RU93046416A - Полупроводниковое запоминающее устройство - Google Patents

Полупроводниковое запоминающее устройство

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Publication number
RU93046416A
RU93046416A RU93046416/09A RU93046416A RU93046416A RU 93046416 A RU93046416 A RU 93046416A RU 93046416/09 A RU93046416/09 A RU 93046416/09A RU 93046416 A RU93046416 A RU 93046416A RU 93046416 A RU93046416 A RU 93046416A
Authority
RU
Russia
Prior art keywords
memory
regions
memory sub
semiconductor memory
memory device
Prior art date
Application number
RU93046416/09A
Other languages
English (en)
Other versions
RU2134916C1 (ru
Inventor
Чо Сун-хи
Ли Хьонг-гон
Original Assignee
Самсунг Электроникс Ко. Лтд.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1019920013685A external-priority patent/KR950008789B1/ko
Application filed by Самсунг Электроникс Ко. Лтд. filed Critical Самсунг Электроникс Ко. Лтд.
Publication of RU93046416A publication Critical patent/RU93046416A/ru
Application granted granted Critical
Publication of RU2134916C1 publication Critical patent/RU2134916C1/ru

Links

Claims (1)

  1. Полупроводниковое запоминающее устройство, состоящее из области памяти разделенной на множество подобластей памяти, каждая из которых имеет как обычные ячейки памяти, так и ячейки для хранения битов четности, совокупности n групп усилителей считывания, каждая из которых соединена с соответствующей подобластью памяти, совокупности схем обнаружения и корректировки ошибок, каждая из которых соединена с соответствующей группой усилителей считывания и служит для исправления синдромных битов в составе данных памяти, выходных дешифраторов, каждый из которых соединен с выходом соответствующей схемы обнаружения и корректировки ошибок. Причем, когда полупроводниковое запоминающее устройство функционирует в нормальном режиме, активизируется только одна из подобластей памяти, а когда устройство функционирует в постраничном режиме, активизируются сразу все подобласти памяти.
RU93046416A 1992-07-30 1993-07-29 Полупроводниковое запоминающее устройство RU2134916C1 (ru)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR13685/1992 1992-07-30
KR1019920013685A KR950008789B1 (ko) 1992-07-30 1992-07-30 멀티-이씨씨(ecc)회로를 내장하는 반도체 메모리 장치

Publications (2)

Publication Number Publication Date
RU93046416A true RU93046416A (ru) 1996-12-10
RU2134916C1 RU2134916C1 (ru) 1999-08-20

Family

ID=19337249

Family Applications (1)

Application Number Title Priority Date Filing Date
RU93046416A RU2134916C1 (ru) 1992-07-30 1993-07-29 Полупроводниковое запоминающее устройство

Country Status (8)

Country Link
US (1) US5469450A (ru)
EP (1) EP0581602B1 (ru)
JP (1) JP3982641B2 (ru)
KR (1) KR950008789B1 (ru)
CN (1) CN1033607C (ru)
DE (1) DE69326511T2 (ru)
RU (1) RU2134916C1 (ru)
TW (1) TW234763B (ru)

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