SE9700156D0 - Junction termination for Si C Schottky diode - Google Patents
Junction termination for Si C Schottky diodeInfo
- Publication number
- SE9700156D0 SE9700156D0 SE9700156A SE9700156A SE9700156D0 SE 9700156 D0 SE9700156 D0 SE 9700156D0 SE 9700156 A SE9700156 A SE 9700156A SE 9700156 A SE9700156 A SE 9700156A SE 9700156 D0 SE9700156 D0 SE 9700156D0
- Authority
- SE
- Sweden
- Prior art keywords
- junction
- termination
- jte
- metal contact
- edge
- Prior art date
Links
- 239000002184 metal Substances 0.000 abstract 3
- 230000007704 transition Effects 0.000 abstract 3
- 230000005684 electric field Effects 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract 1
- 229910010271 silicon carbide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Amplifiers (AREA)
- Light Receiving Elements (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9700156A SE9700156D0 (sv) | 1997-01-21 | 1997-01-21 | Junction termination for Si C Schottky diode |
US08/821,159 US5914500A (en) | 1997-01-21 | 1997-03-20 | Junction termination for SiC Schottky diode |
DE69839511T DE69839511D1 (de) | 1997-01-21 | 1998-01-21 | Übergangsabschluss für sic schottkydiode |
PCT/SE1998/000082 WO1998032178A1 (en) | 1997-01-21 | 1998-01-21 | JUNCTION TERMINATION FOR SiC SCHOTTKY DIODE |
AT98901638T ATE396502T1 (de) | 1997-01-21 | 1998-01-21 | Übergangsabschluss für sic schottkydiode |
EP98901638A EP0965146B1 (de) | 1997-01-21 | 1998-01-21 | Übergangsabschluss für sic schottkydiode |
JP53423398A JP5067985B2 (ja) | 1997-01-21 | 1998-01-21 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9700156A SE9700156D0 (sv) | 1997-01-21 | 1997-01-21 | Junction termination for Si C Schottky diode |
Publications (1)
Publication Number | Publication Date |
---|---|
SE9700156D0 true SE9700156D0 (sv) | 1997-01-21 |
Family
ID=20405472
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE9700156A SE9700156D0 (sv) | 1997-01-21 | 1997-01-21 | Junction termination for Si C Schottky diode |
Country Status (7)
Country | Link |
---|---|
US (1) | US5914500A (de) |
EP (1) | EP0965146B1 (de) |
JP (1) | JP5067985B2 (de) |
AT (1) | ATE396502T1 (de) |
DE (1) | DE69839511D1 (de) |
SE (1) | SE9700156D0 (de) |
WO (1) | WO1998032178A1 (de) |
Families Citing this family (82)
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US6426540B1 (en) * | 1997-11-24 | 2002-07-30 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. | Optimized border of semiconductor components |
US6242784B1 (en) * | 1999-06-28 | 2001-06-05 | Intersil Corporation | Edge termination for silicon power devices |
US6373076B1 (en) | 1999-12-07 | 2002-04-16 | Philips Electronics North America Corporation | Passivated silicon carbide devices with low leakage current and method of fabricating |
FR2803103B1 (fr) * | 1999-12-24 | 2003-08-29 | St Microelectronics Sa | Diode schottky sur substrat de carbure de silicium |
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US6642558B1 (en) * | 2000-03-20 | 2003-11-04 | Koninklijke Philips Electronics N.V. | Method and apparatus of terminating a high voltage solid state device |
SE0001860D0 (sv) * | 2000-05-22 | 2000-05-22 | Abb Ab | A semiconductor device |
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US6573128B1 (en) | 2000-11-28 | 2003-06-03 | Cree, Inc. | Epitaxial edge termination for silicon carbide Schottky devices and methods of fabricating silicon carbide devices incorporating same |
US6462393B2 (en) | 2001-03-20 | 2002-10-08 | Fabtech, Inc. | Schottky device |
JP4942255B2 (ja) * | 2001-05-08 | 2012-05-30 | 三菱電機株式会社 | 炭化珪素半導体装置およびその製造方法 |
