Substrate processing method and substrate processing apparatus
US11177183B2 (en) * 2018-09-19 2021-11-16 Taiwan Semiconductor Manufacturing Co., Ltd. Thickness measurement system and method
US11180697B2 (en) * 2018-11-19 2021-11-23 Versum Materials Us, Llc Etching solution having silicon oxide corrosion inhibitor and method of using the same
TWI683362B (en) * 2018-12-17 2020-01-21 許富翔 Method for trimming si fin structure
KR20210107656A (en) * 2018-12-18 2021-09-01 가부시키가이샤 도쿠야마 silicon etchant
KR20200086180A (en) * 2019-01-08 2020-07-16 동우 화인켐 주식회사 Etchant composition for etching silicon layer and method of forming pattern using the same
SG11202107061TA (en) * 2019-01-11 2021-07-29 Versum Materials Us Llc Hafnium oxide corrosion inhibitor
KR102444014B1 (en) * 2019-02-05 2022-09-15 가부시키가이샤 도쿠야마 Silicon etching solution and method for producing silicon device using the etching solution
JP2020126997A (en) * 2019-02-05 2020-08-20 株式会社トクヤマ Silicon etching solution and method for producing silicon device using that etching solution
EP3959291A4 (en) * 2019-03-11 2023-07-19 Versum Materials US, LLC Etching solution and method for aluminum nitride
TWI795572B (en) * 2019-06-12 2023-03-11 關東鑫林科技股份有限公司 Etching composition
CN114008181A (en) * 2019-06-19 2022-02-01 弗萨姆材料美国有限责任公司 Cleaning composition for semiconductor substrate
CN112480928A (en) * 2019-09-11 2021-03-12 利绅科技股份有限公司 Silicon etching composition and etching method for silicon substrate by using same
US20230002675A1 (en) * 2019-12-20 2023-01-05 Versum Materials Us, Llc CO/CU Selective Wet Etchant
CN113308249B (en) * 2020-02-27 2022-12-30 株式会社德山 Silicon etching solution, method for manufacturing silicon device using the same, and method for processing substrate
JP2021136429A (en) * 2020-02-27 2021-09-13 株式会社トクヤマ Silicon etching solution, manufacturing method of silicon device using etching solution, and substrate processing method
US20230313041A1 (en) * 2022-03-10 2023-10-05 Fujifilm Electronic Materials U.S.A., Inc. Etching compositions
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CN115011348B (en) * 2022-06-30 2023-12-29 湖北兴福电子材料股份有限公司 Aluminum nitride etching solution and application thereof
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Publication number Priority date Publication date Assignee Title
US11035044B2 (en) 2017-01-23 2021-06-15 Versum Materials Us, Llc Etching solution for tungsten and GST films

Also Published As

Publication number Publication date
US20170145311A1 (en) 2017-05-25
JP2017108122A (en) 2017-06-15
KR102055788B1 (en) 2019-12-13
KR20170066244A (en) 2017-06-14
JP6577446B2 (en) 2019-09-18
TWI598430B (en) 2017-09-11
CN107527808B (en) 2020-10-16
TW201726895A (en) 2017-08-01
CN107527808A (en) 2017-12-29
US10400167B2 (en) 2019-09-03

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