SE432497B - Halvledaranordning med ett bipolert halvledarkopplingselement - Google Patents
Halvledaranordning med ett bipolert halvledarkopplingselementInfo
- Publication number
- SE432497B SE432497B SE7900337A SE7900337A SE432497B SE 432497 B SE432497 B SE 432497B SE 7900337 A SE7900337 A SE 7900337A SE 7900337 A SE7900337 A SE 7900337A SE 432497 B SE432497 B SE 432497B
- Authority
- SE
- Sweden
- Prior art keywords
- region
- area
- type
- junction
- zone
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 40
- 230000008878 coupling Effects 0.000 title claims description 4
- 238000010168 coupling process Methods 0.000 title claims description 4
- 238000005859 coupling reaction Methods 0.000 title claims description 4
- 230000015556 catabolic process Effects 0.000 claims description 30
- 230000002441 reversible effect Effects 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 14
- 239000004020 conductor Substances 0.000 claims description 13
- 230000007547 defect Effects 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 238000002955 isolation Methods 0.000 claims description 5
- 230000007812 deficiency Effects 0.000 claims description 3
- 230000007704 transition Effects 0.000 description 57
- 238000009826 distribution Methods 0.000 description 14
- 125000004429 atom Chemical group 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 230000002349 favourable effect Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/747—Bidirectional devices, e.g. triacs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
- H01L29/8083—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7800582A NL183859C (nl) | 1978-01-18 | 1978-01-18 | Halfgeleiderinrichting bevattende tenminste een halfgeleiderelement met drie opeenvolgende zones van afwisselend geleidingstype. |
| NLAANVRAGE7807835,A NL184552C (nl) | 1978-07-24 | 1978-07-24 | Halfgeleiderinrichting voor hoge spanningen. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| SE7900337L SE7900337L (sv) | 1979-07-19 |
| SE432497B true SE432497B (sv) | 1984-04-02 |
Family
ID=26645384
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE7900337A SE432497B (sv) | 1978-01-18 | 1979-01-15 | Halvledaranordning med ett bipolert halvledarkopplingselement |
Country Status (15)
| Country | Link |
|---|---|
| US (1) | US4292642A (no) |
| JP (1) | JPS54109780A (no) |
| AT (1) | AT380975B (no) |
| AU (1) | AU518446B2 (no) |
| BE (1) | BE873570A (no) |
| BR (1) | BR7900229A (no) |
| CA (1) | CA1131801A (no) |
| CH (1) | CH638928A5 (no) |
| DE (1) | DE2901193C2 (no) |
| ES (1) | ES476907A1 (no) |
| FR (1) | FR2415370A1 (no) |
| GB (1) | GB2013029B (no) |
| IT (1) | IT1110026B (no) |
| PL (1) | PL116562B1 (no) |
| SE (1) | SE432497B (no) |
Families Citing this family (54)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL184589C (nl) * | 1979-07-13 | 1989-09-01 | Philips Nv | Halfgeleiderinrichting voor het opwekken van een elektronenbundel en werkwijze voor het vervaardigen van een dergelijke halfgeleiderinrichting. |
| NL186665C (nl) * | 1980-03-10 | 1992-01-16 | Philips Nv | Halfgeleiderinrichting. |
| DE3017313A1 (de) * | 1980-05-06 | 1981-11-12 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit hoher blockierspannung und verfahren zu seiner herstellung |
| US4300150A (en) * | 1980-06-16 | 1981-11-10 | North American Philips Corporation | Lateral double-diffused MOS transistor device |
| DE3029553A1 (de) * | 1980-08-04 | 1982-03-11 | Siemens AG, 1000 Berlin und 8000 München | Transistoranordnung mit hoher kollektor-emitter-durchbruchsspannung |
| NL187415C (nl) * | 1980-09-08 | 1991-09-16 | Philips Nv | Halfgeleiderinrichting met gereduceerde oppervlakteveldsterkte. |
| JPS5753977A (ja) * | 1980-09-17 | 1982-03-31 | Matsushita Electronics Corp | Toranjisuta |
| GB2090053B (en) * | 1980-12-19 | 1984-09-19 | Philips Electronic Associated | Mesfet |