FR2832547A1 (fr) * | 2001-11-21 | 2003-05-23 | St Microelectronics Sa | Procede de realisation d'une diode schottky sur substrat de carbure de silicium |
US6734462B1 (en) | 2001-12-07 | 2004-05-11 | The United States Of America As Represented By The Secretary Of The Army | Silicon carbide power devices having increased voltage blocking capabilities |
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US20050259368A1 (en) * | 2003-11-12 | 2005-11-24 | Ted Letavic | Method and apparatus of terminating a high voltage solid state device |
US7407837B2 (en) * | 2004-01-27 | 2008-08-05 | Fuji Electric Holdings Co., Ltd. | Method of manufacturing silicon carbide semiconductor device |
US20060006394A1 (en) * | 2004-05-28 | 2006-01-12 | Caracal, Inc. | Silicon carbide Schottky diodes and fabrication method |
US7812441B2 (en) | 2004-10-21 | 2010-10-12 | Siliconix Technology C.V. | Schottky diode with improved surge capability |
US7394158B2 (en) * | 2004-10-21 | 2008-07-01 | Siliconix Technology C.V. | Solderable top metal for SiC device |
US7304363B1 (en) | 2004-11-26 | 2007-12-04 | United States Of America As Represented By The Secretary Of The Army | Interacting current spreader and junction extender to increase the voltage blocked in the off state of a high power semiconductor device |
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US9419092B2 (en) * | 2005-03-04 | 2016-08-16 | Vishay-Siliconix | Termination for SiC trench devices |
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US9640609B2 (en) * | 2008-02-26 | 2017-05-02 | Cree, Inc. | Double guard ring edge termination for silicon carbide devices |
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JP2011135094A (ja) * | 2011-02-25 | 2011-07-07 | Sumitomo Electric Ind Ltd | 半導体装置およびその製造方法 |
JP6050563B2 (ja) * | 2011-02-25 | 2016-12-21 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
US9318623B2 (en) | 2011-04-05 | 2016-04-19 | Cree, Inc. | Recessed termination structures and methods of fabricating electronic devices including recessed termination structures |
US9153443B2 (en) | 2011-04-05 | 2015-10-06 | Mitsubishi Electric Corporation | Semiconductor device and method of fabricating same |
US9673283B2 (en) | 2011-05-06 | 2017-06-06 | Cree, Inc. | Power module for supporting high current densities |
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US9349797B2 (en) | 2011-05-16 | 2016-05-24 | Cree, Inc. | SiC devices with high blocking voltage terminated by a negative bevel |
US9337268B2 (en) | 2011-05-16 | 2016-05-10 | Cree, Inc. | SiC devices with high blocking voltage terminated by a negative bevel |
US9373617B2 (en) | 2011-09-11 | 2016-06-21 | Cree, Inc. | High current, low switching loss SiC power module |
US8664665B2 (en) | 2011-09-11 | 2014-03-04 | Cree, Inc. | Schottky diode employing recesses for elements of junction barrier array |
US8618582B2 (en) | 2011-09-11 | 2013-12-31 | Cree, Inc. | Edge termination structure employing recesses for edge termination elements |
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JP6384944B2 (ja) | 2012-05-31 | 2018-09-05 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
CN105051902A (zh) * | 2013-03-27 | 2015-11-11 | 丰田自动车株式会社 | 纵型半导体装置 |
US9425265B2 (en) * | 2013-08-16 | 2016-08-23 | Cree, Inc. | Edge termination technique for high voltage power devices having a negative feature for an improved edge termination structure |
US9960247B2 (en) * | 2016-01-19 | 2018-05-01 | Ruigang Li | Schottky barrier structure for silicon carbide (SiC) power devices |