| US4783688A (en) * | 1981-12-02 | 1988-11-08 | U.S. Philips Corporation | Schottky barrier field effect transistors |
| US4485392A (en) * | 1981-12-28 | 1984-11-27 | North American Philips Corporation | Lateral junction field effect transistor device |
| US4942440A (en) * | 1982-10-25 | 1990-07-17 | General Electric Company | High voltage semiconductor devices with reduced on-resistance |
| US4626879A (en) * | 1982-12-21 | 1986-12-02 | North American Philips Corporation | Lateral double-diffused MOS transistor devices suitable for source-follower applications |
| FR2543739B1 (fr) * | 1983-03-30 | 1986-04-18 | Radiotechnique Compelec | Procede de realisation d'un transistor bipolaire haute tension |
| GB2148589B (en) * | 1983-10-18 | 1987-04-23 | Standard Telephones Cables Ltd | Improvements in intergrated circuits |
| US4862242A (en) * | 1983-12-05 | 1989-08-29 | General Electric Company | Semiconductor wafer with an electrically-isolated semiconductor device |
| US4639761A (en) * | 1983-12-16 | 1987-01-27 | North American Philips Corporation | Combined bipolar-field effect transistor resurf devices |
| US4622568A (en) * | 1984-05-09 | 1986-11-11 | Eaton Corporation | Planar field-shaped bidirectional power FET |
| JPS61154063A (ja) * | 1984-12-26 | 1986-07-12 | Toshiba Corp | 光半導体装置およびその製造方法 |
| US4890150A (en) * | 1985-12-05 | 1989-12-26 | North American Philips Corporation | Dielectric passivation |
| JPS63253664A (ja) * | 1987-04-10 | 1988-10-20 | Sony Corp | バイポ−ラトランジスタ |
| US4890146A (en) * | 1987-12-16 | 1989-12-26 | Siliconix Incorporated | High voltage level shift semiconductor device |
| DE3832732A1 (de) * | 1988-09-27 | 1990-03-29 | Asea Brown Boveri | Leistungshalbleiterdiode |
| DE3832731A1 (de) * | 1988-09-27 | 1990-03-29 | Asea Brown Boveri | Leistungshalbleiterdiode |
| DE3832709A1 (de) * | 1988-09-27 | 1990-03-29 | Asea Brown Boveri | Thyristor |
| US5155568A (en) * | 1989-04-14 | 1992-10-13 | Hewlett-Packard Company | High-voltage semiconductor device |
| JPH03235367A (ja) * | 1990-02-13 | 1991-10-21 | Mitsubishi Electric Corp | 半導体集積回路装置 |
| US5386136A (en) * | 1991-05-06 | 1995-01-31 | Siliconix Incorporated | Lightly-doped drain MOSFET with improved breakdown characteristics |
| US5374843A (en) * | 1991-05-06 | 1994-12-20 | Silinconix, Inc. | Lightly-doped drain MOSFET with improved breakdown characteristics |
| SE500814C2 (sv) * | 1993-01-25 | 1994-09-12 | Ericsson Telefon Ab L M | Halvledaranordning i ett tunt aktivt skikt med hög genombrottsspänning |
| US6242787B1 (en) | 1995-11-15 | 2001-06-05 | Denso Corporation | Semiconductor device and manufacturing method thereof |
| US6831331B2 (en) | 1995-11-15 | 2004-12-14 | Denso Corporation | Power MOS transistor for absorbing surge current |
| JP3547884B2 (ja) | 1995-12-30 | 2004-07-28 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
| JP3917211B2 (ja) | 1996-04-15 | 2007-05-23 | 三菱電機株式会社 | 半導体装置 |
| JP3562611B2 (ja) * | 1996-11-05 | 2004-09-08 | ソニー株式会社 | 半導体装置及びその製造方法 |
| SE512661C2 (sv) * | 1996-11-13 | 2000-04-17 | Ericsson Telefon Ab L M | Lateral bipolär hybridtransistor med fälteffektmod och förfarande vid densamma |
| US6011297A (en) * | 1997-07-18 | 2000-01-04 | Advanced Micro Devices,Inc. | Use of multiple slots surrounding base region of a bipolar junction transistor to increase cumulative breakdown voltage |
| US5859469A (en) * | 1997-07-18 | 1999-01-12 | Advanced Micro Devices, Inc. | Use of tungsten filled slots as ground plane in integrated circuit structure |
| US5912501A (en) * | 1997-07-18 | 1999-06-15 | Advanced Micro Devices, Inc. | Elimination of radius of curvature effects of p-n junction avalanche breakdown using slots |
| JP3768656B2 (ja) | 1997-09-18 | 2006-04-19 | 三菱電機株式会社 | 半導体装置 |
| DE10036007B4 (de) * | 2000-07-25 | 2015-03-26 | Robert Bosch Gmbh | Anordnung mit einem Magnetotransistor, Verfahren zum Herstellen einer Anordnung mit einem Magnetotransistor und Verfahren zum Messen eines Magnetfeldes |
| JP3846796B2 (ja) * | 2002-11-28 | 2006-11-15 | 三菱電機株式会社 | 半導体装置 |
| JP4094984B2 (ja) * | 2003-04-24 | 2008-06-04 | 三菱電機株式会社 | 半導体装置 |
| JP4326835B2 (ja) * | 2003-05-20 | 2009-09-09 | 三菱電機株式会社 | 半導体装置、半導体装置の製造方法及び半導体装置の製造プロセス評価方法 |
| JP4731816B2 (ja) * | 2004-01-26 | 2011-07-27 | 三菱電機株式会社 | 半導体装置 |
| JP4593126B2 (ja) * | 2004-02-18 | 2010-12-08 | 三菱電機株式会社 | 半導体装置 |
| JP4667756B2 (ja) * | 2004-03-03 | 2011-04-13 | 三菱電機株式会社 | 半導体装置 |
| JP4620437B2 (ja) * | 2004-12-02 | 2011-01-26 | 三菱電機株式会社 | 半導体装置 |
| US7714352B2 (en) * | 2006-02-09 | 2010-05-11 | Nissan Motor Co., Ltd. | Hetero junction semiconductor device |
| JP4751308B2 (ja) * | 2006-12-18 | 2011-08-17 | 住友電気工業株式会社 | 横型接合型電界効果トランジスタ |
| JP5191132B2 (ja) | 2007-01-29 | 2013-04-24 | 三菱電機株式会社 | 半導体装置 |
| US9087713B2 (en) * | 2012-10-12 | 2015-07-21 | Power Integrations, Inc. | Semiconductor device with shared region |
| JP6207985B2 (ja) | 2013-11-21 | 2017-10-04 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| JP6590076B2 (ja) | 2016-09-13 | 2019-10-16 | 三菱電機株式会社 | 半導体装置 |
| JP7407590B2 (ja) | 2019-12-25 | 2024-01-04 | 三菱電機株式会社 | 半導体装置および集積回路 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3442723A (en) * | 1964-12-30 | 1969-05-06 | Sony Corp | Method of making a semiconductor junction by diffusion |
| NL161621C (nl) * | 1968-10-16 | 1980-02-15 | Philips Nv | Halfgeleiderinrichting met veldeffecttransistor. |
| JPS4932028B1 (no) * | 1969-06-24 | 1974-08-27 | ||
| JPS5012665B1 (no) * | 1970-05-19 | 1975-05-13 | ||
| GB1471617A (en) * | 1973-06-21 | 1977-04-27 | Sony Corp | Circuits comprising a semiconductor device |
| JPS50147673A (no) * | 1974-05-17 | 1975-11-26 | ||
| JPS5140881A (ja) * | 1974-10-04 | 1976-04-06 | Hitachi Ltd | Handotaisochi |
| US4017882A (en) * | 1975-12-15 | 1977-04-12 | Rca Corporation | Transistor having integrated protection |
| US4132996A (en) * | 1976-11-08 | 1979-01-02 | General Electric Company | Electric field-controlled semiconductor device |
| NL184551C (nl) * | 1978-07-24 | 1989-08-16 | Philips Nv | Veldeffekttransistor met geisoleerde stuurelektrode. |
-
1979
- 1979-01-11 CA CA319,526A patent/CA1131801A/en not_active Expired
- 1979-01-13 DE DE2901193A patent/DE2901193C2/de not_active Expired
- 1979-01-15 BR BR7900229A patent/BR7900229A/pt unknown
- 1979-01-15 GB GB791412A patent/GB2013029B/en not_active Expired
- 1979-01-15 SE SE7900337A patent/SE432497B/sv not_active IP Right Cessation
- 1979-01-15 IT IT19305/79A patent/IT1110026B/it active
- 1979-01-16 US US06/004,004 patent/US4292642A/en not_active Expired - Lifetime
- 1979-01-16 CH CH41779A patent/CH638928A5/de not_active IP Right Cessation
- 1979-01-16 AU AU43405/79A patent/AU518446B2/en not_active Ceased
- 1979-01-16 PL PL1979212822A patent/PL116562B1/pl unknown
- 1979-01-16 ES ES476907A patent/ES476907A1/es not_active Expired
- 1979-01-16 AT AT0031179A patent/AT380975B/de not_active IP Right Cessation
- 1979-01-17 FR FR7901086A patent/FR2415370A1/fr active Granted
- 1979-01-18 JP JP346579A patent/JPS54109780A/ja active Pending
- 1979-01-18 BE BE0/192972A patent/BE873570A/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| BE873570A (fr) | 1979-07-18 |
| BR7900229A (pt) | 1979-08-14 |
| GB2013029B (en) | 1982-05-19 |
| ES476907A1 (es) | 1979-05-16 |
| IT1110026B (it) | 1985-12-23 |
| CA1131801A (en) | 1982-09-14 |
| IT7919305A0 (it) | 1979-01-15 |
| ATA31179A (de) | 1985-12-15 |
| DE2901193A1 (de) | 1979-07-19 |
| PL212822A1 (pl) | 1979-09-10 |
| JPS54109780A (en) | 1979-08-28 |
| AU4340579A (en) | 1979-07-26 |
| AT380975B (de) | 1986-08-11 |
| GB2013029A (en) | 1979-08-01 |
| AU518446B2 (en) | 1981-10-01 |
| DE2901193C2 (de) | 1982-09-30 |
| SE7900337L (sv) | 1979-07-19 |
| FR2415370B1 (no) | 1984-06-08 |
| US4292642A (en) | 1981-09-29 |
| PL116562B1 (en) | 1981-06-30 |
| FR2415370A1 (fr) | 1979-08-17 |
| CH638928A5 (de) | 1983-10-14 |
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