JP6756125B2 (ja) | 2016-03-16 | 2020-09-16 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
KR102392244B1 (ko) | 2016-12-15 | 2022-04-29 | 그리피스 유니버시티 | 실리콘 카바이드 쇼트키 다이오드 |
CN107482050B (zh) * | 2017-08-18 | 2020-02-07 | 珠海格力电器股份有限公司 | 一种功率器件的终端结构及其制造方法 |
US20220013626A1 (en) * | 2020-07-08 | 2022-01-13 | Nexgen Power Systems, Inc. | Method and system of junction termination extension in high voltage semiconductor devices |
WO2022009328A1 (ja) * | 2020-07-08 | 2022-01-13 | 三菱電機株式会社 | 半導体装置及び半導体装置の製造方法 |
CN112038416B (zh) * | 2020-09-15 | 2021-09-03 | 西安电子科技大学 | 基于p型NiO薄膜和斜面终端结构的肖特基二极管及其制作方法 |
RU206535U1 (ru) * | 2021-03-10 | 2021-09-15 | Акционерное общество "ГРУППА КРЕМНИЙ ЭЛ" | Тестовая ячейка для контроля качества изготовления диодов шоттки на карбиде кремния |
US11955567B2 (en) | 2022-02-16 | 2024-04-09 | Leap Semiconductor Corp. | Wide-band gap semiconductor device and method of manufacturing the same |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2460040A1 (fr) * | 1979-06-22 | 1981-01-16 | Thomson Csf | Procede pour realiser une diode schottky a tenue en tension amelioree |
IT1171402B (it) * | 1981-07-20 | 1987-06-10 | Selenia Ind Eletroniche Associ | Transistor ad effeto di campo a barriera metallo-semiconduttorre conzona svuotata modificata |
IT1214805B (it) * | 1984-08-21 | 1990-01-18 | Ates Componenti Elettron | Spositivi a semiconduttore con giunprocesso per la fabbricazione di dizioni planari a concentrazione di carica variabile e ad altissima tensione di breakdown |
US4648174A (en) * | 1985-02-05 | 1987-03-10 | General Electric Company | Method of making high breakdown voltage semiconductor device |
JPH0620125B2 (ja) * | 1989-03-28 | 1994-03-16 | サンケン電気株式会社 | 半導体装置 |
US4927772A (en) * | 1989-05-30 | 1990-05-22 | General Electric Company | Method of making high breakdown voltage semiconductor device |
JP3117506B2 (ja) * | 1991-09-13 | 2000-12-18 | 株式会社日立製作所 | 半導体整流素子 |
US5233215A (en) * | 1992-06-08 | 1993-08-03 | North Carolina State University At Raleigh | Silicon carbide power MOSFET with floating field ring and floating field plate |
JP2850694B2 (ja) * | 1993-03-10 | 1999-01-27 | 株式会社日立製作所 | 高耐圧プレーナ型半導体装置 |
US5399883A (en) * | 1994-05-04 | 1995-03-21 | North Carolina State University At Raleigh | High voltage silicon carbide MESFETs and methods of fabricating same |
TW286435B (de) * | 1994-07-27 | 1996-09-21 | Siemens Ag | |
JPH0883918A (ja) * | 1994-09-09 | 1996-03-26 | Sanken Electric Co Ltd | 半導体装置 |
JPH0897441A (ja) * | 1994-09-26 | 1996-04-12 | Fuji Electric Co Ltd | 炭化けい素ショットキーダイオードの製造方法 |
US5569937A (en) * | 1995-08-28 | 1996-10-29 | Motorola | High breakdown voltage silicon carbide transistor |
-
1997
- 1997-01-21 SE SE9700156A patent/SE9700156D0/xx unknown
- 1997-03-20 US US08/821,159 patent/US5914500A/en not_active Expired - Lifetime
-
1998
- 1998-01-21 WO PCT/SE1998/000082 patent/WO1998032178A1/en active Application Filing
- 1998-01-21 JP JP53423398A patent/JP5067985B2/ja not_active Expired - Lifetime
- 1998-01-21 DE DE69839511T patent/DE69839511D1/de not_active Expired - Lifetime
- 1998-01-21 EP EP98901638A patent/EP0965146B1/de not_active Expired - Lifetime
- 1998-01-21 AT AT98901638T patent/ATE396502T1/de not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP2001508950A (ja) | 2001-07-03 |
DE69839511D1 (de) | 2008-07-03 |
JP5067985B2 (ja) | 2012-11-07 |
ATE396502T1 (de) | 2008-06-15 |
WO1998032178A1 (en) | 1998-07-23 |
EP0965146B1 (de) | 2008-05-21 |
EP0965146A1 (de) | 1999-12-22 |
US5914500A (en) | 1999-06-22 |
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